Lithography System Research Articles

Bandwidth-aware fast inverse lithography technology using Nesterov accelerated gradient

Inverse lithography technology (ILT) is a leading-edge method for improving the resolution and image fidelity of optical lithography systems in semiconductor manufacturing. However, the massive computational complexity of ILT presents the inherent runtime bottleneck, which hinders its application to the large-scale lithography layouts. This paper innovates a fast ILT method by reducing both of the inherent algorithmic complexity and the required iteration number. Based on the diffraction-limited nature of optical lithography system, a bandwidth-aware acceleration approach is applied to reduce the calculation complexities of the forward imaging model and inverse gradient computation in each ILT iteration. In addition, a carefully designed algorithm based on the Nesterov accelerated gradient (NAG) is developed to achieve nearly quadratic convergence rate, thereby reducing the total number of iterations required to obtain the optimal solution. Numerical experiments show that the proposed method can improve the speed by hundreds of times over the traditional gradient-based ILT algorithms without sacrificing accuracy.

Advancements and Challenges in Photomask Technologies for Semiconductor Lithography: A Comparative Review of Binary, PhaseShift, and EUV Masks

This report investigates essential photomask technologies in semiconductor manufacturing and their developments. It outlines the principles and uses of binary photomasks, attenuated phase shift masks, and extreme ultraviolet (EUV) photomasks in lithography systems. With technological advancements, masks have evolved to tackle the demand for smaller feature sizes. Despite these advancements, each mask type has specific applications and constraints. The report also touches on other mask types, including ternary, chromeless phase lithography (CPL), and silicon-containing masks, and anticipates future challenges and directions in photomask technology

Iterative control decoupling tuning for precision MIMO motion systems: A matrix update method

Control decoupling is the basic control step for precision MIMO (Multi-Input-Multi-Output) motion systems. After decoupling, the MIMO logical controlled plant can be diagonal dominant so that the control design for each DOF (Degree of Freedom) can be separately treated. However, due to the manufacturing tolerances and the assembling errors, the actual CoG (Center of Gravity) and actuator positions are inconsistent with the designed values. The nominal static control decoupling matrix is inaccurate, which significantly deteriorates the decoupling performance. To address the problem, this paper develops a matrix update based iterative control decoupling tuning method. Tuning with feedback control signals to achieve accurate tuning is its first distinct feature. By employing rigid-body model information to construct more accurate basis functions, fast tuning can also be achieved, especially for relatively low control bandwidth occasions. Differing from the feedforward compensation based iterative control decoupling tuning method, the matrix update method improves the dynamics of the logical controlled plant, does not increase the control complexity and is more robust to the inaccuracy of the model information. Experimental results on the short-stroke module of a precision motion stage which is the key subsystem of the lithographic projection lens testing system present significant control decoupling performance improvement (for example the peak value of the Rx-DOF servo error caused by the Z-DOF movement is reduced from 1.29 ×10−5 m to 3.19 ×10−6 m) after just two trials.

Aperiodic multilayer masks for M3D mitigation in high- and hyper-NA extreme ultraviolet lithography

As extreme ultraviolet lithography tools with higher image numerical apertures (NAi) are introduced, the range of angles at the multilayer mask stack is also increased. Lithography systems are designed to fulfill the “abbe sine rule,” where NAm is related to NAi by the reduction factor. As a result, increases in NAi will increase NAm. High-NA and hyper-NA systems will be implemented with anamorphic optics, 4× in “X,” and 8× in “Y” to reduce the necessary angles. Even so, hyper-NA masks may see illumination angles as high as 13.4°, up from 10.8° for 0.33 NA. This represents a challenge for maintaining through-angle mask reflection using the current periodic mask multilayer structures. In addition to the reflectance amplitude, the phase of reflected light, which plays an important role in imaging, is also strongly influenced by increasing angles. The propagation of light through each bilayer in the stack imparts a phase shift based on the incidence angle. This is then accumulated over many layers, inducing phase effects, which are unique to each illumination point. This will become especially true for high-NA and hyper-NA mask applications. While adjustments to the multilayer period are sufficient to achieve acceptable reflectance, periodic multilayers may suffer in normalized image log slope (NILS) and image placement error (IPE) metrics as a result of strong oblique multilayer M3D phase effects. In this work, we present a first principles methodology for the systematic reduction of oblique multilayer M3D effects through the use of aperiodic multilayer design. We find that when used for low-k1, hyper-NA patterning NILS is improved by 40+%, while IPE through pitch is similarly improved. Under high-NA conditions, a 5%–25% NILS gain is found alongside the enhanced depth of focus.

