Leakage Current Research Articles

Optical properties of hafnium-dioxide derived from reflection electron energy loss spectroscopy spectra

The optical properties of HfO2 have practical applications. As an important gate dielectric material with high-k dielectric, HfO2 is beneficial to reduce the leakage current of the complementary metal-oxide-semiconductor (CMOS) gate and improves the gate structure. HfO2 also plays a key role in optical coating materials field for its high transmittance in the ultraviolet to near-infrared band, and high laser damage threshold. Therefore, it is of practical significance for the accurate knowledge of optical properties of HfO2. Here we present the optical constants and dielectric function of HfO2 based on the energy loss function (ELF) in the energy loss range of 0–200 eV for nanocrystalline film. Our new data are derived from the analysis of the reflected electron energy loss spectra by using the latest version of our reverse Monte Carlo modelling. Sum rules are used to check the reliability of the new data. We have found that up to 30 eV there are three main peaks, and the first-principles calculation also confirms the three peak structures. A comparison with previous results indicates that the ELF peak positions of HfO2 with different crystal structures are similar, but the peak intensity and shape are different. The heterogenicity of the crystal structure of HfO2 leads to different measurement results for different samples.

Reduction of interface defects in gate-recessed GaN HEMTs by neutral beam etching

This study investigates and compares the impact of different etching techniques on the fabrication of GaN high electron mobility transistors (HEMTs) between the inductively coupled plasma reactive ion etching (ICP-RIE) and the neutral beam etching (NBE) for the gate recess. By conducting direct current analysis, it was found that devices manufactured using the NBE exhibited superior electrical performance as compared with those produced using the ICP-RIE. These enhanced electrical characteristics include a transconductance of up to 100.4 mS/mm, a threshold voltage (Vth) of −2.3 V, an on/off current ratio of 1.1 × 109, a subthreshold swing (S.S.) of 99.63 mV/dec, and a remarkably low gate leakage current. Additionally, we noted varying degrees of hysteresis in the I–V characteristics were related to process disparities possibly leading to interface defects. Multi-frequency capacitance-voltage (C–V) measurements were used to identify the interface defects at the oxide/AlGaN interface of the gate. The results revealed that devices fabricated using the NBE exhibited a lower interface defect density as compared with those fabricated using the ICP-RIE, thereby elucidating the reduced hysteresis observed in the I–V characteristics. These findings indicated the significant advantages of the NBE process in the fabrication of GaN HEMTs.

Solution to SRAM static power consumption with MTCMOS

The rapid growth of mobile devices has led to an increasing demand for battery life and energy efficiency in recent years, the reduction of circuit power consumption has become extremely crucial. SRAM has become an indispensable component of modern System-on-Chip (SoC) designs, and reducing its power consumption holds significant importance in minimizing overall chip power consumption. On the other hand, as manufacturing processes advance, static power consumption resulting from leakage currents has gradually emerged as a primary source of power consumption. This paper analyzes the power composition of SRAM, provides a detailed explanation of the principles and influencing factors of MTCMOS design technology, and conducts modeling analysis on 6T SRAM based on MTCMOS. In the modeling analysis, we compare the leakage current and static power reduction effects of 6T SRAM using four different process technologies: 28nm, 40nm, 65nm, and 90nm. From the data, it can be observed that MTCMOS has a notable effect in reducing leakage current for 6T SRAM across various process technologies. Comparing 6T SRAM of different process technologies, we can roughly see that the power reduction effect reaches a peak and gradually decreases. However, due to the lack of more advanced process libraries, we cannot further validate whether this inference is accurate.

High-Performance Gate-Controlled Superconducting Switches: Large Output Voltage and Reproducibility.

Logic circuits consist of devices that can be controlled between two distinct states. The recent demonstration that a superconducting current flowing in a constriction can be controlled via a gate voltage (VG)─gate-controlled supercurrent (GCS)─can lead to superconducting logic with better performance than existing logics. However, before such logic is developed, high reproducibility in the functioning of GCS devices and optimization of their performance must be achieved. Here, we report an investigation of gated Nb devices showing GCS with very high reproducibility. Based on the investigation of a statistically significant number of devices, we demonstrate that the GCS is independent of the constriction width, in contrast with previous reports, and confirm a strong correlation between the GCS and the leakage current (Ileak) induced by VG. We also achieve a voltage output in our devices larger than the typical values reported to date by at least 1 order of magnitude, which is relevant for the future interconnection of devices, and show that Ileak can be used as a tool to modulate the operational VG of devices on a SiO2 substrates. These results altogether represent an important step forward toward the optimization of reproducibility and performance of GCS devices, and the future development of a GCS-based logic.

