Island Density Research Articles

Arsenic-flux dependence of surface morphology in InAs homoepitaxy

Surface morphology in molecular-beam epitaxy of InAs(001), (111)A, and (111)B has been studied using scanning tunneling microscopy. The surface morphologies of InAs strongly depend on substrate temperature, substrate orientation, and As/In flux ratio. The size and density of two-dimensional InAs islands on the (001) surface decreases and increases, respectively, as the As/In flux ratio is increased. On the other hand, island size (density) is increased (decreased) with the increase in As flux on (111)A and (111)B surfaces. Surface reconstructions on growing surfaces strongly affect the diffusion and incorporation kinetics of In atoms, thereby resulting in the observed surface morphologies.

Effect of stress control by growth adjustment on the edge thread dislocation density of AlN grown on the sapphire

The relationship between stress and dislocation density in MOCVD epitaxial AlN was studied. It has been found that the aluminum nitride (AlN) epitaxial layer generates tensile stress when the crystal islands are merged. By controlling the size and density of crystal islands at the end of 3D growth, the tensile stress generated during epitaxy can be effectively reduced. Mechanical calculations show that there is a linear relationship between the edge thread dislocations density of AlN and the tensile stress during growth. By controlling the stress during AlN growth below 0.1 Gpa, a high-quality AlN sample with an edge thread dislocation density of 6.31 × 107 cm−2 was obtained.

Colloidal model for nucleation and aggregation in one dimension: Accessing the interaction parameters.

Through a one-dimensional colloidal model for epitaxial growth, we characterize the nucleation and aggregation processes occurring in a gap between adjacent islands. The timescales associated with deposition, diffusion, aggregation, and nucleation inside the gap are studied in terms of the parameters defining the interaction between colloidal particles. Numerical results from molecular-dynamics (MD) simulations are compared with analytical models and good agreement is found between both data sets. The results for the timescales are used to calculate the associated rates to generate kinetic Monte Carlo (KMC) simulations, which allow exploring larger systems and longer timescales in comparison with MD simulations. The KMC simulations reproduce the global behavior of the densities of islands and monomers as well as the gap length distribution between adjacent islands.

New Insights into the Modulation of Island Density of Electrodeposits Using Pulsatile Waveforms

New Insights into the Modulation of Island Density of Electrodeposits Using Pulsatile Waveforms

Molecular beam epitaxy growth and characterization of GePb alloys

Pb based group-IV alloys such as GePb have been gaining interest as a potential alternative for infrared detectors, quantum materials, and high-speed electronic devices. Challenges remain in their growth due to the extremely low solid solubility of Pb in the Ge–Pb system. This paper reports molecular beam epitaxy growth of GePb alloy thin films on Ge(100) substrates. Effusion cells of Ge and Pb are used to control the flux ratio independently. The optimal substrate temperature is found to be near the thermocouple temperature of 300 °C based on the characterization of the grown films using high-resolution x-ray diffraction. A large change in the Ge:Pb beam equivalent pressure ratio from 10:1 to 1:1 results in only a minimal increase of the Pb composition from 0.74% to 2.84% as estimated from Raman spectroscopy and Rutherford backscattering spectrometry. Scanning electron microscopy images show a large volume of Pb islands on the surface that form into either long trapezoidal rods or uniform droplets, with increasing Pb flux and growth time the density of Pb islands increased.

Abstract 6970: identification of spatially enriched cancer cell- and immune cell-regulatory multi-marker-defined prognostic cancer associated fibroblast subsets of human colon cancer

