Large-area Fabrication Research Articles

Customizing Aniline-Derived Molecular Structures to Attain beyond 22 % Efficient Inorganic Perovskite Solar Cells.

The characteristics of the soft component and the ionic-electronic nature in all-inorganic CsPbI3-xBrx perovskite typically lead to a significant number of halide vacancy defects and ions migration, resulting in a reduction in both photovoltaic efficiency and stability. Herein, we present a tailored approach in which both anion-fixation and undercoordinated-Pb passivation are achieved in situ during crystallization by employing a molecule derived from aniline, specifically 2-methoxy-5-trifluoromethylaniline (MFA), to address the above challenges. The incorporation of MFA into the perovskite film results in a pronounced inhibition of ion migration, a significant reduction in trap density, an enhancement in grain size, an extension of charge carrier lifetime, and a more favorable alignment of energy levels. These advantageous characteristics contribute to achieving a champion power conversion efficiency (PCE) of 22.14 % for the MFA-based CsPbI3-xBrx perovskite solar cells (PSCs), representing the highest efficiency reported thus far for this type of inorganic metal halide perovskite solar cells, to the best of our knowledge. Moreover, the resultant PSCs exhibits higher environmental stability and photostability. This strategy is anticipated to offer significant advantages for large-area fabrication, particularly in terms of simplicity.

Wafer-scale integration of two-dimensional perovskite oxides towards motion recognition

Two-dimensional semiconductors have shown great potential for the development of advanced intelligent optoelectronic systems. Among them, two-dimensional perovskite oxides with compelling optoelectronic performance have been thriving in high-performance photodetection. However, harsh synthesis and defect chemistry severely limit their overall performance and further large-scale heterogeneous integration. Here, we report the wafer-scale integration of highly oriented nanosheets by introducing a charge-assisted oriented assembly film-formation process and confirm its universality and scalability. The shallow-trap dominance induced by structural optimization endows the device with a distinguished performance balance, including high photosensitivity close to that of single nanosheet units and fast response speed. An integrated ultra-flexible 256-pixel device demonstrates the versatility of material-to-substrate integration and conformal imaging functionality. Moreover, the device achieves efficient recognition of multidirectional motion trajectories with an accuracy of over 99.8%. Our work provides prescient insights into the large-area fabrication and utilization of 2D perovskite oxides in advanced optoelectronics.

Fabrication of Low-Cost Porous Carbon Polypropylene Composite Sheets with High Photothermal Conversion Performance for Solar Steam Generation.

The development of absorber materials with strong light absorption properties and low-cost fabrication processes is highly significant for the application of photothermal conversion technology. In this work, a mixed powder consisting of NaCl, polypropylene (PP), and scale-like carbon flakes was ultrasonically pressed into sheets, and the NaCl was then removed by salt dissolution to obtain porous carbon polypropylene composite sheets (P-CPCS). This process is simple, green, and suitable for the low-cost, large-area fabrication of P-CPCS. P-CPCS has a well-distributed porous structure containing internal and external connected water paths. Under the dual effects of the carbon flakes and porous structure, P-CPCS shows excellent photothermal conversion performance in a broad wavelength range. P-CPCS-40 achieves a high temperature of 128 °C and a rapid heating rate of 12.4 °C/s under laser irradiation (808 nm wavelength, 1.2 W/cm2 power). When utilized for solar steam generation under 1 sun irradiation, P-CPCS-40 achieves 98.2% evaporation efficiency and a 1.81 kg m-2 h-1 evaporation rate. This performance means that P-CPCS-40 outperforms most other previously reported absorbers in terms of evaporation efficiency. The combination of carbon flakes, which provide a photothermal effect, and a porous polymer structure, which provides light-capturing properties, opens up a new strategy for desalination, sewage treatment, and other related fields.

Enhancement of photoresponse for InGaAs infrared photodetectors using plasmonic WO3-x/CsyWO3-xnanocrystals.