Controllable variable beam diameter ion source based on the Einzel lens

With the development of modern optical systems, high-power laser systems, ultraviolet lithography systems, etc., the requirements for the precision and processing efficiency of optical components continue to increase. Although sub-nanometer precision can be achieved with current ion beam figuring, the introduction of additional removal layers greatly limits its machining efficiency due to the inability of the machine dynamics to satisfy the velocity and acceleration requirements mathematically. Therefore, an efficient figuring technology of controllable variable beam diameter ion beam based on the Einzel lens has been proposed. The simulation results show that the ion beam diameter can be effectively controlled by adjusting the voltage of the Einzel lens. The experimental results show that the ion source can control the ion beam diameter by voltage, and then change the size of the ion beam, and obtain a very small removal function. The FWHM is reduced from 12.1 mm to 10.1 mm, and the peak removal rate is increased by 1.7 times, which significantly improves the removal efficiency and figuring ability. Therefore, this work aims to improve the accuracy of ion beam figuring of high-power laser optical components and address the problem of reduced efficiency caused by additional removal layers in the existing figuring process.

Dynamics of ionized poly(4-hydroxystyrene)-type resist polymers with tert-butoxycarbonyl-protecting group

The imaging reactions of resist materials used for nano-patterning have become radiation-chemical reactions, with the shortening of wavelengths of the exposure light sources in lithography systems. The most widely used patterning materials in industrial lithography are chemically amplified resists (CAR). Understanding the deprotonation mechanism of ionized polymers (radical cations) is important for acid generation in CARs. In this study, the dynamics of radical cations in poly(4-hydroxystyrene) (PHS)–type resist polymers, partially and totally protected by tert-butoxycarbonyl (t-BOC) groups, are investigated using a combination of electron pulse radiolysis experiments, acid yield measurements, and quantum chemical calculations. The t-BOC(oxy) group exhibits π-electron-donating behavior in the monomer cation but changes to electron-accepting behavior in the polymer cation, owing to the interaction between substituents. The destabilization of radical cations due to decreased intramolecular charge resonance may contribute to the high deprotonation efficiency of t-BOC-capped PHS polymers.

Illumination Field Uniformity Correction by Novel Finger Arrays for Lithography Illumination System

In order to correct the integrated nonuniformity of a lithographic illumination field, a high-precision uniformity correction method for an advanced lithographic illumination system is proposed. The method adopts the opaque finger array structure and improves correction ability and accuracy by optimizing the arrangement and structure of the unit without changing the width of each unit. The correction accuracy is expressed as the percentage of the corrected integrated nonuniformity. Through theoretical analysis and simulation, it can be seen that the correction accuracy of a staggered finger array is better than 0.22%. When staggered and layered, the correction accuracy of a finger array is better than 0.14%, which is better than that of a non-layered finger array. When staggered, layered, and chamfered of each unit, the correction accuracy of the finger array structure is better than 0.12%.

Mask structure optimization for beyond EUV lithography.

Beyond extreme ultraviolet (BEUV) lithography with a 6 × nm wavelength is regarded as a future technique to continue the pattern shirking in integrated circuit (IC) manufacturing. This work proposes an optimization method for the mask structure to improve the imaging quality of BEUV lithography. Firstly, the structure of mask multilayers is optimized to maximize its reflection coefficient. Then, a mask diffraction near-field (DNF) model is established based on the Born series algorithm, and the aerial image of BEUV lithography system can be further calculated. Additionally, the mask absorber structure is inversely designed using the particle swarm optimization (PSO) algorithm. Simulation results show a significant improvement of the BEUV lithography imaging obtained by the proposed optimization methods. The proposed workflow can also be expanded to areas of EUV and soft x ray imaging.