Abstract Introduction: Subsets of cancer-associated fibroblasts (CAFs) in colorectal cancer remain poorly characterized preventing their use as biomarkers and drug targets. Results: Integrated scRNA seq profiling and multiplex staining identified four human CAF subsets These were A1 (PDGFRA+/FAP-/TF), PDGFRAhighA2 (PDGFRA+/FAP+/TF-), PDGFRAlowA2 (PDGFRA-/FAP+/TF-) and A3 (PDGFRA+/FAP-/TF+) (TF: Tissue Factor).Spatial analyses identified spatial associations indicative of specific functional interactions of fibroblast subsets with cancer cells or immune cells. Explorative analyses in six CRC cases suggested, in general, favorable effects of FAP-negative subsets (A1 and A3) on immune features and cancer cell proliferation, whereas FAP-positive subsets PDGFRAhighA2 and PDGFRAlowA2 overall showed pro-tumoral associations. To extend findings, niches were quantitated in U-CAN cohort of approximately 200 stage I-IV cases with around 80% stage II/III. Spatial screening generated more than 1600 different multi-marker-defined tissue metrics. Analyses identified a higher average of A1 density in areas surrounding proliferating vs non-proliferating T-cells, and a higher average PDGFRAlowA2 peri-T-cell density in the low proliferating T-cell group. Regarding cancer cell proliferation, high proliferating cancer islands showed lower peri-epithelial density of A3 and PDGFRAlowA2 cells as compared to low proliferating cancer islands. As for T-cell cancer island infiltration, high peri-cancer island density of A1 and PDGFRAhighA2 was associated with high T-cell cancer island infiltration. Additional analyses related CAF metrics to stage and survival. Density of PDGFRAlow A2 cells increased with stage (I-III), whereas density of A1 showed an opposite pattern with an inverse association with stage (I-III). Regarding survival associations, these were in general stronger for metrics collected in peripheral regions of tumors. Among prognosis signals related to niches referred to above, it was noted that A1 density in peri-cancer regions was significantly associated with good prognosis. Interestingly, this association was not detected when A1 density was scored in total stroma. Among all metrics, the strongest metrics were A1 density in 20μm A1 expansion areas (good prognosis) and T-reg density in the 10μm A3 expansion areas (bad prognosis) (P<0.001; univariate Cox-regression); both in peripheral regions. Conclusion: Four novel CRC CAF subsets, defined by PDGFRalpha, FAP and TF, was identified by integrated single cell RNA seq analyses and multiplex staining with associated digital image analyses. Non-random spatial distribution of these subsets and compartment-specific prognosis associations are compatible with distinct and different functions of these subsets. Citation Format: Linglong Huang, Mercedes Herrera, Jonas Sjölund, Vladimir Chocoloff, Simon Joost, Rasul M. Tabiev, Lina Wik Leiss, Carina Strell, Luis Nunes, Artur Mezheyeuski, David Edler, Anna Martling, Fredrik Pontén, Bengt Glimelius, Tobias Sjöblom, Maria Kasper, Kristian Pietras, Arne Östman. identification of spatially enriched cancer cell- and immune cell-regulatory multi-marker-defined prognostic cancer associated fibroblast subsets of human colon cancer [abstract]. In: Proceedings of the American Association for Cancer Research Annual Meeting 2024; Part 1 (Regular Abstracts); 2024 Apr 5-10; San Diego, CA. Philadelphia (PA): AACR; Cancer Res 2024;84(6_Suppl):Abstract nr 6970.

Island density scaling in reversible submonolayer growth with attachment barriers.

Island nucleation and growth play an important role in thin-film growth. One quantity of particular interest is the exponent χ, which describes the dependence of the saturation island density N_{sat}∼(D_{h}/F)^{-χ} on the ratio D_{h}/F of the monomer hopping rate D_{h} to the deposition rate F. While standard rate equation(RE) theory predicts that χ=i/(i+2) (where i is the critical island size), more recently it has been predicted that in the presence of a strong barrier to the attachment of monomers to islands, a significantly larger value χ=2i/(i+3) may be observed. While this prediction has recently been tested using kinetic Monte Carlo simulations for the case of irreversible growth corresponding to i=1, it has not been tested for the case of reversible island growth corresponding to i>1. Here we present a mean-field self-consistent RE method which we have used to study the dependence of the effective value of χ on D_{h}/F and barrier-strength for i=1,2,3, and 6. Both the no-nucleation-barrier case in which there exists a barrier for monomers to attach to islands larger than the critical island size (but not to smaller islands) and the nucleation-barrier case in which there is a barrier for monomers to attach to islands of all sizes are studied. In all cases, we find that the existence of attachment barriers significantly increases the effective value of χ for a given barrier strength. In addition, for i=1 we find good agreement between our extrapolated asymptotic value of χ and the theoretical strong-barrier prediction both with and without a nucleation barrier. In contrast, for i>1 the value of χ is significantly larger in the presence of a nucleation barrier than in its absence. In particular, while an asymptotic analysis of our results for i>1 also leads to excellent agreement with the strong barrier prediction in the presence of a nucleation barrier, in the absence of a nucleation barrier the asymptotic values are significantly lower.

