Light Output Power Research Articles

Red light-emitting diode with full InGaN structure on ScAlMgO4 substrate

Abstract Here, we report the first demonstration of full InGaN-based red light-emitting diode (LED) grown on a c-plane ScAlMgO4 substrate. This work represents a potential approach for achieving red emissions from an InGaN quantum well grown on InGaN underlying layers. The LED device exhibits a peak wavelength of 617 nm at a current injection of 40 mA (10.5 A/cm2). The light output power and external quantum efficiency were 12.6 µW and 0.016% at 40 mA (10.5 A/cm2), respectively. These results are expected to contribute to the development of longer-wavelength emission LEDs and laser diodes.

Wafer-scale vertical injection III-nitride deep-ultraviolet light emitters

A ground-breaking roadmap of III-nitride solid-state deep-ultraviolet light emitters is demonstrated to realize the wafer-scale fabrication of devices in vertical injection configuration, from 2 to 4 inches. The epitaxial device structure is stacked on a GaN template instead of conventionally adopted AlN, where the primary concern of the tensile strain for Al-rich AlGaN on GaN is addressed via an innovative decoupling strategy, making the device structure decoupled from the underlying GaN template. Moreover, the strategy provides a protection cushion against the stress mutation during the removal of substrates. As such, large-sized wafers can be obtained without surface cracks, even after the removal of the sapphire substrates by laser lift-off. Wafer-scale fabrication of 280 nm vertical injection deep-ultraviolet light-emitting diodes is eventually demonstrated, where a light output power of 65.2 mW is achieved at a current of 200 mA, largely thanks to the significant improvement of light extraction. This work will definitely speed up the application of III-nitride solid-state deep-ultraviolet light emitters featuring high performance and scalability.

High power lateral coupled InAs/GaAs quantum dot distributed feedback lasers grown on Si(001) substrates

High-quality single-frequency semiconductor lasers play a key role in silicon optical integrated systems. Combining high density 8-stacked quantum dot (QD) material and low–loss laterally coupled gratings, we here demonstrate a high output power, low noise, and insensitivity to light feedback 1.3 µm InAs/GaAs QD distributed feedback (DFB) laser grown on Si(001) substrates. For a QD DFB laser of a 3 × 1500 µm2 cavity, it exhibits a high single-mode output light power of up to 25 mW at 20 °C and 1.8 mW at 70 °C, respectively and maintains a stable single–mode operation in the entirely measured temperature range with a maximum side mode suppression ratio (SMSR) of 56.5 dB. Furthermore, the laser has an average relative intensity noise value low to –155.9 dB/Hz and a Lorentzian linewidth narrow to 243 kHz. In addition, the laser shows an insensitivity to optical feedback with a feedback level of –24.9 dB. Lastly, a 7-channel QD DFB laser array emitting at wavelengths from 1274.5 nm to 1290.0 nm are also exhibited with all SMSRs of higher than 45 dB. The results achieved here enable a practical single-frequency Si-based light source for the development of high-performance silicon photonic chips.

Study on the performance of InGaN-based micro-LED by plasma etching combined with ion implantation process

This study utilized blue-light epitaxial wafers and employed semiconductor processes such as maskless laser writing, dry etching, wet etching, passivation layer deposition, electron beam evaporation, and ion implantation to fabricate micro-light emitting diode (μLED) arrays with different pixel sizes but the same emitting area (900 μm²). The μLED arrays with single pixel sizes of 5 μm, 10 μm, and 15 μm were fabricated, with array numbers of 6×6, 3×3, and 2×2, respectively. This study proposes etching the material in the channel region while retaining a certain width for implantation, known as the sidewall ion implantation process, aiming to achieve better insulation characteristics by using ion implantation technology to insulate the sidewall regions. It involves ion bombardment of the defect areas generated after plasma etching and the use of a passivation layer for protection. The isolation characteristics of μLED arrays processed by sidewall implantation exhibited better electrical isolation than those of μLED arrays processed only by plasma. The light output power, external quantum efficiency, and wall-plug efficiency were all superior for the sidewall implantation process when the device was miniaturized to 5 μm. Overall, the sidewall implantation process combined with plasma dry etching effectively improved the light output characteristics, with the enhancement ratio increasing as the device was miniaturized.

