Ion Bombardment Modification Research Articles

(Digital Presentation) Characterization and Compression Technology of Real 3D Corner Residue Between Dummy Gate and Formed Fin During an Advanced Inductive Coupled Plasma (ICP) Gate Etch Process in Advanced FinFET

3-Dimesional corner residue between Fin and gate bottom plays a key role in gate profile definition and device performance, while the characterization and compression remain challenging due to shortage of analysis technology and decreasing gate/Fin pitch. In this work, cross-section and planar TEM/STEM are adopted together to measure the real corner size. Gate profile loading along Fin is discussed based on the characterizations and further optimized by tuning processes. Several methods including sidewall passivation and ion bombardment modification has been introduced. An excellent FinFET performance is presented, together with a detailed mechanism.

Enhanced bioactivity of polyvinylidene chloride films using argon ion bombardment for guided bone regeneration.

Polyvinylidene chloride (PVDC) is a long chain carbon synthetic polymer. The objective of this study was to improve the bioactivity of PVDC films through surface modification using argon (Ar) ion bombardment to create Ar-modified PVDC films (Ar-PVDC) to address the clinical problems of guided bone regeneration (GBR), which is technique-sensitive, and low bone regenerative ability. First, the effects of Ar ion bombardment, a low temperature plasma etching technique widely used in industry, on PVDC film wettability, surface chemistry, and morphology were confirmed. Next, fibroblast-like and osteoblast-like cell attachment and proliferation on Ar-PVDC were assessed. As a preclinical in vivo study, Ar-PVDC was used to cover a critical-sized bone defect on rat calvaria and osteoconductivity was evaluated by micro-computed tomography analysis and histological examinations. We found that the contact angle of PVDC film decreased by 50° because of the production of -OH groups on the PVDC film surface, though surface morphological was unchanged at 30 min after Ar ion bombardment. We demonstrated that cell attachment increased by about 40% and proliferation by more than 140% because of increased wettability, and 2.4 times greater bone regeneration was observed at week 3 with Ar-PVDC compared with untreated PVDC films. These results suggest that Ar ion bombardment modification of PVDC surfaces improves osteoconductivity, indicating its potential to increase bone deposition during GBR.

Ar ion bombardment modification of Pd–Au/MWCNTs catalyst surfaces studied by electron spectroscopy

AbstractThe Pd–Au multiwall carbon nanotubes (MWCNTs) supported catalyst prepared by polyol method was found to be catalytically active material in direct formic acid fuel cell electrooxidation reaction and during cyclic voltammetry (CV) measurements. The surface of the catalyst after calcination and reduction treatments was investigated previously. The effect of Ar ion bombardment modification on the calcinated catalyst was studied by electron spectroscopy. The chemical and structural changes were deduced from the X‐ray photoelectron spectroscopy (XPS) and X‐ray excited Auger electron spectroscopy (XAES) spectra. The XPS quantitative and qualitative analysis of different chemical forms of atoms indicated that the sputtering causes an increase of Pd surface content, accompanied by decreasing content of N, O, C sp2, and Au (due to preferential sputtering of Au) and significant increase of C sp3 amount. A decrease was also observed in the surface content of (i) carboxyl groups, (ii) water, and (iii) Pd oxide (mainly less stable PdO2). Analysis of XPS inelastic background shape by QUASES indicates that Pd crystallites phase is covered by PdOx + Camorphous overlayer of decreasing thickness after sputtering. Namely, thickness of PdOx overlayer decreased from 8.2 to 3.5 nm and the thickness of amorphous carbon overlayer located on the top increased from 2.3 to 3.5 nm. Significant increase of C sp3 content results from carbon nanotube (CNT) π bonds damaging, whereas decrease of PdO2 content from lower stability of PdO2. Larger thickness of Camorphous overlayer, in contrary to PdOx, may result from higher preferential sputtering of oxygen than carbon atoms and cracking of the MWCNTs structure by Ar+ ions.