Fast and accurate detection of light in the near-infrared (NIR) spectral range plays a crucial role in modern society, from alleviating speed and capacity bottlenecks in optical communications to enhancing the control and safety of autonomous vehicles through NIR imaging systems. Several technological platforms are currently under investigation to improve NIR photodetection, aiming to surpass the performance of established III-V semiconductor p-i-n (PIN) junction technology. These platforms include in situ-grown inorganic nanocrystals and nanowire arrays, as well as hybrid organic-inorganic materials such as graphene-perovskite heterostructures. However, challenges remain in nanocrystal and nanowire growth, large-area fabrication of high-quality 2D materials, and the fabrication of devices for practical applications. Here, we explore the potential for tailored semiconductor nanocrystals to enhance the responsivity of planar metal-semiconductor-metal (MSM) photodetectors. MSM technology offers ease of fabrication and fast response times compared to PIN detectors. We observe enhancement of the optical-to-electric conversion efficiency by up to a factor of ~2.5 through the application of plasmonically-active semiconductor nanorods and nanocrystals. We present a protocol for synthesizing and rapidly testing the performance of non-stoichiometric tungsten oxide (WO3-x) nanorods and cesium-doped tungsten oxide (CsyWO3-x) hexagonal nanoprisms prepared in colloidal suspensions and drop-cast onto photodetector surfaces. The results demonstrate the potential for a cost-effective and scalable method exploiting tailored nanocrystals to improve the performance of NIR optoelectronic devices.

Improvement of X-ray response of CZT films by post-annealing

CdZnTe (CZT) epitaxial films are promising for X-ray flat panel detectors due to their ability for large area fabrication, high absorption efficiency, and excellent detective quantum efficiency (DQE). However, challenges like image lag, ghosting, and reduced DQE due to long response times and high dark currents persist. This study introduces a novel post-in-situ annealing technique to enhance CZT film sensitivity and transient response. Results show that a brief 20 s annealing treatment increased surface Zn content, raising detector resistivity from 3.5 × 109 Ω·cm to 3.3 × 1010 Ω·cm while reducing leakage current at high voltages. This treatment also significantly reduced surface defects, improving CZT film detectors’ X-ray response time. Moreover, the electrons mobility-lifetime product (μτ)e improved from 2.30 × 10−5 cm2/V to 2.17 × 10−4 cm2/V, indicating enhanced charge carrier dynamics crucial for high-speed X-ray detection. Notably, the X-ray response sensitivity achieved a commendable 126 μC G−1· cm−2 a bias of 30 V. In conclusion, in-situ annealing represents a remarkable step forward in the development of CZT technology for X-ray flat panel imaging, addressing critical issues and potentially broadening its applications in medical and industrial imaging systems.

Photolithography-Free, Solution-Processable Perovskite Electrodes for High-Performance Organic Transistors.

Solution-processable electrodes are promising for next-generation electronics due to their simplicity, cost-effectiveness, and potential for large-area fabrication. However, current solution-processable electrodes based on conductive polymers, carbon-based compounds, and metal nanowires face challenges related to stability, patterning, and production scalability. Here we introduce a novel approach using 3D tin halide perovskites (THPs) combined with a photolithography-free solution patterning technique to fabricate solution-processed electrodes. We demonstrate the preparation of highly conductive CsSnI3 films (234.9 S cm-1) and the fabrication of patterned 35 × 35 perovskite electrode arrays on a 4-in. silicon wafer. These electrodes, used as source/drain electrodes in organic transistors, resulted in devices showing high uniformity and stability. This electrode fabrication strategy is also applicable to other 3D THPs like FASnI3 and MASnI3, showcasing versatility for diverse applications. The results highlight the feasibility and advantages of using 3D THPs as solution-processable electrodes, providing a new material system for the advancement of solution-processed electronics.

Stable and sustainable perovskite solar modules by optimizing blade coating nickel oxide deposition over 15 × 15 cm2 area

Perovskite solar cells have rapidly advanced, achieving over 26% power conversion efficiency on the laboratory scale. However, transitioning to large-scale production remains a challenge due to limitations in conventional fabrication methods like spin coating. Here, we introduce an optimized blade coating process for the scalable fabrication of large-area (15 cm × 15 cm) perovskite solar modules with a nickel oxide hole transport layer, performed in ambient air and utilizing a non-toxic solvent system. Self-assembled monolayers between the nickel oxide and perovskite layer improve the uniformity and morphology of the perovskite film. Perovskite solar modules with a 110 cm2 active area achieve a power conversion efficiency of 12.6%. Moreover, encapsulated modules retained 84% of their initial efficiency after 1,000 hours at 85 °C in air (ISOS-T-1). This study demonstrates progress in the large-scale production of perovskite solar cells that combine efficiency with long-term stability.

