Abstract Phthalocyanines represent a significant class of organic semiconductors that have garnered attention for their potential applications in conducting polymers and organic electronics. The unique structural characteristics of phthalocyanines, coupled with their chemical behavior and the possibility of variations in their bandgap associated with different substitution sites, offer exciting prospects for designing novel device applications. In this study, we have successfully fabricated a heterostructure incorporating dichloro tin (IV) hexa deca fluoro phthalocyanine (F16PcSnCl2) on both porous (PS) and crystalline (c-Si) silicon. The PS substrate was prepared using metal-assisted chemical etching (MACE). To explore the optoelectronic applications, we thoroughly characterized the optical, electrical, and morphological properties of the heterostructures. F16PcSnCl2 exhibits the lowest reflectance within the visible light spectrum, making it highly advantageous for photosensitive applications that demand efficient light absorption, diffusion, or scattering. The morphological analysis of the F16PcSnCl2 film using FE-SEM reveals the presence of nanosphere-type structures with diameters range from 62 ± 5 to 48 ± 5 nm and 151 ± 5 to 108 ± 5nm uniformly distributed on both PS and c-Si substrates, respectively, at different substrates temperatures (100 and 70 ºC). The absorbance spectrum exhibits the Soret, Q1 and Q2 bands at wavelength ranges from 330 to 358 nm, 566 to 588 nm and 620 to 652 nm, respectively, which serve as typical indicators of the F16PcSnCl2 complex. Al/c-Si/F16PcSnCl2/Ni-70°C and Al/c-Si/PS/F16PcSnCl2/Ni-70°C hybrid heterostructures fabricated for electrical characterization, displayed a better rectifying ohmic behavior and demonstrating a major photocurrent effect with current values of 300 µA and 30 µA, respectively, at white light conditions. Overall, the integration of organic and inorganic materials in heterostructures holds great promise for innovative applications in optoelectronics.