Beam Ion Source Research Articles

Stress-free deposition of [001] preferentially oriented titanium thin film by Kaufman ion-beam source

We proposed a method to control and minimize residual stress in [001] preferentially oriented Ti thin films deposited by a Kaufman ion-beam source using a substrate temperature during deposition (T) as the parameter. We determined the residual stress, corresponding lattice parameters, and thickness of deposited films using X-ray diffraction and X-ray reflectivity measurements. We showed that the Ti film deposited at T≈273°C was stress-free with corresponding lattice parameters a0 and c0 of (2.954±0.003)Å and (4.695±0.001)Å, respectively. The stress-free sample has the superior crystallographic quality and pure [001] orientation. The Ti thin films were oriented with the c-axis parallel to the surface normal. We also investigated root mean square of surface roughness of deposited films by atomic force microscopy and it was in the range from ≈0.58nm to ≈0.71nm. Such smooth and stress-free layers are suitable for microelectromechanical systems.

The Morphology of TiO2 Nanotube Arrays Grown from Atomically Peened and Non-Atomically Peened Ti Films

The growth of TiO2 nanotube arrays (TNTAs) on non-native substrates is essential for exploiting the full potential of this nanoarchitecture in applications such as gas sensing, biosensing, antifouling coatings, low-cost solar cells, drug-eluting bimedical implants and stem-cell differentiators. The direct formation of anodic TNTAs on non-native substrates requires the vacuum deposition of a thin film of titanium on the substrate followed by subsequent electrochemical anodization of the film. In this report, we studied the effect of atomic peening on the formation of Ti thin films on technologically important non-native substrates. We compared the structure and morphology of evaporated and sputtered Ti films, and correlated them to the morphology of the vertically oriented TiO2 nanostructures that resulted subsequent to anodization of those films. We calculated a minimum value of 1.33 eV/atom for the energy of refkected neutral Ar species arriving at the substrate when a chamber pressure of 1 mTorr is used during the sputter deposition of Ti. Previous approaches relied on substrate heating to elevated temperatures during Ti thin film deposition or ion-beam assisted Ti thin film deposition as a prerequisite to form TiO2 nanotube arrays (TNTAs). We demonstrated TNTAs on a variety of substrates at room temperature using both evaporated and sputtered Ti films without recourse to ion-beam sources. Evaporated Ti films were found to possess small grain size and high local surface roughness, which resulted in nanotubes with extremely rough sidewalls. Ti thin films formed by Ar+ ion sputtering at commonly used chamber pressures of 7–20 mTorr at substrate temperatures ranging from room-temperature to 250 °C possessed a highly rough surface and three-dimensional grains, which precluded the formation of ordered nanotubes upon anodization due to highly non-uniform pore nucleation processes. In contrast, Ti thin films sputtered at low chamber pressures of 0.8–2 mTorr had a low surface roughness due to the atomic peening process. Such films, even when deposited at room temperature, resulted in ordered nanotube arrays upon anodization.

Управление формой пучка технологического ионного источника для высокоточной обработки поверхности

Управление формой пучка технологического ионного источника для высокоточной обработки поверхности

Modernization of high-power (5 kW) broad ion beam source

In the course of the long-term performance (during 5 years) of a high-power source of gas ions (25 keV, 0.2 A, 600 cm2) with a plasma emitter based on cold cathode discharge, the character and rate of key constructive elements faults were determined, which allowed to calculate the inter-repair time, complexity and cost of the repair. The peculiarities of the gas-discharge system and the ion beam forming system limiting the effectiveness of ion beam treatment were revealed as well. Conditions favorable for the decrease in the discharge voltage by 50–200 V and igniting voltage up to 1.5-2 times are determined. The possibilities of lowering the minimal flow of working gas are demonstrated. The design of the discharge system with reduced sputtering rate of local areas of the hollow cathode is offered. The changes added to ion source design aimed to enhance the lifetime of the plasma chamber that is exposed to cyclic heating by the back electron beam leading to the development of through cracks, and to enlarge the rupture life of glow discharge hollow cathode by optimizing its configuration and the conditions of discharge ignition and burning, are described. The upgraded design of a multislit ion-optical system with enhanced performance ensures uniform surface distribution of ion fluence.