Examination of nonideal film growth in batch atomic layer deposition for plasma-resistant coatings

Atomic layer deposition (ALD) can be used to fabricate protective coatings including moisture barrier layers for organic light emitting diodes, anticorrosion layers for photoelectrodes, and plasma-resistant coating for semiconductor manufacturing equipment, which necessitates the deposition of large and thick ALD films via batch ALD. However, batch ALD for the fabrication of large-area and thick coatings exhibits nonideal film growth, a phenomenon that cannot solely be explained by transient concentration distribution within the deposition chamber. This paper describes the application of precursor “exposure” (in the unit of Langmuir, or Pa s), defined as the integral of concentration over time, as a metric to assess the growth per cycle (GPC) distribution under nonideal ALD conditions, demonstrating that the local GPC correlates well with the cumulative precursor exposure at that site. Consequently, this measure can effectively predict the nonuniformity (NU) distribution of film thickness and facilitate the determination of optimal operating conditions that ensure maximal uniformity of exposure. Under this condition, the intrafilm NU of ALD-grown Al2O3 film (nominal thickness 300 nm) was reduced to 1.2%, and the interfilm NU is diminished to as low as 3.3%. These values represent reductions of 40% and 45%, respectively, compared to the NU levels observed under nonideal conditions (insufficient trimethylaluminum, TMA exposure downstream). The plasma etch rate of ALD-deposited films is merely 4.3 nm/min, representing a reduction of one-half compared to films deposited under nonideal conditions (9.8 nm/min) with overload TMA exposure downstream leading to chemical vapor deposition-like reactions.

Explosive welding of TA2-SiC-AW5083 composite armor

This study investigates the use of explosive welding to encapsulate SiC between TA2 and 5083, aiming to achieve large-area, high-efficiency, and low-cost fabrication of ceramic composite armor. A new weldability window was established, and six configurations of ceramic composite armor were devised. Ten sets of experiments were conducted to explore the influence of explosive welding parameters, ceramic fracture, and different configurations of composite complate on mechanical properties, macro-deformation, welding interface morphology, and energy absorption and conversion. The research revealed that the fracture of ceramic influences the welding quality, the propagation of the blast wave, and the kinetic energy utilization of the flying plate, while the crevices between the ceramic and the groove on the base plate do not influence the welding quality. When the ceramic remains intact, the kinetic energy utilization rate of the flying plate can be calculated using the η = E1(1-A1/A)/Ef, and when the ceramic penetratively fractures, the kinetic energy utilization rate of the plate can be calculated using the η=(E1-E4) (1-A1/A)/Ef. Finally, we recommend adding a suitable interlayer as a buffer between the flying plate and the ceramic, and the static parameters for explosive welding should strictly adhere to the “Lower bound principle."By analyzing the energy conversion and absorption during the explosive welding process, the macro-deformation and mechanical properties of the composites, the interface morphology, and the level and characteristics of the ceramic fracture, the energy source of the ceramic fracture was found, and the effects of ceramic fracture and structural characteristics of composites on gap airflow, kinetic energy utilization of face plate, explosive wave propagation path, and welding quality were analyzed. Finally, we propose that the explosive welding static parameters of ceramic composite armor should strictly adhere to the " The principle of lower explosives limit."

Fabrication of arrayed V-shape micro-nano hierarchical structures for dew collection

Planer 2D nanopore arrays of porous anodic alumina can be unfolded to designed 3D arrayed micro-nano hierarchical structures by a programmed anisotropic electrochemical anodization, which consists of programed polymer masking and stepped anodization. Arrayed symmetrical and asymmetrical V-shape tiered micro grooves with nanotip-capped nanopore structures are respectively custom tailored to obtain high-efficiency dew collection. It is found that symmetrical V-shape tiered micro grooves with nanotip-capped nanopore structures show collection efficiency (36.176 ± 3.832 mg cm−2 h−1) twice as much as that of pure nanostructured surface, where the environment temperature is ∼18 °C, the relative humidity is ∼86 % and the sample temperature is ∼5 °C. Owning to the larger dew nucleation area, low solid-liquid adhesion and faster dew growth rate, the jumping micro-dews quickly gather and growth to big dews at the bottom of the V-shape tiers as the samples horizontally placed, which can easily fall off as turn the samples to vertical. Due to the simple equipment, low cost and large-area fabrication ability, these arrayed micro-nano hierarchical structures not only have potential to become high efficiency dew collector but also could be a platform for the controlled preparation of 3D complicated micro-nano structures of various materials with advanced functions.

