Heterojunction Layer Research Articles

Co-optimization of CuBi2O4 photocathode by heterojunction and hole-selective layer for efficient photoelectrochemical water splitting

Co-optimization of CuBi2O4 photocathode by heterojunction and hole-selective layer for efficient photoelectrochemical water splitting

High-Performance Visible-to-SWIR Photodetector Based on the Layered WS2 Heterojunction with Light-Trapping Pyramidal Black Germanium.

This study presents a layered transition metal dichalcogenide/black germanium (b-Ge) heterojunction photodetector that exhibits superior performance across a broad spectrum of wavelengths spanning from visible (vis) to shortwave infrared (SWIR). The photodetector includes a thin layer of b-Ge, which is created by wet etching of germanium (Ge) wafer to form submicrometer pyramidal structures. On top of this b-Ge layer, the WS2 thin film is deposited using pulsed laser deposition. In comparison to conventional germanium, b-Ge absorbs about 25% more light between 850 and 1750 nm wavelengths. The WS2/b-Ge photodetector has a peak photoresponsivity of 0.65 A/W, which is more than twice the photoresponsivity of the WS2/Ge photodetector at 1540 nm. Additionally, it shows better responsivity and response speed compared with other similar state-of-the-art photodetectors. Such an improvement in the performance of the device is credited to the light-trapping effect enabled by the germanium pyramids. Theoretical simulations employing the finite-difference time-domain technique help validate the concept. This novel photodetector holds promise for efficient detection of light across the vis to SWIR spectrum.

Lead sulfide quantum dots in an organic solar cell active layer

Organic solar cells have been fabricated using various concentrations of lead sulfide quantum dots. Data from Mott–Schottky analysis revealed intriguing changes in the bulk heterojunction layer of the solar cells that were directly related to the addition of the quantum dots. Notably, the highest power conversion efficiency of 5.15% was achieved with the addition of 0.4 wt% lead sulfide quantum dots.

Suppressed Ion Migration by Heterojunction Layer for Stable Wide-Bandgap Perovskite and Tandem Photovoltaics.

Wide-bandgap (WBG) perovskite has demonstrated great potential in perovskite-based tandem solar cells. The power conversion efficiency (PCE) of such devices has surpassed 34%, signifying a new era for renewable energy development. However, the ion migration reduces the stability and hinders the commercialization, which is yet to be resolved despite many attempts. A big step forward has now been achieved by the simulation method. The detailed thermodynamics and kinetics of the migration process have been revealed for the first time. The stability has been enhanced by more than 100% via the heterojunction layer on top of the WBG perovskite film, which provided extra bonding for kinetic protection. Hopefully, these discoveries will open a new gate for WBG perovskite research and accelerate the application of perovskite-based tandem solar cells.

An alternative chlorine-assisted optimization of CdS/Sb2Se3 solar cells: Towards understanding of chlorine incorporation mechanism

The current strategies in the development of Sb2Se3 thin film solar cells involve fabrication and optimization of superstrate and substrate device architectures, with the preferable choice for TiO2 and CdS heterojunction layers. For CdS-based superstrate cells, several studies reported the necessity to apply CdCl2 or other metal halide-based post-deposition treatment (PDT), highlighting improvement of CdS/Sb2Se3 device efficiency. However, the need, effect, and mechanism of such PDT are very often not described. Additionally, the fact that many groups have not succeeded in demonstrating its benefits suggests that this strategy is not straightforward, requiring a deeper understanding towards a more unified concept. The present study proposes an alternative approach to the challenging CdCl2 PDT of CdS in CdS/Sb2Se3 device, involving controllable Cl incorporation in CdS films by systematically varying the concentration of NH4Cl in the CBD precursor solution from 1 to 8 mM. Structural and electrical characterizations are correlated with advanced measurements of Scanning Kelvin Probe, surface photovoltage, and atomic force microscopy to understand the impact of Cl incorporation on the properties of CdS films and CdS/Sb2Se3 devices. The validity of Cl incorporation in the CdS lattice and interdiffusion processes at the CdS-Sb2Se3 interface is confirmed by secondary ion mass spectrometry analysis. It is demonstrated that incorporation of 1 mM of NH4Cl, as a Cl source in CBD CdS, can boost the PCE of CdS/Sb2Se3 by ∼20 %. With this approach, we offer new perspectives on the optimization methodology for Cl-based CdS/Sb2Se3 device processing and complementary understanding of the physiochemistry behind these processes.

