Abstract
One pulse of a KrF excimer laser emitting radiation at a wavelength of 248 nm was used to completely fill via holes in silicon dioxide (diameter: 2 μm, depth: 1 μm) by melting a 600-nm-thick gold layer on a 100-nm-thick Cr adhesion layer. The pulse width was 23 ns full width at half-maximum (FWHM) and the pulse energy was 160 mJ, yielding a laser fluence at sample surface of ∼0.6 J/cm2. The result is a nearly planar structure.
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Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
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