Leakage Current Research Articles

3.3 kV-class NiO/β-Ga2O3 heterojunction diode and its off-state leakage mechanism

This Letter demonstrates a high-performance 3.3 kV-class β-Ga2O3 vertical heterojunction diode (HJD) along with an investigation into its off-state leakage mechanism. The vertical β-Ga2O3 HJD with field plate assisted deep mesa (FPDM) termination was fabricated using a self-aligned technique to etch the deep mesa to a depth of 9 μm, thereby reducing electric field crowding at the anode edge. In addition, a thick dielectric is deposited to fill the trench, facilitating the utilization of a field plate to further reduce the electric field at the anode edge. TCAD (Technology Computer Aided Design) simulations show significant suppression of electric field crowding at the anode edge. The fabricated HJD exhibits a high current swing of ∼1010 over a temperature range from 25 °C to 175 °C. The specific on-resistance (Ron,sp) is extracted to be 3.9 mΩ cm2, and the breakdown voltage is 3.42 kV with the FPDM termination. These conduction and blocking characteristics lead to a high power figure of merit of 3 GW/cm2, which is one of the highest among multi-kilovolt β-Ga2O3 diodes. Furthermore, the off-state current leakage mechanism of the HJD under a reverse bias up to 2000 V was investigated. The fitted results reveal that the leakage current is primarily dominated by Poole–Frenkel (PF) emission, with the trap level of PF extracted to be 0.36 eV below the conduction band of NiO.

Charge trapping layer enabled high-performance E-mode GaN HEMTs and monolithic integration GaN inverters

In this work, high threshold voltage and breakdown voltage E-mode GaN HEMTs using an Al:HfOx-based charge trapping layer (CTL) are presented. The developed GaN HEMTs exhibit a wide threshold modulation range of ΔVTH ∼ 17.8 V, which enables the achievement of enhancement-mode (E-mode) operation after initialization process owing to the high charge storage capacity of the Al:HfOx layer. The E-mode GaN HEMTs exhibit a high positive VTH of 8.4 V, a high IDS,max of 466 mA/mm, a low RON of 10.49 Ω mm, and a high on/off ratio of ∼109. Moreover, the off-state breakdown voltage reaches up to 1100 V, which is primarily attributed to in situ O3 pretreatment effectively suppressing and blocking leakage current. Furthermore, thanks to the VTH of GaN HEMTs being tunable by initialization voltage using the proposed CTL scheme, we prove that the direct-coupled FET logic-integrated GaN inverters can operate under a variety of conditions (β = 10–40 and VDD = 3–15 V) with commendable output swing and noise margins. These results present a promising approach toward realizing the monolithic integration of GaN devices for power IC applications.

Enhanced energy storage performance in Ag(Nb,Ta)O3 films via interface engineering

Dielectric capacitors with ultrahigh power density and ultra-fast charge/discharge rate are highly desired in pulse power fields. Environmental-friendly AgNbO3 family have been actively studied for its large polarization and antiferroelectric nature, which greatly boost the electric energy storage performance. However, high-quality AgNbO3-based films are difficult to fabricate, leading to a low breakdown field Eb (<1.2 MV/cm) and consequently arising inferior energy storage performance. In this work, we propose an interface engineering strategy to mitigate the breakdown field issue. A Ag(Nb,Ta)O3/BaTiO3 bilayer film is proposed, where the BaTiO3 layer acts as a p-type semiconductor while Ag(Nb,Ta)O3 layer is n-type, together with the n-type LaNiO3 buffer layer on the substrate, forming an n-p-n heterostructure. The n-p-n heterostructure elevates the potential barriers for charge transport, greatly reducing the leakage current. An extremely large breakdown field Eb∼4.3 MV/cm is achieved, being the highest value up to date in the niobate system. A high recoverable energy density Wrec∼62.3 J/cm3 and a decent efficiency η∼72.3% are obtained, much superior to that of the Ag(Nb,Ta)O3 monolayer film (Wrec∼46.4 J/cm3 and η∼80.3% at Eb∼3.3 MV/cm). Our results indicate that interface engineering is an effective method to boost energy storage performance of dielectric film capacitors.

