Ion Incidence Angle Research Articles

Investigation of Single Event Transient Effect in Double-Gate InP-Based HEMT

An investigation of single event transient (SET) effect in double-gate InP-based HEMT (DG-HEMT) was conducted by simulations. The effects of different drain voltages (V DS), ion incident positions and angles, linear energy transfer (LET) on SET effect in DG-HEMT were comprehensively analyzed. The simulation results showed that the incident position in gate for DG-HEMT is the most sensitive to SET effect. A higher transient peak drain current (I peak) induced by SET effect was obtained with the higher LET and V DS. At the larger LET and V DS, more electrons were produced by the larger impact ionization rate, leading to the higher I peak. As the incident angle reduces, the track length of incident ions become longer, that is, the sensitive area becomes larger, resulting in the higher I peak. Compared with the single gate InP-based HEMT, the irradiation resistance of device with double gate is improved significantly.

Investigation on the microscopic mechanism of low-energy argon ion irradiation on calcium fluoride

Calcium fluoride (CaF2) crystals are considered ideal materials for optical windows due to their high UV transmittance and exceptional optical anisotropy. Ion beam processing enables the fabrication of CaF2 crystals with high machining accuracy and minimal damage. This study established molecular dynamics, monte carlo simulations, and theoretical models to explore the processes and mechanisms involved in ion beam machining of CaF2 crystals. It was found that the incident energy and angle of argon ion incidence were closely related to changes in the density and kinetic energy of the recoil atoms. While the increase in the density and kinetic energy of the recoil atoms will improve the processing efficiency, it also leads to the increase in defects and deterioration of surface morphology. Additionally, it was observed that backscattering occurs when ions are not incident vertically. To avoid irregular changes in surface morphology and defects, the incidence angle should be controlled to below 40°, and ionization loss caused by recoil ions should be minimized to prevent drastic temperature fluctuations and significant temperature rises during processing. This paper reveals the sputtering mechanism of CaF2 crystals bombarded by low-energy argon ions under various process parameters, provides guidance for optimization of the ion-beam process, and proposes an innovative research method to understand the evolution of calcium fluoride crystals under argon ion radiation from the atomic perspective. The research results will provide significant theoretical support for optimizing the ion beam processing process and enhancing the material properties.

Ion incidence angle-dependent pattern formation on AZ® 4562 photoresist by reactive ion beam etching

Reactive ion beam etching is a key technology in the field of ultra-precise surface engineering. In this process nanopatterns can emerge and alter the functional properties of the surfaces. Therefore, it is necessary to understand which reactive ion beam parameters influence the emergence of these nanopatterns. In this study the influence of reactive ion beam etching on the commercially available photoresist AZ® 4562 is investigated. Atomic force microscopy and scanning electron microscopy reveal the formation of nanopatterns (ripples, triangular features, protrusions, facets) depending on a wide range of ion incidence angles (0°–75°) as well as the etch time. The emerged nanopatterns resemble those known from inorganic materials and therefore, lead to the assumption that local redeposition, surface viscous flow and dispersion plays an important role for the pattern formation on polymer surfaces. Major difference from ion beam erosion with inert species is the absence of nanoholes. Spectroscopic ellipsometry shows that the thickness of the modified surface layer depends on the ion incidence angle but not on the fluence in the investigated range. Using X-ray photoelectron spectroscopy, trends of the chemical composition of the surface/near-surface region were detected, which depend on ion incidence angle and etch time.

Anisotropic wettability transition on nanoterraced glass surface by Ar ions

Ion beam sputtering (IBS) can induce nanoripple patterns in a short time on variety of materials for wide range of applications. In this work, we describe the nanoripple as well as terrace pattern formation by IBS on soda-lime glass surfaces and the mechanisms leading to such pattern formations. The role of ion energy, ion fluence, and ion incidence angle on the morphology of the structural features is systematically explored. For a range of ion beam parameter values with energy varying from 600 to 1500 eV and fluence in the range 9.7 × 1017 to 2.0 × 1019 ions/cm2 at fixed incidence angle of 45°, transition of ripples to terraces has been observed. The experimental results are explained on the basis of recently modified KS equation which clearly explains the simultaneous role of nonlinear cubic term in the terrace formation. It is also demonstrated how ion beam can be used to tailor the wettability of glass surface and makes it hydrophobic in nature. Due to pattern formation, anisotropic hydrophobicity is observed showing an increasing trend owing to the magnification of the amplitude of nanopatterns developed on the surface.

