Logic Devices Research Articles

Giant Spin-Orbit Torque in Antiferromagnetic-Coupled Pt/[Co/Gd]N Multilayers with Suppressed Spin Dephasing and Robust Thermal Stability.

Manipulating magnetization via power-efficient spin-orbit torque (SOT) has garnered significant attention in the field of spin-based memory and logic devices. However, the damping-like SOT efficiency (ξDL) in heavy metal (HM)/ferromagnetic metal (FM) bilayers is relatively small due to the strong spin dephasing accompanied by additional spin polarization decay. Furthermore, the perpendicular magnetic anisotropy (PMA) originating from the HM/FM interface is constrained by the thickness of FM, which is unfavorable for thermal stability in practical applications. Consequently, it is valuable to develop systems that not only exhibit large ξDL but also balance thermal stability. In this work, we designed antiferromagnetic-coupled [Co/Gd]N multilayers, where staggered Co and Gd magnetic moments effectively suppress the spin dephasing and additional spin polarization decay. The ordered Co-Gd arrangements along the out-of-plane direction provide bulk PMA, endowing Pt/[Co/Gd]N high thermal stability. The SOT of Pt/[Co/Gd]N was systematically studied with N, demonstrating a significantly large ξDL of up to 0.66. The ξDL of Pt/[Co/Gd]N is greater than those of Pt/Co and Pt/ferrimagnetic alloys. This significant enhancement relies on the effective suppression of spin dephasing in [Co/Gd]N. Our work highlights that the antiferromagnetic-coupled [Co/Gd]N multilayer is a promising candidate for low-consumption and high-density spintronic devices.

Platelet Rich Fibrin Membrane as Nerve Guidance Conduit for Reconstruction Case with Nerve Repair Based Morphometric and Electrophysiologic Parameters: A Systematic Review and Meta-Analysis

Introduction: Motor or sensory nerve injury is a major surgical and clinical challenge, often with disappointing results and impairing sensory and motor function. Now there are some studies to looking for ways to accelerate nerve regeneration. Platelet-rich fibrin (PRF) is made from an autologous platelet concentrate that contains progenitor cells that are essential for the healing process, along with neurotrophic factors and several growth factors. Additionally, PRF can be manufactured in the membrane form that can be wrapped around nerves in the form of tubes which tubulation has many advantages such as guiding growth within the tubular shape to improve regenerative capacity. Methods: This systematic review and meta-analysis was conducted as per the Preferred Reporting Items for Systematic Review and Meta-Analysis (PRISMA) guidelines. A systematic, detailed search was carried out by the authors in the electronic databases, including PubMed, Cochrane, Research Gate, Elsevier, and PRS Journal. Studies were selected and compared based on outcome measures like Morphometric (Axon Area and Myelin Sheath Thickness) and Electrophysiologic (Amplitude and Nerve Conduction Velocity). Statistical analysis was performed using a random- effect model, pooled standard mean difference and I2 heterogeneity. Result: Four randomized studies with analyzed 4 parameters, those are Morphometric (Axon Area and Myelin Sheath Thickness) and Electrophysiologic (Amplitude and Nerve Conduction Velocity). Pooled analysis for the outcome like Myelin Sheath Thickness, Axon Area, and Amplitude showed a significant result in groups with PRF. Pooled analysis for outcome of Nerve Conduction Velocity showed no significant difference between the groups with PRF and without PRF (SMD: 0.01; 95% CI: -0.64. 0.65) with P = 0.99. Conclusion: This Meta-analysis shows that PRF membrane as nerve guidance conduit is promising method and can improve function outcome in nerve repair specially in Morphometric and Electrophysiologic parameters but outcome of Nerve Conduction Velocity showed no significant in this study.

