Abstract
N–In codoped ZnO films were prepared on Si, SiO 2 and glass substrates by ion-beam enhanced deposition method and their structural, optical and electrical properties were characterized. The polycrystalline N–In codoped ZnO films deposited on Si, SiO 2 and glass substrates are found to have a preferred (0 0 2) orientation, smooth surface and high density. The as-deposited ZnO film on Si substrate showed p-type with a resistivity of 2.4 Ω cm. After being annealed in N 2 at a temperature lower than 600 °C, the ZnO films showed p-type and the lowest resistivity was 0.8 Ω cm. When the annealing temperature was higher than 600 °C, the ZnO films becomes n-type, and as the annealing temperature goes up, the resistivity of the N–In decreases.
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