Towards Large-Area Black Phosphorous Midwave-IR Optoelectronics

High-efficiency mid-wavelength infrared (mid-IR, 3–5 µm) optoelectronics, including light emitting diodes (LEDs) and photodetectors, are of high demand for emerging applications in spectroscopy, imaging, and gas sensing. Black phosphorus (bP) has emerged as a unique optoelectronic material for mid-IR applications with performances surpassing those of conventional III-V and II-VI semiconductors of similar bandgap. In this talk, I will present recent advancements on understanding and controlling the radiative and non-radiative recombination rates as a function of bP thickness. We observe higher photoluminescence quantum yields in bP as compared to conventional III-V and II-VI semiconductors of similar bandgaps due to the smaller Auger recombination rate. As a result, bP mid-IR LEDs with external quantum efficiency of >4% are reported, outperforming the state-of-the-art in this wavelength range. Furthermore, device encapsulation and packaging technologies are explored with extrapolated half lifetime of ~15,000 hours based on accelerated lifetime measurements. Finally, I will present strategies for large-area device fabrication and processing.

Eco-friendly and large-scale fabrication of NiMoN/Ni(OH)2/NF as highly efficient and stable alkaline hydrogen evolution reaction electrode

Bimetallic nickel-molybdenum nitride (NiMoN) catalysts have attracted great attention due to their remarkable similarity to group VIII noble metals in terms of electronic structure, good electron conductivity, and durability for the hydrogen evolution reaction (HER). However, the existing approaches for fabricating NiMoN catalysts usually entail a series of multiple steps and hazardous ammoniated ingredient. As a result, these methods are difficult to be scaled up for large-area fabrication towards industrial water splitting. Herein, a hierarchical composite NiMoN@Ni(OH)2@NF composite electrode with a sheet morphology was synthesized based on a rational combination of seawater etching and magnetron sputtering. This method is easily scalable for producing large-area electrodes with minimal pollution. The incorporation of Ni(OH)2@NF nanoarray carriers enhances the exposure of additional active sites on the NiMoN layer, thereby augmenting the electrochemically active specific surface area of the electrode.The as-synthesized NiMoN@Ni(OH)2@NF electrode demonstrates excellent HER activity, with an overpotential of 57 mV at 10 mA cm−2, and exhibits remarkable long-term catalytic stability for over 100 h at a current density of 100 mA cm−2.This study presents an eco-friendly and straightforward method for preparing large-scale transition metal nitride catalysts with high catalytic activity.

Metal assisted chemical etching derived reusable and scalable production of large-area Ag nanowire-based flexible transparent electrodes for electrochromic Zn-ion battery

To advance polydimethylsiloxane (PDMS)-supported silver nanowires (Ag NWs) based flexible and transparent electrodes (AgNWs/PDMS), innovative patterning techniques are essential for enabling large-area fabrication with cost-effective reusability features. Here, we introduce a metal assisted chemical etching (MACE) protocol for patterning Si wafers, allowing the repetitive fabrication of large-sized AgNWs/PDMS electrodes with controlled penetration depth for the first time. To the best of our knowledge, MACE technology has not previously been employed for fabricating AgNWs/PDMS electrodes. Through the careful selection of etchant, etching time, and suitably doped Si wafers (n-type and p-type), the resulting AgNWs/PDMS electrodes offer favorable optical, electrical and flexiblity characteristics. The electrodes deliver a sheet resistance of 18 Ω‧sq−1 at 88 % transmittance (550 nm) while retaining 93.18 % transmittance with only a 7 Ω‧sq−1 resistance increase after 10,000 bending cycles (3 mm). The penetration depth control offered by this method ensures impressive mechanical durability without additional post-processing. Moreover, the etched Si wafers can be reused multiple times, reducing overall costs. The sizes of AgNWs/PDMS electrodes produced using this method depend entirely on the Si wafer size, allowing scalability by employing larger wafers. As a proof-of-concept, we also demonstrate the fabrication of a robust, flexible, electrochromic zinc ion battery utilizing the AgNWs/PDMS electrodes developed in this study.

Flexible Multicavity SERS Substrate Based on Ag Nanoparticle-Decorated Aluminum Hydrous Oxide Nanoflake Array for Highly Sensitive In Situ Detection.