Multi-heterojunctioned plastics with high thermoelectric figure of merit.

Conjugated polymers promise inherently flexible and low-cost thermoelectrics for powering the Internet of Things from waste heat1,2. Their valuable applications, however, have been hitherto hindered by the lowdimensionless figure of merit (ZT)3-6. Here we report high-ZT thermoelectric plastics, which were achieved by creating a polymeric multi-heterojunction with periodic dual-heterojunction features, where each period is composed of two polymers with a sub-ten-nanometre layered heterojunction structure and an interpenetrating bulk-heterojunction interface. This geometry produces significantly enhanced interfacial phonon-like scattering while maintaining efficient charge transport. We observed a significant suppression of thermal conductivity by over 60 per cent and an enhanced power factor when compared with individual polymers, resulting in a ZT of up to 1.28 at 368 kelvin. This polymeric thermoelectric performance surpasses that of commercial thermoelectric materials and existing flexible thermoelectric candidates. Importantly, we demonstrated the compatibility of the polymeric multi-heterojunction structure with solution coating techniques for satisfying the demand for large-area plastic thermoelectrics, which paves the way for polymeric multi-heterojunctions towards cost-effective wearable thermoelectric technologies.

Attapulgite-intercalated g-C3N4/ZnIn2S4 3D hierarchical Z-scheme heterojunction for boosting photocatalytic hydrogen production

Construction of hierarchical architecture with suitable band alignment for graphitic carbon nitride (g-C3N4) played a pivotal role in enhancing the efficiency of photocatalysts. In this study, a novel attapulgite-intercalated g-C3N4/ZnIn2S4 nanocomposite material (ZIS/CN/ATP, abbreviated as ZCA) was successfully synthesized using the freeze-drying technique, thermal polymerization, and a simple low-temperature hydrothermal method. Attapulgite (ATP) was intercalated into g-C3N4 to effectively regulate its interlayer structure. The results reveal a substantial enlargement of its internal space, thereby facilitating the provision of additional active sites for improved dispersibility of ZnIn2S4. Notably, the optimized photocatalyst, comprising a mass ratio of ATP, g-C3N4, and ZnIn2S4 at 1:1:2.5 respectively, achieves an outstanding hydrogen evolution rate of 3906.15 μmol g−1h−1, without the need for a Pt co-catalyst. This rate surpasses that of pristine g-C3N4 by a factor of 475 and ZnIn2S4 by a factor of 5, representing a significant improvement in performance. This significant enhancement can be primarily attributed to the higher specific surface area, richer active sites, broadened light response range, and efficient interfacial charge transfer channels of the ZCA composite photocatalyst. Furthermore, the Z-scheme photocatalytic mechanism for the sandwich-like layered structure heterojunction was thoroughly investigated using diverse characterization techniques. This work offers new insights for enhancing photocatalytic performance through the expanded utilization of natural minerals, paving the way for future advancements in this field.

Elucidating different roles of solvent additives in organic photovoltaics under solar and indoor light emission environments

Incorporation of solvent additive in bulk heterojunction layer has been effective method for the optimization of film morphology and crystallinity, enabling high efficiency organic solar cells under standard 1 SUN illumination. However, the effects of the additives in low-intensity indoor light environment have not been investigated much so far. In this study, a new donor polymer (PBz-ET) having an efficient spectral matching with LED was synthesized and employed. Moreover, we elucidate the different roles of additives for organic solar cell operations depending on 1 SUN and low-intensity LED illuminations. Through systemic characterizations on morphology, crystallinity, and electrical properties, we found that the additive boosting nanoscale phase separation is compatible for the organic solar cells working in 1 SUN illumination while the additive being capable of increasing crystallinity is more adaptable to those used for indoor light environment. The results in this study suggest a rational selection rule of additives for designing organic solar cells in different light environments.

P‐25: Tailoring the Threshold Voltage Control of Oxide Thin‐Film Transistor by Controlling Electron Injection using PN Semiconductor Heterojunction Structure

The threshold voltage (VT) is the most important parameter in semiconductor devices. To control the VT of the thin‐film transistors (TFTs), we propose heterojunction structure of p‐type Tellurium (Te) and n‐type Aluminum‐Doped Indium‐Zinc‐Tin‐Oxide (Al:IZTO) which acts as electron blocking layer and carrier transporting layer, respectively. We investigate the effect of adding the heterojunction layer on the Al:IZTO and demonstrate VT shift up to +20V by adjusting the thickness and single / double deposition of the heterojunction Te layer.

