Lithium Niobate Thin Films Research Articles

Sub-terahertz optomechanics

We demonstrate optomechanics in the sub-terahertz regime. An optical racetrack resonator, patterned from thin-film lithium niobate, is suspended to support mechanical structures oscillating at these extremely high frequencies, which are read out through cavity optomechanical coupling. Our hybrid platform paves the way for advancing mechanical systems in the quantum regime at elevated temperatures.

High-Speed Electro-Optic Modulators Based on Thin-Film Lithium Niobate.

Electro-optic modulators (EOMs) are pivotal in bridging electrical and optical domains, essential for diverse applications including optical communication, microwave signal processing, sensing, and quantum technologies. However, achieving the trifecta of high-density integration, cost-effectiveness, and superior performance remains challenging within established integrated photonics platforms. Enter thin-film lithium niobate (LN), a recent standout with its inherent electro-optic (EO) efficiency, proven industrial performance, durability, and rapid fabrication advancements. This platform inherits material advantages from traditional bulk LN devices while offering a reduced footprint, wider bandwidths, and lower power requirements. Despite its recent introduction, commercial thin-film LN wafers already rival or surpass established alternatives like silicon and indium phosphide, benefitting from decades of research. In this review, we delve into the foundational principles and technical innovations driving state-of-the-art LN modulator demonstrations, exploring various methodologies, their strengths, and challenges. Furthermore, we outline pathways for further enhancing LN modulators and anticipate exciting prospects for larger-scale LN EO circuits beyond singular components. By elucidating the current landscape and future directions, we highlight the transformative potential of thin-film LN technology in advancing electro-optic modulation and integrated photonics.

Efficient sum-frequency generation of a yellow laser in a thin-film lithium niobate waveguide.

Yellow lasers with high efficiency and tunability play an essential role in many applications. Here, we demonstrate the sum-frequency generation (SFG) of yellow light on a periodically poled thin-film lithium niobate (PP-TFLN) waveguide. Taking advantage of large χ(2) nonlinearity, a high normalized conversion efficiency of 10,097% (W·cm2) is obtained with pump wavelengths of 1317.7 and 1064 nm. An absolute conversion efficiency of 24.17% is recorded with on-chip pump powers of 10.4 dBm (O-band) and 13.5 dBm (1064 nm).

Integrated thin-film lithium niobate electro-optic frequency comb for picosecond optical pulse train generation

In recent years, high-performance thin-film lithium niobate (TFLN) electro-optic (EO) modulators boost the fast development of highly integrated, low loss, and large comb spacing EO frequency combs. Furthermore, ultra-short optical pulse trains (USOPTs) can be generated by the temporal domain compression of the optical frequency comb, which play an essential role in photonic sampling analog-to-digital conversion. Here, we demonstrate a flat and broadband EO frequency comb based on a packaged TFLN chip including a monolithic integrated intensity modulator, a phase modulator, and edge couplers. The 25 comb lines with a power fluctuation less than 3 dB are presented successfully. Moreover, we obtain a 10 GHz repetition rate USOPT, the pulse width of which is compressed to 2.67 ps. Our device may find its applications in the fields of ultrafast measurement, wavelength-division-multiplexing optical communication, or high-precision photonic sampling.

Asymmetrical Lamb wave mode resonant infrared detector based on lithium niobate thin film

This work explores the infrared (IR) detection capabilities of 750 nm thick Z-cut lithium niobate (LN) thin film resonator at asymmetric modes of various orders: the first, third, fifth, and seventh order asymmetric (A1, A3, A5, and A7), with resonant frequencies of 2.35, 6.68, 11.09, and 15.49 GHz. Under the infrared radiation of 0.575 mW, the responses about admittance minima and frequency drift corresponding to these modes have been experimentally validated. Notably, the A1 mode exhibits the most significant admittance dip response with 2.62 dB, while the A7 mode demonstrates a maximum frequency drift response of 670 kHz. The optimal parameter for noise equivalent power reaches 15.41 pW/Hz1/2, and the optimal detectivity achieves 7.40 × 106 m Hz1/2/W. These findings indicate the immense potential of LN thin-film resonators for infrared sensing applications.

Polarization-insensitive and high-efficiency edge coupler for thin-film lithium niobate.

