Highly sensitive hybrid silicon carbonitride piezoresistive sensors enabled by coupling piezoelectric effect

Abstract

Piezoresistive sensors with high working temperature and excellent sensitivity are highly desired for in-situ measuring pressure in various high temperature applications. Polymer-derived silicon carbonitrides (SiCNs) are a novel class of materials with excellent stability and piezoresistive performance at high temperature, yet challenging to build to meet the rapid growth of large-area electronics. This work demonstrates a thin and highly sensitive hybrid SiCN piezoresistive films enabled by coupling piezoelectric effect of Al-doped ZnO (AZO). The hybrid thin films with the optimal nano-domain phase of SiCN features ultrahigh gauge factors of 6518 to 31,195 upon various compressive stresses, which are significantly larger than those of single-layer SiCN and other existing piezoresistive materials. First-principles calculations reveal that the charges from AZO layer accumulate and move toward the carbon clusters in SiCN under compressive stress, resulting in greater tunneling currents between carbon clusters and more significant piezoresistive effect. Moreover, superior piezoresistive performance of the optimal hybrid system can be characterized by atomic-scale binding energy and band gap change, as formation of the hybrid structure facilitates interfacial charge separation and increases density of electron at conduction band. This work opens an avenue for improving sensitivity of piezoresistive sensors by effective coupling of piezoelectric materials.