Ion Beam Enhanced Deposition Method Research Articles

Influence of post-annealing time on properties of ZnO: (Li, N) thin films prepared by ion beam enhanced deposition method

Lithium and nitrogen dual-doped ZnO films [ZnO: (Li, N)] with Li concentrations of 4 at.% were grown on glass substrates by ion beam enhanced deposition (IBED) and then annealing in Ar flow. The influence of post-annealing time on their structural, optical and electrical properties was studied. The co-doped ZnO: (Li, N) films have a ZnO wurtzite structure. Electrical property studies indicated that the ZnO: (Li, N) film annealed at 500 °C in Ar showed p-type conductivity with a lowest resistivity of 10.83 Ω cm. The transmittance of ZnO: (Li, N) film is above 80 % in visible range and the band gap of ZnO: (Li, N) film have a evident narrowing after p-type doping.

Li—N dual-doped ZnO thin films prepared by an ion beam enhanced deposition method

Li—N dual-doped ZnO films [ZnO:(Li,N)] with Li doping concentrations of 3 at.%–5 at.% were grown on a glass substrate using an ion beam enhanced deposition (IBED) method. An optimal p-type ZnO:(Li,N) film with the resistivity of 11.4 Ω·cm was obtained by doping 4 at.% of Li and 5 sccm flow ratio of N2. The ZnO:(Li,N) films exhibited a wurtzite structure and good transmittance in the visible region. The p-type conductive mechanism of ZnO:(Li,N) films are attributed to the Li substitute Zn site (LiZn) acceptor. N doping in ZnO can forms the Lii—NO complex, which depresses the compensation of Li occupy interstitial site (Lii) donors for LiZn acceptor and helps to achieve p-type ZnO:(Li,N) films. Room temperature photoluminescence measurements indicate that the UV peak (381 nm) is due to the shallow acceptors LiZn in the p-type ZnO:(Li,N) films. The band gap of the ZnO:(Li,N) films has a red-shift after p-type doping.

Photoelectrical and Photovoltaic Peroperties of n-ZnO/p-Si Heterojunction

n-ZnO thin films doped In with 2 atm.% were deposited on p-type silicon wafer with textured surface by Ion Beam Enhanced Deposition method, after annealing and prepared front and back electrodes, the n-ZnO/p-Si heterojunction samples were fabricated. The photoelectric property of the sample were measured and compared with silicon solar cell. The result indicated the saturated photocurrent of n-ZnO/p-Si heterojunction was 20% greater than one of the Si solar cell. It means the ZnO/Si heterojunction has a higher ability of produce photoelectron then one of silicon solarcell. The result of the photovoltaic test of n-ZnO/p-Si heterojunction show The open circuit voltage and short-circuit current of the n-ZnO/p-Si heterojunction was 400mV and 5.5mA/cm2 respectively. It was much smaller than the one of silicon solar cells. The reason was discussed

Influence of preparing process on total-dose radiation response of high- k Hf-based gate dielectrics

The purpose of this paper is to report some total-dose radiation response experimental results of Hf-based dielectric films including HfON film prepared by ion beam enhanced deposition method (IBAD) and HfO 2 film by ultra high vacuum electron beam evaporation system (UV-EBE). MIS structures with HfON and HfO 2 gate dielectrics were irradiated by10 keV X-rays with the dose from 0 to1 × 10 6 rad (Si). Electrical measurement results showed that trap charge density and interface trap charge density of HfON dielectric films are much smaller than HfO 2 dielectric films, and the flatband and midgap voltage shifts in HfON films are also smaller than that in HfO 2 film. AFM and XRD results show that HfON films are smooth and thermal stability even under 800 °C high temperature annealing.

Post-annealing influence on properties of N–In codoped ZnO thin films prepared by ion beam enhanced deposition method

N–In codoped ZnO thin films were prepared by ion beam enhanced deposition method (IBED) and were annealed in nitrogen and oxygen ambient after deposition. The influence of post-annealing on structure, electrical and optical properties of thin films were investigated. As-deposited and all post-annealed samples showed preferential orientation along (0 0 2) plane. Electrical property studies indicated that the as-deposited ZnO film showed p-type with a sheet resistance of 67.5 kΩ. For ZnO films annealed in nitrogen with the annealing temperature increasing from 400 to 800 °C, the conduction type of the ZnO film changed from p-type to n-type. However, for samples annealed in oxygen the resistance increased sharply even at a low annealing temperature of 400 °C and the conduction type did not change. Room temperature PL spectra of samples annealed in N 2 and in O 2 showed UV peak located at 381 and 356 nm, respectively.