Wafer level quasi-van der Waals epitaxy of AlGaN/GaN heterojunctions on sp2-bonded BN controlled by AlN nucleation layer

Two dimensional materials, such as sp2-bonded boron nitride (BN) and graphene, have been proven to be excellent templates for the growth and fabrication of independent group III-nitride materials. Herein, wafer level sp2-bonded BN film was successfully grown as a release layer on two-inch sapphire substrate using MOCVD. The different nucleation mechanisms of gallium nitride (GaN) and aluminum nitride (AlN) grown on the BN surface were investigated. We discovered that AlN has a higher nucleation island density compared to GaN on the surface of BN which facilitates better merging of the GaN epitaxial layer. In addition, the quality of the GaN epitaxial layer was optimized by adjusting the growth temperature of AlN. A complete AlGaN/GaN heterojunction structure was subsequently grown on the best quality of GaN, and its average mobility and interlayer carrier concentration was about 1600 cm2 V−1 s−1 and 1 × 1013 cm−2. Finally, the AlGaN/GaN heterojunction was easily transferred from the substrate using tape, which proved the good 2D characteristics of sp2-bonded BN and can undergo non-destructive van der Waals transfer for the upper layer device.

Anomalous intralayer growth of epitaxial Si on Ag(111)

The epitaxial growth of silicene has been the subject of many investigations, controversies and non-classical results. In particular, the initially promising deposition of Si on a metallic substrate such as Ag(111) has revealed unexpected growth modes where Si is inserted at the beginning of the growth in the first atomic plane of the substrate. In order to rationalize this anomalous growth mode, we develop an out-of-equilibrium description of a lattice-based epitaxial growth model, which growth dynamics are analyzed via kinetic Monte-Carlo simulations. This model incorporates several effects revealed by the experiments such as the intermixing between Si and Ag, and surface effects. It is parametrized thanks to an approach in which we show that relatively precise estimates of energy barriers can be deduced by meticulous analysis of atomic microscopy images. This analysis enables us to reproduce both qualitatively and quantitatively the anomalous growth patterns of Si on Ag(111). We show that the dynamics results in two modes, a classical sub-monolayer growth mode at low temperature, and an inserted growth mode at higher temperatures, where the deposited Si atoms insert in the first layer of the substrate by replacing Ag atoms. Furthermore, we reproduce the non-standard Λ\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\Lambda $$\\end{document} shape of the experimental plot of the island density as a function of temperature, with a shift in island density variation during the transition between the submonoloyer and inserted growth modes.

Microscopic study of submonolayer nucleation characteristics during GaN (0001) homoepitaxial growth

An on-lattice kinetic Monte Carlo model is constructed to investigate microscopic nucleation behavior during the submonolayer epitaxial growth of GaN islands, where the Ga and N atoms are treated as the basic particles. The input kinetic parameters of Ga and N, including their surface diffusion energy barriers, were obtained from previous ab initio calculations. Furthermore, a simple and effective bond counting rule is applied in our kinetic Monte Carlo model, and the statistics of the GaN islands on the surface are realized via the application of the Hoshen–Kopelman algorithm. The growth temperature range covers the typical growth temperatures used in the molecular beam epitaxy of GaN. The results obtained show that triangular GaN flakes are observed and that the shapes of the GaN islands remain triangular when the growth temperature is changed. Additionally, the power law for the maximum density of islands versus the ratio of the effective diffusion to the deposition rate is obtained; the exponent of this law is −0.506 ± 0.006, indicating that these triplets represent the seeds required for further nucleation. Finally, the coexistence of the Ga-edge and N-edge types of triangular GaN islands is observed. The island formation mechanism is attributed to a local monomer density misbalance, and it is also shown that a slight variation in the Ga/N ratio in the deposition flux changes the proportion of the Ga-edge and N-edge type triangles; this represents a further indication that controllable GaN morphologies can be obtained by tuning the chemical potentials of the constituent elements.

Interplay of Kinetic Limitations and Disintegration: Selective Growth of Hexagonal Boron Nitride and Borophene Monolayers on Metal Substrates.