Leakage detection applied to the Da Hedong Reservoir dam (China) based on the flow-field fitting method

Detecting leakage in concrete gravity dams presents a formidable challenge. The flow-field fitting (FFF) method is used to identify leaks in China’s Da Hedong Reservoir dam. We develop vertical- and horizontal-gradient approaches based on the transmitted signal electrical field. A plastic frame is developed to allow the probe to measure horizontal gradients. We determine the exact location of leaks at the reservoir’s bottom and upstream face, respectively, assuming that current leakages are located in hydraulic leakage zones. Numerical experiments and water pressure tests reveal that the conductive silt layer beneath the reservoir can lower the response of the potential values at the leakage inlet, and the effect of the silt layer should be considered and not ignored when interpreting measured data. In addition, with regard to the principle of superposition, the contribution associated with metal pipes in the dam body can be roughly determined by subtracting it from the original potential field data, thereby aiding in locating leaks around the metal pipes. In addition, the FFF measurements from the reservoir’s bottom also confirm the position of existing faults in the substratum at the reservoir site. Last, the results of the FFF method are tested against supporting evidence, such as ground penetrating radar and water pressure tests. In conclusion, these independent data confirm the effectiveness of the FFF method for leakage localization in the concrete gravity dam.

Effect of rapid thermal annealing on DC performance of Mg0.30Zn0.70O/Cd0.15Zn0.85O MOSHFET

This study focuses on a cost-effective method for fabrication of a metal oxide semiconductor-heterostructure field effect transistor (MOSHFET) based on MgZnO/CdZnO (MCO) using dual ion beam sputtering (DIBS), in contrast to the more expensive epitaxial growth system. The MOSHFETs developed in this research exhibit notable characteristics, such as a substantial two-dimensional electron gas (2DEG) transconductance (∼2.6 mS), a high ION/IOFF response ratio in the order of 108, and minimal gate leakage current. Furthermore, we explore the impact of rapid thermal annealing (RTA) on the drain current at various temperatures (600 °C and 800 °C). The results indicate a fourfold improvement in drain current compared to unannealed conditions, primarily attributed to reduced contact resistance and no degradation in term of MgZnO/CdZnO structure. Additionally, an analysis of post-RTA treatment under a nitrogen (N2) atmosphere on gate leakage current is presented. The investigation spans temperatures ranging from 400 °C to 800 °C, revealing that above 600 °C (gate leakage at 400 °C–600 °C is around ∼10−9 A), gate leakage in HFET is augmented by one order of magnitude (∼10−8 A) due to a phase change in the dielectric. These findings underscore the feasibility of DIBS-grown MCO MOSHFETs as an economical solution for the mass production of switching devices and sensors.

Failure behavior of tantalum electrolytic capacitors under extreme dynamic impact: Mechanical–electrical model and microscale characterization

Tantalum electrolytic capacitors have performance advantages of long life, high temperature stability, and high energy storage capacity and are essential micro-energy storage devices in many pieces of military mechatronic equipment, including penetration weapons. The latter are high-value ammunition used to strike strategic targets, and precision in their blast point is ensured through the use of penetration fuzes as control systems. However, the extreme dynamic impact that occurs during penetration causes a surge in the leakage current of tantalum capacitors, resulting in a loss of ignition energy, which can lead to ammunition half-burst or even sometimes misfire. To address the urgent need for a reliable design of tantalum capacitor for penetration fuzes, in this study, the maximum acceptable leakage current of a tantalum capacitor during impact is calculated, and two different types of tantalum capacitors are tested using a machete hammer. It is found that the leakage current of tantalum capacitors increases sharply under extreme impact, causing functional failure. Considering the piezoresistive effect of the tantalum capacitor dielectric and the changes in the contact area between the dielectric and the negative electrode under pressure, a force–electric simulation model at the microscale is established in COMSOL software. The simulation results align favorably with the experimental results, and it is anticipated that the leakage current of a tantalum capacitor will experience exponential growth with increasing pressure, ultimately culminating in complete failure according to this model. Finally, the morphological changes in tantalum capacitor sintered cells both without pressure and under pressure are characterized by electron microscopy. Broken particles of Ta–Ta2O5 sintered molecular clusters are observed under pressure, together with cracks in the MnO2 negative base, proving that large stresses and strains are generated at the micrometer scale.