Ion-bombardment modification of the surface of mirrors fabricated of ZrTiCuNiBe amorphous alloys

When preparing mirror samples of amorphous metal alloys some inhomogeneities of the structure became to be seen on the surface. These inhomogeneities were modified during bombardment with ions of deuterium and argon plasma. Besides, a new blister-like type of inhomogeneities was found on the mirror surface in one experiment. In the paper a short description of obtained results are presented.

Ion-sputter-modification of metal targets

One of the more important aspects of ion bombardment modification of surface morphology of solids is surface roughness. In spite of a large number of publications concerning the first mentioned surface property (i.e. morphology), information about the influence of ion sputtering on the roughness is rather sparse. Taking into account the importance of the question in various branches of science and technology as well as its potential and practical implications, some experimental results of argon ion beam bombardment induced roughness on titanium, tantalum and stainless steel surfaces are presented in this paper.

A study of ion-bombarded nanostructures on germanium surfaces by scanning probe microscopy

Ion bombardment modification of solid surfaces has long been academic and technological interest. Epi-ready Ge (111) and (100) surfaces were implanted with 40 to 200 keV germanium (Ge), cobalt (Co), and iron (Fe) ions at the dose of 10 15 to 5×10 17 ions/cm 2. Cellular nanostructures were observed by scanning probe microscopy (SPM), including scanning tunnelling microscopy (STM), and contact-mode and tapping-mode atomic force microscopy (AFM). These structures are similar (at higher resolution) to those reported in earlier scanning electron microscope (SEM) measurements (I.H. Wilson, J. Appl. Phys., 53 (1982) 1698). In the case of Co-implanted Ge(111), the variation of the root-mean-square roughness ( R q) with ion dose (10 16 to 10 17 ions/cm 2), accelerating voltage (40 to 70 kV) and mean beam current density (15 to 150 μA/cm 2) is presented and explained in terms of ion range and surface temperature. Finally, the effect of the tip shape in the AFM images presented in this paper is discussed.

Ion-bombardment modification of surface morphology of solids

Ion bombardment modification of surface geometrical structure, i.e. surface roughness alteration (Part 1) and changes in surface shape (this paper) are considered. Two surface shape alteration methods, masked and maskless pattern etching, are described. They have been applied to modify various kinds of targets, including metals (99.9% aluminium and 99.9% titanium), metal alloys (stainless steel of 1H18N9T and SS 316 LC), alumina ceramic (96% Al 2 O 3 ) and Teflon. The results of experiments, where narrow beam glow discharge (GD) and broad beam Kaufman type guns have been used as ion sources, are presented. Approximation of a real surface shape profile by a so-called «mean line», which is very helpful in the case of ion patterned but extremely rough surfaces, is also discussed

Ion-bombardment modification of the surface morphology of solids

One of the aspects of ion-bombardment modification of the surface morphology of solids (IBMSM) is surface roughness alteration. The influence of ion-beam sputtering on changes in the surface morphology is presented and discussed. Theoretical concepts (a simple theory), together with experimental verification including narrow- and broad-beam sputtering-induced modification of surface roughness of various materials, such as metals (aluminium, titanium), alloys (stainless steel 1H18N9T and SS316LC) and alumina ceramic (99.5% Al2O3), are the main area of interest here. These rather unexplored problems are very important from theoretical and practical points of view because there are many technologies and experimental techniques in which they are, or may be, used.

Ion-bombardment modification of surface morphology of solids: a new direction in materials science

Ion-bombardment modification of surface morphology of solids: a new direction in materials science

On the Ubiquity of Ion Bombardment Modification of Silicon Schottky Barriers

On the Ubiquity of Ion Bombardment Modification of Silicon Schottky Barriers

Summary Abstract: Synergistic effects in ion bombardment modification of silicon Schottky contacts

Summary Abstract: Synergistic effects in ion bombardment modification of silicon Schottky contacts