Abstract
We have used ion scattering spectrometry with time of flight analysis to investigate the atomic structure of a GaAs(110) surface exposed to atomic hydrogen. The backscattering intensity resulting from 6 keV Ne + ion-surface collisions changes with the H exposure. The changes are consistent with derelaxation towards a bulk terminated surface. The derelaxation processes present a very strong dependence upon H exposure until approximately one half of the surface has been derelaxed. At large exposures the Ne backscattering features reach a steady stage indicating that 90% of the surface has been derelaxed.
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