Pulsed laser deposition (PLD) grownDy0.4Ho0.6Ba2Cu3Oz [(D, H)BCO]superconducting films on LaAlO3 substrates have been studied for their critical current density(Jc) and microwavesurface resistance (Rs) in comparison with YBCO films. It is inferred that the best films (grown at800 °C) with transitiontemperature (Tc) 92 Kshowed a higher Jc value above 80 K compared to that of YBCO films. Also, at 77 K, the field dependentJc value of(D, H)BCO films (5 kA cm−2 at 8 T) is 2.5 times higher than that of YBCO films(2 kA cm−2 at 8 T). The best (D, H)BCO films showed lowerRs in the liquid nitrogen(N2) temperatureregion (4.2 m Ω at 77 K)than YBCO films (7.65 m Ω at 77 K) while in the low temperature region (below 60 K) YBCO films exhibit better microwaveperformance irrespective of their deposition temperature. These significantly improved values (both theJc as wellas the Rs values above 77 K) reveal that a rare earth (RE) mixed 123 thin film is a rather better candidate thanYBCO thin film for use in fabricating microwave passive devices operating at high fields and at liquidN2 temperature.