Flexible surface-enhanced Raman scattering (SERS) substrates are very promising to meet the needs for real-time and on-field detection in practical applications. However, high-performance flexible SERS substrates often suffer from complexity and high cost in fabrication, limiting their widespread applications. Herein, we developed a facile method to fabricate a flexible multicavity SERS substrate composed of a silver nanoparticle (AgNP)-decorated aluminum hydrous oxide nanoflake array (NFA) grown on a polydimethylsiloxane (PDMS) membrane. Strong plasmon couplings promoted by multiple nanocavities afford high-density hotspots within such a flexible AgNPs@NFA/PDMS film, boosting high SERS sensitivity with an enhancement factor (EF) of ∼1.54 × 109, and a limit of detection (LOD) of ∼7.4 × 10-13 M for rhodamine 6G (R6G) molecules. Furthermore, benefiting from the high sensitivity, high mechanical stability, and transparency of this substrate, in situ SERS detections of trace thiram and crystal violet (CV) molecules on the surface of cherry tomatoes and fish have been realized, with LODs much lower than the maximum allowable limit in food, demonstrating the great potential of such a flexible substrate in food safety monitoring. More importantly, the preparation processes are very simple and environmentally friendly, and the techniques involved are completely compatible with well-established silicon device technologies. Therefore, large-area fabrication with low cost can be readily realized, enabling the extensive applications of SERS sensors in daily life.

Controlled NiOx Defect Engineering to Harnessing Redox Reactions in Perovskite Photovoltaic Cells via Atomic Layer Deposition.

Albeit the undesirable attributes of NiOx, such as low conductivity, unmanageable defects, and redox reactions occurring at the perovskite/NiOx interface, which impede the progress in inverted perovskite solar cells (i-PSCs), it is the most favorable choice of technology for industrialization of PSCs. In this study, we propose a novel Ni vacancy defect modulate approach to leverage the conformal growth and surface self-limiting reaction characteristics of the atomic layer deposition (ALD)-fabricated NiOx by varying the O2 plasma injection time (tOE) to induce self-doping. Consequently, NiOx thin films with enhanced conductivity, an appropriate Ni3+/Ni2+ ratio, stable surface states, and ultrathinness are realized as hole-transporting layers (HTLs) in p-i-n PSCs. As a result of these improvements, ALD-NiOx-based devices exhibit the highest power conversion efficiency (PCE) of 19.86% and a fill factor (FF) of 81.86%. Notably, the optimal interfacial defects effectively suppressed the severe reaction between the perovskite and NiOx. This suppression is evidenced by the lowest decay rate observed in a harsh environment, lasting for 500 consecutive hours. The proposed approach introduces the possibility of a hierarchical distribution of defects and offers feasibility for the fabrication of large-area, uniform, and high-quality films.

Fabrication of Large-Area Nanostructures Using Cross-Nanoimprint Strategy.

Nanostructures with sufficiently large areas are necessary for the development of practical devices. Current efforts to fabricate large-area nanostructures using step-and-repeat nanoimprint lithography, however, result in either wide seams or low efficiency due to ultraviolet light leakage and the overflow of imprint resin. In this study, we propose an efficient method for large-area nanostructure fabrication using step-and-repeat nanoimprint lithography with a composite mold. The composite mold consists of a quartz support layer, a soft polydimethylsiloxane buffer layer, and multiple intermediate polymer stamps arranged in a cross pattern. The distance between the adjacent stamp pattern areas is equal to the width of the pattern area. This design combines the high imprinting precision of hard molds with the uniform large-area imprinting offered by soft molds. In this experiment, we utilized a composite mold consisting of three sub-molds combined with a cross-nanoimprint strategy to create large-area nanostructures measuring 5 mm × 30 mm on a silicon substrate, with the minimum linewidth of the structure being 100 nm. Compared with traditional step-and-flash nanoimprint lithography, the present method enhances manufacturing efficiency and generates large-area patterns with seam errors only at the micron level. This research could help advance micro-nano optics, flexible electronics, optical communication, and biomedicine studies.

Large-Area Synthesis and Fabrication of Few-Layer hBN/Monolayer RGO Heterostructures for Enhanced Contact Surface Potential.