A 1.6 kV Ga2O3 Schottky Barrier Diode with a Low Reverse Current of 1.2 × 10-5 A/cm2 Enabled by Field Plates and N Ion-Implantation Edge Termination.

In this work, by employing field plate (FP) and N ion-implantation edge termination (NIET) structure, the electrical performance of the β-Ga2O3 Schottky barrier diode (SBD) was greatly improved. Ten samples of vertical SBDs were fabricated to investigate the influence of the relative positions of field plates (FPs) and ion implantation on the device performance. The device with the FP of 15 μm and the ion implantation at the edge of the Schottky electrode exhibited a breakdown voltage (Vbr) of 1616 V, a specific on-resistance (Ron,sp) of 5.11 mΩ·cm2, a power figure of merit (PFOM) of 0.511 GW/cm2, and a reverse current density of 1.2 × 10-5 A/cm2 @ -1000 V. Compared to the control device, although the Ron,sp increased by 1 mΩ·cm2, the Vbr of the device increased by 183% and the PFOM increased by 546.8%. Moreover, the reverse leakage current of the device with the FP and NIET structure decreased by three orders of magnitude. The TCAD simulation revealed that the peak electric field at the interface decreased from 7 MV/cm @ -500 V to 4.18 MV/cm @ -1000 V. These results demonstrate the great potential for the β-Ga2O3 SBD with a FP and NIET structure in power electronic applications.

Stability Study of Synthetic Diamond Using a Thermally Controlled Biological Environment: Application towards Long-Lasting Neural Prostheses.

This paper demonstrates, for the first time, the stability of synthetic diamond as a passive layer within neural implants. Leveraging the exceptional biocompatibility of intrinsic nanocrystalline diamond, a comprehensive review of material aging analysis in the context of in-vivo implants is provided. This work is based on electric impedance monitoring through the formulation of an analytical model that scrutinizes essential parameters such as the deposited metal resistivity, insulation between conductors, changes in electrode geometry, and leakage currents. The evolution of these parameters takes place over an equivalent period of approximately 10 years. The analytical model, focusing on a fractional capacitor, provides nuanced insights into the surface conductivity variation. A comparative study is performed between a classical polymer material (SU8) and synthetic diamond. Samples subjected to dynamic impedance analysis reveal distinctive patterns over time, characterized by their physical degradation. The results highlight the very high stability of diamond, suggesting promise for the electrode's enduring viability. To support this analysis, microscopic and optical measurements conclude the paper and confirm the high stability of diamond and its strong potential as a material for neural implants with long-life use.

Topology derivation and control method of high‐reliability buck‐boost double‐grounded transformerless three‐phase inverters

SummaryAs the traditional transformerless three‐phase (TTP) inverters have the shoot‐through and common mode leakage current (CMLC) problems, as well as not being able to realize the buck‐boost conversion, topology derivation and control method of high‐reliability buck‐boost double‐grounded TTP inverters are proposed. These topologies consist of two‐port or three‐port converters with boost capability and three dual‐buck inverters. The two‐port or three‐port converters with boost capability provide the positive and negative bus voltages for the three dual‐buck inverters, realizing the boost conversion. The dual‐buck inverters address the shoot‐through problem. The double‐grounded structure is used to solve the CMLC problem. Dead time between switches is not needed, which reduces the complexity of the control system. Detailed topology derivation of the dual‐buck double grounded TTP inverters with boost capability is given. The operating principle, parameters design of the filters, and stability analysis of this inverter are analyzed in detail. Loss analysis of the inverter is given. The simulation and experimental results of a 750‐W TTP inverter are used to verify the theoretical analysis.

Improvements in Resistive and Capacitive Switching Behaviors in Ga2O3 Memristors via High-Temperature Annealing Process.

This study investigates the effect of a high-temperature annealing process on the characteristics and performance of a memristor based on a Ag/Ga2O3/Pt structure. Through X-ray diffraction analysis, successful phase conversion from amorphous Ga2O3 to β-Ga2O3 is confirmed, attributed to an increase in grain size and recrystallization induced by annealing. X-ray photoelectron spectroscopy analysis revealed a higher oxygen vacancy in annealed Ga2O3 thin films, which is crucial for conductive filament formation and charge transport in memristors. Films with abundant oxygen vacancies exhibit decreased set voltages and increased capacitance in a low-resistive state, enabling easy capacitance control depending on channel presence. In addition, an excellent memory device with a high on/off ratio can be implemented due to the reduction of leakage current due to recrystallization. Therefore, it is possible to manufacture a thin film suitable for a memristor by increasing the oxygen vacancy in the Ga2O3 film while improving the overall crystallinity through the annealing process. This study highlights the significance of annealing in modulating capacitance and high-resistive/low-resistive state properties of Ga2O3 memristors, contributing to optimizing device design and performance. This study underscores the significance of high-temperature annealing in improving the channel-switching characteristics of Ga2O3-based memristors, which is crucial for the development of low-power, high-efficiency memory device.