Dilute Donor Organic Solar Cells Based on Non-fullerene Acceptors.

The advent of small molecule non-fullerene acceptor (NFA) materials for organic photovoltaic (OPV) devices has led to a series of breakthroughs in performance and device lifetime. The most efficient OPV devices have a combination of electron donor and acceptor materials that constitute the light absorbing layer in a bulk heterojunction (BHJ) structure. For many BHJ-based devices reported to date, the weight ratio of donor to acceptor is near equal. However, the morphology of such films can be difficult to reproduce and manufacture at scale. There would be an advantage in developing a light harvesting layer for efficient OPV devices that contains only a small amount of either the donor or acceptor. In this work we explore low donor content OPV devices composed of the polymeric donor PM6 blended with high performance NFA materials, Y6 or ITIC-4F. We found that even when the donor:acceptor weight ratio was only 1:10, the OPV devices still have good photoconversion efficiencies of around 6% and 5% for Y6 and ITIC-4F, respectively. It was found that neither charge mobility nor recombination rates had a strong effect on the efficiency of the devices. Rather, the overall efficiency was strongly related to the film absorption coefficient and maintaining adequate interfacial surface area between donor and acceptor molecules/phases for efficient exciton dissociation.

Development of high conducting phosphorous doped nanocrystalline thin silicon films for silicon heterojunction solar cells application

We have investigated the plasma-enhanced chemical vapor deposition growth of the phosphorus-doped hydrogenated nanocrystalline silicon (n-nc-Si:H) film as an electron-selective layer in silicon heterojunction (SHJ) solar cells. The effect of power densities on the precursor gas dissociation are investigated using optical emission spectra and the crystalline fraction in n-nc-Si:H films are correlated with the dark conductivity. With the P d of 122 mW cm−2 and ∼2% phosphorus doping, we observed Raman crystallinity of 53%, high dark conductivity of 43 S cm−1, and activation energy of ∼23 meV from the ∼30 nm n-nc-Si:H film. The n-nc-Si:H layer improves the textured c-Si surface passivation by two-fold to ∼2 ms compared to the phosphorus-doped hydrogenated amorphous silicon (n-a-Si:H) layers. An enhancement in the open-circuit voltage and external quantum efficiency (from >650 nm) due to the better passivation at the rear side of the cell after integrating the n-nc-Si:H layer compared to its n-a-Si:H counterpart. An improvement in the charge carrier transport is also observed with an increase in fill factor from ∼71% to ∼75%, mainly due to a reduction in electron-selective contact resistivity from ∼271 to ∼61 mΩ-cm2. Finally, with the relatively better c-Si surface passivation and carrier selectivity, a power conversion efficiency of ∼19.90% and pseudo-efficiency of ∼21.90% have been realized from the SHJ cells.

Electrochemical UV/Ozone process with Ni-Sb-SnO2/SiOx anode for degradation of micropollutants in wastewater

We investigated the synergistic effects of ozone evolution reaction (OZER) coupled with UV irradiation for degradation of O3-refractory micro-pollutants in electrochemical (E)-UV/O3 process. A SiOx heterojunction layer over-coated on Ni-Sb-SnO2 remarkably enhanced the OZER across a wide pH range (0.4–10). The exceptional OZER efficiency was harnessed in E-UV/O3 to increase degradation rates (by 2.5–3.5-fold) and mineralization efficiencies (by 1.3–3.9-fold) for 2,6-dinitrotoluene (DNT) compared to the sums under dark electrolysis and photolysis. Clarifying DNT degradation intermediates and reactive oxygen species elucidated the promoting mechanism within the reaction network of O3 transformation to ∙OH, the principal oxidant for the supreme performance at near-neutral pH. Applicability of E-UV/O3 was demonstrated by minuscule halate ion generation, outstanding stability and energy efficiency, and elimination of N,N-diethyl-m-toluamide (DEET) in reverse osmosis concentrates (ROC). These comprehensive findings from mechanistic studies to real applications are expected to broaden the utilization of OZER-based water treatments.