Advanced control of neutral beam injected power in DIII-D

In the DIII-D tokamak, one of the most powerful techniques to control the density, temperature and plasma rotation is by eight independently modulated neutral beam sources with a total power of 20MW. The rapid modulation requires a high degree of reproducibility and precise control of the ion source plasma and beam acceleration voltage. Recent changes have been made to the controls to provide a new capability to smoothly vary the beam current and beam voltage during a discharge, while maintaining the modulation capability.The ion source plasma inside the arc chamber is controlled through feedback from the Langmuir probes measuring plasma density near the extraction end. To provide the new capability, the plasma control system (PCS) has been enabled to change the Langmuir probe set point and the beam voltage set point in real time. When the PCS varies the Langmuir set point, the plasma density is directly controlled in the arc chamber, thus changing the beam current (perveance) and power going into the tokamak. Alternately, the PCS can sweep the beam voltage set point by 20kV or more and adjust the Langmuir probe setting to match, keeping the perveance constant and beam divergence at a minimum. This changes the beam power and average neutral particle energy, which changes deposition in the tokamak plasma. The ion separating magnetic field must accurately match the beam voltage to protect the beam line. To do this, the magnet current control accurately tracks the beam voltage set point. These new capabilities allow continuous in-shot variation of neutral beam ion energy to complement the discontinuous “on or off” modulation method presently used to control average beam power and torque input.

Methods of nanostructured coatings deposition by magnetron sputtering and cathodic arc evaporation

Nanoscale coatings improve hardness, corrosion resistance and wear resistance of the cutting tools and machine parts. The sputtering magnetrons and the cathodic arc evaporators are used in industrial and medical applications to produce functional and protective films. PVD methods of nanostructured coating deposition based on limitation of crystal growth are described in this article. Three methods are applied for this purpose. Metal cathodes containing 3%-12% additives such as Si, B, BN, Cu, Ni are used to limit the crystal growth in the nanoscale range. The substrate rotation leads to the reduction of the layer thickness to obtain the multilayer nanoscale coatings. Bias voltage applied to the substrate holder for the ion bombardment and the substrate heating can be used to reduce the crystal size in the coating. The design of the vacuum set with plasma sources and ion beam source is considered.

Methods of nanostructured coatings deposition by magnetron sputtering and cathodic arc evaporation

Nanoscale coatings improve hardness, corrosion resistance and wear resistance of the cutting tools and machine parts. The sputtering magnetrons and the cathodic arc evaporators are used in industrial and medical applications to produce functional and protective films. PVD methods of nanostructured coating deposition based on limitation of crystal growth are described in this article. Three methods are applied for this purpose. Metal cathodes containing 3%-12% additives such as Si, B, BN, Cu, Ni are used to limit the crystal growth in the nanoscale range. The substrate rotation leads to the reduction of the layer thickness to obtain the multilayer nanoscale coatings. Bias voltage applied to the substrate holder for the ion bombardment and the substrate heating can be used to reduce the crystal size in the coating. The design of the vacuum set with plasma sources and ion beam source is considered.

Nanostructured thin film coatings with different strengthening effects

A number of articles on strengthening thin film coatings were analyzed and a lot of unusual strengthening effects, such as super high hardness and plasticity simultaneously, ultra low friction coefficient, high wear-resistance, curve rigidity increasing of drills with small diameter, associated with process formation of nanostructured coatings by the different thin film deposition methods were detected. Vacuum coater with RF magnetron sputtering system and ion-beam source and arc evaporator for nanostructured thin film coating manufacture are represented. Diamond Like Carbon and MoS 2 thin film coatings, Ti, Al, Nb, Cr, nitride, carbide, and carbo-nitride thin film materials are described as strengthening coatings.

