Isolated Gate Bipolar Transistor Research Articles

Improving Low-Frequency Digital Control in the Voltage Source Inverter for the UPS System

Today voltage source inverters (VSIs) operate with high switching frequencies (let us assume higher than 50 kHz) owing to the fast Si (Silicon) or SiC (Silicon Carbide) switching transistors. However, there are some applications, e.g., with slower switches (e.g., IGBT—Isolated Gate Bipolar Transistor) or when lower dynamic power losses are required when the switching frequency is low (let us assume about 10 kHz). The resonant frequency of the output filter is usually below 1 kHz. The measurements of Bode plots of the measurement traces of various microprocessor-controlled VSIs show that in this frequency range, the characteristics of these channels can be simply approximated through two or three switching periods delay. For the high switching frequency, it is not noticeable, but for the low frequency it can cause some oscillations in the output voltage. One of the solutions can be to use the predictor of the measured state variables based on the full-state Luenberger observer or the linear Kalman filter. Both solutions will be simulated in MATLAB/Simulink and the chosen one will be tested in the experimental VSI. The research aims to omit delays in the measurement channels for the low switching frequency by using the predictions for the measured state variables and finally increasing the gains of the controller to decrease the output voltage distortions.

Моделирование режима электрического торможения тепловоза с последовательным возбуждением коллекторных тяговых двигателей при использовании силового полупроводникового преобразователя

Purpose: To consider the structure, advantages and operating principle of a new transistor converter based on isolated gate bipolar transistors (IGBT) for diesel locomotives with commutator traction motors in the electric braking mode, as well as the implementation features of this mode on diesel locomotives. To show the functional structure of the converter automatic control system for the electric braking mode. To plot a potential braking characteristic of a diesel locomotive with a new converter. Methods: Simulation modeling of the electric braking mode using a computational mathematical model of a traction drive in the Matlab Simulink environment. Analysis of the simulation results of the traction drive operation in stationary and dynamic conditions. Comparison of the obtained braking characteristic with the existing one for 2TE25KM diesel locomotive. Results: It is established that the use of the proposed transistor traction converter in the power electrical circuit of a diesel locomotive provides axis-by-axis control of a commutator traction electric drive in the electric braking mode with series excitation of traction motors and allows to significantly increase the electric brake efficiency at low speeds. The proposed solution implements the target braking force of the locomotive in a wide range of speeds, as well as its limitations due to the electromechanical parameters of the diesel locomotive assemblies. Practical significance: It is shown that the proposed solution provides the increase of the electric brake efficiency, life extension of brake shoes and wheels of the rolling stock.

Applying ZCT to Two-Phase Boost Converter with IGBT Switches Used.

A zero-current-transition (ZCT) strategy is proposed herein. This strategy is applied to a two-phase boost converter with isolated gate bipolar transistors (IGBTs) used as main switches. However, IGBTs have a current tail during the switch-off interval. Consequently, the proposed constant-frequency ZCT strategy along with common-ground auxiliary switches is employed to decrease the switching loss generated by the current tail. Furthermore, the light-load efficiency can be upgraded by regulating the switch-off instants and switch-on times of the two auxiliary switches. Moreover, two phases are interleaved with one phase having a phase difference of 180° from the other phase, and controlled by a current-sharing controller so that the input current can be distributed between the two phases as evenly as possible. Moreover, only one current sensing circuit is required to obtain information on currents in the two main switches. Above all, the number of phases can be extended with easy control of the ZCT and current balance.

Performance analysis of multi-level high voltage direct current converter

<p class="Abstract">The conventional three-phase alternating current (AC) to direct current (DC) converter can be modified using two isolated-gate bipolar transistor (IGBT) as by-pass switches connected to tapping points on the secondary side of the transformer. This scheme yields a reduction in both harmonic contents and reactive volt-ampere absorption. This modified converter possibly eliminates the need for an on-load tap-changer on the converter transformer. The modified AC/DC converter is fully analyzed and implemented under balanced conditions using MATLAB-Simulink. The expressions of the output DC voltage are derived for different cases. The supply current harmonic contents, the reactive power absorption and the power factor have been compared for three schemes; the conventional bridge, the modified bridge using one by-pass IGBT valve and the modified bridge with two by-pass IGBT valves. </p>

Power Module Temperature in Simulation of Robotic Manufacturing Application

Abstract The paper presents a lifetime consumption estimation model of 6 degrees of freedom industrial robot arm. The primary goal of the research is to provide estimated lifetime data of semiconductor power modules of robot axis power supply circuit, providing new opportunities for cost-saving, predictive maintenance, with highly customized input for different manufacturing applications. Evaluation of thermal stress and estimation of isolated gate bipolar transistor current are completed, based on MATLAB model translating KUKA robot program code to electrical energy consumption, which is a novel approach. Energy losses are considered in the model to provide accuracy of the inverter load current. The simulation results prove that lifetime consumption depends on a robot application type, for more agile movement programs with large power amplitudes, such as handling, the degradation in power modules is significant compared to slower applications, such as gluing or welding. Various options for future development are suggested and considered in the paper.