Deep near infrared light-excited stable synergistic photodynamic and photothermal therapies based on P-IR890 nano-photosensitizer constructed via a non-cyanine dye

The cyanine dyes represented by IR780 can achieve synergistic photodynamic therapy (PDT) and photothermal therapy (PTT) under the stimulation of near-infrared (NIR) light (commonly 808 nm). Unfortunately, the stability of NIR-excited cyanine dyes is not satisfactory. These cyanine dyes can be attacked by self-generated reactive oxygen species (ROS) during PDT processes, resulting in structural damage and rapid degradation, which is fatal for phototherapy. To address this issue, a novel non-cyanine dye (IR890) was elaborately designed and synthesized by our team. The maximum absorption wavelength of IR890 was located in the deep NIR region (ca. 890 nm), which was beneficial for further improving tissue penetration depth. Importantly, IR890 exhibited good stability when continuously illuminated by deep NIR light. To improve the hydrophilicity and biocompatibility, the hydrophobic IR890 dye was grafted onto the side chain of hydrophilic polymer (POEGMA-b-PGMA-g-CCH) via click chemistry. Then, the synthesized POEGMA-b-PGMA-g-IR890 amphiphilic polymer was utilized to prepare P-IR890 nano-photosensitizer via self-assembly method. Under irradiation with deep NIR light (850 nm, 0.5 W/cm2, 10 min), the dye degradation rate of P-IR890 was less than 5%. However, IR780 was almost completely degraded with the same light output power density and irradiation duration. In addition, P-IR890 could stably generate a large number of ROS and heat at the same time. It was rarely reported that the stable synergistic combination therapy of PDT and PTT could be efficiently performed by a single photosensitizer via irradiation with deep NIR light. P-IR890 exhibited favorable anti-tumor outcomes through apoptosis pathway. Therefore, the P-IR890 could provide a new insight into the design of photosensitizers and new opportunities for synergistic combination therapy of PDT and PTT.

Performance comparison of flip-chip blue-light microLEDs with various passivation

In this study, arrays of μLEDs in four different sizes (5 × 5 μm2, 10 × 10 μm2, 25 × 25 μm2, 50 × 50 μm2) were fabricated using a flip-chip bonding process. Two passivation processes were investigated with one involving a single layer of SiO2 deposited using plasma-enhanced chemical vapor deposition (PECVD) and the other incorporating Al2O3 deposited by atomic layer deposition (ALD) beneath the SiO2 layer. Owing to superior coverage and protection, the double-layers passivation process resulted in a three-order lower leakage current of μLEDs in the 5 μm chip-sized μLED arrays. Furthermore, higher light output power of μLEDs was observed in each chip-sized μLED array with double layers passivation. Particularly, the highest EQE value 21.9% of μLEDs array with 5 μm × 5 μm chip size was achieved with the double-layers passivation. The EQE value of μLEDs array was improved by 4.4 times by introducing the double-layers passivation as compared with that of μLEDs array with single layer passivation. Finally, more uniform light emission patterns were observed in the μLEDs with 5 μm × 5 μm chip size fabricated by double-layer passivation process using ImageJ software.