Maximum available flux of charged particles from the laser ablation plasma

The laser ablation plasma was characterized for high-flux sources of ion and electron beams. An ablation plasma was biased to a positive or a negative high voltage, and the fluxes of charged particles through a pair of extraction electrodes were measured as a function of the laser intensity IL. Maximum available fluxes and the ratios of electron and ion beam currents Je/Ji were evaluated as a function of the laser irradiance. The ion and the electron fluxes increased with a laser intensity and the current ratio was around 40 at IL = 1.3 × 108 W/cm2 which monotonically decreased with an increase of the laser intensity. The current ratios Je/Ji were correlated to the parameters of ablation plasma measured by the electrostatic probes. The results showed that the ion fluxes are basically enhanced by super-sonically drifting ions in the plasma and the electron fluxes are also enhanced by the drift motion together with a reduction of the sheath potential due to the enhanced ion flux to the surrounding wall.

Quantitative low-energy ion beam characterization by beam profiling and imaging via scintillation screens.

This study presents the imaging and characterization of low-current ion beams in the neutralized state monitored via single crystal YAG:Ce (Y3Al5O12) scintillators. To validate the presented beam diagnostic tool, Faraday cup measurements and test etchings were performed. Argon ions with a typical energy of 1.0 keV were emitted from an inductively coupled radio-frequency (13.56 MHz) ion beam source with total currents of some mA. Different beam properties, such as, lateral ion current density, beam divergence angle, and current density in pulsed ion beams have been studied to obtain information about the spatial beam profile and the material removal rate distribution. We observed excellent imaging properties with the scintillation screen and achieved a detailed characterization of the neutralized ion beam. A strong correlation between the scintillator light output, the ion current density, and the material removal rate could be observed.

An advanced electric propulsion diagnostic (AEPD) platform for in-situ characterization of electric propulsion thrusters and ion beam sources

Experimental characterization is an essential task in development, qualification and optimization process of electric propulsion thrusters or ion beam sources for material processing, because it can verify that the thruster or ion beam source fulfills the requested mission or application requirements, and it can provide parameters for thruster and plasma modeling. Moreover, there is a need for standardizing electric propulsion thruster diagnostics in order to make characterization results of different thrusters and also from measurements performed in different vacuum facilities reliable and comparable. Therefore, we have developed an advanced electric propulsion diagnostic (AEPD) platform, which allows a comprehensive in-situ characterization of electric propulsion thrusters (or ion beam sources) and could serve as a standard on-ground tool in the future. The AEPD platform uses a five-axis positioning system and provides the option to use diagnostic tools for beam characterization (Faraday probe, retarding potential analyzer, ExB probe, active thermal probe), for optical inspection (telemicroscope, triangular laser head), and for thermal characterization (pyrometer, thermocamera). Here we describe the capabilities of the diagnostic platform and provide first experimental results of the characterization of a gridded ion thruster RIT-μX.

Design and Test of Readout Electronics for Thermocouples on Ion Beam Sources

A small radiofrequency ion source named negative ion optimization phase 1 (NIO1) has been recently installed at Consorzio RFX in Padua. The NIO1 source is capable of producing about 130 mA of negative hydrogen ions accelerated at 60 kV and represents a useful test bench for negative ion source optimization. The exploitation of this device is included in the framework of the activities for SPIDER and MITICA and the prototypes of the negative ion source and of the whole neutral beam injector for international thermonuclear experimental reactor (ITER) experiment, respectively. As in SPIDER and MITICA, thermal measurements are performed in NIO1 by several thermocouples (TCs). These measurements are indeed important for the evaluation of the thermal load distribution, plasma generation, and beam extraction uniformities, for the monitoring of different experimental conditions, and for the verification of the reliability of source and beam-line components in the expected range of temperatures. This paper deals with the development of a new electronic frontend for acquisition and transmission (tx) of the thermal signals from the TCs mounted on the ion beam source, preserving signal integrity. It is the updated version of previous circuits initially developed for optical tx of the thermal measurements from the grounded grid in SPIDER. In particular, two of these circuits were installed in the NIFS Neutral Beam Test Stand in Japan and in BATMAN at IPP Garching, Germany. The system presented here is under test in the NIO1 device to check its reliability in monitoring the temperature of some cooling circuits, like in SPIDER and MITICA.

