Leakage Paths Research Articles

Using Fluid Curtains to Improve Sealing Performance in Turbomachinery Applications

Abstract The results from an investigation into the physics of how fluid curtains can be applied to improve the aerodynamic performance of conventional turbomachinery shaft and rotor seals are described in this paper. Computational fluid dynamics and testing on two experimental facilities are used in the study. In the first part of the work, computational fluid dynamics simulations validated against experimental test data demonstrate the fundamental mechanism by which the presence of the curtain can act to reduce leakage flow through conventional seals. These results are consolidated into a single performance carpet map, showing how the leakage reduction performance and the curtain supply pressure needed to achieve it vary with changes in values of key geometrical parameters. In the second part of the work the effect of swirl in the seal inlet flow, as is often encountered in turbomachinery applications, on the performance of the fluid curtain is investigated experimentally. Test results show that if the swirl momentum in the inlet flow is greater than the momentum of the curtain flow, the performance benefit from applying the curtain is greatly diminished. Overall, the results provide some fundamental design rules for applying fluid curtains to enhance turbomachinery sealing performance for the general type of leakage path geometry (cylindrical channel, 45-deg jet angle, curtain upstream of a conventional seal) and working fluid type and conditions (air, ambient temperature, subsonic leakage channel flow) used in the study.

The Use of an Advanced Intelligent-Responsive Polymer for the Study of Dynamic Water-Carbon Dioxide Alternating Displacement.

Addressing the issue of inadequate temperature tolerance in traditional polymers, in this study, we successfully executed a one-step synthesis of intelligent-responsive polymers which have excellent adaptability in water-gas alternating displacement scenarios. Utilizing the fatty acid method, we produced OANND from oleic acid (OA) and N,N-dimethyl-1,3-propanediamine (NND). Upon testing the average particle size in the aqueous solution both prior and subsequent to CO2 passage, it became evident that OANND assumes the form of a small-molecule particle in the aqueous phase, minimizing damage during formation. Notably, upon CO2 exposure, it promptly organizes into stable micelles with an average size of 88 nm and a relatively uniform particle distribution. This unique characteristic endows it with a rapid CO2 response mechanism and the ability to form a highly resilient gel. In the exploration of viscoelastic fluids, we observed the remarkable behavior of the AONND aqueous solution when CO2/N2 was introduced. This system displayed repeatable transitions between aqueous and gel states, with the highest viscosity peaking at approximately 3895 mPa·s, highlighting its viscosity reversibility and reusability properties. The rheological property results that we obtained indicate that an elongated micellar structure is present in the solution system, with the optimal concentration ratio for its formation determined as 0.8, which is the molar ratio of the OANND-NaOA system. In the sealing performance tests, a 1.0 wt% concentration of the gel system exhibited excellent injectability properties. At 80 °C, this gel effectively reduced the permeability of a sand-filled model to 94.5% of its initial value, effectively sealing potential leakage paths or gas fluxes. This remarkable ability to block leakage paths and reduce seepage capacity highlights the material's superior blocking effect and erosion resistance properties. Furthermore, even at a temperature of 90 °C and an injection pore volume (PV) of 3, this plugging system could reduce the permeability of a high-permeability sand-filled model to over 90% of its initial value.

Enhanced Performance of Ultraviolet AlGaN/GaN Photo‐HEMTs by Optimized Channel Isolation Schemes

AbstractSolar blind ultraviolet (UV) photodetectors utilizing AlGaN/GaN high electron mobility transistor (HEMT) structure offer a very high responsivity, photo‐to‐dark current ratio (PDCR), and detectivity. However, the performance of conventional mesa‐isolated photo‐HEMT is limited due to current leakage paths through the side wall and AlGaN barrier. In this work, apart from conventional mesa‐type isolation, ion implantation and metal‐insulator‐semiconductor (MIS) schemes are adopted to isolate the channels of AlGaN/GaN photo‐HEMTs. A significant reduction in dark current is achieved for MIS photo‐HEMT of around four and three orders of magnitude as compared to those of conventional mesa‐ and ion‐implanted photo‐HEMTs, respectively. Moreover, the responsivity and PDCR of MIS photo‐HEMT are around three and four orders of magnitude higher than those of conventional mesa‐isolated photo‐HEMT. Subsequently, MIS photo‐HEMT on Si substrate has achieved a very high detectivity of 4.63 × 1016 Jones at the UV incidence wavelength of 360 nm. The results presented in this work establish the advantages of MIS photo‐HEMT over other types of photo‐HEMTs. In addition, compatibility with GaN device fabrication technology and significantly enhanced optoelectronic performance suggest AlGaN/GaN MIS photo‐HEMTs as a promising candidate for a variety of advanced UV sensing applications.

