Activation of Mg Acceptor in GaN : Mg with Pulsed KrF (248 nm) Excimer Laser Irradiation

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We report on the activation of Mg acceptors in Mg-doped GaN films, grown by metalorganic chemical vapor deposition, via the use of a pulsed KrF (248 nm) excimer laser irradiation. The as-grown GaN : Mg, which was irradiated by the KrF excimer laser at a laser energy density of 590 mJ/cm2 in a N2 ambient showed a hole concentration of 4.42 × 1017 cm—3. Furthermore the hole concentration in GaN : Mg, which was activated by a conventional rapid thermal annealing, was increased from 4.3 × 1017 to 9.42 × 1017 cm—3 as the result of subsequent laser irradiation. These results suggest that a pulsed KrF excimer laser irradiation can dramatically enhance the p-type conductivity of GaN : Mg by efficiently dissociating the Mg–H complexes.