Sputtering yield increase with fluence in low-energy argon plasma-tungsten interaction

The increase of tungsten sputtering yield with fluence was investigated during plasma (≤100 eV) irradiation. This analysis focused on the combined effects of surface binding energy and surface morphology caused by Ar retention. As post-mortem analysis, Ar concentration was measured with SIMS (Secondary Ion Mass Spectroscopy) and TDS (Thermal Desorption Spectroscopy). The Ar concentration saturated at 21 % of W number density during the sputtering process. The corresponding change in surface morphology causes a change in the local ion incident angle, which leads to a sputtering yield increase of 10 %. The increased Ar concentration leads to a decrease in surface binding energy and a change in surface morphology which increases W sputtering yield from 0.02 to 0.03 by ion energy 80 eV. Over time, W sputtering yield reaches saturation as a function of saturated Ar concentration. This result implies that the synergistic role of Ar concentration and surface morphology on sputtering yield. This sputtering yield enhancement occurs more seriously in the realistic condition of plasma-facing materials that face low-energy plasma.

Investigation of Ripple Formation on Surface of Silicon by Low-Energy Gallium Ion Bombardment.

Regular wave patterns were created by a 2 kV gallium ion on Si(111) monocrystals at incidence angles between 60° and 80° with respect to the surface normal. The characteristic wavelength and surface roughness of the structured surfaces were determined to be between 35-75 nm and 0.5-2.5 nm. The local slope distribution of the created periodic structures was also studied. These topography results were compared with the predictions of the Bradley-Harper model. The amorphised surface layers were investigated by a spectroscopic ellipsometer. According to the results, the amorphised thicknesses were changed in the range of 8 nm to 4 nm as a function of ion incidence angles. The reflectance of the structured surfaces was simulated using ellipsometric results and measured with a reflectometer. Based on the spectra, a controlled modification of reflectance within 45% and 50% can be achieved on Si(111) at 460 nm wavelength. According to the measured results, the characteristic sizes (periodicity and amplitude) and optical property of silicon can be fine-tuned by low-energy focused ion irradiation at the given interval of incidence angles.

Roadmap toward Controlled Ion Beam‐Induced Defects in 2D Materials

AbstractUnderstanding the nature, density, and distribution of structural defects is crucial for tailoring the properties of atomically thin two‐dimensional (2D) materials, which is paramount for advances in nanotechnology. Ion irradiation emerges as a promising technique for defect engineering of single‐atom‐thick materials, due to its high controllability, repeatability, and accuracy. The objective is to provide a comprehensive review elucidating the impact of various irradiation parameters, such as ion mass, energy, fluence, and incident angle, on defect formation in 2D materials. However, the presence of the substrate can significantly influence defect yield and the mechanism of formation due to backscattered ions and sputtered substrate atoms. Hence, a thorough comparison of ion beam‐induced defects in both freestanding (suspended) and supported (on a substrate) 2D materials, with a focus on substrate effects is conducted. Moreover, a detailed analysis of characterization techniques suitable for each scenario will be provided. This work not only contributes to advancing the current understanding of defect formation and evolution in 2D materials during ion beam irradiation but also offers insights into selecting specific parameters for this process to create desired defects in these materials. Consequently, it has the potential to facilitate the design of nanoscale devices with tailored functionality.

Investigation of collision effects on ion dynamics in the presheath and sheath of weakly collisional and magnetized hydrogen plasmas

The effect of collisions on the motion of magnetized ions in sheath and presheath plasma regions was investigated through the measurement of ion incident angle of a hydrogen ion at a graphite surface. The experiment was conducted in hydrogen and deuterium plasmas where the ion mean free path is 5–10 times larger than the ion gyro radius and with varying magnetic field angle ψ from 0° to 90° normal to the target surface. The hydrogen ions actively reacted with carbon, leading to the formation of conical tips with axes directed along the incident ion flow direction. The ion incident angle was measured from the etched graphite images taken by scanning electron microscopy. The measured angles were compared to those calculated using Ahedo's fluid magnetic sheath model. In addition, we adopted the nominal Bohm criterion at the electrostatic sheath edge due to the larger ion gyro radius than the sheath. The results show that the ion incident angle was inclined to the normal direction with respect to the magnetic field angle because of the effect of ion collisions on ion motion in the presheath. The collisional effect on the ion motion is drastic for an oblique magnetic field angle ψ > 85°. This study demonstrates that the collisional property of the ions is crucial to guide the ion motion in magnetic (pre)sheath and to determine the ion incidence angle at the surface, even in collisionless and weakly magnetized plasmas.

