Abstract
Substrate transfer technology is a common way to prepare high-power infrared light emitting diode (IRLED), which seriously affects the photoelectric performance and reliability of LED. In this paper, a preparation technology of LED with composite metal substrate is presented. Based on electroplating and electron beam evaporation, AuGeNi/Au(1)/Au(2)/Cu composite metal substrate with thickness of 70 nm/30 nm/100 nm/45 μm was prepared, and low resistivity of 4.65 × 10−6 Ω⋅cm2 and high reflectance of 91.3 % were obtained. Compared with the original GaAs substrate, the light output power (LOP) of electroluminescence is increased by 89.2 % at the current of 300 mA.
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