Novel deuterated cyclopentadienyl zirconium/hafnium precursors for atomic layer deposition of high-performance ZrO2/HfO2 thin films

The need to improve the electrical properties of ZrO2 and HfO2 thin films deposited by atomic layer deposition (ALD), which is widely used in the field of microelectronics, is growing. Attempts to improve precursor stability unavoidably lead to reduced reactivity and diminished utility. Therefore, we synthesized and developed two new ALD precursors by introducing deuterium, which simultaneously exhibit enhanced thermal stability and enhanced reactivity as a result of the introduction of deuterium. For the substitution of deuterium for hydrogen in the precursors responsible for the enhanced thermal stability, we experimentally and theoretically demonstrated that thermal stability and reactivity can be simultaneously enhanced by reducing the bonding dissociation energy of ligands that have not undergone deuterium substitution. This observation led to the development of ZrO2 and HfO2 ALD processes that result in no impurities within the thin films and minimal substrate damage even at a very high deposition temperature of 400 °C. In particular, the improvement in crystallinity through ultra-high-temperature ALD deposition resulted in excellent electrical properties in a metal–insulator–metal capacitor in which the film was incorporated; the capacitor demonstrated a dielectric constant of 37.9 and leakage current of 3.52 × 10−9 A cm−2, without the need for a subsequent annealing process.

Measuring the Electronic Bandgap of Carbon Nanotube Networks in Non-Ideal p-n Diodes.

The measurement of the electronic bandgap and exciton binding energy in quasi-one-dimensional materials such as carbon nanotubes is challenging due to many-body effects and strong electron-electron interactions. Unlike bulk semiconductors, where the electronic bandgap is well known, the optical resonance in low-dimensional semiconductors is dominated by excitons, making their electronic bandgap more difficult to measure. In this work, we measure the electronic bandgap of networks of polymer-wrapped semiconducting single-walled carbon nanotubes (s-SWCNTs) using non-ideal p-n diodes. We show that our s-SWCNT networks have a short minority carrier lifetime due to the presence of interface trap states, making the diodes non-ideal. We use the generation and recombination leakage currents from these non-ideal diodes to measure the electronic bandgap and excitonic levels of different polymer-wrapped s-SWCNTs with varying diameters: arc discharge (~1.55 nm), (7,5) (0.83 nm), and (6,5) (0.76 nm). Our values are consistent with theoretical predictions, providing insight into the fundamental properties of networks of s-SWCNTs. The techniques outlined here demonstrate a robust strategy that can be applied to measuring the electronic bandgaps and exciton binding energies of a broad variety of nanoscale and quantum-confined semiconductors, including the most modern nanoscale transistors that rely on nanowire geometries.

Familial Episodic Pain Syndrome: A Japanese Family Harboring the Novel Variant c.2431C>T (p.Leu811Phe) in SCN11A.

Familial episodic pain syndrome (FEPS) is an autosomal-dominant inherited disorder characterized by paroxysmal pain episodes. FEPS appears in early childhood, gradually disappearing with age, and pain episodes can be triggered by fatigue, bad weather, and cold temperatures. Several gain-of-function variants have been reported for SCN9A, SCN10A, or SCN11A, which encode the voltage-gated sodium channel α subunits Nav1.7, Nav1.8, and Nav1.9, respectively. In this study, we conducted genetic analysis in a four-generation Japanese pedigree. The proband was a 7-year-old girl, and her brother, sister, mother, and grandmother were also experiencing or had experienced pain episodes and were considered to be affected. The father was unaffected. Sequencing of SCN9A, SCN10A, and SCN11A in the proband revealed a novel heterozygous variant of SCN11A: g.38894937G>A (c.2431C>T, p.Leu811Phe). This variant was confirmed in other affected members but not in the unaffected father. The affected residue, Leu811, is located within the DII/S6 helix of Nav1.9 and is important for signal transduction from the voltage-sensing domain and pore opening. On the other hand, the c.2432T>C (p.Leu811Pro) variant is known to cause congenital insensitivity to pain (CIP). Molecular dynamics simulations showed that p.Leu811Phe increased the structural stability of Nav1.9 and prevented the necessary conformational changes, resulting in changes in the dynamics required for function. By contrast, CIP-related p.Leu811Pro destabilized Nav1.9. Thus, we speculate that p.Leu811Phe may lead to current leakage, while p.Leu811Pro can increase the current through Nav1.9.