Ion motion above a biased wafer in a plasma etching reactor

The behavior of ions in the plasma is an essential component in the process of industrial etching. We studied the motions and energy distribution of argon ions in a inductively coupled plasma (ICP) etching tool, by the method of laser induced fluorescence (LIF). The silicon wafer clamped to a chuck at the bottom of the chamber was biased with a 1 MHz 1–1.2 kV peak-to-peak sinusoidal voltage. The plasma is formed with a 2 MHz ICP coil pulsed at 10 Hz. Sheath thickness was measured at different phases of the bias waveform. The experiment also compared the ion motions with and without wafer bias, as well as different switch-on time of wafer bias. For all cases, ion energy distribution functions and the two-dimensional flow pattern were studied near the center and edge of the wafer. Significant vortex flows were observed near the wafer edge. Experiments in which the wafer was biased in the plasma afterglow resulted in a narrow distribution of ion energy close to the bias voltage at the vicinity of the wafer, and the ion incident angle on the wafer was the smallest. The results were compared to simulations using the Hybrid Plasma Equipment Model code.

A One‐Dimensional Model of Atmospheric Sputtering at Io Driven by S++ and O+

AbstractIo, the closest of Jupiter's four Galilean moons, suffers from intense ion bombardment from Jupiter's magnetosphere. The constant atmospheric erosion by energetic ion precipitation, referred to atmospheric sputtering, serves as an important mechanism of Io's atmospheric escape. This study is devoted to a state‐of‐the‐art study of atmospheric sputtering at Io, with the aid of constantly accumulated understandings of Io's space environment and atmospheric photochemistry, as well as the updated laboratory measurements. A Monte Carlo model is constructed to track the energy degradation of incident S++ and O+ and atmospheric recoils from which the sputtering yields of different atmospheric species are determined. Our calculations suggest a total escape rate of 3 × 1029 atom s−1 on Io, and SO2 is the dominant sputtered species. Further investigations reveal that S++ is the most efficient species for atmospheric sputtering on Io, and sputtering yields increase substantially with increasing incident ion mass, energy, and incidence angle. The model sensitivity to different influence factors is also discussed, including scattering angle distribution, atmospheric column density, proton precipitation, inelastic process, and surface sputtering, of which the former two dominate.

Atomistic analysis on implantation effects of hydrogen ions and copper ions into 4H-SiC

The microstructure evolution of 4H-SiC under the implantation of hydron ions and copper ions was investigated using molecular dynamics (MD) simulations and experimental analysis. MD models were developed to simulate the implantation of single Cu2+ and H+ ions into SiC, analyzing lattice damage, amorphous defects, and temperature distribution. H+ ion implantation resulted in a higher number of amorphous atoms compared to Cu2+ ions. The maximum atomic temperature during Cu2+ ion implantation was significantly higher (1635 K) than during H+ ion implantation (950 K), although the volume of the temperature rise region was larger in the H+ model. Cu2+ ions induced more severe lattice vibrations than H+ ions. Atom movement along regions of weak lattice binding energy was observed. The study also examined overlapping multiple ion implantations, considering ion type, initial energy, and incident angle. Cu2+ ions exhibited smaller sputtering yield, projection range, number of amorphous atoms, and energy increment compared to H+ ions. A 0° incident angle resulted in higher sputtering yield and increased amorphous structure formation due to the channeling effect, which was more pronounced in the H+ model. The experimental results demonstrate that compared to Cu2+ ions, H+ ions have a greater impact on the surface peak roughness, sub-surface damage depth, and surface damage of SiC samples. It can provide a reliable guidance for selecting process parameters and the types of ions to implant.

