Film Growth of GaN on a c-Axis Oriented ZnO Film Using Reactive Ionized-Cluster Beam Technique and Its Application to Thin Film Devices

Abstract

An attempt to grow a GaN film on a c-axis oriented ZnO film has been performed using reactive ionized-cluster beam deposition technique developed by one of the authors. ZnO film as a substrate is shown to serve as an adequate nucleation seed for growing GaN films, because the lattice misfit between the both materials is about 0.46%. Film growth of GaN has been achived at relatively low substrate temperatures up to 450°C. Measurements of structural and optical properties of grown GaN films are made, and the crystallinity is evaluated for the purpose of developing opto-electronic thin film devices.