La0.7Sr0.3MnO3 Research Articles

Understanding delamination behavior of air electrode in solid oxide electrolysis cells through in situ monitoring of internal oxygen partial pressure

In this study, we monitored the development of internal pO2 in solid oxide electrolysis cells (SOECs) in situ using an embedded probe and a reference electrode. Three types of air electrode cells were compared: LSM (La0.8Sr0.2MnO3−δ) + YSZ (Y0.08Zr0.92O2−δ), LSCF (La0.6Sr0.4Co0.2Fe0.8O3−δ) + GDC (Gd-doped ceria) and LSM + GdCeScSZ ((Gd2O3)0.005(CeO2)0.005(Sc2O3)0.1(ZrO2)0.89). The rate of pO2 increase with the increase in current density was highest in the LSM + YSZ cell, reaching ∼32201 atm at 0.6 A cm−2, resulting in air electrode delamination and intergranular fractures. This physically developed delamination with high pO2 is akin to catastrophic failure, accelerating degradation. The LSCF + GDC cells exhibited a maximum pO2 of ∼12.25 atm and operated stably without increasing pO2 or delamination. In the LSM + GdCeScSZ cells, internal pO2 was substantially suppressed to ∼10−3 atm, with a degradation rate comparable to that of the LSCF + GDC cell. However, the air electrode delaminated without intergranular fractures. This chemically developed delamination without high internal pO2 does not significantly accelerate degradation. These results indicate that the delamination mechanism may vary even with the same LSM electrode, depending on its ionic conduction characteristics.

Increasing the sensitivity of an amperometric, YSZ-based total-NOx sensor by opening the gas diffusion pathways in a porous La0.8Sr0.2MnO3 electrode

To boost the sensitivity of amperometric total-NOx sensors, polymethyl methacrylate (PMMA) was employed as a pore former to open up the diffusion pathways of a porous La0.8Sr0.2MnO3 (LSM) sensing electrode (SE). The porous LSM was characterized through scanning electron microscopy and mercury intrusion porosimetry, and its sensing performance was evaluated in a test setup based on a dynamic gas mixer. The results indicate that adding PMMA increases the gas diffusion pathway and the porosity of SE. Specifically, the NOx sensitivity increased from 4.794 to 6.516 μA/decade, then decreased to 2.428 μA/decade, with the increase in the SE porosity. These results suggest that high SE porosity benefits gas diffusion but diminishes the three-phase boundary for electrochemical reactions. Meanwhile, the sensor exhibited remarkable selectivity and consistency, which means that opening the gas diffusion pathway using PMMA is a reliable technology for high-temperature NOx sensors.

Defect induced polar distortion in SrMnO3 thin films

Defect engineering in perovskite oxides enables novel functionalities by inducing and controlling lattice defects, effectively breaking lattice symmetry, stabilizing polar states and inducing ferroelectricity in non-polar/paraelectric or ferro/antiferromagnetic oxide thin films. A polar state can be stabilized in SrMnO3 (SMO) thin films by displacing Mn ions. However, conventional epitaxial strain engineering necessitates deposition on diverse single crystalline substrates with varying misfit strains and optimization of thin film growth conditions, posing challenges in achieving polar states in SMO thin films. In this study, polar distortion was achieved by inducing defects in SMO epitaxial thin films grown on Pb(Mg1/3Nb2/3)O3-PbTiO3 substrates La0.7Sr0.3MnO3 (LSMO) electrode. Scanning transmission electron microscopy analysis revealed that Mn ion displacement and the c/a ratio increased on moving from the SMO/LSMO interface to the top surface of the SMO film. Electron energy loss spectroscopy depth profiles revealed variations in oxygen stoichiometry and Mn3+/Mn4+ ratio across the cross section of the SMO film. Consequently, a polar state was stabilized through strain gradient induced by defect chemistry in SMO thin films. Our study demonstrates that defect engineering can be effectively utilized in the realization of electric field-controlled magnetic devices at room temperature.