Design optimization of wide-gate swing E-mode GaN HEMTs with junction barrier Schottky gate

To increase the gate swing, a GaN-based high-electron-mobility transistor with a junction barrier Schottky gate (JBS-HEMT) was proposed. Compared to conventional p-GaN Schottky gate HEMTs (Conv-HEMT), the high electric field at the surface is transferred to the pn junction inside the body, and the extended depletion region of the pn junction shields the surface Schottky contact interface for the JBS-HEMT. After fitting the model to the reported device, the proposed JBS-HEMT was simulated and optimized using the Sentaurus TCAD tool. The simulation results of the optimized JBS-HEMT demonstrate a high gate breakdown voltage (17.6 V), which is 158.5% higher than the gate breakdown voltage of the Conv-HEMT (11.1 V) and a lower gate leakage current of six orders of magnitude than the Conv-HEMT at the gate-to-source voltage of 10 V. The proposed JBS-HEMT exhibits a positive threshold voltage (1.68 V) and excellent threshold voltage stability, and the maximum threshold voltage drift of the JBS-HEMT (+0.237 V) is smaller than that of the Conv-HEMT (−0.714 V) under gate stress conditions. The peak transconductance of the JBS-HEMT (186 mS mm−1) at athe drain-to-source voltage of 10 V showed almost no reduction compared to the Conv-HEMT (189 mS mm−1), which solves the problem of decreased transconductance capability of the reported GaN HEMT with a p-n junction gate (PNJ-HEMT). It was confirmed that the JBS-HEMT has excellent gate stability and potential for power electronics applications.

Study on Single Event Effects of Enhanced GaN HEMT Devices under Various Conditions.

GaN HEMT devices are sensitive to the single event effect (SEE) caused by heavy ions, and their reliability affects the safe use of space equipment. In this work, a Ge ion (LET = 37 MeV·cm2/mg) and Bi ion (LET = 98 MeV·cm2/mg) were used to irradiate Cascode GaN power devices by heavy ion accelerator experimental device. The differences of SEE under three conditions: pre-applied electrical stress, different LET values, and gate voltages are studied, and the related damage mechanism is discussed. The experimental results show that the pre-application of electrical stress before radiation leads to an electron de-trapping effect, generating defects within the GaN device. These defects will assist in charge collection so that the drain leakage current of the device will be enhanced. The higher the LET value, the more electron-hole pairs are ionized. Therefore, the charge collected by the drain increases, and the burn-out voltage advances. In the off state, the more negative the gate voltage, the higher the drain voltage of the GaN HEMT device, and the more serious the back-channel effect. This study provides an important theoretical basis for the reliability of GaN power devices in radiation environments.

A tunable multi-timescale Indium-Gallium-Zinc-Oxide thin-film transistor neuron towards hybrid solutions for spiking neuromorphic applications

Spiking neural network algorithms require fine-tuned neuromorphic hardware to increase their effectiveness. Such hardware, mainly digital, is typically built on mature silicon nodes. Future artificial intelligence applications will demand the execution of tasks with increasing complexity and over timescales spanning several decades. The multi-timescale requirements for certain tasks cannot be attained effectively enough through the existing silicon-based solutions. Indium-Gallium-Zinc-Oxide thin-film transistors can alleviate the timescale-related shortcomings of silicon platforms thanks to their bellow atto-ampere leakage currents. These small currents enable wide timescale ranges, far beyond what has been feasible through various emerging technologies. Here we have estimated and exploited these low leakage currents to create a multi-timescale neuron that integrates information spanning a range of 7 orders of magnitude and assessed its advantages in larger networks. The multi-timescale ability of this neuron can be utilized together with silicon to create hybrid spiking neural networks capable of effectively executing more complex tasks than their single-technology counterparts.