The CVD growth of bielemental 2D-materials by using molecular precursors involves complex formation kinetics taking place at the surface and sometimes also subsurface regions of the substrate. Competing microscopic processes fundamentally limit the parameter space for optimal growth of the desired material. Kinetic limitations for diffusion and nucleation cause a high density of small domains and grain boundaries. These are usually overcome by increasing the growth temperature and decreasing the growth rate. In contrast, the nature of molecular precursors with limited thermal stability can result in dissociation and preferential desorption, leading to an undesired or ill-defined composition of the 2D-material. Here we demonstrate these constraints in a combined low-energy electron diffraction and low-energy electron microscopy study by examining the selective formation of single-layer hexagonal boron nitride (hBN) and borophene on Ir(111) using a borazine precursor. We derive a temperature-pressure phase diagram and apply classical nucleation theory to describe our results. By considering the competing processes, we find an optimum growth temperature for hBN of 950 °C. At lower temperatures, the hBN island density is increased, while at higher temperatures the precursor disintegrates and borophene is formed. Our results introduce an additional aspect that must be considered in any high-temperature growth of bielemental 2D-materials from single molecular precursors.

Influence of the Crystallographic Texture of ITO on the Electrodeposition of Silver Nanoparticles

Metal nanoparticles exhibit physical and chemical properties that differ significantly from macroscopic metal phases. In particular, silver nanoparticles (NPs) had have extensive attention since it has a strong interaction with light due to their high quality localized surface plasmon resonances, which can be tuned all across the visible to the NIR regime. These strong and tuneable interaction of visible light with silver NPs have found many applications, in sensing, surface enhanced Raman spectroscopy, photo(electro)catalysis, and more.Polycrystalline indium tin oxide (ITO) films are highly desired substrates for many of these optoelectronic applications. In many of these applications, it is essential to reliably and precisely control the size and density of silver NPs. Even though it is well known that the electrochemical control over nucleation and growth of silver NPs on foreign substrates highly depends on the surface properties of the substrate, yet, the only parameter that is often specified for these ITO substrates is a bulk property: sheet resistance. As a result, nucleation and growth on ITO is highly irreproducible.In this work, we show that ITO substrates with same technical specifications (i.e. sheet resistance, light transmittance and roughness) and supplier may still have different surface properties such as the crystalline texture. We find that these differences in the surface properties has a strong impact on the nucleation and growth. Even though we used seemingly equal ITO substrates, XRD and EBSD scans clearly differentiate between two types of films based on the ratio between the (222) and (400) related peaks. We controlled the density and size of the silver NPs by making use of the double pulse technique. In this method, where the high overpotential nucleation pulse controls the nucleation density. Previous studies have reported an empirical exponential relationship between island density and nucleation pulse overpotential, where the slope is a measure for the electron kinetics.We find that the preferential presence of lower index surfaces (e.g. (100)) leads to few orders of magnitude lower particle density compared to the preferential presence of higher index surfaces (e.g. (111)). Furthermore, the density on the lower index surface is strongly dependent on the nucleation pulse overpotential, while the higher index surface is barely affected. We find that this difference in the relationship is caused by mass transport limited nucleation. We have verified this through a spatial correlation analysis using the nearest-neighbour distance. For higher index surfaces, the nucleation density is already large compared to the Nernst diffusion length at low nucleation pulse overpotentials, such that the limiting mechanism becomes mass transport instead of electron kinetics. We therefore elucidate that the empirical exponential relationship between island density and nucleation pulse overpotential is not enough to draw conclusions on electrode kinetics, where additional validation of the growth process is essential.Beyond careful control of electrochemical parameters, here we show that neglecting the macroscopic surface characteristics of polycrystalline substrates can lead to major ambiguity in nucleation and growth dynamics of metal nanoparticles. We show here that XRD characterization prior to deposition is a simple additional measure to tailor metal nanoparticle electrochemical growth on ITO.

Urban Tourism Traffic Analysis Zone Division Based on Floating Car Data

Tourism traffic has a considerable influence on the state of urban traffic in tourist cities. To consider tourism traffic demand in the division of conventional traffic analysis zones (TAZ), a spatial analysis method combining dynamic traffic state features with static land use and road network characteristics is proposed to define tourism traffic analysis zones (TTAZs). Taking Xiamen Island as an example, first, point of interest (POI) data for the tourism elements on Xiamen Island and kernel density estimation (KDE) are applied to determine the core zones impacted by tourism traffic. Second, within the impacted zones, this paper studies the dynamic distribution of the tourism traffic for peak hours during holidays and non-tourism period by employing spatial autocorrelation method based on floating car data (FCD) and determines the area of slow traffic agglomeration of tourism traffic. In view of the distribution of tourism infrastructure, land use, tourism traffic state distribution and road network, this study identified the characteristics of slow traffic agglomeration in the area near Siming Road and divided four TAZs into six TTAZs. By further dividing the urban TTAZs, this paper hopes to provide a reference for urban traffic planning and management, tourism planning and land use planning.