The effect of interface strains induced by various ferroelectric top layers on the magnetoelectric behavior for bilayer heterostructure

Using PLD technique, highly c-axis oriented bilayer heterostructures based on ferromagnetic La0.7Sr0.3MnO3 (LSMO) have been epitaxially grown on (001) oriented LaAlO3 (LAO) substrates with ferroelectric layers of PbZr0.52Ti0.48O3 (PZT) or BaTiO3 (BTO). The interface strain values at the top of LSMO are influenced by distinct ferroelectric top layers, which results in a slightly weaker saturation magnetization strength in the PZT/LSMO heterostructure than that in the BTO/LSMO heterostructure. The correlation between the frequency of the AC excitation magnetic field and the variation of the ME voltage coefficient (αE) indicates that both heterostructures present strong room-temperature dynamic ME coupling behavior. The αE value increases rapidly with increasing frequency before stabilizing. These two bilayer multiferroic heterostructures also exhibit the self-biased ME coupling effect, as demonstrated by the variations in the αE value with the DC bias magnetic field strength.

Engineering exchange bias at the interface of self-polarized ultrathin ferroelectric BaTiO3 and ferromagnetic La0.67Sr0.33MnO3

We investigate the emergence and optimization of conventional exchange bias (EB) in ultrathin (<10 nm) ferroelectric (FE) BaTiO3 (BTO)/ferromagnetic (FM) La0.67Sr0.33MnO3 (LSMO) epitaxial bilayers without an antiferromagnetic (AFM) material. The EB originates from the electronic orbital reconstruction at the FE-FM interface due to the ferroelectric polarization. We achieve maximum EB of approximately 42 Oe with single-domain polarization in nine-unit-cell-thick BTO, setting the BTO thickness above the critical threshold for ferroelectricity yet below the thickness of strain relaxation and multidomain breakdown. Furthermore, the LSMO layer needs to be thick enough to sustain both the FM layer and polarization-induced AFM spin configuration at the LSMO/BTO interface, yet as thin as possible to enable the EB loop shift. The temperature, training, field, and thickness dependence of the EB confirm that the LSMO/BTO interface exhibits conventional EB despite its unconventional origin. Using x-ray magnetic circular dichroism, scanning transmission electron microscopy, and density-functional-theory calculations, we confirm that the macroscopic EB effect originates from the interfacial AFM spin configuration in LSMO driven by FE-induced -orbital modifications in interfacial Mn ions. Thus, we engineer strong interfacial EB coupling in artificial multiferroics without a conventional AFM material by controlling FE polarization, highlighting the potential for advanced spintronic applications. Published by the American Physical Society 2024

Triplet supercurrents in lateral Josephson junctions with a half-metallic ferromagnet

In the area of superconducting spintronics, spin-triplet supercurrents in half-metallic ferromagnets (HMFs) could yield dissipationless spin transport over large distances and high current density. Promising among the HMFs is the perovskite oxide La0.7Sr0.3MnO3 (LSMO), and recent studies in combination with the high-Tc superconductor YBa2Cu3O7, or the conventional superconductor NbTi, showed long-range effects. Here we focus on two issues that as yet have received less attention: the value of the critical current in the HMF in the limit of a very small electrode distance (20 nm) and the nature of the spin-triplet generator. We use lateral junctions shaped as a bar, square, and disk, and find high supercurrent densities of the order of 1011 A/m2, pointing to an efficient triplet generation mechanism. This is surprising in the sense that no magnetic inhomogeneity is purposely built in, as is done in conventional metal triplet junctions. Furthermore, from the magnetic field dependence of the critical current interference patterns, we find a uniform supercurrent distribution in bar-shaped devices, but one more constricted to the rim in disk devices, which is an expected consequence of the geometry. We also analyze the temperature dependence of the critical current and find the quadratic dependence that was predicted in the limit of small junction lengths. From studying the NbTi/LSMO interface with scanning electron transmission microscopy, we conclude that the magnetic inhomogeneity required for triplet generation resides in the LSMO layer adjacent to the interface. Published by the American Physical Society 2024

