Tunnel field effect transistors (TFETs) offer advantage of robustness against short channel effects. However, reliability issues caused by interface trap charges (ITCs) generated during the fabrication in TFET is a major concern. Thus, in this manuscript, device reliability of proposed lateral dual gate oxide (DGO) bilateral tunnelling-based Tunnel FET (BT-TFET) has been examined for the first time. In this device, gate dielectric employs dual oxide, which enhances capacitive coupling between the gate and dielectric, thus, boosting various performance parameters of the device. Observation has been made that the proposed DGO BT-TFET exhibits enhanced ION/IOFF ratio of around 1012 and reduced subthreshold swing of 7.17 mV/decade against ION/IOFF ratio of around 107 and subthreshold swing of 17.82 mV/decade exhibited by the conventional device. Device reliability of the proposed device has been examined through a comparison of the effects of positive and negative trap charges on the DC, Analogue/RF attributes, for instance electric field, transfer characteristics, cut-off frequency (fT), etc. of the proposed DGO BT-TFET and traditional single gate oxide (SGO) BT-TFET. The study reveals that positive (negative) ITCs increase (decrease) the ON-state current, fT of DGO BT-TFET and SGO BT-TFET by 37.82 % (29.62 %), 25.07 % (28 %) and 538.57 % (99.99 %), 430.76 % (96.5 %) respectively. Besides, linearity distortion parameters for instance second order voltage intercept point (VIP2), third order transconductance coefficients etc. and transient analysis have also been studied and compared for both the devices. It turns out that positive (negative) interface traps enhance (reduce) VIP2 of DGO BT-TFET and SGO BT-TFET by 4.2 % (0.81 %) and 76.3 % (81.3 %), respectively. Thus, indicating that DGO BT-TFET has enhanced resistance in terms of performance variation when compared with SGO BT-TFET for various ITCs.