Evaluation of UTFVI index effect on climate change in terms of urbanization.

Urban heat island density and occurrence are closely related to land use/land cover and land surface temperature variation. The effect of UHI can be described quantitatively with the urban thermal area variance index. This study aims to evaluate the UHI effect of the city of Samsun with the UTFVI index. LST data from 2000 ETM + and 2020 OLI/TIRS Landsat images were used to analyze UHI. The results showed that the UHI effect increased in Samsun's coastline band in 20years. As a result of the field analysis made from the UTFVI maps created, in 20years, 84% decrease in the none slice, 104% increase in the weak slice, 10% decrease in the middle slice, 15% decrease in the strong slice, 8% increase in the stronger slice, and 179% increase in the strongest slice are observed. The slice with the most intense increase is in the strongest slice and reveals the UHI effect.

Synthesis of ultrathin-wall PtCu nanocages as efficient electrocatalyst toward oxygen reduction reactivity

Pt-based hollow nanocrystals have shown an astonishing performance toward oxygen reduction reaction (ORR) because of their open structures, high surface areas and large Pt atom utilization. However, the careful geometric control of hollow nanocrystals is still not easy. Here, a facile template-free method was reported for the synthesis of ultrathin-wall PtCu nanocages with small islands on the surface (U–PtCu NCs). Moreover, the wall thickness of nanocages and the density of islands were well-tuned by controlling the experiment conditions. In the end, the novel hollow structures with abundant defects as well as the synergistic interaction between Pt and Cu elements endowed U–PtCu NCs with enhanced ORR activity. Specifically, its mass activity was 0.36 A mg−1 and its specific activity was 0.71 mA cm−2, which were about 4.2 and 7.1 times higher than that of commercial Pt/C. In addition, the enhanced stability was proved by the accelerated durability test of 10 000 cycles.

Regulation of human ZNF687, a gene associated with Paget's disease of bone.

Mutations in Zinc finger 687 (ZNF687) were associated with Paget's disease of bone (PDB), a disease characterized by increased bone resorption and excessive bone formation. It was suggested that ZNF687 plays a role in bone differentiation and development. However, the mechanisms involved in ZNF687 regulation remain unknown. This study aimed to obtain novel knowledge regarding ZNF687 transcriptional and epigenetic regulation. Through in silico analysis, we hypothesized three ZNF687 promoter regions located upstream exon 1A, 1B, and 1C and denominated promoter regions 1, 2, and 3, respectively. Their functionality was confirmed by luciferase activity assays and positive/negative regulatory regions were identified using promoter deletions constructs. In silico analysis revealed a high density of CpG islands in these promoter regions and in vitro methylation suppressed promoters' activity. Using bioinformatic approaches, bone-associated transcription factor binding sites containing CpG dinucleotides were identified, including those for NFκB, PU.1, DLX5, and SOX9. By co-transfection in HEK293 and hFOB cells, we found that DLX5 specifically activated ZNF687 promoter region 1, and its methylation impaired DLX5-driven promoter stimulation. NFκB repressed and activated promoter regions 1 and 2, respectively, and these activities were affected by methylation. PU.1 induced ZNF687 promoter region 1 which was affected by methylation. SOX9 differentially regulated ZNF687 promoters in HEK293 and hFOB cells that were impaired after methylation. In conclusion, this study provides novel insights into ZNF687 regulation by demonstrating that NFκB, PU.1, DLX5, and SOX9 are regulators of ZNF687 promoters, and DNA methylation influences their activity. The contribution of the dysregulation of these mechanisms in PDB should be further elucidated.

Inhibition of parametric decay in heating microwave beams during fluctuations of the density profile in the edge island of Wendelstein 7-X

Experimental evidence of parametric decay instability (PDI) is observed in the Wendelstein 7-X stellarator, when high-power microwave beams cross a stationary magnetic island at the plasma edge. Here, trapping and build-up of upper hybrid waves within a density bump (measured within the island by alkali beam emission spectroscopy) is responsible for the reduction of the instability power threshold below the maximum gyrotron power. In this paper, we provide the first experimental evidence of the connection between the trapping mechanism in the island density bump and excitation of PDI-related signals. We show correlations of periodic crashes in the PDI-related signals with quasi-continuous fluctuations at the plasma edge, which, additionally, cause a flattening of the density profile in the island. We demonstrate that flattening of the experimental density profiles can suppress the trapping mechanism and inhibit the low-threshold PDI. PDI on the edge island could alter the power deposition profile and reduce the efficiency of the electron cyclotron resonance heating system, simultaneously posing a serious threat to the optimal operation of microwave-based diagnostics and plasma-facing components.