Open-Loop Single-Phase Space State Model and Equivalent Circuit of a Non-Conventional Three-Phase Inverter

Recently, many non-conventional three-phase inverters, topologies for green energy source grid-connection systems, and electric drives have been proposed. Simplifying the inverter circuit is crucial to analyze and solve their models in order to design them. The main goal of the study is centered on obtaining a single-phase equivalent circuit and space state model from non-conventional three-phase inverters based on bidirectional direct current–direct current (DC–DC) Buck-Boost topology using isolated gate bipolar transistors (IGBT). From just one phase of the three-phase inverter, the single-phase equivalent circuit was obtained by means of Kirchhoff’s laws. The equivalent circuit operation steps were presented in order to obtain the space state model. Finally, the equivalent circuit was simulated, and experimental results with a 200 W three-phase inverter feeding a resistive, inductive, and capacitive loads were performed to confirm the theoretical and simulation analyses. The results show the state space dynamic behavior variables of single-phase and three-phase models are quite similar. Therefore, it can be concluded that the proposed circuit can be used with property to represent equivalent single-phase models of non-conventional three-phase inverters.

A Buck-Boost Transformerless DC–DC Converter Based on IGBT Modules for Fast Charge of Electric Vehicles

A transformer-less Buck-Boost direct current–direct current (DC–DC) converter in use for the fast charge of electric vehicles, based on powerful high-voltage isolated gate bipolar transistor (IGBT) modules is analyzed, designed and experimentally verified. The main advantages of this topology are: simple structure on the converter’s power stage; a wide range of the output voltage, capable of supporting contemporary vehicles’ on-board battery packs; efficiency; and power density accepted to be high enough for such a class of hard-switched converters. A precise estimation of the loss, dissipated in the converter’s basic modes of operation Buck, Boost, and Buck-Boost is presented. The analysis shows an approach of loss minimization, based on switching frequency reduction during the Buck-Boost operation mode. Such a technique guarantees stable thermal characteristics during the entire operation, i.e., battery charge cycle. As the Buck-Boost mode takes place when Buck and Boost modes cannot support the output voltage, operating as a combination of them, it can be considered as critically dependent on the characteristics of the semiconductors. With this, the necessary duty cycle and voltage range, determined with respect to the input-output voltages and power losses, require an additional study to be conducted. Additionally, the tolerance of the applied switching frequencies for the most versatile silicon-based powerful IGBT modules is analyzed and experimentally verified. Finally, several important characteristics, such as transients during switch-on and switch-off, IGBTs’ voltage tails, critical duty cycles, etc., are depicted experimentally with oscillograms, obtained by an experimental model.

New Marx Generator Architecture With a Controllable Output Based on IGBTs

In this paper, a new architecture of a high-voltage Marx pulse generator based on isolated gate bipolar transistors (IGBTs) is proposed. It allows continuous control of the output voltage by acting on the IGBTs activation time: “on-time.” The final after-charging capacitors’ voltage can be higher than the double of the input voltage. A simplified mathematical description of the system was developed in order to find a relation between the output voltage and the “On-time” (an open-loop control law). A SPICE simulation was implemented to check the expected performances and to verify the developed model. A three-stage generator was built according to the proposed structure using commercial IGBTs with a maximum output voltage of 3.6 kV. All results were compared to check and confirm the validity of the proposed architecture.

Metallic TIM Testing and Selection for IC, Power, and RF Semiconductors

Metallic TIM Testing and Selection for IC, Power, and RF Semiconductors

Experimental Efficiency Comparison Between a Direct Matrix Converter and an Indirect Matrix Converter Using Both Si IGBTs and SiC <sc>mosfet</sc>s

This paper presents an experimental efficiency comparison study between two different direct ac–ac converter topologies; a direct matrix converter and an indirect matrix converter. The evaluation is performed under variable load conditions using both discrete silicon isolated gate bipolar transistor and silicon carbide MOSFETs working at power levels up to 9 kW. Each loss measurement is carried out using two power analyzers; one placed at the input and one at the output of the converter under study. To facilitate this measurement, an output filter was necessary in addition to the normal input filter. Both converters are modulated using the same traditional symmetrical space vector approach and feature an identical input/output filter design.