Spin conduction and interfacial effects in La2/3Sr1/3MnO3/NiO/Pt heterostructures

In this work we report on the generation and transport of pure spin currents in La2/3Sr1/3MnO3(LSMO)/NiO/Pt heterostructures. Pure spin currents, generated by means of spin pumping in the LSMO layer, are transmitted through the NiO layer and detected by measuring the transverse voltage signal generated by the inverse spin Hall effect (ISHE) in the Pt layer. The spin current transmission is studied as a function of the NiO thickness and temperature. NiO layers grown at room temperature are polycrystalline and their microstructural and magnetic features clearly depend on thickness. Scanning transmission electron microscopy techniques revealed that homogeneous conformal coating of the LSMO layer is only achieved for NiO layer thicknesses above about 2 nm. Below this critical thickness the NiO layer is discontinuous and its main role would be to disturb the LSMO/Pt interface causing it to behave as something similar to an insulating barrier. Magnetic measurements indicate that NiO layers are paramagnetic (PM) well below room temperature. In agreement with these observations, the amplitude of the ISHE voltage signal decreases monotonically on lowering temperature and makes evident that there are two spin conduction regimes as a function of the NiO layer thickness with different spin diffusion lengths. For thin discontinuous NiO layers a spin diffusion length of λSDL≈0.8 nm is found, which is slightly larger than typical values found for insulating barriers, but definitely smaller than λSDL≈3.8 nm found for NiO layer thickness above 2 nm. The latter being similar to λSDL previously reported for epitaxial NiO layers. Our findings indicate that inserting a PM NiO insulating layer of optimal thickness improves the spin transparency of the LSMO/Pt interface. Additionally, the results suggest that spin conduction through the NiO layer is likely driven by magnetic correlations and short-range thermal magnons.

Interface defect state induced spin injection in organic magnetic tunnel junctions

This article analytically explores defect assisted spin injection in organic magnetic tunnel junctions (MTJs) [x/rubrene/Co, x = La2O3, LaMnO3, La0.7Ca0.3MnO3 (LCMO), La0.7Sr0.3MnO3 (LSMO)] employing nonequilibrium Green’s function (NEGF). Spin precession at ferromagnet (FM)/organic semiconductor (OSC) interface defect states have been considered while modeling the MTJ devices. Variations in voltage dependent parallel (RP) and antiparallel (RAP) resistances have been attributed to modified spin dependent scattering at modified spin resolved density of states of magnetic electrodes. Moreover, change in distribution of defect state depths at a spin injection interface has also been observed to modify RP/RAP, and hence, tunnel magnetoresistance (TMR) across the devices. Localization of defect state distribution due to a high spin split band may have resulted in large TMR for La2O3 devices. Nonlinear spin transfer torque (STT) in devices other than LSMO indicates compensation of spin damping, resulting in a high TMR response across the devices. Hence, the localization of defect state distribution and the choice of magnetic electrodes with high spin split bands may be exercised to realize spintronic devices for low power spin memory applications.

Variation of Gilbert damping constant via interface induced magnetic anisotropy in LSMO/PMN-PT heterostructures

The field of spintronics is emerging at blistering pace due to its promising room-temperature applications in low-power logic-based devices. In this work, we investigate the suitability of ferromagnetic (FM) La0.7Sr0.3MnO3 (LSMO) thin film/ferroelectric (FE) Pb(Mg0.33Nb0.67)O3-PbTiO3 (PMN-PT) heterostructures for spintronic device applications through characterizing the static and dynamic magnetic properties. Due to the magnetoelastic coupling at the interface, LSMO/PMN-PT(001) is found to exhibit a 4-fold symmetry of magnetic anisotropy, while LSMO/PMN-PT(111) shows isotropic behavior at room temperature. The direction dependent Gilbert damping constant (α) estimated for the LSMO/PMN-PT(001) sample clearly shows that its values are smaller along the magnetically hard axis than along the easy axis, while no significant variation is observed for the LSMO/PMN-PT(111) sample. The electric field induced variation of α also demonstrate that the Gilbert damping is closely related to the magnetic anisotropy. The present results clearly indicate that it will be possible to realize electric field controlled spin dynamics in FM/FEs to develop futuristic spintronic devices.