Exploring tungsten-oxygen vacancy synergy: Impact on leakage characteristics in Hf0.5Zr0.5O2 ferroelectric thin films

The recent discovery of ferroelectric properties in HfO2 has sparked significant interest in the fields of nonvolatile memory and neuromorphic computing. Yet, as device scaling approaches sub-nanometer dimensions, leakage currents present a formidable challenge. While tungsten (W) electrodes are favored over traditional TiN electrodes for their superior strain and interface engineering capabilities, they are significantly hampered by leakage issues. In this study, we elucidate a positive feedback mechanism attributable to W electrodes that exacerbates oxygen vacancy defects, as evidenced by density functional theory computations. Specifically, intrinsic oxygen vacancies facilitate the diffusion of W, which, in turn, lowers the formation energy of additional oxygen vacancies. This cascade effect introduces extra defect energy levels, thereby compromising the leakage characteristics of the device. We introduce a pre-annealing method to impede W diffusion, diminishing oxygen vacancy concentration by 5%. This reduction significantly curtails leakage currents by an order of magnitude. Our findings provide a foundational understanding for developing effective leakage suppression strategies in ferroelectric devices.

Research on the Asymmetric Phenomenon of Voltage Polarity Based on Dielectric Wetting.

The present research investigated the voltage polarity asymmetry phenomenon based on dielectric wetting. In an ITO-hydrophobic layer-droplet setup, three reagents with different pH values (3.96, 7.0, and 10.18), two types of hydrophobic materials (AF1601 and 6%T6), and two different thicknesses (340 nm and 2.5 μm) of each material were systematically investigated. The results show that the thickness of the hydrophobic dielectric layer and the pH of the droplets had a significant impact on the droplet contact angle variation with the voltage. The contact angle on the thick hydrophobic dielectric layer followed the Lippmann-Young equation as the voltage changed. The angle of the thin hydrophobic dielectric layer was affected by its own properties and the type of droplet, which led to the occurrence of voltage polarity asymmetry of the electrowetting phenomenon. After further investigation of this phenomenon, it was found that it mainly accounted for the decrease in electric field strength at both ends of the droplet, which was caused by electrochemical reactions and changes in circuit resistance. The leakage current is an important indicator, and this phenomenon can be prevented by increasing the thickness of the hydrophobic dielectric layer.

Optimization of Epitaxial Structures on GaN-on-Si(111) HEMTs with Step-Graded AlGaN Buffer Layer and AlGaN Back Barrier

Recently, crack-free GaN-on-Si growth technology has become increasingly important due to the high demand for power semiconductor devices with high performances. In this paper, we have experimentally optimized the buffer structures such as the AlN nucleation layer and step-graded AlGaN layer for AlGaN/GaN HEMTs on Si (111) substrate by varying growth conditions and thickness, which is very crucial for achieving crack-free GaN-on-Si epitaxial growth. Moreover, an AlGaN back barrier was inserted to reduce the buffer trapping effects, resulting in the enhancement of carrier confinement and suppression of current dispersion. Firstly, the AlN nucleation layer was optimized with a thickness of 285 nm, providing the smoothest surface confirmed by SEM image. On the AlN nucleation layer, four step-graded AlGaN layers were sequentially grown by increasing the Al composition from undermost layer to uppermost layer, meaning that the undermost one was close to AlN, and the uppermost was close to GaN, to reduce the stress and strain in the epitaxial layer gradually. It was also verified that the thicker step-graded AlGaN buffer layer is suitable for better crystalline quality and surface morphology and lower buffer leakage current, as expected. On these optimized buffer structures, the AlGaN back barrier was introduced, and the effects of the back barrier were clearly observed in the device characteristics of the AlGaN/GaN HEMTs on Si (111) substrate such as the transfer characteristics, output characteristics and pulsed I-V characteristics.