In this Letter, we propose and demonstrate a fiber-to-chip edge coupler (EC) on an x-cut thin film lithium niobate (TFLN) for polarization-insensitive (PI) coupling. The EC consists of three width-tapered full-etched waveguides with silica cladding and matches well with a single-mode fiber (SMF). The measured results show that the minimum coupling losses for TE0/TM0 modes remain to be 0.9 dB/1.1 dB per facet, and the polarization dependent loss (PDL) is <0.5 dB over the wavelength range from 1260 to 1340 nm. Moreover, the EC features large misalignment tolerance of ±2 µm in the Z direction and ±1.5 µm in the X direction for both polarizations for a 1 dB penalty. To the best of our knowledge, this is the first realized O-band edge coupler on TFLN with SMF. The proposed device shows promising potential for integration into TFLN polarization diversity devices.

Photon-pair generation using inverse-designed thin-film lithium niobate mode converters

Spontaneous parametric down-conversion (SPDC) has become a key method for generating entangled photon pairs. Periodically poled thin-film lithium niobate (TFLN) waveguides induce strong SPDC but require complex fabrication processes. In this work, we experimentally demonstrate efficient SPDC and second harmonic generation using modal phase matching methods. This is achieved with inverse-designed optical mode converters and low-loss optical waveguides in a single nanofabrication process. Inverse design methods provide enhanced functionalities and compact footprints for the converter. Despite the extensive achievements in inverse-designed photonic integrated circuits, the potential of inverse-designed TFLN quantum photonic devices has been seldom explored. The device shows an on-chip conversion efficiency of 3.95% W−1 cm−2 in second harmonic generation measurements and a coincidence count rate up to 21.2 kHz in SPDC experiments. This work highlights the potential of the inverse-designed TFLN photonic devices and paves the way for their applications in on-chip nonlinear or quantum optics.

Broadband frequency comb generation through cascaded quadratic nonlinearity in thin-film lithium niobate microresonators.

Broadband frequency comb generation through cascaded quadratic nonlinearity remains experimentally untapped in free-space cavities with bulk χ(2) materials mainly due to the high threshold power and restricted ability of dispersion engineering. Thin-film lithium niobate (LN) is a good platform for nonlinear optics due to the tight mode confinement in a nano-dimensional waveguide, the ease of dispersion engineering, large quadratic nonlinearities, and flexible phase matching via periodic poling. Here we demonstrate broadband frequency comb generation through dispersion engineering in a thin-film LN microresonator. Bandwidths of 150 nm (80 nm) and 25 nm (12 nm) for center wavelengths at 1560 and 780 nm are achieved, respectively, in a cavity-enhanced second-harmonic generation (doubly resonant optical parametric oscillator). Our demonstration paves the way for pure quadratic soliton generation, which is a great complement to dissipative Kerr soliton frequency combs for extended interesting nonlinear applications.

High-Bandwidth Lumped Mach-Zehnder Modulators Based on Thin-Film Lithium Niobate

Recently, lumped Mach-Zehnder Modulators (MZMs) have received renewed attention due to their potential for low power consumption and compact size. However, the practicality of lumped MZMs with conventional lumped electrodes (C−LEs) is limited by their lower electro−optical (EO) bandwidth. The reduction in EO bandwidth results from the inherent trade−off between EO bandwidth and half−wave voltage length product (VπL) within the C−LE architecture. This paper proposes a thin−film lithium niobate (TFLN)−based lumped MZM with capacitively−loaded lumped electrodes (CL−LEs). The purely linear EO effect of the LN eliminates the parasitic capacitance in the doped PN junction and enhances the EO bandwidth. Furthermore, the CL−LE structure can break the limitation between EO bandwidth and VπL inherent in the C−LE design. Simulations show the proposed device achieves a high EO bandwidth of 32.4 GHz and a low VπL of 1.15 V·cm. Due to the reduced capacitance and lower VπL, the power consumption of the device is as low as 0.1 pJ/bit. Simulation results indicate that the open−eye diagrams are achieved at 64 Gb/s for 1.5 mm TFLN lumped MZM, with an ER of 2.97 dB. Consequently, the proposed device architecture substantially enhances the performance of lumped MZMs, showing promise for application in short−reach optical interconnects within data centers.

High performance polarizer on thin-film lithium niobate with width-tapered Euler bending.

In this Letter, we propose and demonstrate an integrated polarizer on thin film lithium niobate (TFLN). The polarizer consists of a width-tapered 180° Euler bending waveguide featuring thin thickness and bilevel mode convertors with silica cladding. Notably, the TE0 mode is efficiently confined in the waveguide, while the TM0 mode confronts significant bending losses. The measurements reveal that the excess loss remains below 1.5 dB, and the extinction ratio surpasses 19 dB within a working bandwidth spanning from 1480 to 1578 nm. The proposed polarizer holds considerable promise for enhancing polarization handling within TFLN photonic circuits.