Performance Enhancement of Tricalcium Phosphate Film for Bioelectronics with Bio‐Friendly Supercritical Fluids Desorption Technology

AbstractIn the rapidly advancing field of bioelectronics, searching for materials that combine superior insulating properties with biocompatibility is crucial, especially for implantable electronic devices. Traditional insulators in mature CMOS processes, though effective, lack biocompatibility, necessitating the exploration of alternative materials. This study introduces tricalcium phosphate (Ca3(PO4)2), a primary component of human bones, and teeth, as an insulating layer material for the first time. High‐quality, thickness‐controlled Ca3(PO4)2 films are fabricated using magnetron sputtering, and their electrical insulation, stability, and optical transparency have been thoroughly evaluated. To further optimize the insulation performance of Ca3(PO4)2, particularly against residual impurities, and fabrication‐induced defects, a bio‐friendly low‐temperature supercritical fluid desorption (LTSCF‐Desorption) technique is developed, effectively removing impurities, repairing defects, and improving the interface states. After LTSCF‐Desorption treatment, the leakage current of the Ca3(PO4)2 films is reduced by 30%, along with the enhancements of the films' stability and transmittance. Further material analysis clarified the internal mechanisms behind the improvement of the Ca3(PO4)2 films. Overall, this study not only broadens the application scenarios of Ca3(PO4)2 in bioelectronics but also develops a bio‐friendly supercritical desorption technique, providing a new pathway for optimizing the performance of bioelectronic devices and materials.

The role of carbon segregation in the electrical activity of dislocations in carbon doped GaN

Dislocations have been proposed to affect the performance and reliability of GaN power semiconductors by being conductive pathways for leakage current. However, no direct evidence of a link between their electrical behavior and physical nature in carbon-doped semi-insulating GaN buffer layers has been obtained. Therefore, we investigate the electrical activity of dislocations by conductive atomic force microscopy and electron beam induced current to distinguish electrically active dislocations from non-active ones. We investigated six electrically active dislocations and discovered distinct carbon enrichment in the vicinity of all six dislocations, based on cross-sectional scanning transmission electron microscopy using electron energy loss spectrometry. Electrically non-active dislocations, which are the vast majority, sometimes also showed carbon enrichment, however, in only two out of seven cases. Consequently, carbon segregation seems to be a requirement for electrical activity, but a carbon surplus is not sufficient for electrical activity. We also performed first-principles total-energy calculations for mixed type threading dislocations, which validates carbon accumulation in the dislocation vicinity. The electrical and physical characterization results, complemented by density functional theory simulations, support the previously hypothesized existence of a carbon defect band and add new details.

Hybrid interconnecting layers reduce current leakage losses in perovskite/silicon tandems with 81.8% fill factor

Hybrid interconnecting layers reduce current leakage losses in perovskite/silicon tandems with 81.8% fill factor

Unveiling microstructural damage for leakage current degradation in SiC Schottky diode after heavy ions irradiation under 200 V

Single-event burnout and single-event leakage current (SELC) in silicon carbide (SiC) power devices induced by heavy ions severely limit their space application, and the underlying mechanism is still unclear. One fundamental problem is lack of high-resolution characterization of radiation damage in the irradiated SiC power devices, which is a crucial indicator of the related mechanism. In this Letter, high-resolution transmission electron microscopy (TEM) was used to characterize the radiation damage in the 1437.6 MeV 181Ta-irradiated SiC junction barrier Schottky diode under 200 V. The amorphous radiation damage with about 52 nm in diameter and 121 nm in length at the Schottky metal (Ti)–semiconductor (SiC) interface was observed. More importantly, in the damage site the atomic mixing of Ti, Si, and C was identified by electron energy loss spectroscopy and high-angle annular dark-field scanning TEM. It indicates that the melting of the Ti–SiC interface induced by localized Joule's heating is responsible for the amorphization and the possible formation of titanium silicide, titanium carbide, or ternary phases. The mushroom-like hillock in the Ti layer can be attributed to Rayleigh–Taylor instability, as another evidence for ever-happened localized melting near the Schottky interface. These modifications at nanoscale in turn cause localized degradation of the Schottky contact, resulting in permanent increase in leakage current. This experimental study provides very valuable clues for a thorough understanding of the SELC mechanism in SiC diodes.

Photoelectric property degradation of graded barrier InAs/GaSb type II superlattice long-wave infrared detectors under 1 MeV electron irradiation.