Simple visual focusing and alignment technology for digital lithography

A simple visual focusing and alignment technology for digital lithography, which requires only one imaging system to capture both focusing and alignment information, is proposed. Firstly, the Brenner function and the global search method were chosen among the various sharpness evaluation functions, achieving visual precision focusing. Then, the mutual mapping relationship between DMD plane and CCD plane was established by image alignment technique, realizing the visualized precision alignment. Finally, a digital lithography system based on the proposed method was built and experimentally verified, by which the preparation of a grating with a line width of 1.35 μm was achieved, reaching the limit of the system resolution, and the alignment accuracy of the method reached 0.2 μm. Moreover, the mapping exposure experiments showed that the pre-exposure patterns could be converted between DMD and CCD planes, and the visualization of microstructure preparation was truly realized. This method improves the convenience of microstructure preparation and can greatly meet the needs of material scientists regarding microstructure preparation.

Measurement and optimization of writing light field uniformity in dual-galvanometer laser scanning lithography system

The light field uniformity (LFU) in lithography system is a key factor in defining the resolution across the entire micro/nano structures. In this work, a cost-effective and straightforward method based on the focused laser marking on heat-mode resist is proposed for measuring and optimizing the LFU. The factors affecting the LFU are analyzed from the perspectives of optical system aberrations and mechanical assembly error. Subsequently, marking patterns with special structures are designed based on the properties of the heat-mode resist. By analyzing the marked patterns, the LFU of the system is obtained with uniformity coefficient is 42.24%. After optimization achieved by dynamic laser power adjustment, the uniformity coefficient was notably enhanced to 96.11%. This work provides an effective method for measuring and optimizing the LFU in dual-galvanometer laser scanning lithography system.

Development of Micro/Nano Pattern Arrays with Grating-Based Periodic Structures using the Direct Laser Lithography System

Introduction: This research delves into utilizing the Direct Laser Lithography System to produce micro/nanopattern arrays with grating-based periodic structures. Initially, refining the variation in periodic structures within these arrays becomes a pivotal pursuit. This demands a deep comprehension of how structural variation aligns with specific applications, particularly in photonics and material science. Method: Advancements in hardware, software, or process optimization techniques hold potential for reaching this objective. Using an optical beam, this system enables the engraving of moderate periodic and quasi-periodic structures, enhancing pattern formation in a three-dimensional environment. Through cost-effective direct-beam interferometry systems utilizing 405 nm GaN and 290 to 780 nm AlInGaN semiconductor laser diodes, patterns ranging from in period were created, employing 300 nm gratings. Result: The system's cost-efficiency and ability to achieve high-resolution permit the creation of both regular and irregular grating designs. By employing an optical head assembly from a bluray disc recorder, housing a semiconductor laser diode and an objective lens with an NA of 0.85, this system displays promising potential in progressing the fabrication of micro/nanopattern arrays. Conclusion: Assessing their optical, mechanical, and electrical properties and exploring potential applications across varied fields like optoelectronics, photovoltaics, sensors, and biomedical devices represent critical strides for further exploration and advancement.

Poisson Effect‐Assisted Replication Lithography for Rapid Fabrication of Three‐Dimensional Microstructures

Demands for micro‐ and nano‐fabrication techniques have been increasing over recent decades due to their foundational importance in fields such as electronics, sensors, displays, biotechnologies, and energy technologies. Still, the rapid and efficient fabrication of complex 3D microstructures has long been a challenge due to the inherent limitations of conventional imprint lithography and the slow fabrication speed of maskless lithography systems using femtosecond lasers. This study introduces a novel lithographic replication method for the rapid replication of intricate 3D microstructures with closed‐loops by leveraging the Poisson effect‐driven lateral deformation of soft molds. Specifically, the suggested technique employs an elastomeric soft mold, engraved with negative cavity parts of the target structure separated by intentional gaps. Lateral deformation of the material allows the separated cavities to assemble for replication of target microstructure and defectless release from the soft mold. In addition to the experimental demonstrations of the proposed method using well‐known materials like polydimethysliloxane (PDMS) for the soft mold and UV‐curable polyurethane acrylate (PUA) for replication, essential considerations such as material selection and master mold design are discussed. The presented method not only broadens the capabilities of imprint lithographic techniques but also holds promise for the large scale, continuous fabrication of complex 3D microstructures.

