Jonscher Universal Dielectric Response Research Articles

Mechanism of hopping conduction in Be\u2013Fe\u2013Al\u2013Te\u2013O semiconducting glasses and glass\u2013ceramics

Electrical properties of beryllium-alumino-tellurite glasses and glass–ceramics doped with iron ions were studied using impedance spectroscopy. The conductivity was measured over a wide frequency range from 10 mHz to 1 MHz and the temperature range from 213 to 473 K. The D.C. conductivity values showed a correlation with the Fe-ion concentration and ratio of iron ions on different valence states in the samples. On the basis of Jonscher universal dielectric response the temperature dependence of conductivity parameters were determined and compared to theoretical models collected by Elliott. In glasses, the conduction process was found to be due to the overlap polaron tunneling while in glass–ceramics the quantum mechanical tunneling between semiconducting crystallites of iron oxides is proposed. The D.C. conductivity was found not to follow Arrhenius relation. The Schnakenberg model was used to analyze the conductivity behavior and the polaron hopping energy and disorder energy were estimated. Additionally, the correlation between alumina dissolution and basicity of the melts was observed.

Temperature dependent dielectric properties and AC conductivity studies on titanium niobium oxide (TiNb2O7) thin films

The dielectric properties of TiNb2O7 (TNO) thin films are studied in Metal-Insulator-Metal configuration (Au/TiNb2O7/Pt) devices. The temperature dependence of the dielectric dispersion and the AC conductivity behavior is strongly dependent on TNO thin film thickness. Low thickness (∼236 nm) films shows considerably less variation with temperatures than their thicker counterparts (∼480 nm). These behaviors are explained on physical basis – nearly constant loss (NCL) and Jonscher's Universal Dielectric Response (UDR). The TNO thin films show large dielectric constant (∼59–73) and moderate dielectric loss (∼0.07–0.11). The AC conductivity values of the thin films lie in the range of about (10−8 to 10−9) at 10 kHz. The thicker films show DC conductivity values which are thermally activated with an activation energy of about 0.44 eV. This is slightly higher (about 0.1 eV) than ωp in Jonscher's UDR response and this discrepancy is explained on the basis of mixed ionic electronic conduction in TNO thin films. The possible role of growth morphology in the dielectric response is also briefly mentioned.

A method of determination of electrical conduction mechanisms in complex amorphous materials

A novel approach to determine conduction mechanisms in complex amorphous materials was presented and tested on a real system. In the first step of the presented method, total electrical admittance of the material is analyzed in order to separate a couple of processes, each of which can be described by Jonscher's universal dielectric response. In the following step, a temperature dependence of dielectric response parameters of the processes is determined and compared with known models of conduction mechanisms in structural amorphous materials. Using this approach, a presence of two different conduction mechanisms describing electrical conductivity in a two-phase glass was described.

Structural characterization and electrical properties of carbon nanotubes/epoxy polymer composites

ABSTRACTThe purpose of this study is to identify the relationship between the electrical and structural characteristics of multiwalled carbon nanotubes dispersed into the polymer matrix of a resin. In a first step, the composites were characterized by small‐angle neutron scattering, which provide information about the bulk dispersion of nanotubes in the matrix and form three‐dimensional networks with a surface fractal behavior. In the second step, a dielectric and electrical study was carried out in the frequency range between 1 Hz and 10 MHz at room temperature. We have found that the electric and dielectric behavior of these composites can be described by Jonscher's universal dielectric response. We show that the critical exponents describing the concentration dependence of the conductivity and the dielectric constant, obtained in the vicinity of the percolation threshold, are in good agreement with the theoretical values. © 2016 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2017, 134, 44514.

Crystal structure, phase transition and conductivity study of two new organic – inorganic hybrids: [(CH2)7(NH3)2]X2, X = Cl/Br

Two hybrids 1,7-heptanediammonium di-halide, [(C7H20N2]X2,X = Cl/Br crystallize in monoclinic P21/c, Z = 4. [(C7H20N2]Cl2: a = 4.7838 (2) Å, b = 16.9879 (8) Å, c = 13.9476 (8) Å, β = 97.773 (2)°, V = 1203.58(10) Å3, D = 1.137 g/cm3, λ = 0.71073 Å, R = 0.052 for 1055 reflections with I > 2σ(I), T = 298(2) K. [(C7H20N2]Br2: a = 4.7952 (10) Å, b = 16.9740 (5) Å, c = 13.9281 (5) Å, β = 97.793 (2)°, V = 1203.83(6) Å3, D = 1.612 g/cm3, λ = 0.71073 Å, R = 0.03 for 1959 reflections with I > 2σ(I) T = 298(2) K. Asymmetric unit cell of [(C7H20N2]X2,X = Cl/Br, each consist of one heptane-1,7-diammonium cation and two halide anions. The organic hydrocarbon layers pack in a stacked herring-bone manner, hydrogen bonded to the halide ions. Lattice potential energy is 1568.59 kJ/mol and 1560.78 kJ/mol, and cation molar volumes are 0.295 nm3 and 0.300 nm3 for chloride and bromide respectively. DTA confirmed chain melting transitions for both hybrids below T ∼ 340 K. Dielectric and ac conductivity measurements (290 < T K < 410; 0.080 < f kHz<100) indicated higher conductivity and activation energy of bromide for T > 340 K. Cross over from Jonscher's universal dielectric response at low temperatures T < 340 K to super-linear power law for T > 340 K is observed. At high temperatures halide ion hopping in accordance with the jump relaxation model prevails.