Amid rapid advancements in aerospace science and technology, studying the effects of space radiation on an infrared detector is crucial for enhancing their reliability in radiation environments, particularly against electrons-one of the most damaging charged particles. Barrier structures significantly reduce dark current without any substantial degradation in the optical performance of the devices. Consequently, they are being investigated for use in extreme environments. This paper presents a study on the performance degradation of InAs/GaSb type II superlattice (T2SLs) long-wave infrared (LWIR) detectors with a graded barrier structure under 1 MeV electron irradiation and analyzes potential damage mechanisms. The findings indicate that 1 MeV electron irradiation causes both ionization and displacement damage to the graded barrier InAs/GaSb T2SL LWIR detectors. After irradiation with a fluence of 2 × 1015 e/cm2, the device's dark current density has increased by approximately two orders of magnitude, while the quantum efficiency has decreased by approximately one order of magnitude. As the device mesa shrinks, the sensitivity of dark current to radiation exposure increases. Electron irradiation notably exacerbates surface leakage and bulk dark current, with a pronounced increase in surface leakage current. The study also reveals that electron irradiation primarily enhances the dark current by introducing defect states, thereby leading to device performance degradation.

Reduced trap state density in AlGaN/GaN HEMTs with low-temperature CVD-grown BN gate dielectric

In this Letter, low-temperature (400 °C) chemical vapor deposition-grown boron nitride (BN) was investigated as the gate dielectric for AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) on a Si substrate. Comprehensive characterizations using x-ray photoelectron spectroscopy, reflection electron energy loss spectroscopy, atomic force microscope, high-resolution transmission electron microscopy, and time-of-flight secondary ion mass spectrometry were conducted to analyze the deposited BN dielectric. Compared with conventional Schottky-gate HEMTs, the MISHEMTs exhibited significantly enhanced performance with 3 orders of magnitude lower reverse gate leakage current, a lower off-state current of 1 × 10−7 mA/mm, a higher on/off current ratio of 108, and lower on-resistance of 5.40 Ω mm. The frequency-dependent conductance measurement was performed to analyze the BN/HEMT interface, unveiling a low interface trap state density (Dit) on the order of 5 × 1011–6 × 1011 cm−2 eV−1. This work shows the effectiveness of low-temperature BN dielectrics and their potential for advancing GaN MISHEMTs toward high-performance power and RF electronics applications.

Role of oxygen vacancy in controlling the resistive switching mechanism for the development of conducting filaments in response of homo and hetero electrodes: Using DFT approach

In the realm of progression of internet of things, artificial intelligence and cloud services, nonvolatile memory devices such as, resistive random access memory (RRAM) emulated the vision of building internet of everything. In this study, robustness of homo- (Ag–Ag, and Pt–Pt), and hetero- (Ag–Pt) top, and bottom electrodes material without and with incorporated oxygen vacancies (Vos) in Sr4Ti4O12 RS layer were investigated. Presence of conductivity in the absence of external electric field proves the presence of nonvolatile memory behavior. Observed RS behavior (in the range of a few Angstroms) may be used to resolve the scalability issue of the proposed RRAM device system. At the same time, oxygen vacancies (Vos) introduced additional functionalities like: additional reduction sites, and reduction of leakage current by quantizing the conduction within RS material. Diffusion barrier elucidated the diffusion mechanism of oxygen vacancies in the considered heterostructure to understand the energy state and the type of RS conduction mechanism. Potential energy line ups, formation energy and electronic properties identified the Vos as principal sites for reduction of Ag atoms by forming metal oxide (Ag-Vos) complex. It is predicted that ReSET, and hence high resistance state (HRS) is harder to achieve with homo-electrodes. The findings of this study provides the effective solution to scalability, stability, and low power consumption in the realm of Pt–Sr4Ti4O12–Ag (with 2Vos mediated in RS layer) based RRAM devices.

A full-head model to investigate intra and extracochlear electric fields in cochlear implant stimulation

Objective. Despite the widespread use and technical improvement of cochlear implant (CI) devices over past decades, further research into the bioelectric bases of CI stimulation is still needed. Various stimulation modes implemented by different CI manufacturers coexist, but their true clinical benefit remains unclear, probably due to the high inter-subject variability reported, which makes the prediction of CI outcomes and the optimal fitting of stimulation parameters challenging. A highly detailed full-head model that includes a cochlea and an electrode array is developed in this study to emulate intracochlear voltages and extracochlear current pathways through the head in CI stimulation. Approach. Simulations based on the finite element method were conducted under monopolar, bipolar, tripolar (TP), and partial TP modes, as well as for apical, medial, and basal electrodes. Variables simulated included: intracochlear voltages, electric field (EF) decay, electric potentials at the scalp and extracochlear currents through the head. To better understand CI side effects such as facial nerve stimulation, caused by spurious current leakage out from the cochlea, special emphasis is given to the analysis of the EF over the facial nerve. Main results. The model reasonably predicts EF magnitudes and trends previously reported in CI users. New relevant extracochlear current pathways through the head and brain tissues have been identified. Simulated results also show differences in the magnitude and distribution of the EF through different segments of the facial nerve upon different stimulation modes and electrodes, dependent on nerve and bone tissue conductivities. Significance. Full-head models prove useful tools to model intra and extracochlear EFs in CI stimulation. Our findings could prove useful in the design of future experimental studies to contrast FNS mechanisms upon stimulation of different electrodes and CI modes. The full-head model developed is freely available for the CI community for further research and use.