Facile combustion synthesis of Granular-like La1-xSrxMnO3 Perovskites as electrode material for supercapacitor application

This study focuses on synthesizing a series of perovskite-type La1-xSrxMnO3 materials using a solution combustion method to investigate the impact of varying concentrations of La and Sr. The samples were prepared with different La and Sr concentrations (La1-xSrxMnO3, X = 0, 0.2, 0.4, 0.6, and 0.8) and labeled as LSMO-2 (La0.8Sr0.2MnO3), LSMO-3 (La0.6Sr0.4MnO3), LSMO-4 (La0.4Sr0.6MnO3), LSMO-5 (La0.2Sr0.8MnO3. The structural, morphological, and compositional characteristics of the synthesized electrodes were thoroughly analyzed. X-ray diffraction (XRD) confirmed the formation of a rhombohedral structure with an R-3c space group, while Fourier-transform infrared spectroscopy (FT-IR) verified the presence of all functional groups in the samples. Field emission scanning electron microscopy (FE-SEM) revealed a cluster of nanopowder morphology, and compositional analysis further validated the formation of the prepared samples. The electrodes were then screen-printed onto Ni-foam and evaluated for their electrochemical performance. Notably, the La1-xSrxMnO3 electrode demonstrated a high specific capacitance of 1271.5 F/g at a current density of 10 mA/cm2 and maintained 83.45 % cyclic stability after 10,000 cycles. Moreover, the power law was employed to investigate the charge storage mechanism of the LMSO-4 electrode. To assess the practical application potential of the La1-xSrxMnO3 electrode, a solid-state supercapacitor device was fabricated, and its performance was investigated. The device achieved a maximum specific capacitance of 206 F/g at 5 mA, with an energy density of 16 Wh/kg and a power density of 2400 W/kg, retaining 94 % of its performance after 5000 cycles. Overall, La1-xSrxMnO3 electrodes show great promise as materials for supercapacitor applications due to their impressive electrochemical properties.

Hydrothermal synthesis of La0.5Sr0.5MnO3 nanostructures for enhanced CO oxidation

This study focuses on the synthesis and characterization of La0.5Sr0.5MnO3 (LSMO) perovskite nanostructures via the hydrothermal method and their catalytic performance evaluation in CO oxidation. Structural analysis using techniques like XRD, FE-SEM, FTIR, and Raman spectroscopy analysis verified the development of LSMO nanostructures exhibiting a rhombohedral phase configuration. The catalytic activity of the annealed LSMO nanostructures was assessed, demonstrating significant CO conversion efficiency attributed to structural modifications enhancing catalytic performance. These findings highlight the potential of LSMO perovskite nanostructures as efficient catalysts for CO oxidation.

Isothermal magnetization and magnetoresistive variations in trilayer (La2/3Sr1/3MnO3/γ-Fe2O3/La2/3Sr1/3MnO3) hetero-structure