Design of ultra-compact thin-film lithium niobate edge coupler based on micro–nano structure

High coupling loss due to fiber-to-chip mode mismatch is considered as one of the main hindrances to thin-film lithium niobate (TFLN) devices to replace their bulk counterparts in engineering applications. In this work, we introduce subwavelength micro–nano structure and slot-strip mode coupling to design an efficient and ultra-compact edge coupler to solve the mismatch issue. The total device length is 130 μm, which is only 43% of the lengths of general TFLN edge couplers and even 35% shorter than the shortest one while maintaining low coupling loss (0.47 dB/0.38 dB per facet @1550 nm for TE/TM mode). This work provides a case study for the design of integrated photonic devices on the TFLN platform.

On-chip topological phononic crystal acoustic waveguide based on lithium niobate thin films

This Letter introduces an on-chip topological phononic crystal (PnC) acoustic waveguide employing lithium niobate thin films. Utilizing a C3v symmetry-breaking mechanism, the topological PnC acoustic waveguide is achieved, operating at frequencies exceeding 430 MHz. A SH0 mode acoustic transceiver is designed, enabling highly efficient on-chip acoustic wave transmission and reception. The fabricated topological PnC waveguide demonstrates a propagation loss of 11.3 dB/mm at the edge mode. An acoustic beam splitter utilizing topological edge mode has been demonstrated, showing the configurability of the topological PnC acoustic waveguide. These results offer significant promise for advancing the development of hybrid phononic circuits tailored for high-frequency acoustic information processing, sensing, and manipulation.

High Q lithium niobate metasurfaces with transparent electrodes for efficient amplitude and phase modulation

Lithium niobate (LN)-based metasurfaces have demonstrated remarkable potential in integrated electro-optically adjustable metadevices with the maturation of thin film LN on insulator (LNOI) technology. Here, we proposed a type of high Q factor tunable metasurface with etchless LN, which is electrically driven in the vertical direction by using transparent conductive film. A transmission amplitude modulation of over 60 dB at a voltage of 20 V is realized through guided mode resonances created at the LN layer with a Q factor of 1320. Meanwhile, phase modulation is also realized with a reflective design by adding a gold layer at the bottom of the metasurface. With a gate voltage of 80 V, about 1.75π phase modulation is achieved while keeping reflection over 92%. Our proposed device achieves effective modulation of optical amplitude and phase in the near-infrared band, which lays a good foundation for the development of high performance LN-based active nanophotonic devices.

Lithium Niobate Electro-Optic Modulation Device without an Overlay Layer Based on Bound States in the Continuum.

Electro-optic modulation devices are essential components in the field of integrated optical chips. High-speed, low-loss electro-optic modulation devices represent a key focus for future developments in integrated optical chip technology, and they have seen significant advancements in both commercial and laboratory settings in recent years. Current electro-optic modulation devices typically employ architectures based on thin-film lithium niobate (TFLN), traveling-wave electrodes, and impedance-matching layers, which still suffer from transmission losses and overall design limitations. In this paper, we demonstrate a lithium niobate electro-optic modulation device based on bound states in the continuum, featuring a non-overlay structure. This device exhibits a transmission loss of approximately 1.3 dB/cm, a modulation bandwidth of up to 9.2 GHz, and a minimum half-wave voltage of only 3.3 V.

Highly efficient visible and near-IR photon pair generation with thin-film lithium niobate

Efficient on-chip entangled photon pair generation at telecom wavelengths is an integral aspect of emerging quantum optical technologies, particularly for quantum communication and computing. However, moving to shorter wavelengths enables the use of more accessible silicon detector technology, and opens up applications in imaging and spectroscopy. Here, we present high brightness ((1.6 ± 0.3) × 109 pairs/s/mW/nm) visible–near-IR photon pair generation in a periodically poled lithium niobate nanophotonic waveguide. The degenerate spectrum of the photon pairs is centered at 811 nm with a bandwidth of 117 nm when pumped with a spectrally multimode laser diode. The measured on-chip source efficiency of (2.3 ± 0.5) × 1011 pairs/s/mW is on par with source efficiencies at telecom wavelengths and is also orders of magnitude higher than the efficiencies of other visible sources implemented in bulk crystal or diffused waveguide-based technologies. Further improvements in the brightness and efficiencies are possible by pumping the device with a single-frequency laser, which would also shrink the pair bandwidth. These results represent the shortest wavelength of photon pairs generated in a nanophotonic waveguide reported to date by nearly an octave.

Wafer-Scale Periodic Poling of Thin-Film Lithium Niobate.