Study on the characteristics of self-electric field of adjacent multiple leakage paths embankment dams and dikes under variable water levels

ABSTRACT The mastery of the distribution characteristics of the self-electric field of leaking embankment dams and dikes will impose positive effects on both detect and monitor leakage paths by self-potential method. We use numerical simulation and model experiment to investigate the self-electric field of embankment dams and dikes with adjacent multiple leakage paths under fluctuating water levels. The distribution characteristics of self-electric field in embankment dams and dikes with leakage paths at different spatial positions are researched by numerical simulation. The variation of self-potential data of horizontal and vertical survey lines on the surface are analysed. We establish a physical model and confirm that the numerical simulation results are reliable. The results show that as the water-level falls and rises, the self-potential of embankment dams and dikes correspondingly reduces and intensifies. During the water level’s descent, a low self-potential region appears above the leakage path’s exit, and the magnitude of the self-potential of this region is proportional to the leakage amount. The number and features of the spatial distribution of leakage paths within the dam are understood based on the peak self-potential of the vertical and horizontal survey lines. The findings will further promote the application of self-potential method.

Modelling the Impregnation of a Pressure-Tight Casting

AbstractPressure tightness is important for many die-cast aluminium castings, but the interconnected porosity formed in the aluminium alloy high-pressure die castings (HPDC) can form a network connecting several surfaces of the casting, especially as a result of machining after casting. The resulting potential leakage path can be imagined as a series of discontinuities varying in size over wide limits, where voids of different volumes are connected by channels of smaller cross section. Although vacuum impregnation is often used to ensure pressure-tightness is a robust technology, cavity systems through the casting can still cause leakage after impregnation. This study addresses the issues of the impregnation of discontinuities with a complex geometry. The elementary part of a complex cavity geometry consists of a cavity and a capillary channel. We estimated the limited permeability of the capillary section using a mathematical model based on the Hagen–Poiseuille equation. The calculation results prove that the degree of filling of the cavity with a capillary section is basically a function of the geometrical characteristics of the cavity, primarily the radius of the capillary. If the cavity system also contains a section with a diameter of less than 28 μm, impregnation does not necessarily ensure the gas tightness of the casting. Depending on the radius of the capillary, the impregnation of a cavity of a given volume and connected to the surface through a capillary section of a given length can produce three different results. Above a certain capillary radius, filling is complete, below a certain capillary radius only the capillary itself will contain resin, and between the two limit values, the partial impregnation of the cavity is expected but the capillary section is not filled.

Drifts effect on the divertor W leakage mechanisms under different dissipative divertor conditions of EAST

A new drift module has been developed in the DIVIMP code, enabling two-dimensional simulations of tungsten (W) transport in the edge plasma with full drifts included. By using the SOLPS-DIVIMP code package, the impact of drifts on W transport and screening has been investigated for various levels of dissipative divertor conditions and different divertor geometric configurations in EAST. Simulation results reveal that E⃗×B⃗ drifts can enhance the W leakage by more than one order of magnitude. Under the favorable Bt direction, W erosion mainly occurs on the outer divertor target, making the W leakage from the outer divertor region the dominator. A leakage path from the near-scrape-off layer (SOL) region is revealed by the modeling results. In the leakage path, both the ion temperature gradient force and the reversed poloidal E⃗×B⃗ drift are pointing upstream. With the radial E⃗×B⃗ drift pushing W ions from the well-screened far-SOL region to the near-SOL region, the leakage from the near-SOL region becomes significant. As the divertor condition varies from the low-recycling regime to the deep detachment regime, the decrease of the ion temperature gradient velocity and poloidal E⃗×B⃗ drift velocity narrows the width of the near-SOL leakage tunnel and thus enhances W screening. While under the unfavorable Bt , W erosion and leakage from the inner divertor target matters, the leakage mechanism especially the leakage path from the near-SOL region is similar as the favorable Bt cases. Furthermore, the effect of different divertor geometries on the W screening has been investigated. The configuration with the outer strike point (OSP) on the horizontal divertor plate is proved to narrow the near-SOL leakage tunnel, and thus the unreversed poloidal E⃗×B⃗ drift pointing to the divertor target dominates and helps to enhance the divertor W screening. For the same D 2 puffing rate, the W leakage ability of cases with the OSP on the horizontal target can be more than 10 times weaker than the cases with the OSP on the vertical target, especially when the divertor is detached.