We report the magnetic field dependent magnetization and magnetoresistance (MR) properties of La2/3Sr1/3MnO3 (LSMO)/ γ -Fe2O3/LSMO trilayer heterostructure and single layer LSMO film grown on SiO2/Si (100) substrates utilizing Pulsed Laser Deposition technique. The metal- insulator-metal configuration is a magnetic tunnel junction topology, which is a parallel network of two metallic layers (LSMO) and one insulating layer ( γ -Fe2O3) in current-in-plane (CIP) geometry. The intrinsically inhomogeneous polycrystalline trilayer film shows much lower (almost half ) coercivity, compared to single layer LSMO film. The MR-H [MR = (ρ (H)-ρ (0))/ρ (0)] behavior of the films is studied under two regimes namely, Low Field Magnetoresistance (LFMR) and High Field Magnetoresistance (HFMR) at 5 K and 300 K in the field range of 0–7 T. Several equations were developed to simulate the experimental MR-H data of the studied samples. For both the films, in the LFMR region (0 T < H ≤ 1 T @ 5 K), the variation in MR exhibits a linear increase with H, followed by a logarithmic behavior in the HFMR region (1 T < H ≤ 7 T @ 5 K). For the trilayer film in CIP geometry, a negative MR of 16% is achieved at 5 K and 1 T field conditions, while LSMO single layer shows a negative MR of 13% at same temperature and field conditions. The MR obtained at high field (7 T) for both the films is quantitatively equal with a value of 38% @ 5 K and 15% @ 300 K. We obtained significantly better MR-H results for the trilayer in current-perpendicular-to-plane (CPP) configuration, where the two metallic layers and an insulating layer are in series. In the CPP configuration, MR is 21% @ 5 K and 1 T field, while it reached to 44% at 5 K and 7 T field. At room temperature, the trilayer heterostructure shows MR of 17% at 7 T field condition. At a higher field of 9 T, trilayer film in CPP mode exhibits MR value of 48% @ 5 K and 23% @ 300 K. Further, the anti-parallel and parallel magnetization states of the MIM device are well manifested in CIP and CPP geometries.

Tunable magnetic switching behavior in La0.7Sr0.3MnO3/PbTiO3 multilayers

Tuning magnetic switching behavior and related magnetic configuration of transition metal oxides (TMOs) is critical for realizing multifunctional materials and devices. In this study, we manipulated the magnetic switching behavior through interface engineering by introducing ferroelectric PbTiO3 (PTO) to form La0.7Sr0.3MnO3 (LSMO)/PTO multilayers. Both the normal hysteresis loop (NHL) and the inverted hysteresis loop (IHL) could be tuned by changing the PTO thickness. All multilayers displayed a transition from NHL to IHL with increasing temperature, and the transition temperature increased with the insertion of the PTO layer or increasing thickness of the PTO. In addition, it was found that the increase in the Curie temperature (Tc) and saturation magnetization (Ms), as well as the decrease in the coercive field (Hc) and exchange bias field (Heb) with a reduction in the thickness of the PTO, is possibly related to the interface phase. This study illustrates the influence of the ferroelectric PTO thickness on the magnetic switching behavior and related magnetic configuration in LSMO, which is possibly driven by the unscreened depolarization charge and oxygen octahedral tilting. This finding may benefit the application of TMOs in multifunctional memory devices.

Multilevel magnetoresistance states in La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 heterostructure grown on MgO

Magnetic tunnel junction (MTJ) is one of the cornerstones of modern information technologies. Bringing MTJ's operation beyond the conventional binary regime, enabled by tunneling magnetoresistance (TMR) effect, is highly promising for prospective memory technologies and neuromorphic hardware development. In this paper, we demonstrate multilevel magnetoresistance states in an all-perovskite-oxide La0.7Sr0.3MnO3 (LSMO)/BaTiO3/LSMO heterostructure grown on MgO substrates. Unlike traditional TMR, we observe four distinct regions of increased magnetoresistance, which result in three magnetic field-induced resistance states in total. We show that the observed phenomenon arises from the low-field magnetoresistance effect, which occurs in the two epitaxial LSMO layers, independently and at different values of the magnetic field. The effect is well simulated by a model based on the presence of structural defects and non-uniform deformations in the LSMO layers, induced by the large lattice mismatch of the LSMO with the MgO substrate. We believe that our findings contribute to the understanding of complex magnetoresistance effects in MTJs and can be taken into consideration for the design of multi-bit memory cells or neuromorphic devices.

Strain-Induced Robust Exchange Bias Effect in Epitaxial La0.7Sr0.3MnO3/LaFeO3 Bilayers.