Investigation of facet evolution on Si surfaces bombarded with Xe ions

This study investigates the formation of facets on Si surface under Xe ion irradiation using an ion energy of 0.5 keV. By examining the effects of ion incidence angle (60° –85°), fluence (4.5 × 1018 to 1.35 × 1019 ions/cm2), and temperature (RT to 200 ◦C), we explore the evolution of facets. The surface roughness displays a distinct trend, reaching its peak when the ion incidence angle is 80°, which indicates the formation of faceted structures due to a sudden change in roughness. Additionally, temperature studies highlight the important role of temperature in enhancing facet arrangement. To support experimental findings, numerical simulation using Anisotropic Kuramoto-Sivashinsky (AKS) equation is employed. These simulations provide valuable insights into the dynamics of facet evolution, allowing us to better understand how curvature-dependent sputtering yield, dispersion, and diffusion collectively influence the formation and morphology of facets on the Si surface under Xe ion irradiation.

Fully discrete model of kinetic ion-induced electron emission from metal surfaces

Ion-induced electron emission (IIEE) is an important process whereby ions impinging on a material surface lead to net emission of electrons into the vacuum. While relevant for multiple applications, IIEE is a critical process of electric thruster (ET) operation and testing for space propulsion, and, as such, it must be carefully quantified for safe and reliable ET performance. IIEE is a complex physical phenomenon, which involves a number of ion-material and ion-electron processes, and is a complex function of ion mass, energy, and angle, as well as host material properties, such as mass and electronic structure. In this paper, we develop a discrete model of kinetic IIEE to gain a more accurate picture of the electric thruster chamber and facility material degradation processes. The model is based on three main developments: (i) the use of modern electronic and nuclear stopping databases, (ii) the use of the stopping and range of ions in matter to track all ion and recoil trajectories inside the target material, and (iii) the use of a scattering Monte Carlo approach to track the trajectories of all mobilized electrons from the point of first energy transfer until full thermalization or escape. This represents a substantial advantage in terms of physical accuracy over existing semi-analytical models commonly used to calculate kinetic IIEE. We apply the model to Ar, Kr, and Xe irradiation of W and Fe surfaces and calculate excitation spectra as a function of ion depth, energy, and angle of incidence. We also obtain minimum threshold ion energies for net nonzero yield for each ion species in both Fe and W and calculate full IIEE yields as a function of ion energy and incidence angle. Our results can be used to assess the effect of kinetic electron emission in models of full ET facility testing and operation.

Numerical simulation of single-particle transients in low-noise amplifiers based on silicon-germanium heterojunction bipolar transistors and inverse-mode structures

In this work, TCAD simulation modeling is carried out for silicon-germanium heterojunction bipolar transistor (SiGe HBT), and an X-band low noise amplifier (LNA) circuit is built based on the SiGe HBT device model to carry out the hybrid simulation of single-particle transient (SET). The rule of SET pulse varying with LET value and incident angle of ions is studied, and the results show that with the increase of incident LET value, the amplitude of SET pulse at the LNA port increases, and the oscillation time is prolonged; with the increase of incident angle of ions, the amplitude of SET pulse at the LNA port first increases and then decreases, and the oscillation time decreases. With the development of the characterization process, the cutoff frequency (<i>f</i><sub>T</sub>) and the maximum oscillation frequency (<i>f</i><sub>MAX</sub>) of SiGe HBT device with IM structure, are measured considering the use of inverse-mode (IM) common emitter and common-base structures (Cascode) to reduce the sensitivity of the LNAs to single-particle effects. This work calibrates the devices of the TCAD platform as well as the devices of the ADS platform, establishes F-F LNAs as well as I-F LNAs on the ADS, respectively, and verifies the relevant RF performances of the LNA circuits by using the IM-structured SiGe HBTs as the core devices. The SET experiments are performed on the Sentaurus TCAD platform for the F-F LNA circuit and I-F LNA circuit for ions incident on two positions: common base transistor and common emitter transistor, respectively. It is concluded that the LNA with IM structure still shows good RF performance compared with the standard LNA at 130 nm. The transient current duration of the LNA circuit with IM Cascode structure is significantly reduced, and the peak value is reduced by 66% or more, which significantly reduces the sensitivity of the SiGe LNA circuit to SET.

