Film Growth of BeO Using R-ICB Technique and Applications to Electronic Thin Film Devices

Abstract

BeO films prapared by using the reactive ionized-cluster beam (R-ICB) technique are evaluated from the standpoint of crystallinity, and the results of measurements on the optical properties and the thermal conductivities of the films are described. An attempt to grow a BeO film on a Si substrate is made to propose a film formation method for large scale integrated circuits in which both isolation and heatsink are important. In addition, the possibility of surface acoustic wave (SAW) transducers in a GHz-band is proposed on the basis of the experimental properties and of high sound velocity of BeO films grown by the R-ICB technique.