The ground state of correlated electrons in complex oxide films can be controlled by applying epitaxial strain, offering the potential to produce unexpected phenomena applicable to modern spintronic devices. In this study, we demonstrate that substrate-induced strain strongly affects the coupling mode of interfacial magnetic moments in a ferromagnetic (FM)/antiferromagnetic (AFM) system. In an epitaxial bilayer comprising AFM LaFeO3 (LFO) and FM La0.7Sr0.3MnO3 (LSMO), samples grown on a LaAlO3 (LAO) substrate exhibit a larger exchange bias field than those grown on a SrTiO3 substrate. Our results indicate a transition in the alignment of magnetic moments from perpendicular to collinear due to the large compressive strain exerted by the LAO substrate. Collinear magnetic moments at the LSMO/LFO interface generate strong exchange coupling, leading to a considerable exchange bias effect. Thus, our findings provide a method for tailoring and manipulating the orientations of magnetic moments at the FM/AFM heterogeneous interface using strain engineering, thereby augmenting methods for exchange bias generation.

Unfolding the Challenges To Prepare Single Crystalline Complex Oxide Membranes by Solution Processing.

The ability to prepare single crystalline complex oxide freestanding membranes has opened a new playground to access new phases and functionalities not available when they are epitaxially bound to the substrates. The water-soluble Sr3Al2O6 (SAO) sacrificial layer approach has proven to be one of the most promising pathways to prepare a wide variety of single crystalline complex oxide membranes, typically by high vacuum deposition techniques. Here, we present solution processing, also named chemical solution deposition (CSD), as a cost-effective alternative deposition technique to prepare freestanding membranes identifying the main processing challenges and how to overcome them. In particular, we compare three different strategies based on interface and cation engineering to prepare CSD (00l)-oriented BiFeO3 (BFO) membranes. First, BFO is deposited directly on SAO but forms a nanocomposite of Sr-Al-O rich nanoparticles embedded in an epitaxial BFO matrix because the Sr-O bonds react with the solvents of the BFO precursor solution. Second, the incorporation of a pulsed laser deposited La0.7Sr0.3MnO3 (LSMO) buffer layer on SAO prior to the BFO deposition prevents the massive interface reaction and subsequent formation of a nanocomposite but migration of cations from the upper layers to SAO occurs, making the sacrificial layer insoluble in water and withholding the membrane release. Finally, in the third scenario, a combination of LSMO with a more robust sacrificial layer composition, SrCa2Al2O6 (SC2AO), offers an ideal building block to obtain (001)-oriented BFO/LSMO bilayer membranes with a high-quality interface that can be successfully transferred to both flexible and rigid host substrates. Ferroelectric fingerprints are identified in the BFO film prior and after membrane release. These results show the feasibility to use CSD as alternative deposition technique to prepare single crystalline complex oxide membranes widening the range of available phases and functionalities for next-generation electronic devices.

Voltage-Driven Fluorine Motion for Novel Organic Spintronic Memristor.

Integrating tunneling magnetoresistance (TMR) effect in memristors is a long-term aspiration because it allows to realize multifunctional devices, such as multi-state memory and tunable plasticity for synaptic function. However, the reported TMR in different multiferroic tunnel junctions is limited to 100%. This work demonstrates a giant TMR of -266% in La0.6Sr0.4MnO3(LSMO)/poly(vinylidene fluoride)(PVDF)/Co memristor with thin organic barrier. Different from the ferroelectricity-based memristors, this work discovers that the voltage-driven florine (F) motion in the junction generates a huge reversible resistivity change up to 106% with nanosecond (ns) timescale. Removing F from PVDF layer suppresses the dipole field in the tunneling barrier, thereby significantly enhances the TMR. Furthermore, the TMR can be tuned by different polarizing voltage due to the strong modification of spin-polarization at the LSMO/PVDF interface upon F doping. Combining of high TMR in the organic memristor paves the way to develop high-performance multifunctional devices for storage and neuromorphic applications.