Advanced ice lithography system using a micro-machined Joule-Thomson cooler

This study introduces a novel ice lithography system integrated with a low-vibration micro-machined Joule-Thomson cooler. Ice lithography is an eco-friendly method for high-resolution nanofabrication on delicate substrates and requires to operate below 130 K in the vacuum of a microscope chamber. Previously, liquid nitrogen rather than cryocoolers was used to cool the system due to its low vibration, but it is both bulky and costly. To overcome these challenges, this study employs a low-vibration micro-machined cooler in a scanning electron microscope (SEM) for ice lithography. The design and methodology of the system are described in detail. The results show that the substrate can reach a temperature of 105 K within 30 minutes with a measured mechanical vibration of less than 10 nm, enabling high-resolution nanofabrication. As proof of concept, the system successfully fabricates nanoscale patterns on a silicon wafer. This low-vibration cooling system has great potential for use in cryogenic electron microscopes (cryo-EMs) in the future.

Developments in Mask-Free Singularly Addressable Nano-LED Lithography

LED devices are increasingly gaining importance in lithography approaches due to the fact that they can be used flexibly for mask-less patterning. In this study, we briefly report on developments in mask-free lithography approaches based on nano-LED devices and summarize our current achievements in the different building blocks needed for its application. Individually addressable nano-LED structures can form the basis for an unprecedented fast and flexible patterning, on demand, in photo-chemically sensitive films. We introduce a driving scheme for nano-LEDs in arrays serving for a singularly addressable approach. Furthermore, we discuss the challenges facing nano-LED fabrication and possibilities to improve their performance. Additionally, we introduce LED structures based on a hybrid nanocrystal/nano-LED approach. Lastly, we provide an outlook how this approach could further develop for next generation lithography systems. This technique has a huge potential to revolutionize the field and to contribute significantly to energy and resources saving device nanomanufacturing.

A micromachined Joule-Thomson cryocooler for ice lithography

A micromachined Joule-Thomson cryocooler has been designed as a cryostage for ice lithography, which allows high-pressure nitrogen throttling to liquefy and fast cool samples with low vibration. The sample can be cooled down to 99.5 K in 30 min and then heated up to room temperature in 10 min. Compared with previous cooling systems based on liquid nitrogen, the Joule-Thomson cryostage has resulted in a significant 90% reduction in cooling time and a decrease in operating temperature by 30 K. Besides, the nitrogen mass-flow rate beneath the sample remains <20 mg/s to minimize vibration. The measured peak-to-peak amplitude at the minimum temperature is about 5.6 nm. As the first cooler integration within an ice lithography system, this Joule-Thomson cryostage not only enables the exploration of a wider range of ice resists, but also can be applied in kinds of microscopes for helping characterize materials at cryogenic temperatures.

Progress in Polyhedral Oligomeric Silsesquioxane (POSS) Photoresists: A Comprehensive Review across Lithographic Systems.

This paper offers a comprehensive overview of the polyhedral oligomeric silsesquioxane (POSS) and POSS-based composites within the realm of photoresist resin. The study involves a systematic exploration and discussion of the contributions made by POSS across various lithographic systems, with specific emphasis on critical parameters such as film formation, sensitivity, resolution, solubility, and edge roughness. These lithographic systems encompass X-ray lithography (XRL), deep ultraviolet nanoimprint lithography (DUV-NIL), extreme ultraviolet lithography (EUV), and guided self-assembled lithography (DSA). The principal objective of this paper is to furnish valuable insights into the development and utilization of POSS-based photoresist materials in diverse lithographic contexts.

Improving grating duty cycle uniformity: amplitude-splitting flat-top beam laser interference lithography.