Multiscale Kinetic Monte Carlo Simulation of Self-Organized Growth of GaN/AlN Quantum Dots.

A three-dimensional kinetic Monte Carlo methodology is developed to study the strained epitaxial growth of wurtzite GaN/AlN quantum dots. It describes the kinetics of effective GaN adatoms on an hexagonal lattice. The elastic strain energy is evaluated by a purposely devised procedure: first, we take advantage of the fact that the deformation in a lattice-mismatched heterostructure is equivalent to that obtained by assuming that one of the regions of the system is subjected to a properly chosen uniform stress (Eshelby inclusion concept), and then the strain is obtained by applying the Green’s function method. The standard Monte Carlo method has been modified to implement a multiscale algorithm that allows the isolated adatoms to perform long diffusion jumps. With these state-of-the art modifications, it is possible to perform efficiently simulations over large areas and long elapsed times. We have taylored the model to the conditions of molecular beam epitaxy under N-rich conditions. The corresponding simulations reproduce the different stages of the Stranski–Krastanov transition, showing quantitative agreement with the experimental findings concerning the critical deposition, and island size and density. The influence of growth parameters, such as the relative fluxes of Ga and N and the substrate temperature, is also studied and found to be consistent with the experimental observations. In addition, the growth of stacked layers of quantum dots is also simulated and the conditions for their vertical alignment and homogenization are illustrated. In summary, the developed methodology allows one to reproduce the main features of the self-organized quantum dot growth and to understand the microscopic mechanisms at play.

Research on the Planning Method and Strategy of Urban Wind and Heat Environment Optimization—Taking Shenzhen, a Sub-Tropical Megacity in Southern China, as an Example

The planning techniques and strategies for optimizing the urban wind and heat environment are important means for cities to adapt to climate change at the source. This study used Shenzhen, a sub-tropical megacity in southern China, as an example for evaluating the climate environment, heat island intensity, and urban form, and then for analyzing the relationships between them. The results revealed a high-quality climate area located southeast of Shenzhen that can provide a high wind speed and low temperature. Low-quality climate areas were located in the central and western regions and were less comfortable. The relationship between surface ventilation potential and urban form was analyzed using linear regression and the Pearson correlation coefficient, showing that there was a significant correlation between a surface urban heat island (SUHI) and building density (BD) as well as the sky view factor (SVF), and that there was also a correlation between the ventilation potential coefficient (VPC) and other factors, such as the surface’s roughness length (RL) and building height (BH). The results showed that ventilation capacity deteriorated as BH and RL increased. An environmentally sensitive thermal area was identified from the surface urban heat island intensity, which was always in a strong heat island (SHI) or sub-strong heat island (SSHI) year-round. It was recommended that seven level one corridors and nine level two corridors be formed. Additionally, thermal and wind environment optimization strategies and protective suggestions were proposed for the city’s overall development.

Segregation-induced formation of Ge nanocrystals in silicon oxide

The investigation of initial stage of Si1 – xGex alloy deposition and clarification of Ge nanocrystal formation mechanism has been carried out. It was found that at the initial stages of growing layers of Si1 – xGex alloys, the density of island nuclei Si1 – xGex increases by a factor of 2.5–3.4 compared to the density of polycrystalline silicon islands (from 1.07 ⋅ 1011 to 1.90 ⋅ 1011 cm–2 and from 3.1 ⋅ 1010 to 4.3 ⋅ 1010 cm–2 respectively). A decrease in the thickness of the layer corresponding to the end of the induction period and the formation of a continuous Si1 – xGex layer to 8–10 nm (for polycrystalline silicon, the thickness of a similar layer is approximately 22 nm) has been established. It is shown that the Ge nanocrystal formation is occurred by segregationist pushback of Ge atoms by the SiO2 /Si1 – xGex oxidation front and oxidation through grain boundaries during oxidation of Si1 – xGex thin layers, produced by chemical vapor deposition. The MOS structure with array of Ge nanocrystal, which has the hysteresis capacitance characteristics of 1.7–1.8 V and leakage current density from 1.5 ⋅ 10–16 to 2.2 ⋅ 10–16 A/µm2 was obtained.