Formation and self-organisation of nano-porosity in swift heavy ion irradiated amorphous Ge

Nano-porosity in amorphous Ge formed by swift heavy ion irradiation displays a peculiar self-organisation process. Initially almost randomly distributed pores grow with increasing irradiation fluence and segregate in layers orientated parallel to the sample surface. This self-organisation mechanism depends on the ion energy, thickness of the amorphous Ge layer and the angle of ion incidence and shows a characteristic length depending on ion energy and irradiation angle. Molecular dynamics simulations of individual ion tracks show that voids form due to the transition from the low-density amorphous to the high-density liquid phase, which also gives rise to a flow directed away from large pores and surfaces. The flow results in a characteristic distance from surfaces and larger pores, below which new voids do not form, and supports the formation of voids at the amorphous/crystalline interface. Simulations also demonstrate that, while direct impacts can reposition small voids, partial or nearby impacts promote their growth at the same location. These processes are plausible drivers for the self-organization.

Deposition of nanometer-thick amorphous carbon films by filtered cathodic vacuum arc under oblique ion incidence conditions

Filtered cathodic vacuum arc (FCVA) is a promising technique for synthesizing extremely thin carbon films exhibiting highly tetrahedral (sp3) carbon atom hybridization. However, most FCVA studies are for incident ions impinging perpendicular to the substrate surface. In this study, the effects of the ion incidence angle on the thickness, structure, and surface roughness of amorphous carbon (a-C) films deposited under different substrate bias voltages were examined in the light of computational and experimental results. Dynamic simulations and film thickness measurements showed a decrease in film thickness with increasing ion incidence angle, attributed to the decrease in carbon ion fluence on the film surface. Carbon atom hybridization analysis revealed a critical ion incidence angle for a given substrate bias voltage. Simulation and experimental results demonstrated that the enhancement of sp3 hybridization resulted from carbon-carbon collision cascades on the growing film surface and densification induced by direct and recoil implantation processes controlled by the ion incidence angle and substrate bias voltage. The strong dependence of a-C film growth on the carbon ion incidence angle exemplified by the results of this study has direct implications in the oblique deposition of ultrathin a-C films with predominant tetrahedral carbon atom hybridization. The present study provides a framework for optimizing the ion incidence angle to achieve the deposition of a-C ultrathin films with high sp3 contents.

Competition between ion beam sputtering and self-organization of point defects for surface nanostructuring on germanium

Nanostructuring via ion beam irradiation on Ge substrates can be activated by ion beam sputtering and self-organization of point defects (SPDs). For evaluating the mechanism by which these formation factors compete, we studied nanostructuring on Ge substrates subjected to sputtering-dominant conditions, viz., the low-energy ion incidence. A focused ion beam was used for nanostructuring and adjusting an angle of ion incidence to the surface normal range of 0°–60°. The ions accelerated for irradiation were Ga+ with an incident energy of 5–30 keV, and the fluence and beam current were 1 × 1020–1 × 1022 ions/m2 and 0.5–16.7 nA, respectively. Based on the results of serial experiments, the incident energy of 5 keV can be the threshold for the activation of nanostructuring by SPD.

Scanning electron microscopic evaluation of broad ion beam milling effects to sedimentary organic matter: Sputter-induced artifacts or naturally occurring porosity?

Research examining organic-matter hosted porosity has significantly increased during the last decade due to greater focus on understanding hydrocarbon migration and storage in source-rock reservoirs, and technological advances in scanning electron microscopy (SEM) capabilities. The examination of nanometer-scale organic-matter hosted porosity by SEM requires the preparation of exceptionally flat geologic samples beyond the abilities of traditional mechanical polishing, which can deform or otherwise obscure organic surfaces. To meet this demand, broad ion beam (BIB) milling was introduced as a sample preparation technique for SEM petrographic analysis of geologic samples. As with any sample preparation technique, there can be unintended consequences. In this study, we examined the development of nanometer-scale sputter-induced voids caused by BIB milling of thermoset plastic binder material [poly(methyl methacrylate), PMMA] used for the mounting of geologic samples, and artifact sputter-induced voids in the organic matter of Green River Formation and Kimmeridge Clay Formation source rocks. Development of artifact sputter-induced voids was evaluated in relation to variations in the slope of the sample examination surface (0.0–4.9% slope), effectively varying the angle of ion incidence. The results indicate that only minor variations in the angle of ion incidence can generate sputter-induced voids in both PMMA (10.0–386.2 nm diameter sputter-induced voids) and sample sedimentary organic matter (solid bitumen; 12.2–103.6 nm diameter sputter-induced voids). Overall, average artifact pore diameters increased with increasing ion incidence angle within PMMA. Although sputter-induced voids within solid bitumen in the Green River Formation sample were only found in limited extent, the size of these void artifacts falls within the same size range as naturally occurring meso-macroporosity. That is, the pore-like artifacts could easily be misconstrued as naturally developed organic porosity, which is a major concern for SEM-based porosity evaluation methods. This study describes the factors that contribute to the creation of artifact sputter-induced voids, their distinguishing characteristics, and best practices for avoiding the creation of ion-induced artifacts.