Thyristor based bridge‐type fault current limiter for fault current limiting capability enhancement

This study deals with a developed thyristor based bridge-type fault current limiter (TBFCL), in which the main fault current limiting function is relegated to a limiting circuit controlled by a silicon controlled rectifier (SCR). Since SCR is a reliable power electronic switch and can be found in high ratings, the proposed TBFCL can be utilised in higher ratings in comparison with other proposed BFCLs. The TBFCL limits fault current in two steps; (i) by a fully controlled DC reactor during transient fault interval (ii) by a SCR based current limiting circuit during steady state fault interval. The TBFCL has a bridge-type DC reactor controlled by an isolated gate bipolar transistor and a current limiting circuit in parallel with the bridge controlled by a thyristor. Upon fault occurrence, the DC reactor limits increasing rate of the fault current, while the generated over voltage activates auto-triggering control circuit of the SCRs. Therefore, the fault current is limited through the SCR current limiting path and the DC reactor path is interrupted. Analysis of the proposed TBFCL is presented in detail. Simulation and experimental results verify the performance of the TBFCL.

Wavelet Entropy-Based Traction Inverter Open Switch Fault Diagnosis in High-Speed Railways

In this paper, a diagnosis plan is proposed to settle the detection and isolation problem of open switch faults in high-speed railway traction system traction inverters. Five entropy forms are discussed and compared with the traditional fault detection methods, namely, discrete wavelet transform and discrete wavelet packet transform. The traditional fault detection methods cannot efficiently detect the open switch faults in traction inverters because of the low resolution or the sudden change of the current. The performances of Wavelet Packet Energy Shannon Entropy (WPESE), Wavelet Packet Energy Tsallis Entropy (WPETE) with different non-extensive parameters, Wavelet Packet Energy Shannon Entropy with a specific sub-band (WPESE3,6), Empirical Mode Decomposition Shannon Entropy (EMDESE), and Empirical Mode Decomposition Tsallis Entropy (EMDETE) with non-extensive parameters in detecting the open switch fault are evaluated by the evaluation parameter. Comparison experiments are carried out to select the best entropy form for the traction inverter open switch fault detection. In addition, the DC component is adopted to isolate the failure Isolated Gate Bipolar Transistor (IGBT). The simulation experiments show that the proposed plan can diagnose single and simultaneous open switch faults correctly and timely.

A Novel Multiple-Frequency Resonant Inverter for Induction Heating Applications

This paper presents a novel multiple-frequency resonant inverter for induction heating (IH) applications. By adopting a center tap transformer, the proposed resonant inverter can give load switching frequency as twice as the isolated-gate bipolar transistor (IGBT) switching frequency. The structure and the operation of the proposed topology are described in order to demonstrate how the output frequency of the proposed resonant inverter is as twice as the switching frequency of IGBTs. In addition to this, the IGBTs in the proposed topology work in zero-voltage switching during turn-on phase of the switches. The new topology is verified by the experimental results using a prototype for IH applications. Moreover, increased efficiency of the proposed inverter is verified by comparison with conventional designs.

Computationally Efficient, Real-Time, and Embeddable Prognostic Techniques for Power Electronics

Power electronics are increasingly important in new generation vehicles as critical safety mechanical subsystems are being replaced with more electronic components. Hence, it is vital that the health of these power electronic components is monitored for safety and reliability on a platform. The aim of this paper is to develop a prognostic approach for predicting the remaining useful life of power electronic components. The developed algorithms must also be embeddable and computationally efficient to support on-board real-time decision making. Current state-of-the-art prognostic algorithms, notably those based on Markov models, are computationally intensive and not applicable to real-time embedded applications. In this paper, an isolated-gate bipolar transistor (IGBT) is used as a case study for prognostic development. The proposed approach is developed by analyzing failure mechanisms and statistics of IGBT degradation data obtained from an accelerated aging experiment. The approach explores various probability distributions for modeling discrete degradation profiles of the IGBT component. This allows the stochastic degradation model to be efficiently simulated, in this particular example ~1000 times more efficiently than Markov approaches.

Статистический анализ и оптимизация параметров тех­нологии изготовления биполярного транзистора с изоли­рованным затвором

The use of computer simulation, design and optimization of power electronic devices formation technological processes can significantly reduce development time, improve the accuracy of calculations, choose the best options for implementation based on strict mathematical analysis. One of the most common power electronic devices is isolated gate bipolar transistor (IGBT), which combines the advantages of MOSFET and bipolar transistor. The achievement of high requirements for these devices is only possible by optimizing device design and manufacturing process parameters. Therefore important and necessary step in the modern cycle of IC design and manufacturing is to carry out the statistical analysis. Procedure of the IGBT threshold voltage optimization was realized. Through screening experiments according to the Plackett-Burman design the most important input parameters (factors) that have the greatest impact on the output characteristic was detected. The coefficients of the approximation polynomial adequately describing the relationship between the input parameters and investigated output characteristics ware determined. Using the calculated approximation polynomial, a series of multiple, in a cycle of Monte Carlo, calculations to determine the spread of threshold voltage values at selected ranges of input parameters deviation were carried out. Combinations of input process parameters values were determined randomly by a normal distribution within a given range of changes. The procedure of IGBT process parameters optimization consist a mathematical problem of determining the value range of the input significant structural and technological parameters providing the change of the IGBT threshold voltage in a given interval. The presented results demonstrate the effectiveness of the proposed optimization techniques.

