Ionized Cluster Beam Deposition Technique Research Articles

Magneto-optical properties of Cd<inf>1-x</inf>Mn<inf>x</inf>Te multilayered structure prepared by ionized-cluster beams

The film growth of Cdl-xMnxTe with a multilayered structure was performed by ionized-cluster beam deposition technique, and their magneto-optical properties have been investigated. It was found that the films had a periodical structure from the results of Auger electron spectroscopy and x-ray diffraction measurements. In the Faraday rotation spectra of the multi-layered structures, two band-edge dispersions corresponding to the well and barrier layers were observed. As the well width decreases, the dispersion peak for the well layer shifts toward higher photon energies and becomes higher, while the dispersion for the barrier layer remains unchanged. This can be explained by a quantum size effect in a superlattice.

Film Growth of GaN on a c-Axis Oriented ZnO Film Using Reactive Ionized-Cluster Beam Technique and Its Application to Thin Film Devices

An attempt to grow a GaN film on a c-axis oriented ZnO film has been performed using reactive ionized-cluster beam deposition technique developed by one of the authors. ZnO film as a substrate is shown to serve as an adequate nucleation seed for growing GaN films, because the lattice misfit between the both materials is about 0.46%. Film growth of GaN has been achived at relatively low substrate temperatures up to 450°C. Measurements of structural and optical properties of grown GaN films are made, and the crystallinity is evaluated for the purpose of developing opto-electronic thin film devices.