A fast in silico model for preoperative risk assessment of paravalvular leakage.

In silico simulations can be used to evaluate and optimize the safety, quality, efficacy and applicability of medical devices. Furthermore, in silico modeling is a powerful tool in therapy planning to optimally tailor treatment for each patient. For this purpose, a workflow to perform fast preoperative risk assessment of paravalvular leakage(PVL) after transcatheter aortic valve replacement (TAVR) is presented in this paper. To this end, a novel, efficient method is introduced to calculate the regurgitant volume in a simplified, but sufficiently accurate manner. A proof of concept of the method is obtained by comparison of the calculated results with results obtained from in vitro experiments. Furthermore, computational fluid dynamics (CFD) simulations are used to validate more complex stenosis scenarios. Comparing the simplified leakage model to CFD simulations reveals its potential for procedure planning and qualitative preoperative risk assessment of PVL. Finally, a 3D device deployment model and the efficient leakage model are combined to showcase the application of the presented leakage model, by studying the effect of stent size and the degree of stenosis on the regurgitant volume. The presented leakage model is also used to visualize the leakage path. To generalize the leakage model to a wide range of clinical applications, further validation on a large cohort of patients is needed to validate the accuracy of the model's prediction under various patient-specific conditions.

Design and analysis of gate all around stacked nanosheet-DRAM for future technology node

This paper reports a stacked Dynamic random-access transistor (DRAM) memory structure that is based on gate all-around nanosheet access transistor. A TCAD study is done to compare nanosheet DRAM and conventional saddle fin recessed channel access transistor (SRCAT) in terms of DRAM electrical characteristics and its row hammer-induced leakage. The nanosheet DRAM shows superior characteristics in terms of current driving capability, speed, and refresh than SRCAT. The nanosheet DRAM also shows significantly lower hammer-induced failure as compared to SRCAT because the original leakage path from the cell to the neighboring cell gets blocked due to the nanosheet device structure. We also investigate the effect of spacer length on nanosheet DRAM characteristics and show that extended spacer length is favorable for having better DRAM characteristics due to the floating body effect. Our study demonstrates the potential, and advantages of nanosheet DRAM architecture compared to the conventional SRCAT DRAM.

Using selective-area growth and selective-area etching on (−102) β-Ga2O3 substrates to fabricate plasma-damage-free vertical fins and trenches

We have demonstrated selective-area growth and selective-area etching on SiO2-masked (−102) β-Ga2O3 substrates using a HCl-based halide-vapor-phase epitaxy system that is capable of performing both growth and gas etching without plasma excitation. Since the surface of the (−102) substrate is perpendicular to the (100) plane, which has the lowest surface energy, we were able to use both methods to fabricate plasma-damage-free fins and trenches with (100)-faceted vertical sidewalls on windows striped along the [010] direction with high processing accuracy. Furthermore, since the [010] window direction is aligned parallel to the majority of dislocations and line-shaped voids in the substrate—which extend along the [010] direction and could potentially act as leakage paths—such crystal defects are unlikely to appear on the surfaces of the resulting fins and trenches. We believe that these selective-area growth/etching techniques can greatly accelerate research on, and the development of, β-Ga2O3-based vertical/lateral devices with fins or trenches.

On the insignificance of dislocations in reverse bias degradation of lateral GaN-on-Si devices

The role of threading dislocations in the intrinsic degradation of lateral GaN devices during high reverse bias stress tests (RBSTs) is largely unknown. We now present the results on lateral p-GaN/AlGaN/2DEG heterojunctions with a width of 200 μm in GaN-on-Si. A time-dependent permanent degradation of the heterojunction under high reverse bias and elevated temperatures can be observed, ultimately leading to a hard breakdown and device destruction. By using an integrated series p-GaN resistor, the device is protected from destruction and, consequently, the influence of dislocations on the degradation mechanism could be studied. Localization by emission microscopy could show that the transient current increase during a RBST is the result of the creation of a limited amount of highly localized leakage paths along the whole device width. We could establish a 1:1 correlation of leakage sites with a structural material degradation within the AlGaN barrier for nine individual positions on two different devices by planar transmission electron microscopy analysis. To unambiguously show whether dislocations in GaN-on-Si even should be considered a potential trigger for the RBST degradation in lateral heterojunctions, a combined planar and cross-sectional lamella approach was used for the first time for larger devices. This enabled the visualization of the three-dimensional propagation path of the dislocations close to the degradation sites. It was found that there is no statistically significant link between the material degradation and pre-existing dislocations. Our findings offer new insights into the GaN-on-Si material system, upon which upcoming power technologies are built upon.

