Double-Gate RESURF Lateral Insulated Gate Bipolar Transistor With Built-In p-Channel MOSFET for Active Conductivity Modulation Control Throughout Drift Region

Abstract

A double-gate RESURF lateral IGBT (DGR-LIGBT) with build-in p-channel MOSFET (p-MOSFET) is proposed and studied by numerical TCAD simulations. In the conventional LIGBTs, <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {ON}}$ </tex-math></inline-formula> is reduced by conductivity modulation in drift region. However, the stored minority carriers lead to high turn-off lose ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${E}_{\text {OFF}}$ </tex-math></inline-formula> ). In the proposed DGR-LIGBT, the RESURF region is connected to the p-body via the built-in p-MOSFET. The primary gate switches the DGR-LIGBT between on- and off-states. In the on-state, a positive auxiliary gate voltage is applied to turn off the p-MOSFET; the RESURF region is disconnected from the p-body. Thus, the DGR-LIGBT works in fully modulated state and maintains a low <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {ON}}$ </tex-math></inline-formula> . Before the turn-off transient, the auxiliary gate voltage is pre-switched to a negative voltage to turn on the p-MOSFET, which electrically connects the RESURF region to the grounded p-body and extracts holes in the entire drift region. Therefore, the conductivity modulation throughout the drift region is suppressed, resulting in low <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${E}_{\text {OFF}}$ </tex-math></inline-formula> .