Optical constants and thickness determination of La[formula omitted]Sr[formula omitted]MnO3 thin films on Nb:SrTiO3 substrates by spectro-ellipsometry: Combination of optical and X-ray techniques

40 nm thick La2/3Sr1/3MnO3 (LSMO) thin films were epitaxially grown by Pulsed Laser Deposition (PLD) onto niobium doped SrTiO3 (Nb:STO) substrates, with different Nb concentration from 0.01%wt to 0.5%wt. The optical characterization of the heterostructures by spectroscopic ellipsometry enables us to extract the optical constants of the manganite heteroepitaxial layer at room temperature. Performing spectrophotometry in the same wavelength range brings a useful cross-validation of the extracted results. In addition, the thickness evaluation of the LSMO layer by spectro-ellipsometry is further validated by both High Resolution X-ray diffraction and X-ray reflectivity, as well as a Transmission Electron Microscopy cross section, taken as a physical reference. This study validates quantitatively the spectro-ellipsometry as a suitable routine tool to measure accurately both thickness and complex refractive index of the LSMO thin film, picturing their peculiar electrical behaviour between both metallic and insulating phases. The relative error on the thickness measurement between X-ray and ellipsometry is less than 5%. The LSMO complex refractive index enabled also a simultaneous estimation of further material properties, such as the optical gap ωg or the mass density ρm, determined with less than 1.5% relative error compared to X-ray reflectivity results.

Control of Magnetic Shape Anisotropy by Nanopillar Dimensionality in Vertically Aligned Nanocomposites.

Perpendicular magnetic anisotropy forms the foundation of the current data storage technology. However, there is an ever-increasing demand for higher density data storage, faster read-write access times, and lower power consuming storage devices, which requires new materials to reduce the switching current, improve bit-to-bit distributions, and improve reliability of writing with scalability below 10 nm. Here, vertically aligned nanocomposites (VANs) composed of self-assembled ferromagnetic La0.7Sr0.3MnO3 (LSMO) nanopillars in a surrounding ZnO matrix are investigated for controllable magnetic anisotropy. Confinement of LSMO into nanopillar dimensions down to 15 nm in such VAN films aligns the magnetic easy axis along the out-of-plane (i.e., perpendicular) direction, in strong contrast to the typical in-plane easy axis for strained, phase pure LSMO thin films. The dominant contribution to the magnetic anisotropy in these (LSMO)0.1(ZnO)0.9 VAN films comes from the shape of the nanopillars, while the epitaxial strain at the vertical LSMO:ZnO interfaces exhibits a negligible effect. These VAN films with their large, out-of-plane remnant magnetization of 2.6 μB/Mn and bit density of 0.77 Tbits/inch2 offer an interesting strategy for enhanced data storage applications.

Edge dislocation with [001] [formula omitted] induced positive magnetoresistance in BaTiO3/La0.66Sr0.33MnO3 heterostructure

The magnetoresistance (MR) effect holds immense potential for applications in various fields, including but not limited to storage and sensing. Manganese oxide has garnered significant attention due to its colossal magnetoresistance characteristics. Investigating the effects of the complex magnetic interactions on the magnetism and transport enables a better understanding of magnetic materials. La0.66Sr0.33MnO3 (LSMO) manganese oxides typically exhibiting negative MR as a result of magnetic field-induced spin order, while positive MR typically occurs in systems with spin-orbit coupling (SOC) or P-N junctions. In this work, the magnetic and transport properties of BaTiO3 (BTO)/LSMO heterostructure were studied. By introducing edge dislocation with [001] b→ (burgers vector) in BTO, the c-axis lattice constant is increased, resulting in positive MR in LSMO, which could be modulated by the magnetic field history and the annealing temperature. The nonlinear magnetic order induced by antiferromagnetism at the interface is proposed to cause the positive MR. Finally, the influence of ferroelectric layer on MR could be controlled by the ferroelectric BTO film. The increase in the large lattice constant and the observed variations in MR under magnetic field and annealing temperature provide valuable insights for further studies on the complex oxide.