Study on the modulation of sb phase change thin films and device properties by MoTe2 heterojunction layer

Study on the modulation of sb phase change thin films and device properties by MoTe2 heterojunction layer

Modulation of switching current density in T-type magnetic structure through magnetic anisotropy

We investigate magnetic field driven domain wall motion and spin-orbit torque (SOT) induced perpendicular magnetization switching of the ferrimagnetic layer in a T-type magnetic heterojunction with the structure of Pt/Co/Ta/Co81Tb19/Ta, where the bottom Co layer has in-plane magnetic anisotropy and the top Co81Tb19 layer has perpendicular magnetic anisotropy. It is found that the magnetic field driven domain wall motion and the depinning field of the Co81Tb19 layer can be effectively tuned by the thickness of the Co layer (tCo). Meanwhile, SOT-induced perpendicular magnetization switching of the Co81Tb19 layer is observed, and the critical switching current density first decreases and then increases with increasing the thickness of the Co layer. A lower critical switching current density was obtained at the optimized thickness (tCo = 1.2 nm), resulting in a 37% reduction in critical switching current density. Meanwhile, the research reveals a strong correlation between critical switching current density and magnetic anisotropy field, indicating that tuning the magnetic anisotropy is an efficient way to modulate the switching current density in a T-type magnetic structure. These results provide a new perspective on SOT manipulation and will be useful for the design of SOT-based devices.

Ternary organic bulk-heterojunction strategy enables efficient light utilization for perovskite solar cells

Extending the photoresponse into the near-infrared region (NIR) is an urgent research topic in perovskite solar cells. A ternary bulk heterojunction (BHJ) layer composited with PC61BM, D18-Cl and Y6 was deposited onto the perovskite to broaden light absorption. The ternary BHJ layer can absorb low-energy photons in the NIR region (800–920 nm) and generate excitons. Subsequently, these excitons dissociate into free electrons and holes at the donor-acceptor interface, thus extending the device's photo response up to 920 nm. Moreover, due to the good electron transport capabilities of the acceptors Y6 and PC61BM in the BHJ film, the BHJ layer also acts as the electron transport layer in the inverted PSC device. The inverted P–I–N device based on perovskite/BHJ achieved an external quantum efficiency (EQE) up to 30% in the near-infrared range. Compared to control PSCs, the short-circuit current (JSC) increased from 21.64 to 24.35 mA cm−2, resulting in a high PCE of 19.88%. Additionally, the high hydrophobic surface of the ternary layer contributes to the good long-term stability of the device. The results demonstrate that the ternary organic bulk heterojunction is an effective strategy for achieving efficient light utilization in the near-infrared region and enhancing power conversion efficiency in perovskite solar cells.

Reducing Interfacial Losses in Solution-Processed Integrated Perovskite-Organic Solar Cells.

Low bandgap organic semiconductors have been widely employed to broaden the light response range to utilize much more photons in the inverted perovskite solar cells (PSCs). However, the serious charge recombination at the heterointerface contact between perovskite and organic semiconductors usually leads to large energy loss and limits the device performance. In this work, a titanium chelate, bis(2,4-pentanedionato) titanium(IV) oxide (C10H14O5Ti), was directly used as an interlayer between the perovskite layer and organic bulk heterojunction layer for the first time. Impressively, it was found that C10H14O5Ti can not only increase the surface potential of perovskite films but also show a positive passivation effect toward the perovskite film surface. Drawing from the above function, a smoother perovskite active layer with a higher work function was realized upon the use of C10H14O5Ti. As a result, the C10H14O5Ti-modified integrated devices show lower interfacial loss and obtain the best power conversion efficiency (PCE) of up to 20.91% with a high voltage of 1.15 V. The research offers a promising strategy to minimize the interfacial loss for the preparation of high-performance perovskite solar cells.

Scaling-Up of Solution-Processable Tungsten Trioxide (WO3) Nanoparticles as a Hole Transport Layer in Inverted Organic Photovoltaics

We reported the comparative studies of the optimization of solution-processable tungsten trioxide (WO3) as a hole transporting layer (HTL) in inverted organic photovoltaics (OPVs) using spin coating, slot-die coating, and spray coating technologies for scaling-up applications. To facilitate the technology’s transition into commercial manufacturing, it is necessary to explore the role of scalable technologies for low-cost and efficient device fabrication. We investigated the role of diluting WO3 with isopropanol as an HTL in inverted OPVs to solve the issue of poor wettability of the hydrophobic surface of the PBDB-T: ITIC bulk heterojunction layer. The optimal dilution ratios of WO3 with isopropanol were 1:4, 1:4 and 1:8 with spin coating, slot-die coating and spray coating techniques, respectively. We evaluated the device performance by conducting a current density–voltage (J-V) analysis, incident photon-to-current conversion efficiency (IPCE) measurements, and ultraviolet–visible (UV-Vis) absorbance spectra for various WO3 concentrations. The J-V characteristics revealed that slot-die coating resulted in the highest performance, followed by the spray coating technology. We further investigated the impact of the annealing temperature on device performance for both slot-die- and spray-coated diluted WO3. The highest device performance was achieved at an annealing temperature of 120 °C for both coating technologies. This research offers valuable insights into the scalable fabrication of inverted OPV devices, paving the way for cost-effective and efficient large-scale production.