Hexagonal boron nitride (hBN) has a property similar to that of graphene, and it has become one of the most popular materials due to its flexible physical and chemical properties for a variety of applications, especially in nanoelectronics. Enhanced properties of hBN-based heterostructures are crucial for future electronic devices. In this work, a sheet-like hBN crystal was synthesized and transferred onto SiO2/Si substrate and reduced graphene oxide (RGO)/SiO2/Si substrate. Accordingly, the hBN and hBN/RGO films are investigated by optical microscopy, X-ray diffraction, high-resolution transmission electron microscopy, Raman spectroscopy, and atomic force microscopy. The thickness of a single hBN layer is approximately 0.4 nm. A few layers of hBN stacked in large areas are mostly observed in both hBN and the hBN/RGO films. By using Kelvin probe force microscopy, it was found that the hBN/RGO heterostructure has a contact surface potential higher than that of the hBN layer. The large-scale synthesis and fabrication of hBN/RGO films could be extended to fabricate other van der Waals heterostructures.

Enhancement of third-harmonic generation in all-dielectric kite-shaped metasurfaces driven by quasi-bound states in the continuum

Abstract We develop a new all-dielectric metasurface for designing high quality-factor (Q-factor) quasi-bound states in the continuum (quasi-BICs) using asymmetry kite-shaped nanopillar arrays. The Q-factors of quasi-BICs follow the quadratic dependence on the geometry asymmetry, and meanwhile their resonant spectral profiles can be readily tuned between Fano and Lorentzian lineshapes through the interplay with the broadband magnetic dipole mode. The third-harmonic signals of quasi-BIC modes exhibit a gain from 43.4- to 634-fold enhancement between samples with an axial-length difference of 15 nm and 75 nm when reducing the numerical aperture of the illuminating objective lenses in nonlinear measurement, which is attributed to the increasing illumination spot size and the less contribution from the large oblique incident light for establishing quasi-BIC modes with high-Q spectral profile and strong near-field intensity. The silicon-based metasurfaces with their simple geometry are facile for large-area fabrication and open new possibilities for the optimization of upconversion processes to achieve efficient nonlinear devices.

Printing and Coating Techniques for Scalable Organic Photovoltaic Fabrication.

Within recent years, there has been an increased interest towards organic photovoltaics (OPVs), especially with their significant device performance reaching beyond 19% since 2022. With these advances in the device performance of laboratory-scaled OPVs, there has also been more attention directed towards using printing and coating methods that are compatible with large-scale fabrication. Though large-area (>100 cm2) OPVs have reached an efficiency of 15%, this is still behind that of laboratory-scale OPVs. There also needs to be more focus on determining strategies for improving the lifetime of OPVs that are suitable for scalable manufacturing, as well as methods for reducing material and manufacturing costs. In this paper, we compare several printing and coating methods that are employed to fabricate OPVs, with the main focus towards the deposition of the active layer. This includes a comparison of performances at laboratory (<1 cm2), small (1-10 cm2), medium (10-100 cm2), and large (>100 cm2) active area fabrications, encompassing devices that use scalable printing and coating methods for only the active layer, as well as "fully printed/coated" devices. The article also compares the research focus of each of the printing and coating techniques and predicts the general direction that scalable and large-scale OPVs will head towards.

Heteroepitaxial GaAs thin-films on flexible, large-area, single-crystal-like substrates for wide-ranging optoelectronic applications

Recent advances in semiconductor based electronic devices can be attributed to the technological demands of ever increasing, application specific markets. These rapidly evolving markets for devices such as displays, wireless communication, photovoltaics, medical devices, etc. are demanding electronic devices that are increasingly thinner, smaller, lighter and flexible. High-quality, III-V epitaxial thin-films deposited on single-crystal substrates have yielded extremely high-performance, but are extremely expensive and rigid. Here we demonstrate heteroepitaxial deposition of GaAs thin-films on large-grained, single-crystal-like, biaxially-aligned, flexible, metallic substrates. We use molecular beam epitaxy (MBE) for the controlled growth of high quality GaAs layers on lattice matched Ge capped, flexible metal substrates. The structural, optical, interfacial and electrical characteristics and properties of the heteroepitaxial GaAs layers are analyzed and discussed. The results show that heteroepitaxial GaAs layers with good crystalline and optoelectronic properties can be realized for flexible, III-V based semiconductor devices. III-V materials integrated on large-grained, single-crystal-like, flexible, metallic substrates offer a potential route towards fabrication of large-area, high-performance electronic devices.