Within the current piece of research, we propose a porous model of hexagonal boron nitride (h-BN) monolayer (h-BNML) through DFT calculations in order develop an anode material for KIBs. We in particular focused on the impact of the pore on the diffusion of K ions and upon the storage process. We created the porous model of the h-BNML by using a pure h-BNML structure via the removal of B atoms which mimics the formation of the pore. Based on the DFT calculations, there was no change in the original planar structure of the h-BNML after the formation of the pore. There was a dramatic change in the electronic and structural attributes of the h-BNML indie the poor based on the introduced vacancies, which allowed the K-ion to adhere effectively within the pore. Based calculations demonstrated the interaction between the K ions and the pores through electrostatic attraction. The model exhibited the ability to keep a high number of K ions at its surface without any change in the initial planar structure of h-BN, which was closely associated with an increased theoretical specific capacity, which increased with porosity. Hence, the pore formation increased the diffusion of K ions in comparison with the pure h-BNML. This can be insightful to designing enhanced anode materials for KIBs. Finally, the current work can provide insights into tailoring porous BN materials for application in KIBs.
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