Experimental and numerical study on the pushout shear strength of conventional and expanding cement–casing sections for well integrity

A good bond between the well casing and cement is often considered essential for avoiding generating microannulus leakage paths along the interface between the two materials. A common method for characterizing the casing-to-cement bond is to perform laboratory pushout tests. This study comprehensively investigates pushout tests conducted on conventional class G and well cement samples containing a 3% expanding additive. Firstly, experimental pushout tests were performed on various full-scale diameter cement samples, allowing for an accurate evaluation of their bond strength. Secondly, a finite element (FE) model incorporating cohesive-based surface behavior and a friction formulation is proposed to simulate the behavior of cement sections under pushout loading conditions. The results from the FE model were compared with the experimental responses, demonstrating good agreement in simulating the pushout behavior of conventional class G cement and expanding cement samples. Notably, the significant findings of this article fill a critical gap in the literature. Few experimental tests and elastoplastic numerical models have been carried out in the literature to comprehensively capture the damage evolution and predict the pushout shear strength in cement–casing interactions in P&A scenarios.

Reliable ferroelectricity in sol–gel‐derived BiFeO3 thin films below 200 nm

AbstractTo evaluate optimizing processing conditions for bismuth ferrite BiFeO3 (BFO) thin films with thicknesses below 200 nm on Pt(111)/Ti/SiO2/Si substrates. The impact of the amorphous components, as well as defects and elemental composition changes and microstructure evolution (i.e., grain size) as regulated by the treatment temperatures (475–600°C) on the ferroelectric and dielectric properties are investigated. The current work shows that with the smallest grain size and the least defects amount achieved in the film annealed at 550°C, the conductivity is compressed greatly. Such a temperature will also allow adequate ferroelectric switching by reducing the amorphous components, which remain the majority below 500°C and thus reinforce the polarization switching. The leakage path is deduced via crystallized grains in BFO thin films instead of the remaining including grain boundaries and amorphous components. The best remanent polarization of ∼60.4 μC·cm‐2 from PUND measurements excluding the leakage contribution at 500 kV·cm−1 and an excellent fatigue property of 106 cycles are achieved. In addition, broadened fabrication temperatures for amorphous‐protected polycrystalline BFO thin films from 525 to 575°C, exhibiting superior ferroelectricity than most previously reported BFO thin films below 200 nm, either derived by chemical or physical methods. Ultimately, it is suggested that for leaky ferroelectrics such as BFO, optimal annealing temperature should balance the amorphous components by reducing the annealing temperature while maintaining adequate crystallization for ferroelectric switching.

A Novel Series Magnetic Circuit Variable Flux Memory Machine With Self-Flux Leakage Paths

Variable flux memory machine (VFMM) applying low coercivity force (LCF) permanent magnets (PMs) is suitable for electric vehicles (EVs) since its air-gap flux can be adjusted easily. In this article, a novel series magnetic circuit VFMM with self-flux leakage paths (SMC-VFMM-SLP) is proposed, in which the design concept of self-flux leakage is introduced to enhance air-gap flux regulation (FR) range and keep high torque density simultaneously. The self-flux leakage paths can control the self-flux leakages based on the magnetization states (MSs) of the employed LCF PMs. The machine can thus keep a high torque density under the positive MS and achieve excellent flux-weakening ability under the negative MS when it is loaded. First, the topology and the FR range expansion principle of SMC-VFMM-SLP are interpreted in detail, in which the magnetic circuits under different MSs are qualitatively analyzed. The electromagnetic performance of SMC-VFMM-SLP under the positive and negative MSs is subsequently investigated by the finite element method, including no-load characteristics, torque abilities, and efficiency maps. Finally, an SMC-VFMM-SLP prototype is manufactured and measured, which confirms the feasibility of the proposed self-flux leakage paths design for the air-gap FR range improvement.

Comprehensive Comparison of MOCVD- and LPCVD-SiNx Surface Passivation for AlGaN/GaN HEMTs for 5G RF Applications.

