Flexible Perovskite Solar Cells (f-PSCs) are made on an ITO-coated PET substrate. SnO2 has been used as a transparent inorganic electron transporting layer (ETL), PEDOT: PSS as an organic hole transporting layer (HTL), and C H3 N H3 Pb I3 as a perovskite absorbing layer. Two configurations of the device structure have been formed, one is normal structure ITO/PET/ SnO2/C H3 N H3 Pb I3/PEDOT: PSS/Ag (n-i-p) and the other is inverted structure ITO/PET/PEDOT: PSS/C H3 N H3 Pb I3/ SnO2/Ag (p-i-n). An antisolvent (i.e. ethyl acetate) has been used to control the surface morphology of the perovskite layers during fabrication of f-PSCs. Applying antisolvent in perovskite improves carrier mobility, transport properties, and higher power conversion efficiency (PCE) achieved. This study focuses on the effects of series (Rs) and shunt resistance (Rsh) of f-PSCs on photovoltaic parameters while controlling the surface morphology of perovskite films applied on both structures. The study examines the behaviour of f-PSCs with and without the use of an antisolvent. For normal structure, PCE is found at 11.34 % for f-PSCs with antisolvent and 7.96 % for f-PSCs without antisolvent. On the other hand, inverted structures show PCE 10.36 % and 7.46 % for f-PSCs with and without antisolvent, respectively. PCE has been calculated for the f-PSCs by bending the samples about 3 0o angle and about 20 % decrease in PCE has been found. The oddity of this work is to estimate the series and shunt resistant for f-PSCs and find the cost-effective control of these parameters by controlling interfacial defects.