Highly efficient AlGaN-based deep-ultraviolet light-emitting diodes: from bandgap engineering to device craft

AlGaN-based light-emitting diodes (LEDs) operating in the deep-ultraviolet (DUV) spectral range (210–280 nm) have demonstrated potential applications in physical sterilization. However, the poor external quantum efficiency (EQE) hinders further advances in the emission performance of AlGaN-based DUV LEDs. Here, we demonstrate the performance of 270-nm AlGaN-based DUV LEDs beyond the state-of-the-art by exploiting the innovative combination of bandgap engineering and device craft. By adopting tailored multiple quantum wells (MQWs), a reflective Al reflector, a low-optical-loss tunneling junction (TJ) and a dielectric SiO2 insertion structure (IS-SiO2), outstanding light output powers (LOPs) of 140.1 mW are achieved in our DUV LEDs at 850 mA. The EQEs of our DUV LEDs are 4.5 times greater than those of their conventional counterparts. This comprehensive approach overcomes the major difficulties commonly faced in the pursuit of high-performance AlGaN-based DUV LEDs, such as strong quantum-confined Stark effect (QCSE), severe optical absorption in the p-electrode/ohmic contact layer and poor transverse magnetic (TM)-polarized light extraction. Furthermore, the on-wafer electroluminescence characterization validated the scalability of our DUV LEDs to larger production scales. Our work is promising for the development of highly efficient AlGaN-based DUV LEDs.

Studies on suppressed surface recombination of InGaN-based red light-emitting diodes with V-pits

InGaN-based red light-emitting diodes (LEDs) are a promising candidate to achieve high efficiency, which is highly desired by the display market. Understanding their size-dependent properties is crucial for further performance improvement. In this work, different sized InGaN red LEDs (from 500 × 500 to 15 × 15 µm2) based on V-pits were characterized systematically. The current–voltage characteristics show that the leakage current density, revealed either in forward or reverse bias, is independent of the chip size. Further light output power measurements and current dependent electroluminescence also reveal very weak dependence of the power density on chip size showing insensitivity the chip perimeter. The suppressed surface recombination effect may be due to effective carrier trapping effect by the V-pits, which prevents the carriers from flowing to the sidewalls. By detailed analysis of the spatially resolved electroluminescence, an anti-correlation between the emission wavelengths and the intensities was observed, with the longer wavelength emitting regions exhibit weaker intensity, which can be explained by the reduced carrier density in the V-pit-rich regions as carriers are partially captured by quantum wells associated with the V-pits and the associated dislocations. This study will pave the way for further understanding and improving the efficiency of InGaN red LEDs including micro-LEDs.

Influence of quantum well thickness on the Cathodoluminescent properties of AlGaN-based UVC light source tube with CNT field emitters

Far ultraviolet C (UVC) light sources work well for a variety of applications, such as water purification, bacteria and virus sterilization, and sensing, because of their short wavelength. Herein, the recognized problems with a conventional UVC-LED are solved by creating a triode structure UVC light source tube (UVC-LST) operating at ∼268 nm employing a carbon nanotube (CNT) electron emitter as an excitation source. The UVC light emission of an aluminum reflector-capped AlGaN multiple quantum well (MQW) heterostructures synthesized on a nanopatterned sapphire substrate based on a cathodoluminescence (CL) layer is assessed. For luminescence results comparison, the heterostructure of AlGaN-based MQWs was fabricated with various QW layer thicknesses of 1, 1.5, and 2 nm. The utilization of a thinner QW layer with a thickness of 1 nm significantly improved the UVC light emission efficiency compared to the UVC-LSTs fabricated with thicker QW layers of 1.5 nm and 2 nm. The UVC-LST with the 1 nm QW layer exhibited approximately a 30 % improvement in light output power compared to the UVC-LST with a 1.5 nm QW layer, and closely a 33 % improvement compared to the UVC-LST with a 2 nm QW layer. Moreover, the UVC-LST with the thinner QW layer demonstrated a high power efficiency of 5.24 % when operating on a 2-inch light-emitting area, while consuming a low power of 7 W. This high power efficiency indicates that a significant portion of the input electrical power is effectively converted into UVC light output, highlighting the superior performance of the UVC-LST based on the 1 nm QW layer design.