Bi compensation and poling process to enhance piezoelectric properties of BiFeO3-BaTiO3 lead-free piezoceramics

BiFeO3-BaTiO3 (BF-BT) ceramics are an excellent choice for high-temperature lead-free piezoelectric ceramic due to their high Curie temperature and good piezoelectric properties, but the volatilization of Bi leads to the formation of A-site cationic vacancies and oxygen vacancies, culminating in heightened leakage currents and detrimental effects on piezoelectric properties. In this study, a chemical composition of 0.70Bi(1+x)Fe0·97Al0·03O3-0.30BaTiO3 ceramics, abbreviated as B1+xFA-BT, where 0 ≤ x ≤ 0.05, were synthesized, with special attention on the effects of Bi compensation and poling process on their insulation and piezoelectric properties. Due to the coexistence of R-PC phases and low leakage current, B1+xFA-BT ceramics exhibit excellent piezoelectric properties and high Curie temperature, among which the B1.02FA-BT ceramic boasts optimal overall properties: d33 = 196 pC N−1, TC = 480 °C, kp = 34%, θmax = 49.5° and Qm = 32, under optimal poling parameters Ep = 50 kV cm−1 and Tp = 100 °C. The poling process is directly linked to the reorientation of domains, the redistribution of positive/negative space charge and the aggregation or injection of holes, which is achieved by tuning the poling field and temperature in a ceramic with optimal integrated piezoelectric properties. The poling process of BF-BT ceramics is significantly influenced by their leakage characteristics, which can have a significant impact on their overall performance. Optimizing electrical poling conditions and minimizing leakage current is crucial to achieving favorable piezoelectric properties in BF-BT ceramics with R-PC coexisting structures.

Grounding Resistance Monitoring Device for Improved Construction Electricity Safety in Pumped Storage Power Station Construction

Abstract During the construction period of pumped storage power stations, there are prominent safety hazards in the use of electricity. Most of the underground chambers are in rocky environments, and it is difficult to meet the standard requirements for the grounding resistance of nearby distribution boxes. In addition, due to the high humidity and large amount of dust in the chambers, the grounding terminals are prone to oxidation. Furthermore, frequent blasting operations can cause poor contact of the grounding terminals, resulting in the inability to effectively guide the leakage current into the earth and causing electric shock injury. By using the TN-S wiring method, the leakage current of the equipment and distribution box is guided into the ground grid through the PE line. At the same time, a real-time monitoring system is established for the PE line, which monitors the integrity of the PE line resistance between the third-level distribution box and the transformer ground grid. When an integrity failure occurs, an alarm is quickly issued, enabling maintenance personnel to promptly detect and repair the fault, ensuring that all leakage currents have a good export channel, and further guaranteeing the safety of electricity users.

Capacitance modeling, simulation and RF characterization of horizontal floating gate field effect transistor (H-FGFET) for gas sensing application

In this paper, physics-based capacitance model has been developed for horizontal floating gate field effect transistor (H-FGFET). The horizontal design of floating gate (FG) FET allows detection of large gas molecules like nitrogen dioxide (NO2), sulphur dioxide (SO2), hydrogen sulfide (H2S), carbon dioxide (CO2) etc. In order to validate the proposed model, the device has been designed using Sentaurus TCAD simulator and results have been validated with experimental data. Different electrical parameters such as transfer characteristics, switching ratio, output characteristics, threshold voltage, drain induced barrier lowering (DIBL), C-V characteristics, transconductance, output conductance and RF characteristics of the device have been analyzed at room temperature. The simulation result shows that increase in channel length of H-FGFET results in decreased leakage current, improved switching performance, increased gate capacitance and reduced DIBL. The comparative analysis of H-FGFET with previously reported floating gate FET structures reveal that proposed device offers highest switching ratio. The RF characteristics of H-FGFET illustrates that proposed device can operate efficiently as an amplifier for the frequency range of 0.1 GHz to 100 GHz. Further, the proposed device has also been tested for the detection of nitrogen dioxide gas and results reveal that with increase in operating temperature from 30 °C to 180 °C the leakage current of the device increases from 10−13 to 10−9 and OFF current sensitivity of the proposed sensor changes by 82% on changing the work function of sensing layer from 50 meV to 250 meV.

