We present measurements of electron emission produced in 64-keV ${\mathrm{H}}^{+}$ grazing bombardment of Si(111) surfaces prepared with different topographies. The surfaces were initially irradiated with several fluences of ${\mathrm{Ar}}^{+}$ at normal incidence, and their topographies characterized by an atomic-force microscope (AFM). The electron energy spectra, measured close to the direction of the projectile specular reflection, show two characteristic structures: a peak at an energy ${E}_{\mathrm{CE}}=35\mathrm{eV},$ corresponding to electrons moving with the projectile velocity (convoy electrons), and a broad peak at an energy ${E}_{M}>{E}_{\mathrm{CE}}.$ Their relative intensities depend strongly on the surface roughness. A similar behavior was observed for GaAs(110) and Al(111) surfaces prepared with different in situ polishing methods. A code developed to process the AFM images allowed us to assign the electron structures at ${E}_{M}$ and ${E}_{\mathrm{CE}}$ to specific topographic features.
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