Small-scale fracture toughness of ceramic thin films: the effects of specimen geometry, ion beam notching and high temperature on chromium nitride toughness evaluation

For the implementation of thin ceramic hard coatings into intensive application environments, the fracture toughness is a particularly important material design parameter. Characterisation of the fracture toughness of small-scale specimens has been a topic of great debate, due to size effects, plasticity, residual stress effects and the influence of ion penetration from the sample fabrication process. In this work, several different small-scale fracture toughness geometries (single-beam cantilever, double-beam cantilever and micro-pillar splitting) were compared, fabricated from a thin physical vapour-deposited ceramic film using a focused ion beam source, and then the effect of the gallium-milled notch on mode I toughness quantification investigated. It was found that notching using a focused gallium source influences small-scale toughness measurements and can lead to an overestimation of the fracture toughness values for chromium nitride (CrN) thin films. The effects of gallium ion irradiation were further studied by performing the first small-scale high-temperature toughness measurements within the scanning electron microscope, with the consequence that annealing at high temperatures allows for diffusion of the gallium to grain boundaries promoting embrittlement in small-scale CrN samples. This work highlights the sensitivity of some materials to gallium ion penetration effects, and the profound effect that it can have on fracture toughness evaluation.

Dual ion beam assisted magnetron deposition of biaxially textured YSZ and YBCO/YSZ thin films

Abstract Biaxially textured yttria stabilized zirconia (YSZ) thin films were deposited on polished hastelloy and silicon substrates using ion beam assisted deposition (IBAD). The IBAD apparatus includes a planar magnetron fitted with a crystalline YSZ target to provide the film-forming species, and two Kaufman-type ion beam sources which provide Ar+ ions for bombarding the film during growth. The two ion beam sources were mounted symmetrically at 55° angles to the substrate plane normal, making 110° angle between them. Textured YSZ films were deposited under three different IBAD conditions: (a) films were bombarded by a single ion beam source (SIBAD), (b) films were bombarded by a single ion beam source for a time alternating from the two symmetric directions (AIBAD), and (c) by dual ion beam assisted deposition (DIBAD) where the film was bombarded simultaneously from the two symmetric directions. The X-ray φ-scan results indicate that DIBAD followed by epitaxial growth of YSZ produced the highest degree of biaxial texture in YSZ films. Superconducting yttrium barium copper oxide (YBCO) films deposited on highly textured DIBAD YSZ films had φ-scan full width at half maximum of 7.1° and 5.5° for hastelloy and silicon substrates, respectively.

Gate/Geant4-based Monte Carlo simulation for calculation of dose distribution of 400 MeV/u carbon ion beam and fragments in water

The applications of carbon ion beam in tumor therapy have attracted more attention in recent years. Monte Carlo simulation is an important approach to obtain accurate radiotherapy parameters. In this work, a 400 MeV/u carbon ion beam incident on water phantom was simulated with Gate/Geant4 tools. In methods, the authors set up a carbon ion beam source according to the experiment parameters of Haettner, defined the geometries and materials, set up the physics processes, and designed the means of information collection. In results, the authors obtained the longitudinal dose distribution, the lateral dose distribution, and the relative uncertainty of dose. The dose contributions of all kinds of fragments were calculated detailedly and compared with the Francis results. This work is helpful for people’s understanding of the dose distributions produced by carbon ion beam and fragments in water. The simulation method is also significative for radiotherapy treatment planning of carbon ion beam, and it is easy to extend. For obtaining a special result, we may change the particle energy, particle type, target material, target geometry, physics process, detector, etc.