Efficient and droop-free AlGaN-based UV-C LED using the inverted linearly graded active region and engineered hole source layer

The poor efficiency of the aluminum gallium nitride (AlGaN)-based ultraviolet (UV)-C light emitting diode (LED) remains as the major hindrance towards its commercialization. Thus, to enhance the internal quantum efficiency (IQE) and light output power (LOP) and to mitigate the efficiency droop of AlGaN-based UV-C LED, this simulation work proposes and examines a new engineering strategy, i.e., inverted linearly graded quantum wells along with quantum barriers over a series of samples A, B and C. To further improve the characteristics of AlGaN-based UV-C LED, an engineered linearly graded p-AlGaN layer has been proposed in the device structure. This increases the electron and hole concentrations by ∼2-fold and ∼8-fold, respectively. The 1.2-fold reduction in hole effective potential barrier height improves the hole injection. Also, the 1.5-fold increase in electron effective potential barrier height limits electron spill-off from the active region. The proposed structural-engineering reduces quantum confined stark effect (QCSE) confirmed by the reduction of quantum well slopes. Reducing carrier spill-off and QCSE increases average radiative recombination rate by ∼8-fold. The maximum IQE is improved by ∼44 % and the efficiency droop is also reduced to a promising level of ∼2 % in case of the sample under consideration. Finally, the LOP increases 10-fold, promisingly. Thus, the proposed structure is supposed to be highly potential for improving the UV-C LED performance. The electroluminescence spectra show that despite the gradual differences introduced in the structure, all the samples emit at ∼276 nm with similar full width at half maximum providing a reference for the comparison.

High-Power and High-Efficiency 221 nm AlGaN Far Ultraviolet Laser Diodes

The optical features of far ultraviolet laser diodes (UV LDs) with peak wavelength emission of 221 nm have been numerically analyzed. Global research teams are developing aluminum gallium nitride (AlGaN)-based farUV LDs on Sapphire and AlN substrates as an alternative to Mercury lamps for air-water purification, polymer curing, and bio-medical devices. In this study, the light output power, internal quantum efficiency, stimulated recombination rate curve, and optical gain curve of the compositionally graded p-cladding layer (p-CL) were studied and show significant improvements. Therefore, the optimized structure can reduce the overflow of electrons and increase the injection of holes. This approach proves to be an efficient method for enhancing farUV LDs’ overall performance when compared to the reference structure.

The composited high reflectivity p-type electrodes with patterned ITO for AlGaN-based ultraviolet light emitting diodes

Composited p-type electrodes with high reflectivity have been investigated in AlGaN-based ultraviolet light emitting diodes (UV-LEDs) to improve the light extraction efficiency, which are composed of a patterned ITO layer and an Al reflector. It is verified that the patterned ITO with a thickness of 30 nm can not only well form Ohmic contact with p-GaN capping layer, but also be nearly 90% transparent to ultraviolet light, and thus presenting a reflectivity of 73% at 280 nm when combined with an Al reflector. Further experimental efforts confirm that the performance of the UV-LEDs is dramatically improved with such p-type electrodes. The maximum light output power and wall plug efficiency in the current range of 0–100 mA are severally increased by 49.8% and 54.2% compared to the device with traditional Ni/Au electrodes.

Enhancing the efficiency of InGaN-based micro-LEDs using indium tin oxide p-electrodes

Here, we demonstrate replacing opaque Cr/Pt/Au metal p-electrodes with transparent indium tin oxide (ITO) p-electrodes to increase the light output of InGaN-based micro-light-emitting diodes (micro-LEDs). ITO p-electrodes exhibit high transmittance of ∼ 80% across the visible spectrum and low resistivity, while metal p-electrodes exhibit negligible transmittance and significant absorption. The 20 × 20 µm2 and 50 × 50 µm2 green micro-LED arrays with ITO p-electrodes yield 1.25 and 1.20 times improvement in light output power compared to conventional metal p-electrodes. The on-wafer external quantum efficiency (EQE) of ITO p-electrode devices reach 7.36% and 7.35% at a current density of ≤ 1.6 A/cm2 for 20 × 20 µm2 and 50 × 50 µm2 arrays, while the on-wafer EQE of metal-based ones remain at 5.98% and 6.16%, respectively. This work opens a straightforward yet universal strategy for enhancing micro-LEDs’ performance, as ITO p-electrodes can be seamlessly integrated into red, green, and blue micro-LED configurations.