Structure, electrical and optical properties of N–In codoped ZnO thin films prepared by ion-beam enhanced deposition method

N–In codoped ZnO films were prepared on Si, SiO 2 and glass substrates by ion-beam enhanced deposition method and their structural, optical and electrical properties were characterized. The polycrystalline N–In codoped ZnO films deposited on Si, SiO 2 and glass substrates are found to have a preferred (0 0 2) orientation, smooth surface and high density. The as-deposited ZnO film on Si substrate showed p-type with a resistivity of 2.4 Ω cm. After being annealed in N 2 at a temperature lower than 600 °C, the ZnO films showed p-type and the lowest resistivity was 0.8 Ω cm. When the annealing temperature was higher than 600 °C, the ZnO films becomes n-type, and as the annealing temperature goes up, the resistivity of the N–In decreases.

Preparation and mechanism of p-type ZnO films formed by modified ion beam enhanced deposition method

In-N codoped ZnO films were prepared on Si and SiO2/Si substrates by modified ion beam enhanced deposition method. ZnO mixed with 2 atm % In2O3 powder was used as sputtering target and during the deposition N+/Ar+ mixed beam was implanted into the deposited films. The XRD results showed that all polycrystalline In-N codoped ZnO films deposited on Si and SiO2 substrates have a preferred (002) orientation and showed p-type conduction. The as-deposited films were annealed in N2 and O2. After annealed in N2 the lowest resistivity of p-type In-N codoped ZnO films was 0.9Ωcm. The dependence of film structure and electrical properties on deposition and annealing condition were discussed.

Annealing characteristics of the vanadium oxide films prepared by modified ion beam enhanced deposition

Different annealing conditions were adopted to anneal the vanadium oxide films prepared by modified ion beam enhanced deposition (IBED) method. An X-ray diffraction (XRD) was used to analyze the orientation of the IBED films and the resistance was tested with temperature change to measure the temperature coefficient of resistance (TCR). Experiments indicated that there existed a critical temperature for crystallization of VO 2, which changed with the different deposition conditions of the IBED method. It is very difficult to obtain VO 2 structure if the annealing temperature was lower than the critical temperature. If the temperature is much higher than the critical temperature or annealing time is too long, the valence of vanadium in VO 2 film will easily reduce from four to low value. The TCR of the IBED VO 2 polycrystalline films annealed in appropriate condition could reach higher than 4%/K.

高エネルギーイオンを用いて形成したダイヤモンドライクカーボン膜のマイクロトライボロジー特性

The effects of high energy ion-implantation treatment on the mechanical properties of diamond-like carbon (DLC) films have been investigated in this study. The micro-tribological properties of DLC films formed by using various methods such as ion-beam enhanced deposition (IBED) and plasma based ion-implantation (PBII) have been examined by means of atomic force microscopy (AFM) and acoustic emission (AE) oscillation scratch tester. With the PBII method DLC films were deposited on silicon wafer under conditions of a pulse bias of −5 to −20kV in an atmosphere of CH4 plasma. DLC films were deposited with the IBED Method by means of ion-plating and the deposition was performed using the methods of dynamic mixing and static mixing at an acceleration voltage of 120kV. These main results of above-mentioned tests are summarized as follows. (1) In case of DLC films deposited by the PBII method, there is an existing peak voltage at which the maximum hardness and durability were provided. (2) DLC films deposited with PBII method shows higher hardness than these deposited with the IBED method does but they also have brittleness is large. Therefore, the quantity of micro wear of DLC films with PBII was larger than that of DLC films with IBED. (3) The critical load of PBII-DLC films increased with an increase on a peak voltage. And, the adhesive strength of ion beam mixing DLC films deposited at 120kV is similar to that of PBII films deposited at a peak voltage of several tens of kV.

A comparative study on the microstructure and tribological properties of Si 3N 4 and TiN films produced by the IBED method

The tribological properties of Si 3N 4 and TiN thin films produced by ion beam enhanced deposition (IBED) were compared on a SRV friction and wear testing machine. The friction coefficient of all thin films shows a descending tendency with increase in load, and is lower than that of 52100 steel. All the IBED films show a much better wear resistance than 52100 steel, especially in the higher load and frequency ranges; it can reach six times that of the latter. In order to understand the reasons for their excellent properties, the microstructure, microhardness and bonding strength with the substrate were analysed by SEM, X-ray diffraction, Knoop hardness and scratching test methods separately. The results show that the TiN(1) film exhibits the best tribological properties, which are closely related with its greater hardness and bonding strength.

A comparative study on microstructure and tribological properties of Si 3N 4 and TiN thin films produced by IBED method

In this paper, the tribological properties of Si 3N 4 and TiN thin films produced by ion beam enhanced deposition (IBED) method were compared on an SRV friction and wear testing machine. In order to understand the reasons of their excellent properties the microstructure, microhardness and bonding strength with the substrate were analysed by SEM, X-ray diffraction, Knoop hardness test and scratching test methods separately. The results show that the TiN(1) film exhibits the best tribological properties, which are closely related with its higher hardness and bonding strength.