Laser interference lithography is an effective approach for grating fabrication. As a key parameter of the grating profile, the duty cycle determines the diffraction characteristics and is associated with the irradiance of the exposure beam. In this study, we developed a fabrication technique amplitude-splitting flat-top beam interference lithography to improve duty cycle uniformity. The relationship between the duty cycle uniformity and irradiance of the exposure beam is analyzed, and the results indicate that when the beam irradiance nonuniformity is less than 20%, the grating duty cycle nonuniformity is maintained below ±2%. Moreover, an experimental amplitude-splitting flat-top beam interference lithography system is developed to realize an incident beam irradiance nonuniformity of 21%. The full-aperture duty cycle nonuniformity of the fabricated grating is less than ±3%. Amplitude-splitting flat-top beam interference lithography improves duty cycle uniformity, greatly reduces energy loss compared to conventional apodization, and is more suitable for manufacturing highly uniform gratings over large areas.

Development of electron beam lithography technique for large area nano structural color

Plasmonic color is a structural color generated via preferential light absorption and scattering in dielectric nanostructures. In this study, a large plasmonic color image was successfully fabricated by an electron beam lithography (EBL) system. A software program, referred to as P-color in this study, was developed to facilitate the conversion of a desired color bitmap image to a GDS file composed of multiple nano-patterns to realize plasmonic color. The relationship between the color, width, and pitch of the pattern structures was investigated under different area-dose conditions during EBL as basic data for plasmonic color image design. After establishing conversion techniques for both the large-capacity GDS and EBL files, a plasmonic color image sample with a size of 60 mm × 40 mm area (which is difficult to fabricate using a conventional point-type EBL system) was successfully fabricated.

Integrated Deep Ultraviolet Doublet Metalens for Projection Imaging

Metalenses, with their unique modulation of light, are in great demand for many potential applications. As a proof-of-principle demonstration, we focus on designing SiO2 metalenses that operate in the deep ultraviolet region, specifically around 193 nm. Based on the deep ultraviolet metalens proposed in this paper, an integrated deep ultraviolet doublet metalens is further offered. When the incident light is a plane wave with a wavelength of 193 nm, the integrated doublet metalens can reduce the beam size by a factor of 4:1, and the emitted light is flat. The integrated doublet metalens can project the reticle image proportionally, making the projection image clear. The integrated doublet metalens has the best imaging effect at the propagation distance of 2 μm and can tolerate ±3 degrees of incident angle deviation. Our findings establish general and systematic strategies to guide the design of traditional optical lens arrays with excellent integrated doublet metalenses and pave the way for enhanced optical performance in the application of large-relative-aperture deep ultraviolet detection, deep ultraviolet microscope systems, laser beam combining systems, deep ultraviolet lithography systems, etc.

Dynamic budget analysis of multiple parameters in a lithography system based on the superposition of light intensity fluctuations.

Lithography is one of the most critical processes in the manufacturing of micro- and nano-devices. As device critical dimensions continue to shrink, variations in system parameters during the lithography process often result in heavy deviations from the intended targets, making control of these parameters crucial to ensure that lithography results meet process requirements. Gaining a thorough comprehension of how various parameters interact and contribute to lithography errors is significant, and it is equally important to offer precise suggestions for managing these parameters in extreme ultraviolet lithography (EUVL) scanners. This paper analyzes the key physical factors in the light source, illumination system and projection system of EUVL scanners and proposes what we believe to be a new methodology of budget analysis utilizing the superposition of light intensity fluctuations. Then the corresponding characteristics of light intensity fluctuations are analyzed when these parameters have fluctuated through theoretical formula derivation. A mapping model was established between parameter fluctuations and imaging outcomes through the distribution of light intensity. The yield requirements for critical dimension and pattern shift in EUVL are used to determine the exact budget range for each parameter in the proposed methodology. By controlling the parameters according to the budget analysis method proposed in this paper, the deviation between the experimental results from the yield requirements is no more than 0.1% in average. This approach allows for dynamic updating of the control range of relevant parameters based on their distinct characteristics to accommodate the unique fingerprints of various EUVL scanners. Furthermore, based on this adaptive budget range of multiple parameters, it can offer distinct direction for the development of lithography equipment or serve as a clear indication for parameter monitoring.