Enhancement of Light Efficiency of Deep-Ultraviolet Light-Emitting Diodes by Encapsulation with a 3D Photonic Crystal Reflecting Layer.

Recently, UVC LEDs, which emit deep ultraviolet light, have found extensive applications across various fields. This study demonstrates the design and implementation of thin films of three-dimensional photonic crystals (3D PhCs) as reflectors to enhance the light output power (LOP) of UVC LEDs. The 3D PhC reflectors were prepared using the self-assembly of silica nanospheres on a UVC LED lead frame substrate via the evaporation-induced method (side) and the gravitational sedimentation method (bottom), respectively. These PhCs with the (111) crystallographic plane were deposited on the side wall and bottom of the UVC LED lead frame, acting as functional materials to reflect UVC light. The LOP of UVC LEDs with 3D PhC reflectors at a driving current of 100 mA reached 19.6 mW. This represented a 30% enhancement compared to commercial UVC LEDs with Au-plated reflectors, due to the UVC light reflection by the photonic band gaps of 3D PhCs in the (111) crystallographic plane. Furthermore, after aging tests at 60 °C and 60% relative humidity for 1000 h, the relative LOP of UVC LEDs with 3D PhC reflectors decreased by 7%, which is better than that of commercial UVC LEDs. Thus, this study offers potential methods for enhancing the light output efficiency of commercial UVC light-emitting devices.

High Efficiency Flat-Type GaN-Based Light-Emitting Diodes with Multiple Local Breakdown Conductive Channels.

We investigated a flat-type p*-p LED composed of a p*-electrode with a local breakdown conductive channel (LBCC) formed in the p-type electrode region by applying reverse bias. By locally connecting the p*-electrode to the n-type layer via an LBCC, a flat-type LED structure is applied that can replace the n-type electrode without a mesa-etching process. Flat-type p*-p LEDs, devoid of the mesa process, demonstrate outstanding characteristics, boasting comparable light output power to conventional mesa-type n-p LEDs at the same injection current. However, they incur higher operating voltages, attributed to the smaller size of the p* region used as the n-type electrode compared to conventional n-p LEDs. Therefore, despite having comparable external quantum efficiency stemming from similar light output, flat-type p*-p LEDs exhibit diminished wall-plug efficiency (WPE) and voltage efficiency (VE) owing to elevated operating voltages. To address this, our study aimed to mitigate the series resistance of flat-type p*-p LEDs by augmenting the number of LBCCs to enhance the contact area, thereby reducing overall resistance. This structure holds promise for elevating WPE and VE by aligning the operating voltage more closely with that of mesa-type n-p LEDs. Consequently, rectifying the issue of high operating voltages in planar p*-p LEDs enables the creation of efficient LEDs devoid of crystal defects resulting from mesa-etching processes.

Fabrication of high power 1.5 µm wavelength InGaAsP/InP BH lasers having dilute waveguide structure

1.5 µm wavelength high power buried heterojunction (BH) semiconductor lasers having dilute waveguide structure have been fabricated. The optical field is dragged down toward the n side of the device by the dilute waveguide layer, lowering the optical confinement factor of the p doped material and active material, which helps to enlarge the laser output light power. Compared with thick InGaAsP cladding layer, the dilute waveguide material is easy to be grown and has higher thermal conductivity. The slope efficiency of the obtained dilute waveguide BH lasers is notably higher than that of the BH lasers having no dilute waveguide. Our studies show that the dilute waveguide structure is promising for the fabrication of high power BH lasers.

