Abstract
We demonstrate an on-chip integrated Fabry-Perot (FP) resonator laser with high output power and narrow linewidth. The laser chip is fabricated on monolithically integrated active (i.e., Er3+-doped) and passive (i.e., non-doped) thin film lithium niobate (TFLN) substrate in which the laser cavity is constructed with two Sagnac loop reflectors fabricated on the passive TFLN. The monolithically integrated FP resonator laser achieves an output power of 126.35 μW and a linewidth of 47.5 kHz.
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