Toward Air Stability of Efficient Filter‐Free Band‐Selective Organic Photodetectors Based on Bulk Heterojunction: Avoiding Environmental Degradation with Atomic Layer Deposition Encapsulation

To detect the band‐specific optical signals used in many fields, it is necessary to develop spectrally selective photodetection. For such wavelength‐selective photodetection or color discrimination, organic photodetectors (OPDs) can offer significant benefits as low temperature and solution processability, chemical versatility, and specific spectral detection range. However, to avoid commonly used filters, the design of a narrowing approach that simultaneously achieves a selective detection range with a bandwidth of less than 50 nm and a spectral response of over 20% remains a challenge. OPDs based on charge‐collection‐narrowing principle can provide these features. In this approach, the detection window can be selected to match the absorption onset of the junction materials used in the bulk heterojunction layer. Herein, filter‐free band‐selective OPDs are realized based on PM6:PC70BM blends as state of the art. Fine adjustment over a bandwidth of 42 nm to be highly selective at 677 nm with a quantum efficiency of 48.4% under an inverse low bias of −2 V is reached. In addition, using a noninvasive and nondestructive encapsulation technique, it is demonstrated that these OPDs fully retain their high selective peak after 30 days storage in air.

Controlling Electron/Hole Recombination in Near-Infrared Polymer Phototransistors through an Insulation Medium: A Pathway to Ultrahigh Photosensitivity.

In near-infrared (NIR) polymer phototransistors, the photoresponse is proportional to the turn-on voltage shift (ΔVth). Due to the narrow band gap of NIR polymers, the ΔVth value is usually small. However, the use of a single bulk heterojunction (BHJ) layer has a minimal effect on increasing the value of ΔVth. This is because doping with high concentrations of acceptors results in strong current traps and accelerates electron/hole recombination. In this work, a new strategy is proposed to control the recombination of electrons/holes. By doping an insulating medium made of polystyrene (PS) into BHJs, PC61BM:PS:PDPP3T-based ternary NIR phototransistors with high acceptor concentrations were prepared by using a one-step film transfer method (FTM). Compared with a PC61BM:PDPP3T-based binary device (1:1), a ternary device (1:1:1) exhibited a significant performance improvement. The ΔVth value (∼29.5 ± 1.0 V) increased by approximately 4-fold, the Iph/Idark (∼4.4 × 106) increased by a factor of 3000 to 4000-fold, and the dark current decreased by 2-3 orders of magnitude (@ Vg = 0 V). Additionally, the ternary devices demonstrated excellent performance across a wide ternary ratio range (1:1:1 to 4:2:1).

Design and Numerical Investigation of CsPbI3/CsSn0.5Ge0.5I3 Double‐Absorption‐Layer Heterojunction Perovskite Solar Cells Based on SCAPS‐1D

CsPbI3 material has obvious advantages in constructing stable all‐inorganic perovskite solar cells (PSCs). However, the wide bandgap (1.73 eV) of CsPbI3 cannot effectively absorb low‐energy photons, which seriously hinders its development in single‐junction solar cells. In this study, a CsPbI3/CsSn0.5Ge0.5I3 double‐absorption‐layer heterojunction PSC is constructed by SCAPS‐1D. In the results, it is shown that adding a narrow bandgap CsSn0.5Ge0.5I3 absorption layer optimizes the band structure and energy level distribution, enhancing the device's built‐in potential and spectral absorption range. The combination of different electron‐transport layers, hole‐transport layers, and perovskite layers are stimulated, ultimately identifying the optimal material for the charge‐transport layers. In addition, the effects of internal factors (thickness and defect density of the absorption layer, interface defects, and work function of the back electrode) and ambient temperature on the overall performance of the device are investigated. The optimized power conversion efficiency of the device (fluorine‐doped tin oxide/Cd0.5Zn0.5S/CsPbI3/CsSn0.5Ge0.5I3/Cu2BaSnS4/Au) reaches 31.02%. In this study, a new attempt at the construction of stable and efficient all‐inorganic heterojunction PSC is provided.