Field-free magnetization switching through large out-of-plane spin–orbit torque in the ferromagnetic CoPt single layers

Spin–orbit torque (SOT) induced magnetization switching in an energy-efficient and fast way has exhibited great application potential in next generation magnetic memories. However, a complicated layer structure is usually needed to break the mirror symmetry for achieving SOT induced field-free magnetization switching. Here, we report a sizeable field-free magnetization switching through large out-of-plane SOT in the chemically disordered A1-CoxPt100−x single layers within a Co composition range from 40 to 70. The largest absolute out-of-plane SOT efficiency is found at its equiatomic concentration (Co50Pt50), in which the absolute in-plane SOT efficiency also reaches the maximum value, 22.7 Oe/107 A cm−2. We further demonstrate that the symmetry dependence of field-free magnetization switching might arise from the chemically ordered L11-CoPt nano-scaled platelets formed during the sample deposition. We expect that the experimental identification of the field-free magnetization switching in the ferromagnetic CoPt single layer is desirable to simplify the applications of spin logic devices.

Dynamic Manipulation of Chiral Domain Wall Spacing for Advanced Spintronic Memory and Logic Devices.

Nanoscopic magnetic domain walls (DWs), via their absence or presence, enable highly interesting binary data bits. The current-controlled, high-speed, synchronous motion of sequences of chiral DWs in magnetic nanoconduits induced by current pulses makes possible high-performance spintronic memory and logic devices. The closer the spacing between neighboring DWs in an individual conduit or nanowire, the higher the data density of the device, but at the same time, the more difficult it is to read the bits. Here, we show how the DW spacing can be dynamically varied to facilitate reading for otherwise closely packed bits. In the first method, the current density is increased in portions of the conduit that, thereby, locally speeds up the DWs, decompressing them and making them easier to read. In the second method, a localized bias current is used to compress and decompress the DW spacing. Both of these methods are demonstrated experimentally and validated by micromagnetic simulations. DW compression and decompression rates as high as 88% are shown. These methods can increase the density with which DWs can be packed in future DW-based spintronic devices by more than an order of magnitude.

A grid-connected eleven-level power conversion interface

ABSTRACT This paper proposes a grid-connected eleven-level power conversion interface (GCELPCI) for renewable power systems. The proposed GCELPCI is composed of a four-port DC-DC power converter (FPDDPC) and an eleven-level inverter (ELI). The FPDDPC combines a boost power converter and a transformer with a turn ratio of 2:1 to generate multiple combinations of the output voltages for the DC bus voltage of the ELI. The ELI integrates an asymmetric voltage technique on a T-type inverter to further convert the DC output voltages of FPDDPC into eleven-level AC voltage. A sinusoidal current is generated by the proposed GCELPCI through the filter inductor and injected into the power grid. Only nine power electronic switches are used in the ELI to generate an eleven-level AC voltage, the number of power electronic switches is reduced to simplify the power circuit. In addition, the capacity of the filter inductor is reduced. A digital signal processor (DSP) and a complex programmable logic device (CPLD) chip are used as the digital controller to complete a hardware prototype to verify the performance of the proposed GCELI.

Fully Reprogrammable 2D Array of Multistate Molecular Switching Units.

Integration of molecular switching units into complex electronic circuits is considered to be the next step toward the realization of novel logic and memory devices. This paper reports on an ordered 2D network of neighboring ternary switching units represented by triazatruxene (TAT) molecules organized in a honeycomb lattice on a Ag(111) surface. Using low-temperature scanning tunneling microscopy, the bonding configurations of individual TAT molecules can be controlled, realizing up to 12 distinct states per molecule. The switching between those states shows a strong bias dependence ranging from tens of millivolts to volts. The low-bias switching behavior is explored in active units consisting of two and more interacting TAT molecules that are purposefully defined (programmed) by high-bias switching within the honeycomb lattice. Within such a unit the low-bias switching can be triggered and accessed by single-point measurements on a single TAT molecule, demonstrating up to 9 and 19 distinguishable states in a dyad and a tetrad of coupled molecules, respectively. High experimental control over the desired state, owing to bias-dependent hierarchical switching and pronounced switching directionality, as well as full reversibility, make this system particularly appealing, paving the way to design complex molecule-based memory systems.