Periodically poled lithium niobate on insulator (PPLNOI) offers an admirably promising platform for the advancement of nonlinear photonic integrated circuits (PICs). In this context, domain inversion engineering emerges as a key process to achieve efficient nonlinear conversion. However, periodic poling processing of thin-film lithium niobate has only been realized on the chip level, which significantly limits its applications in large-scale nonlinear photonic systems that necessitate the integration of multiple nonlinear components on a single chip with uniform performances. Here, we demonstrate a wafer-scale periodic poling technique on a 4-inch LNOI wafer with high fidelity. The reversal lengths span from 0.5 to 10.17 mm, encompassing an area of ~1 cm2 with periods ranging from 4.38 to 5.51 μm. Efficient poling was achieved with a single manipulation, benefiting from the targeted grouped electrode pads and adaptable comb line widths in our experiment. As a result, domain inversion is ultimately implemented across the entire wafer with a 100% success rate and 98% high-quality rate on average, showcasing high throughput and stability, which is fundamentally scalable and highly cost-effective in contrast to traditional size-restricted chiplet-level poling. Our study holds significant promise to dramatically promote ultra-high performance to a broad spectrum of applications, including optical communications, photonic neural networks, and quantum photonics.

A high-power narrow-linewidth microlaser based on active-passive lithium niobate photonic integration

We demonstrate an on-chip integrated Fabry-Perot (FP) resonator laser with high output power and narrow linewidth. The laser chip is fabricated on monolithically integrated active (i.e., Er3+-doped) and passive (i.e., non-doped) thin film lithium niobate (TFLN) substrate in which the laser cavity is constructed with two Sagnac loop reflectors fabricated on the passive TFLN. The monolithically integrated FP resonator laser achieves an output power of 126.35 μW and a linewidth of 47.5 kHz.

On-chip wavelength division multiplexing by angled multimode interferometer fabricated on erbium-doped thin film lithium niobate on insulator

Abstract Photonic-integrated circuits based on erbium-doped thin film lithium niobate on insulator has attracted broad interests with insofar various waveguide amplifiers and microlasers demonstrated. Wideband operation facilitated by the broadband absorption and emission of erbium ions necessitates the functional integration of wavelength filter and multiplexer on the same chip. Here, a low-loss wavelength division multiplexer at the resonant pumping and emission wavelengths (∼1480 nm and 1530–1560 nm) of erbium ions based on angled multimode interferometer is realized in the erbium-doped thin film lithium niobate on insulator fabricated by the photolithography assisted chemomechanical etching technique. The minimum on-chip insertion losses of the fabricated device are &lt;0.7 dB for both wavelength ranges, and a 3-dB bandwidth of &gt;20 nm is measured at the telecom C-band. Besides, direct visualization of the multimode interference pattern by the visible upconversion fluorescence of erbium ions compares well with the simulated light propagation in the multimode interferometer. Spectral tuning of the wavelength division multiplexer by structural design is also demonstrated and discussed.

Two-dimensional thin film lithium niobate photonic crystal waveguide for integrated photonic chips

The photonic crystal waveguide (PCW) possesses remarkable capabilities in manipulating light beams and light–matter interactions within the subwavelength range. This property renders it a highly promising structure for the miniaturization of optical devices. We delve into the mode characteristics in two-dimensional PCWs on thin film lithium niobate, establish the correlation between the single-mode region in the PCW and its photonic crystal duty cycle, and observe mode hybridization in the waveguide. A lithium niobate PCW with sidewall angles can realize single-mode transmission or mode conversion by adjusting the width of its defective waveguides, and it is theoretically and experimentally verified that a change in the width of the waveguide shifts the operating wavelength. The results of the mode analysis are useful in the design of waveguide structures for photonic crystal-based electro-optical modulators and optical sensors.

Broadband Thin-Film Lithium Niobate Electro-Optic Modulator

Recently, thin-film lithium niobate electro-optical modulators have developed rapidly and have become the core solution for the next generation of electro-optical problems. Compared with bulk lithium niobate modulators, these modulators not only retain the advantages of lithium niobate materials, such as low loss, high extinction ratio, high linear response and high optical power handling capabilities, but can also effectively improve some performance parameters, such as the voltage bandwidth performance of the modulator. Unfortunately, the extremely small electrode gap of thin-film lithium niobate EO (electro-optic) modulators causes metal absorption, resulting in higher microwave losses. The electro-optical performance of the modulator, thus, deteriorates at high frequencies. We designed traveling-wave electrodes with microstructures to overcome this limitation and achieve a 3 dB electro-optical bandwidth of 51.2 GHz. At the same time, we maintain low on-chip losses of &lt;2 dB and a high extinction ratio of 15 dB. It is important to note that the devices we manufactured were metal-encapsulated and passed a series of reliability tests. The success of this modulator module marks a key step in the commercialization and application of thin-film lithium niobate modulation devices.