The Zirconium Dioxide (ZrO2) dopedCopper Oxide (CuO) thick films were fabricated on a glass substrate using the screen printing method, employing sintering temperatures of 500 °C, 550 °C, and 600 °C. The structural characteristics of the doped films were analyzed through Scanning Electron Microscopy (SEM), X-Ray Powder Diffraction (XRD), and Fourier Transform Infrared Spectroscopy (FTIR). Additionally, the optical properties were assessed via UV–Vis spectroscopy and Photoluminescence (PL) spectroscopy. SEM investigations revealed an increase in nanoparticle grain size and agglomeration as the sintering temperature was raised. XRD results exhibited the polycrystalline nature of the films and an augmented intensity of the monoclinic phase of ZrO2, with a noticeable preferred orientation along the (111) plane, which increased with higher sintering temperatures. FTIR analysis demonstrated slight peak shifts and increased sharpness as the sintering temperature was elevated. UV–Vis spectroscopy indicated a redshift in the reflectance edge, with the band gap transitioning from 3.81 eV (at 500 °C) to 3.65 eV (at 600 °C). These findings were corroborated by PL spectroscopy, which exhibited a redshift in the band emission as the sintering temperature increased. Electrical conductivity displayed semiconducting behavior of the sample. These investigations collectively indicate that elevating the sintering temperature leads to enhanced crystallinity in the films and a reduction in lattice deformations within the composite materials which is crucial for applications in large-area and flexible electronics.