Controlled growth of uniform and dense perovskite layers on SnO2 via interface passivation by PbS quantum dots

AbstractFormamidinium lead iodide (FAPbI3) and SnO2 are a promising pair of halide perovskite and electron transport layer (ETL). However, FAPbI3 and SnO2 have inherent problems such as high crystallization temperature of FAPbI3 and surface defects of SnO2 like oxygen vacancies. They cause low crystallinity, non‐uniform grain growth, and more interface defects, leading to carrier recombination and leakage current. The passivation of the interface between FAPbI3 and SnO2 is an effective process to address these materials issues. Herein, a dual role of lead sulfide (PbS) quantum dots (QDs) in the interface passivation is explored. PbS QDs which are introduced to the interface between FAPbI3 and ETL, link to Sn‐dangling bonds of SnO2 ETLs and anchor the iodine atoms of FAPbI3. This changes considerably lower nonradiative recombination, achieve a better energetic alignment between ETL and PbI3, and facilitate electron extraction, leading to a power conversion efficiency of 21.66%.image

Silicon (100) surface passivation-driven tuning of Ag film crystallinity and its impact on the performance of Ag/n-Si mid-infrared Schottky photodetector

The utilization of metal/semiconductor Schottky devices for plasmonic harvesting of hot carriers holds immense potential in the field of sub-bandgap photodetection. In this work, we explore a surface passivation scheme using air plasma exposure to modify the Si (100) surface and subsequently the crystal orientation of the deposited Ag film for photon detection in the mid-infrared (MIR) regime. This tailoring was achieved by varying the plasma exposure duration (0, 150, 300, 450, and 600 s). As a result, we could tune the crystal orientation of Ag from the (200) to the (210) crystal plane, with the Ag (111) orientation present in all devices. Furthermore, the photo-response behavior under MIR exposure at λ = 4.2 µm was studied both experimentally and using COMSOL simulations. It was observed that both photoelectric (PE) and photothermal (PT) effects contributed to the photo-response behavior of all devices. The Ag/Si device exposed to air plasma for 300 s exhibited the maximum PE-driven response (2.73 µA/W), while the device exposed to air plasma for 600 s showed a significant PT-driven response (13.01 µA/W). In addition, this strategy helped reduce the reverse leakage current by up to 99.5%. This study demonstrates that MIR detection at longer wavelengths can be optimized by tailoring the crystal orientation of the metal film.

Inside Front Cover Image

Indoor photovoltaics suffer from non‐radiative recombination and parasitic leakage current especially due to low carrier density. Incorporating a porous alumina interlayer in perovskite photovoltaics mitigates non‐radiative recombination and parasitic leakage current, enhancing efficiency under low‐light indoor conditions. This strategy is demonstrated in large‐area modules at 23.03 cm2, achieving 33.5% efficiency and 107.3 µW/cm2 power density under LED 1000 lux.image

From GaN crystallinity to device performance: Nucleation mode vs Surface energy of single-crystalline AlN template

In this paper, the surface state of the single-crystalline AlN template's impact on the epitaxial growth of gallium nitride (GaN) was studied. Subsequently, Schottky barrier devices were fabricated and analyzed. The results indicate that surface states subjected to different treatments exhibit varying epitaxial growth modes at the initial nucleation stage, which have a correlated effect on surface topography, crystalline quality, strain and other material characteristics of the epitaxial GaN. Higher surface energy leads to a reduction in screw dislocation of GaN material, but has less influence on edge dislocation. Single-crystalline AlN templates with higher surface energy are more likely to exhibit Stranski-Krastanow and Frank-van der Merwe growth model and achieve high-quality epitaxial materials. Schottky devices prepared using GaN material with lower screw dislocation density exhibit lower reverse leakage current. First-principles simulation analysis revealed that the migration barrier of gallium and nitrogen atoms on the surface can be overcome with the larger surface energy of single-crystalline AlN template. This facilitates their migration on the surface, resulting in higher quality material epitaxy. The conclusions of this work provide insights for quality control of epitaxial GaN materials on single-crystalline AlN templates, as well as for studying device leakage in the backend of the device fabrication process, or similar homogeneous compound semiconductor heteroepitaxy studies.