Transport of skyrmions by surface acoustic waves

Magnetic skyrmions in thin films with perpendicular magnetic anisotropy are promising candidates for magnetic memory and logic devices, making the development of ways to transport skyrmions efficiently in a desired trajectory of significant interest. Here, we investigate the transport of skyrmions by surface acoustic waves (SAWs) via several modalities using micromagnetic simulations. We show skyrmion pinning sites created by standing SAWs at anti-nodes and skyrmion Hall-like motion without pinning driven by traveling SAWs. We also show how orthogonal SAWs formed by combining a longitudinal traveling SAW and a transverse standing SAW can be used for the 2D positioning of skyrmions. Our results also suggest SAWs offer a viable approach to the transport of multiple skyrmions along a multichannel racetrack.

Self‐Healing Magnetic Field‐Assisted Threshold Switching Device Utilizing Dual Field‐Driven Filamentary Physics

AbstractAdvanced filamentary devices are crucial for developing low‐power devices to implement high‐speed logic and neuromorphic devices. Among these, HfO2‐based filamentary devices have attracted attention as viable options due to their threshold‐switching characteristics and compatibility with complementary metal‐oxide‐semiconductor (CMOS) technology. However, the unpredictability of conventional filament formation/rupture driven by an electric field challenges consistency and reliability. A paradigm shift from conventional stochastic electric field‐driven ion migration to controllable ion‐based transportation is essential to devise functional low‐power devices capable of controlling the filament process. This work introduces a magnetic field‐assisted threshold switching (MA‐TS) device, which integrates a neodymium magnet and a nickel (Ni) barrier layer to enable controlled dual field‐driven ion transportation. The dual field‐driven process combining the conventional vertical electric field‐driven ion migration with lateral magnetic field‐driven ion transportation, reveals a distinctive aspect of ion movement. The MA‐TS device achieves superior performances characterized by an ultra‐low threshold voltage (≈0 V), minimized leakage current in the off‐state, a variation‐immune hysteresis‐free characteristic, enhanced yield, and revival‐ability (i.e., self‐healing) after a failed TS operation. By overcoming the limitations of conventional filamentary devices, the MA‐TS device opens up a promising avenue for efficient and stable low‐power applications.

Electronic Delocalization Engineering of β‐AsP Enabled High‐Efficient Multisource Logic Nanodevices

AbstractDelocalized electron and phonon structures are directives for rationally tuning the intrinsic physicochemical properties of 2D materials by redistributing electronic density. However, it is still challenging to accurately manipulate the delocalized electron and systematically study the relationships between physiochemical properties and practical nanodevices. Herein, the effects of delocalized electrons engineering on blue‐arsenic‐phosphorus (β‐AsP)‐based practical devices are systematically investigated via implementing vacancies or heteroatom doping. A tendency of carrier conductivity property from “half‐metal” to “metal” is initially found when tuning the electronic structure of β‐AsP with adjustable vacancy concentrations below 2 at% or above 3 at%, which can be ascribed to the introduction of delocalized electrons that cause asymmetric contributions to the electronic states near the implementation site. In optical logic device simulations, broadband response, triangular wave circuit system signal, and reverse polarization anisotropy are achieved by adjusting the vacancy concentration, while extinction ratios are as high as 1561. The electric and thermic‐logic devices realize the highest available reported giant magnetoresistance (MR) up to 1013% and 1039% at vacancy concentrations of 1.67% and 0.89%, respectively, which is significantly superior to the reports. The results shed light on the electronic delocalization strategy of regulating internal structures to achieve highly efficient nanodevices.

Photocurrent Ambipolar Behavior in Phase Junction of a Ga2O3 Porous Nanostructure for Solar-Blind Light Control Logic Devices.