Effect of distributed Bragg reflectors on optoelectronic characteristics of GaN-based flip-chip light-emitting diodes

Distributed Bragg reflectors have been widely utilized in GaN-based flip-chip light-emitting diodes (FCLEDs) owing to their excellent reflection performance. Recently, wide reflected angle DBR (WRA-DBR) has been suggested to enhance the optical characteristics of GaN-based FCLEDs by incorporating multiple sub-DBRs with varying central wavelengths. However, the reflectivity of WRA-DBR decreases at large incident angle from 425 nm to 550 nm, which restricts further optical performance improvement of FCLEDs. Here, we demonstrate a quintuple-stack DBR comprised of five sub-DBRs. The quintuple-stack DBR possesses a high reflectivity (>97.5%) for incident angles below 50° within the blue and green light wavelength ranges. Compared to WRA-DBR, quintuple-stack DBR exhibits a higher reflectivity in wavelength range of 425 nm to 550 nm and thinner multilayer thicknesses. Furthermore, stronger electric field intensities exist in the top facet and sidewalls of FCLED with quintuple-stack DBR, revealing that quintuple-stack DBR is beneficial for enhancing the light extraction efficiency. As a result, the light output power of FCLED with quintuple-stack DBR is ∼3% higher than that of FCLED with WRA-DBR at 750 mA.

Design of Fiber Laser Based on Erbium-ion

Erbium ions (Er3+) exhibit good characteristics of fiber lasers in the 1500-1550 nm band, including three-level systems, high tilt efficiency, and large emission cross sections. This article focuses on studying the spectral characteristics of erbium ions, simulating the power propagation equation of erbium-doped ion fiber lasers, and calculating the pump power threshold and output power. The findings of the simulation indicate that the laser begins to produce 10 W of pump optical power. The laser power hits 34.38 W and the oblique power is determined to be 38.20% as soon as the pump power exceeds 100 W. Experimental results show that when pump light propagates forward, the forward propagation power of the pump light will weaken, the forward propagation power of the signal light will increase, the reverse propagation of the signal light will weaken and the reverse propagation of the pump light will Transmission will also weaken, with directional transmission remaining largely unchanged. This study carried out numerical simulations on the experimental parameters of the fiber laser doped with Er3+and finally obtained the output power of pump light and signal light under these conditions, providing better data support for the preparation of 1500-1550 nm fiber laser doped with erbium ion.

High-reflectivity composite metal substrate for high-power IRLED

Substrate transfer technology is a common way to prepare high-power infrared light emitting diode (IRLED), which seriously affects the photoelectric performance and reliability of LED. In this paper, a preparation technology of LED with composite metal substrate is presented. Based on electroplating and electron beam evaporation, AuGeNi/Au(1)/Au(2)/Cu composite metal substrate with thickness of 70 nm/30 nm/100 nm/45 μm was prepared, and low resistivity of 4.65 × 10−6 Ω⋅cm2 and high reflectance of 91.3 % were obtained. Compared with the original GaAs substrate, the light output power (LOP) of electroluminescence is increased by 89.2 % at the current of 300 mA.

Performance improvement of blue light micro-light emitting diodes (< 20 μm) by neutral beam etching process

In this study, micro-light emitting diodes array (μLEDs) with dimensions of 5 μm and 15 μm chip size were fabricated using Neutral Beam Etching (NBE) processes. Size-dependent issues of μLEDs processed by traditional inductively coupled plasma-reactive ion etching (ICPRIE) were alleviated by NBE technology, which exhibited lower equivalent resistance, turn-on voltage, and Ideality factor as compared with those of μLEDs by ICPRIE. Additionally, higher light output power of μLEDs processed by NBE with both 5 μm and 15 μm resulted in higher EQE 7.6 % and 7.7 % than those of μLEDs processed by ICPRIE. Furthermore, the size effect led to a decrease in EQEmax values of the ICPRIE sample by 0.4 %, but only a 0.1 % decay in NBE. Overall, samples fabricated by the NBE process exhibited superior optoelectronic characteristics. Finally, non-radiative recombination behaviors on the mesa sidewall were verified by cathodoluminescence analysis, showing significant decay in ICPRIE samples but not in NBE samples. These results demonstrated the potential of the NBE process for fabricating small chip sizes blue-light μLEDs required for high-brightness, high-efficiency, and high-resolution μLED displays.