Dielectric spectroscopy of polymer-metal composites across the percolation threshold

Polymer (polar/nonpolar)/metal composites (PMC) were prepared under different process conditions. In polar PMC, dipolar relaxation plays a predominant role below percolation threshold (fc) and anomalous low frequency dispersion (ALFD) becomes dominant above fc while ALFD is the only likely possibility for nonpolar PMC above fc. The magnitude of relaxation exponents "m", "p" and "n", evaluated from the experimental results using Jonscher's universal dielectric response (JUDR) laws, falls within the universal limit ~ [0, 1] with additional feature of strong dependence on volume fraction of conductor (f con ). The decrease in the relaxation exponent "m" with an increase of f con is directly linked with decrease in the number of dipoles of the polymer in the composite and is accompanied by a distribution of relaxation time due to increased heterogeneity of the system. The magnitude of the relaxation exponent "n" decreases at fc, due to the prevalence of Maxwell–Wagner–Sillar polarization contributed by uncorrelated electrons.

Microstructure and Dielectric Properties of Barium-vanadate Glasses

The ac and dc conductivity in barium-vanadate glasses was investigated as a function of temperature and frequency with the use of impedance spectroscopy. The topography and microstructure of glasses were investigated by the means of X-ray diffraction (XRD) and scanning electron microscopy (SEM) methods. The XRD results show that all samples are amorphous but microscopy investigation reveals that glasses with greater amount of V2O5 contain nanostructures. The influence of V2O5 quantity on dielectric properties was checked. The activation energy of dc conduction process was evaluated. On the basis of Jonscher universal dielectric response the temperature dependence of conductivity parameters were determined and compared to theoretical models collected by Elliott.

Electronic conductivity in the SiO2–PbO–Fe2O3 glass containing magnetic nanostructures

The linear impedance spectra of iron–silicate–lead glass samples were measured in the frequency range from 1 MHz to 1 MHz and in the temperature range from 153 K to 423 K. The structure was investigated by means of XRD and atomic force microscopy. Local electrical and magnetic properties of the samples were tested with the aid of electrostatic force microscopy (EFM) and magnetic force microscopy (MFM). The obtained results show that the impedance spectra of all samples exhibit one large relaxation process and some additional small relaxation is present in glass containing 20 mol% and 25 mol% Fe2O3. The AFM micrographs show that in a subset of samples some nanostructures exist. Their size, shape, and quantity depend on the amount of Fe2O3 in the composition of the glass. The samples containing an amount of 15 mol% of Fe2O3 include the biggest nanostructures which are ball-shaped. EFM and MFM micrographs show that nanostructures exhibit different electrical and magnetic behaviors than the rest of the glass matrix. On the basis of Jonscher universal dielectric response the temperature dependence of conductivity exponent s was determined and compared to theoretical models proposed by Elliott. It was found that while in the glass containing less than 15 mol% iron oxide, there is only one process responsible for conduction mechanism, the overlap polaron tunneling. In the other samples, a different conduction mechanism may coexist: quantum mechanical tunneling between semiconducting granules.

Relaxation processes in the paraelectric phase of ceramic oxides with a perovskite structure

Solid solutions of barium, strontium, and lead titanate ceramics with a perovskite structure are studied using impedance spectroscopy in the frequency range 102–106 Hz at temperatures from 20 to 450°C. The experimental data represented by the dispersion of the electric modulus are compared with the results of calculations performed for different mechanisms of the non-Debye relaxation in terms of the Havrilyak-Negami empirical formulas and the Jonscher universal dielectric response with the aim of determining a more adequate approach. The activation energy of relaxation processes in the paraelectric phase of the samples under investigation are calculated.

Dielectric Properties of Pulsed Excimer Laser Ablated BaBi2Nb2O9 Thin Films

ABSTRACTThe dielectric response of BaBi2Nb2O9 (BBN) thin films has been studied as a function of frequency over a wide range of temperatures. Both dielectric constant and loss tangent of BBN thin films showed a ‘power law’ dependence with frequency, which was analyzed using the Jonscher's universal dielectric response model. Theoretical fits were utilized to compare the experimental results and also to estimate the value of temperature dependence parameters such as n(T) and a(T) used in the Jonscher's model. The room temperature dielectric constant (ε') of the BBN thin films was 214 with a loss tangent (tanδ) of 0.04 at a frequency of 100 kHz. The films exhibited the second order dielectric phase transition from ferroelectric to paraelectric state at a temperature of 220 °C. The nature of phase transition was confirmed from the temperature dependence of dielectric constant and sponteneous polarization,respectively. The calculated Currie constant for BBN thin films was 4 × 105°C.

Generalizations of ‘‘universal dielectric response’’ and a general distribution-of-activation-energies model for dielectric and conducting systems

Three empirical equations introduced by Jonscher to represent the imaginary part of the small-signal frequency response of dielectric materials and termed ‘‘universal dielectric response’’ by him are generalized in three ways. The equations may be applied in normalized form at the impedance level as well as at the usual complex dielectric constant level, defining the response of conducting rather than dielectric materials. They are generalized to include real as well as imaginary parts where possible. A unified dielectric or conductive distribution-of-activation-energies (DAE) physical model is proposed whose predictions agree remarkably well with those of all the Jonscher universal dielectric response equations as well as with many other common dielectric response equations. The new model, unlike previous small-signal response models, leads to quantitative predictions for the temperature dependence of the power-law frequency exponent appearing in the ubiquitous constant-phase-response frequency region of the total response.