Photoelectrochemical (PEC) devices are the most similar artificial devices to the nervous system, which is expected to solve the problem of complex computer/nervous system interface (solid-liquid interface) and multifunctional integration (photoelectric fusion) required in the post-Moore era. Based on the different photocurrent ambipolar behavior and different deep ultraviolet solar-blind spectral photoresponse characteristics of α-Ga2O3 and β-Ga2O3, we designed and constructed the Ga2O3 porous nanostructure PEC device with an adjustable photocurrent bipolar behavior through constructing an α/β phase junction core-shell structure by adjusting the thickness and the surface state of the shell layer. The switching point of the α/β-Ga2O3 ambipolar photocurrent shifts toward negative values with the increase of β-Ga2O3 shell layer thicknesses, and adjustable Boolean logic gates are prepared using the voltage as the input source with a high accuracy manipulated by solar-blind deep ultraviolet light. The controllable solar-blind logic gates based on the ambipolar photocurrent behavior of α/β-Ga2O3 presented in this study offer a new path for the photoelectric device multifunctional integration needed in the post-Moore era, which can be used in the creation of Ga2O3 half adders and full adders, as well as in the construction of four-input OR gates.

Manipulating Spin‐Lattice Coupling in Layered Magnetic Topological Insulator Heterostructure via Interface Engineering

AbstractInduced magnetic order in a topological insulator (TI) can be realized either by depositing magnetic adatoms on the surface of a TI or engineering the interface with epitaxial thin film or stacked assembly of 2D van der Waals (vdW) materials. Herein, the observation of spin‐phonon coupling in the otherwise non‐magnetic TI Bi2Te3 is reported, due to the proximity of FePS3 (an antiferromagnet (AFM), TN ≈ 120 K), in a vdW heterostructure framework. Temperature‐dependent Raman spectroscopic studies reveal deviation from the usual phonon anharmonicity originated from spin‐lattice coupling at the Bi2Te3/FePS3 interface at/below 60 K in the peak position (self‐energy) and linewidth (lifetime) of the characteristic phonon modes of Bi2Te3 (106 and 138 cm−1) in the stacked heterostructure. The Ginzburg‐Landau (GL) formalism, where the respective phonon frequencies of Bi2Te3 couple to phonons of similar frequencies of FePS3 in the AFM phase, is adopted to understand the origin of the hybrid magneto‐elastic modes. At the same time, the reduction of characteristic TN of FePS3 from 120 K in isolated flakes to 65 K in the heterostructure, possibly due to the interfacial strain, which leads to smaller Fe‐S‐Fe bond angles as corroborated by computational studies using density functional theory (DFT). Besides, inserting hexagonal boron nitride within Bi2Te3/FePS3 stacking regains the anharmonicity in Bi2Te3. Controlling interfacial spin‐phonon coupling in stacked heterostructure can have potential application in surface code spin logic devices.

Attaining quantitatively fewer defects in close-packed InGaZnO synthesized using atomic layer deposition

Owing to their uniformity across large areas, low-temperature processability, and low off-current characteristics, oxide semiconductors demonstrate significant potential for integration into displays, memories, and logic devices. In the hyper scaling era, atomic layer deposition (ALD) is well suited for downsizing device fabrication, leveraging self-limiting chemical reactions to provide nanoscale control, and conformal coating on substrates with high aspect ratios. Hence, in this study, we fabricated highly oriented c-axis-aligned crystalline (CAAC) indium-gallium-zinc oxide (IGZO) thin films using plasma-enhanced ALD (PEALD), introducing an additional thermodynamic driving force for crystallization. A comparative study was conducted on the properties of CAAC-IGZO in correspondence to conventional sputter-based IGZO. In particular, photo-induced current transient spectroscopy (PICTS) is employed to map the electronic structure (density of states (DOS)) of the films, which quantitatively confirmed fewer defects in CAAC-IGZO. Fewer defects result in highly stable CAAC-IGZO transistors with positive bias stress threshold (PBTS) at 0.03 V and negative bias stress threshold (NBTS) at - 0.06 V. Thus, this research on thermally and electrically stable CAAC-IGZO synthesized at low temperatures through PEALD offers insights into the processing and material perspectives for the application of oxide semiconductors in 3D integration.

Eight In. Wafer-Scale Epitaxial Monolayer MoS2.

