In this paper, a new model for wirebond degradation during power cycling in IGBT power module is proposed. This model is based on experimental crack propagation analyses and on a plastic strain empirical law. For the experiments, two power cycling tests in switching mode under high voltage were carried out respectively with junction temperature swings of ∆ Tj=30°C and 40°C at a minimal temperature of Tj,min=55°C. The DUTs and the test conditions were chosen so that only degradations of chip top-side interconnections could occur. The on-state voltage (VCE) was measured online during the tests as an indicator of wire and metallization degradations, moreover, the samples were removed at different aging stages. The removed samples were cross-sectioned in order to observe the crack propagation evolution with cycling. Concerning the plastic strain law, we used results from literature giving the evolution of the plastic strain variation (∆εpl) with bond-wire contact crack growth. As results, this new lifetime prediction model based on a modified Paris's law for aluminium wire bonds fatigue of IGBTs shows a good fitting of the test results and is it can be used to predict the lifetime under other load conditions. Finally, the lifetime of tested IGBT modules are estimated and used to verify the effectiveness of the proposed model.