Optimizing TCAD Model and Temperature-Dependent Analysis of Pt/AlN Schottky Barrier Diodes for High-Power and High-Temperature Applications

This research presents a comprehensive investigation and optimization of the Pt/AlN Schottky Barrier diode (SBD) using technology computer-aided design (TCAD) modeling. The study explores the electrical characteristics of AlN SBDs with various metal contacts, including Aluminum (Al), Silver (Ag), Tungsten (W), Gold (Au), Nickel (Ni), and Platinum (Pt). Through the comparative analyses of different metal/AlN Schottky contacts, the Pt/AlN structure emerges as the most promising due to its superior barrier height and lower leakage current. At [Formula: see text]K, the diode demonstrates a barrier height of 2.72[Formula: see text]V, a nearly ideal leakage current of 0.046[Formula: see text]pA, and a breakdown voltage of 363[Formula: see text]V. The research extends to examining the temperature-dependent electrical behavior of Pt/AlN Schottky diodes, particularly for high-power and high-temperature applications. Analysis carried out across temperatures ranging from [Formula: see text]K to [Formula: see text]K reveals a trend of increasing ON resistance and consistently lower leakage current with rising temperature. Importantly, the study indicates that the impact of temperature on the barrier height and breakdown voltage of the diode is negligible, thus rendering it suitable for high-temperature operation. Leveraging the unique properties of AlN as an ultra-wide bandgap material within the III-V compound semiconductor family, this research provides valuable insights into the potential applications of Pt/AlN Schottky contact. The study highlights that the Pt/AlN Schottky contact is effective not only for high-power, high-temperature SBDs but also as superior metal/semiconductor gate contacts for field-effect transistors (FETs). Their suitability is attributed to their ability to handle high voltages, minimize reverse leakage current, and demonstrate improved thermal stability.

Enhancement of ferroelectric properties of the Ga0.6Fe1.4O3 films by Zn,N co-doping

Multiferroic materials have attracted considerable interests due to their scientific and technological importance in advanced devices. Ga0.6Fe1.4O3 thin film exhibits ferrimagnetism above room temperature but suffers from large leakage current. To reduce the charge conduction and enhance the ferroelectric properties of Ga0.6Fe1.4O3 film, ion doping is a useful technique. In this study, we fabricated Ga0.6Fe1.4-xZnxO3/N films by substituting Zn2+ and N3- ions in Ga0.6Fe1.4O3 for Fe and O, respectively. The influence of Zn, N co-doping on the structure, leakage current, magnetic and ferroelectric properties of the films were investigated. The results indicated that the films exhibited the orthorhombic structure with the incorporation of Zn and N. All Ga0.6Fe1.4-xZnxO3/N films showed above room temperature ferrimagnetism, and the magnetization and transition temperature values decreased with Zn,N co-doping. The microscopic and macroscopic ferroelectric measurements have demonstrated the ferroelectric polarization switching of the films. The ferroelectric hysteresis loops of the Ga0.6Fe1.38Zn0.02O3/N film showed the remnant polarization of ∼0.46 μC/cm2 with the coercive field of ±2 V at room temperature. The leakage current significantly reduced from ∼3.27×10−1 A/cm2 for pure Ga0.6Fe1.4O3 film to ∼1.48×10−5 A/cm2 for Ga0.6Fe1.35Zn0.05O3/N film, by four orders of magnitude. This may be attributed to the incorporation of Zn2+ and N3-, providing charge compensation to valence fluctuations of Fe between Fe3+ and Fe2+. These results provide an effective method to improve the ferroelectricity of Ga0.6Fe1.4O3 film, and open a wide perspective for the potential application in magnetoelectric devices.