Large-scale, high-quality, and uniform monolayer molybdenum disulfide(MoS2) films are crucial for their applications in next-generation electronics and optoelectronics. Epitaxy is a mainstream technique for achieving high-quality MoS2 films and is demonstrated at a wafer scale up to 4-in. In this study, the epitaxial growth of 8-in. wafer-scale highly oriented monolayer MoS2 on sapphire is reported as with excellent spatial homogeneity, using a specially designed vertical chemical vapor deposition (VCVD) system. Field effect transistors (FETs) based on the as-grown 8-in. wafer-scale monolayer MoS2 film are fabricated and exhibit high performances, with an average mobility and an on/off ratio of 53.5 cm2 V-1 s-1 and 107, respectively. In addition, batch fabrication of logic devices and 11-stage ring oscillators are also demonstrated, showcasing excellent electrical functions. This work may pave the way of MoS2 in practical industry-scale applications.

A logic device based on memristor-diode crossbar and CMOS periphery as spike router for hardware neural network

A programmable logic device based on a memristor-diode crossbar and CMOS logic has been developed. The crossbar implements NAND logic gates using memristor ratioed logic and CMOS inverters. The digitally controlled peripheral circuit provides digital signals transmission and allows modification and evaluation memristor states in the crossbar. The proposed logic device circuit requires fewer transistors than known analogues and less area on the chip.The maximum size of the crossbar in a logic device is estimated by numerical simulation at the level of electrical circuits. The limited size is caused by the degradation of the logic levels voltages in the memristor-diode crossbar. The operability of peripheral circuits as part of a complete electrical circuit of a logic device is demonstrated during the simulation of the execution of logical operations, the processes of modification and evaluation states of individual memristors.

Room-Temperature Antisymmetric Magnetoresistance in Van Der Waals Ferromagnet Fe3GaTe2 Nanosheets.

Van der Waals (vdW) ferromagnetic materials have emerged as a promising platform for the development of 2D spintronic devices. However, studies to date are restricted to vdW ferromagnetic materials with low Curie temperature (Tc) and small magnetic anisotropy. Here, a chemical vapor transport method is developed to synthesize a high-quality room-temperature ferromagnet, Fe3GaTe2 (c-Fe3GaTe2), which boasts a high Tc = 356 K and large perpendicular magnetic anisotropy. Due to the planar symmetry breaking, an unconventional room-temperature antisymmetric magnetoresistance (MR) is first observed in c-Fe3GaTe2 devices with step features, manifesting as three distinctive states of high, intermediate, and low resistance with the sweeping magnetic field. Moreover, the modulation of the antisymmetric MR is demonstrated by controlling the height of the surface steps. This work provides new routes to achieve magnetic random storage and logic devices by utilizing the room-temperature thickness-controlled antisymmetric MR and further design room-temperature 2D spintronic devices based on the vdW ferromagnet c-Fe3GaTe2.

A liquid metal-based module emulating the intelligent preying logic of flytrap

Plant species like the Venus flytrap possess unique abilities to intelligently respond to various external stimuli, ensuring successful prey capture. Their nerve-devoided structure provides valuable insights for exploring natural intelligence and constructing intelligent systems solely from materials, but limited knowledge is currently available and the engineering realization of such concept remains a significant challenge. Drawing upon the flytrap’s action potential resulting from ion diffusion, we propose a signal accumulation/attenuation model and a corresponding liquid metal-based logic module, which operates on the basis of the shape change of liquid metal within a sodium hydroxide buffer solution. The module itself exhibits memory and counting properties without involving any other electronic components, intelligently responding to various stimulus sequences, and reproducing the flytrap’s most logical function. We also demonstrate and forecast its potential as a moving window integration-based high-pass filter, artificial synapse in neural networks, and other related applications. This research provides a fresh perspective on comprehending the intelligence inherent in nature and its realization through physical structures, which is expected to inspire logic device development in a broad engineering field.

Fast current-induced skyrmion motion in synthetic antiferromagnets.

