The influence of buffer gases and pressure on the chemical composition of LICVD Cr films was investigated by X-ray photoelectron spectroscopy. Thin Cr films were deposited from Cr(CO)6 vapor by KrF excimer laser irradiation on fused quartz substrates. Analysis of films deposited in the noble gases argon and helium revealed a typical Cr concentration of about 60 at% and C and O contents of about 20 at% each. In these films both oxygen and carbon were observed to be bonded in two different forms. Chromium oxide Cr2O3 and chromium carbide Cr3C2 could be identified. The additional carbon and oxygen might be due to inserted CO. In hydrogen a highest Cr content of 72 at% was achieved and a reduction of the C concentration by about 10 at% was observed. The remaining C was bonded predominantly as carbide. The influence of additional CO during film deposition showed that gaseous CO is a considerable source of LICVD Cr film contamination.