Etching mechanism of high-aspect-ratio array structure

Through-Silicon-Via (TSV) is an significant technology that is being widely employed in micro-electro-mechanical system (MEMS) manufactories. However, it is remain challenging to obtain a deep silicon etching with vertical-angle and smooth-sidewall characterizes by silicon-etching anisotropy through TSV technology. Herein, we use inductively coupled plasma (ICP) to obtain the deep silicon etching anisotropy. Chamber pressure, Bosch process cycles, bias powers, and the size of the etching pattern, which are the critical controllable process parameters, have been investigated to achieve the silicon-etching anisotropy. The results reveal that the sidewall angle of the array structure becomes increasingly slanted while raising chamber pressure from 2 to 15 Pa in the SF6 etching process of the first step of the cycle in the Bosch process. As the cycles increase from 60 to 240 cycles at the bias power of 100 w, the anisotropy decreases from 0.80 to 0.5. With RF bias powers rise from 200 to 400 w, the anisotropy enhances from 0.80 to 0.94. Due to the collision of active ions with each other, the sidewall angle and anisotropy of a high aspect-ratio array structure severely depend on the incidence angle of the active ions. The “Si etching balance model” has been established for the fabrication of TSV.

Deep neural network-based reduced-order modeling of ion–surface interactions combined with molecular dynamics simulation

With the advent of complex and sophisticated architectures in semiconductor device manufacturing, atomic-resolution accuracy and precision are commonly required for industrial plasma processing. This demands a comprehensive understanding of the plasma–material interactions—particularly for forming fine high-aspect ratio (HAR) feature patterns with sufficiently high yield in wafer-level processes. In particular, because the shape distortion in HAR pattern etching is attributed to the deviation of the energetic ion trajectory, the detailed ion–surface interactions need to be thoroughly investigated. In this study, molecular dynamics (MD) simulations were utilized to obtain a fundamental understanding of the collisional nature of accelerated Ar ions on the fluorinated Si surface that may appear on the sidewall of the HAR etched hole. High-fidelity data for ion–surface interaction features representing the energy and angle distributions (EADs) of sputtered atoms for varying degrees of surface F coverage and ion incident angles were obtained via extensive MD simulations. A deep learning-based reduced-order modeling (DL-ROM) framework was developed for efficiently predicting the characteristics of the ion–surface interactions. In the ROM framework, a conditional variational autoencoder (AE) was implemented to obtain regularized latent representations of the distributional data with the condition of the governing factors of the physical system. The proposed ROM framework accurately reproduced the MD simulation results and significantly outperformed various DL-ROMs, such as AE, sparse AE, contractive AE, denoising AE, and variational AE. From the inferred features of the sputtering yield and EADs of sputtered/scattered species, significant insights can be obtained regarding the ion interactions with the fluorinated surface. As the ion incident angle deviated from the glancing-angle range (incident angle >80°), diffuse reflection behavior was observed, which can substantially affect the ion transport in the HAR patterns. Moreover, it was hypothesized that a shift in sputtering characteristics occurs as the surface F coverage varies, based on the inferred EADs. This conjecture was confirmed through detailed MD simulations that demonstrated the fundamental relationship between surface atomic conformations and their sputtering behavior. Combined with additional atomistic-scale investigations, this framework can provide an efficient way to reveal various fundamental plasma–material interactions which are highly demanded for the future development of semiconductor device manufacturing.