Passivation is commonly used to suppress current collapse in AlGaN/GaN HEMTs. However, the conventional PECV-fabricated SiNx passivation layer is incompatible with the latest process, like the "passivation-prior-to-ohmic" method. Research attention has therefore turned to high-temperature passivation schemes. In this paper, we systematically investigated the differences between the SiNx/GaN interface of two high-temperature passivation schemes, MOCVD-SiNx and LPCVD-SiNx, and investigated their effects on the ohmic contact mechanism. By characterizing the device interface using TEM, we reveal that during the process of MOCVD-SiNx, etching damage and Si diffuses into the semiconductor to form a leakage path and reduce the breakdown voltage of the AlGaN/GaN HEMTs. Moreover, N enrichment at the edge of the ohmic region of the LPCVD-SiNx device indicates that the device is more favorable for TiN formation, thus reducing the ohmic contact resistance, which is beneficial to improving the PAE of the device. Through the CW load-pull test with drain voltage VDS = 20V, LPCVD-SiNx devices obtain a high PAE of 66.35%, which is about 6% higher than MOCVD-SiNx devices. This excellent result indicates that the prospect of LPCVD-SiNx passivation devices used in 5G small terminals will be attractive.

Refined Analysis of Leakage Current in SiC Power Metal Oxide Semiconductor Field Effect Transistors after Heavy Ion Irradiation

A leakage current is the most critical parameter to characterize heavy ion radiation damage in SiC MOSFETs. An accurate and refined analysis of the source and generation process of a leakage current is the key to revealing the failure mechanism. Therefore, this article finely tests the online and post-irradiation leakage changes and leakage pathways of SiC MOSFETs caused by heavy ion irradiation, analyzes the damaged location of the device in reverse, and discusses the mechanism of leakage generation. The experimental results further confirm that an increase in the leakage current of a device during heavy ion irradiation is positively correlated with the applied voltage of the drain, but the leakage path is not direct from the drain to the source. The experimental analysis of the source of the leakage current of the device after irradiation indicates that there is also a leakage current path between the device gate and source. The research results suggest that the experimental sample is more prone to a single-event gate rupture effect under this heavy ion radiation condition. The gate breakdown mainly occurs in the gate oxide layer at the neck region. This research can provide a theoretical basis for the radiation resistance reinforcement of SiC power devices.

BCH modelling studies on biocementation process in mitigating leaks from a CO2 sequestrated aquifer

BCH modelling studies on biocementation process in mitigating leaks from a CO2 sequestrated aquifer

Integration of subsurface dynamic coupled modelling and monitoring technologies for CCS: examples from existing projects


 Introduction
 Host rock injectivity and storage complex integrity (containment) for CO2 sequestration are critical factors to ensure that capacity targets are met while preventing CO2 leakage over time and confirm permanent storage.
 
 Figure 1 sketches the typical CO2 injectivity problem. Evaluating injectivity, capacity and containment requires assessing key phenomena such as: seal and faults capillary controls, non-isothermal reactive flow, geomechanical failure induced in the seal, along faults and/or fractures and in the vicinity of the wells. Additional analyses will also be needed to evaluate the completion integrity of the wells (injectors, monitoring and existing wells) under variable load conditions in terms of pressure, temperature and chemistry. The listed phenomena, and their likely effects, are analysed by means of dynamic coupled modelling, considering co-existing (geo)mechanical and dynamic flow simulations. Therefore, coupled modelling improves the risk analysis allowing to evaluate the Thermo-Hydro-Mechanical-Chemical (THMC) processes associated to CO2 injection.
 Analyses
 In this presentation we will provide some examples of integration of subsurface dynamic coupled modelling and monitoring technologies for CCS. Some of these examples are derived from existing projects.
 
 Injectivity impairment during CO2 injection is a well-known issue often observed at well and field scale (e.g. Snøhvit, Ketzin, Decatur projects [1], [2]). Loss of injectivity is governed by the interactions between CO2-brine phase behavior, CO2-solid phase (rock) behavior, salt precipitation, multi-phase flow. Characterizing zonal injectivity and developing mitigation strategies will be therefore important for project success. Figure 2 (left and center) shows an example of time-lapse CO2 saturation evolution during injection and consecutive non-isothermal processes associated to Joule-Thompson effect (H2O vaporization, cooling and induced salt precipitation due to dry-out). Temperature and pressure changes can lead to near wellbore failure (thermal and pressure induced fracturing) impacting injection performance due to near wellbore fracturing and consecutive permeability changes (Figure 2 right).
 To close the evaluation loop, the integrated subsurface characterization workflow is completed by measurements to image the subsurface before and after CO2 injection. This provides essential insights into the storage complex quality before injection and effective monitoring during injection and permanent storage, tracking the position of the CO2 pressure and concentration plumes, assessing surface heave, and detecting any risks or potential leakage paths. There is a tight link between subsurface dynamic coupled modelling and existing monitoring technologies. This link expands the well-known MMV (Measurement, Monitoring and Verification) process into a more integrated 3MV process (Modelling, Measurement, Monitoring and Verification), opening to the definition of a subsurface digital twin supporting successful CCS operations. We will briefly introduce methods and technologies enabling the subsurface dynamic modelling and monitoring of CO2 injection and storage. Seismic and borehole petrophysical and geophysical measurements for initial subsurface characterization and consecutive monitoring will be described.

