Modulation of switching current density in T-type magnetic structure through magnetic anisotropy

Abstract

We investigate magnetic field driven domain wall motion and spin-orbit torque (SOT) induced perpendicular magnetization switching of the ferrimagnetic layer in a T-type magnetic heterojunction with the structure of Pt/Co/Ta/Co81Tb19/Ta, where the bottom Co layer has in-plane magnetic anisotropy and the top Co81Tb19 layer has perpendicular magnetic anisotropy. It is found that the magnetic field driven domain wall motion and the depinning field of the Co81Tb19 layer can be effectively tuned by the thickness of the Co layer (tCo). Meanwhile, SOT-induced perpendicular magnetization switching of the Co81Tb19 layer is observed, and the critical switching current density first decreases and then increases with increasing the thickness of the Co layer. A lower critical switching current density was obtained at the optimized thickness (tCo = 1.2 nm), resulting in a 37% reduction in critical switching current density. Meanwhile, the research reveals a strong correlation between critical switching current density and magnetic anisotropy field, indicating that tuning the magnetic anisotropy is an efficient way to modulate the switching current density in a T-type magnetic structure. These results provide a new perspective on SOT manipulation and will be useful for the design of SOT-based devices.