Investigation of filtered vacuum arc plasma application for TiAlN and TiSiB coatings deposition using ion beam and plasma material processing

Abstract The paper studies the formation of TiAlN and TiSiB coating by macroparticle filtered vacuum arc plasma, high-frequency short-pulsed plasma immersion and repetitively pulsed high-current ion beam implantation. A new design of an axially symmetric plasma filter is described. The samples were pretreated by a repetitively pulsed high-current ion beam and plasma source “Rainbow-5” and high-frequency (100 kHz) short-pulsed (8 μs) metal plasma immersion ion surface treatment. Macroparticle-filtered metal plasma deposition was realized under ion beam mixing or using high-frequency short-pulsed negative bias. The work yields the surface morphology, elemental composition, and mechanical properties of coatings.

Bright focused ion beam sources based on laser-cooled atoms.

Nanoscale focused ion beams (FIBs) represent one of the most useful tools in nanotechnology, enabling nanofabrication via milling and gas-assisted deposition, microscopy and microanalysis, and selective, spatially resolved doping of materials. Recently, a new type of FIB source has emerged, which uses ionization of laser cooled neutral atoms to produce the ion beam. The extremely cold temperatures attainable with laser cooling (in the range of 100 μK or below) result in a beam of ions with a very small transverse velocity distribution. This corresponds to a source with extremely high brightness that rivals or may even exceed the brightness of the industry standard Ga+ liquid metal ion source. In this review we discuss the context of ion beam technology in which these new ion sources can play a role, their principles of operation, and some examples of recent demonstrations. The field is relatively new, so only a few applications have been demonstrated, most notably low energy ion microscopy with Li ions. Nevertheless, a number of promising new approaches have been proposed and/or demonstrated, suggesting that a rapid evolution of this type of source is likely in the near future.

水クラスターイオンビーム源の開発と利用

水クラスターイオンビーム源の開発と利用

Tribological Properties of High Hardness ta-CNx Coatings Deposited by Filtered Arc Deposition with Block-on-Ring Tribotester

Low friction and high wear resistance are strongly needed desired in boundary lubrication condition for industrial usage. Carbon nitride (CNx) coating is one of the promising materials, but the hardness of conventional CNx coating was only 10GPa of nanoindentation hardness. In order to coat high hardness ta-CNx, we developed a dynamic mixing deposition method combining the filtered arc deposition system and nitrogen ion beam source. Nitrogen content was controlled by the nitrogen partial pressure in the deposition. Nanoindentation result gave the hardness of ta-CNx from 75 to 70GPa, under the nitrogen content from 5 to 8 at.%. In order to clarify the tribological performance of ta-CNx coatings under the boundary lubrication, block on ring friction test was carried out. As a result, this new ta-CNx showed much higher wear resistance compared to the former soft CNx and hard ta-C coatings under PAO lubrication for the block-on-ring tribotester.

Preparation of (001) preferentially oriented titanium thin films by ion-beam sputtering deposition on thermal silicon dioxide

We propose the ion-beam sputtering deposition providing Ti thin films of desired crystallographic orientation and smooth surface morphology not obtainable with conventional deposition techniques such as magnetron sputtering and vacuum evaporation. The sputtering was provided by argon broad ion beams generated by a Kaufman ion-beam source. In order to achieve the optimal properties of thin film, we investigated the Ti thin films deposited on an amorphous thermal silicon dioxide using X-ray diffraction, and atomic force microscopy. We have optimized deposition conditions for growing of thin films with the only (001) preferential orientation of film crystallites, and achieved ultra-low surface roughness of 0.55 nm. The deposited films have been found to be stable upon annealing up to 300 °C which is often essential for envisaging subsequent deposition of piezoelectric AlN thin films.