Mobile ions entering the IGBT gate oxide - electrical detection and failure localization by lock-in thermography

Small mobile ions, especially sodium and potassium are known to have the ability to infiltrate and move within gate oxide layers of silicon MOS devices. The ion transport in silicon oxide is either a temperature-driven, isotropic diffusion process, or an electrical ion current in presence of an electric field. Therefore, the high temperature gate bias test with negative polarity provides ideal conditions to identify the presence of mobile ions in the gate oxide of IGBT and MOSFET. Mobile ions in sufficient concentration can severely affect the electric characteristics, such as the turn-on and turn-off behavior of the MOS channel, by creating a shift in the gate threshold voltage or excessive sub-threshold currents. This paper shows several examples of how mobile ions can get into the gate oxide, e.g., via cracks in top side metallization, or by corrosive attack of cap layers. All these different failure modes develop the same electrical failure signature after temperature and/or gate bias stress. During the investigations on mobile ions, a special lock-in thermography method was developed that allows to localize the defect sites in the semiconductor by taking advantage of exclusive excitation of MOS cells affected by mobile ion contamination. Finally, after defect localization, further analytical methods can be applied to identify the exact nature of the access path to the gate oxide. Based on the test and analytical routine described above, a special test method was developed that allows to evaluate the permeability of the semiconductor chip top side structures towards mobile ions and to check for weak spots and potential leakage paths.

STUDY ON WATER LEAKAGE DETECTION AND TREATMENT IN METRO STATION STRUCTURES

Introduction: Considering the condition of water leakage at metro stations and the availability of various leakage detection methods, studying combination detection methods suitable for various working conditions can serve as the basis for leakage treatment. Purpose of the study: We aimed to use a number of leakage detection methods that can complement and verify each other in terms of accuracy and depth of detection, improve the identification of defects, and ensure precise grouting. Methods: In the course of the study, model tests and field application of detection methods were used. Results: Using an infrared detector and a water leakage detection instrument, it is possible to identify leakage points on the surface of both the non-decorative layer and the wet-sticking decorative layer more accurately. By combining a ground penetrating radar and an ultrasonic cross-section scanner, it is possible to better identify internal structural defects within both the non-decorative layer and the wet-sticking decorative layer. If the decorative layer is not dismantled, an air-coupled radar based on an industrial endoscope and a specially developed camera system can effectively detect the leakage path in concrete as well as surface leakage points.

Finite integral transform solution of unsteady heat conduction applied to thermal plug and abandonment of oil wells

The end of the production phase of an offshore oil well represents a remarkable shift in field operations from extraction to plug and abandonment. The international normative requirements for permanent well plugging demand a series of technical maneuvers to avoid structural failures and the formation of leakage paths during or after the sealing process. The current closure technique requires a complete or partial removal of the production column before the borehole may be plugged with Portland cement. However, the tube removal process frequently results in an increase in the involved time and costs. Hence, the current research was aimed at investigating the prototype approach of Thermal Plug and Abandonment of wells by applying a thermite heat emitter device to melt the production column's steel. Here, the Finite Integral Transform analytical method was computationally implemented through an inhouse code to calculate the resultant transient temperature fields at the multilayered medium. The results were compared to a Finite Volume Method numerical solution to enhance the study’s reliability. The research outcomes provided insight that even in the event of a partial thermite reaction failure and a highly nonuniform heat pattern, the resultant molten azimuthal length of the production column may still allow enough room for cement flow. It was estimated through the temperatures achieved that the heat emitter is capable of melting at least nearly three-quarters of the production tube’s azimuthal length, thus eliminating the need for its removal and significantly reducing the sealing process operational costs.