Earlier researches show that nonmagnetic semiconductor-metal hybrid structures exhibit a very large magnetoresistance effect, the so-called extraordinary magnetoresistance effect. Here, we designed a modified semiconductor-metal hybrid device with IVIVI configuration, where I and V represent current lead and voltage probe, respectively. In this device, applied magnetic field can lead to the current redistribution between the two output current leads. The change of the output currents reaches 62.4% under magnetic field of 5T. As a result, the magnetoresistance value is 2.4–3.7 times higher than that of the traditional semiconductor-metal hybrid device with IVVI configuration. The sensitive position dependence of magnetic bit on output current shows that this device could be potentially used as magnetic sensor.