Magnetic skyrmions are topological magnetic textures that hold great promise as nanoscale bits of information in memory and logic devices. Although room-temperature ferromagnetic skyrmions and their current-induced manipulation have been demonstrated, their velocity has been limited to about 100 meters per second. In addition, their dynamics are perturbed by the skyrmion Hall effect, a motion transverse to the current direction caused by the skyrmion topological charge. Here, we show that skyrmions in compensated synthetic antiferromagnets can be moved by current along the current direction at velocities of up to 900 meters per second. This can be explained by the cancellation of the net topological charge leading to a vanishing skyrmion Hall effect. Our results open an important path toward the realization of logic and memory devices based on the fast manipulation of skyrmions in tracks.

Graphene-based spintronics

Graphene, the first isolated two-dimensional atomic crystal, is about to pass its 20th year. The last decade has been a critical period for graphene to gradually move from the laboratory to practical applications, and the research on the spin-related physical properties and various spintronic applications of graphene is still enduring. In this review, we systematically retrospect the important and state-of-art progresses about graphene-based spintronics. First, spin–orbit coupling and various tuning means in graphene have been introduced, such as adatoms, electrical control, and the proximity effect. Second, several methods for inducing magnetism in graphene are summarized, including defect, atom doping, proximity effect, and the recently attractive twisted magic-angle. Third, graphene-based lateral and vertical spin valves are discussed, along with some emergent spin transport properties, including spin injection, scattering, and relaxation. Fourth, graphene-based spin logic circuits for spin communications and multifunctional spin logic devices are exhibited. Finally, some significant opportunities and challenges of graphene-based spintronics for the fundamental physics and practical applications in the future are briefly discussed.

Transfer-free robust n-type graphene field-effect transistors for digital logic electronic devices

Graphene has been hailed as wonder materials for electronics due to its outstanding charge transport properties. However, its lack of an electronic bandgap has hindered its application to large-scale field-effect transistor (FET) circuits, thereby making bandgap opening a key priority. Further, the fabrication of graphene devices to date conventionally requires the transfer of graphene from its growth substrate to a target substrate, which introduces defects and deteriorates the device performance. To overcome these challenges, we demonstrate a transfer-free approach for the low-temperature growth (∼100 °C) onto TiO2–x (∼10 nm) buffer layer and in-situ nitrogen doping of monolayer graphene, which enables stretchable nitrogen-doped graphene-based FETs with cutting-edge performance and stability. Hybridizing a TiO2–x channel with the nitrogen-doped graphene, nitrogen-doped graphene-based FETs could be achieved with an on-off ratio of ∼2 × 108 and an electron mobility of ∼1,500 cm2V−1s−1 for mainstream digital logic devices. Such devices exhibit high reproducibility and wafer-scale uniformity, thermal, bias-stress, long-term stability, and robust flexibility and stretchability. The scalability and versatility of this transfer-free approach for the flexible and stretchable FETs pave the way for high-performance nitrogen-doped graphene-based digital logic circuits.

Photonic Spin‐Hall Logic Devices Based on Programmable Spoof Plasmonic Metamaterial

AbstractThe entanglement of the momentum of light with its spin at interfaces or inside structured media, known as the photonic spin‐Hall effect, holds great promise for various applications, such as beam splitting, focusing, and polarization detection. However, the photonic spin‐Hall effect remains unexplored in the field of logic operation. In this work, the photonic spin‐Hall effect of spoof surface plasmon polaritons (SSPPs) in programmable metamaterial is demonstrated. Moreover, photonic spin‐Hall logic devices based on programmable spoof plasmonic metamaterial are designed, enabling the control of energy flow through the utilization of both spin and digital coding, with examples including SSPPs logic gates such as the “AND” gate, the “NIMPLY” gate (A AND NOT B), the “OR” gate, and the “NOT” gate. The findings introduce the combination of digital coding metamaterial with the photonic spin Hall effect, which offers a powerful and flexible platform for controlling electromagnetic waves in information processing.