Structures with strained and unstrained silicon layers were studied by ultrasoft X − ray emission spectroscopy and X − ray absorption near edge structure spectroscopy with the use of synchrotron radiation techniques the SOI (silicon − on − insulator). Analysis of X − ray data has shown a noticeable transformation of the electron energy spectrum and local partial density of states distribution in valence and conduc- tion bands in the strained silicon layer of the SOI structure. USXES Si L 2,3 spectra analysis revealed a decrease of the distance between the L ′ 2v и L 1v points in the valence band of the strained silicon layer as well as a shift of the first two maxima of the XANES first derivation spectra to the higher energies with respect to conduction band bottom E c . At the same time the X − ray standing waves of synchrotron radiation ( λ ~ 12 − 20 nm) are formed in the silicon − on − insulator structure with and without strains of the silicon layer. Moreover the synchrotron radiation grazing angle θ changing by 2 ° leads to a change of the electromagnetic field phase to the opposite.
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