Solid-State Bipolar Marx Modulator Modeling

A mathematical model that simulates the operation of a solid-state bipolar Marx modulator topology, including the influence of parasitic capacitances is presented and discussed as a tool to analyze the circuit behavior and to assist the design engineer to select the semiconductor components and to enhance the operating performance. Simulations show good agreement with experimental results, considering a four stage circuit assembled with 1200 V isolated gate bipolar transistors and diodes, operating at 1000 V dc input voltage and 1-kHz frequency, giving 4 kV and 10-μs output pulses into several resistive loads. Results show that parasitic capacitances between Marx cells to ground can significantly load the solid-state switches, adding new operating circuit conditions.

Novel topology for DC/DC unidirectional converter for fuel cell

This study presents a new isolated DC/DC converter of full-bridge to connect a fuel cell to DC bus in a hybrid distribution generation system. This converter consists of a high-frequency transformer and a voltage booster circuit. The circuit has been designed and each isolated-gate bipolar transistor (IGBT) presents soft-switching during the whole power range of the converter. The switching losses of the IGBTs, the reverse-recovery losses of all of the diodes, and the core losses have almost been eliminated. To improve the efficiency, transformer cores and inductors have been built with material nanocrystalline. The efficiency is improved if this is compared with that of a conventional zero-voltage switching converter. Also, this converter can obtain a high-voltage gain and medium and high DC power can be converted. The analysis and switching techniques have been reported. Finally, to verify the principle of operation, a laboratory prototype of 2 kW has been performed.

500 kV全固态Marx发生器

The paper presents a 500 kV all-solid-state Marx generator adopting Z type circuit. In this Marx generator, twenty-eight isolated gate bipolar transistors(IGBTs) serial modules were utilized as controllable switches. The maximum working voltage of each IGBTs module was designed as high as 22 kV, and the repetition rate at full load condition was designed as high as 200 Hz. The ladder type pulse-forming-networks (PFNs) consisting of metallized film capacitors and wound inductors were designed as energy storage and pulse-forming components. Experimental results indicate that the Marx generator can run with 500 kV output pulses and 50 Hz repetition rate in burst-mode successfully. The peak output pulse voltage of this generator is approximately the same as that of the highest power solid-state Marx generator ever reported, while the peak current is almost twice, reaching 1 000 A. The maximum pulsed power of the generator is as high as 500 MW. As the capacitors were utilized as energy storage components, the pulse width can be adjusted from 3 s to 10 s continuously.

Conceptual design of the power supply system for the in-vessel saddle coils for MHD control in ASDEX Upgrade

In the frame of an ASDEX Upgrade enhancement, a system of active in-vessel coils (of two types, dubbed “A” and “B”) and conducting wall for MagnetoHydroDynamic (MHD) stabilization is being designed and implemented. The conceptual design of the power supply (PS) system has been worked out and extensive analyses have been performed to verify that the identified basic modules, based on a cascade topology with two IGBT (Isolated Gate Bipolar Transistor) H-bridges in series for the A units and one H-bridge for the B ones, were able to fulfil all the requirements, well within semiconductors safety operating limits. The paper summarizes the work which led to the definition of the PS requirements, describes the topologies of the selected basic units and of the overall scheme, discusses the design choices and reports the results of the numerical simulations carried out to check the overall performance.

New high-frequency linked half-bridge soft-switching PWM DC–DC converter with input DC rail side active edge resonant snubbers

This study presents a new circuit topology of the active edge resonant snubber-assisted half-bridge soft-switching PWM inverter-type DC-DC high-power converter for DC bus feeding power plants. The proposed DC-DC power converter is composed of a typical voltage source-fed half-bridge high-frequency PWM inverter with a high-frequency planar transformer link in addition to input DC busline side power semi-conductor switching devices for the PWM control scheme and parallel capacitive lossless snubbers. The operating principle of the new DC-DC converter treated here is described by using switching mode equivalent circuits, together with its unique features. All the active power switches in the half-bridge arms and input DC buslines can achieve zero current switching (ZCS) turn-on and zero voltage switching (ZVS) turn-off commutation transitions. The total turn-off switching losses of the power switches can be significantly reduced. As a result, a high-switching-frequency isolated gate bipolar transistor (IGBT) can be actually selected in the frequency range of 60-kHz under the principle of soft switching. The performance evaluations of the experimental setup are illustrated practically. The effectiveness of the new converter topology is proved for low-voltage and large-current DC-DC power supplies as DC bus feeding from a practical point of view.