Abstract
Li—N dual-doped ZnO films [ZnO:(Li,N)] with Li doping concentrations of 3 at.%–5 at.% were grown on a glass substrate using an ion beam enhanced deposition (IBED) method. An optimal p-type ZnO:(Li,N) film with the resistivity of 11.4 Ω·cm was obtained by doping 4 at.% of Li and 5 sccm flow ratio of N2. The ZnO:(Li,N) films exhibited a wurtzite structure and good transmittance in the visible region. The p-type conductive mechanism of ZnO:(Li,N) films are attributed to the Li substitute Zn site (LiZn) acceptor. N doping in ZnO can forms the Lii—NO complex, which depresses the compensation of Li occupy interstitial site (Lii) donors for LiZn acceptor and helps to achieve p-type ZnO:(Li,N) films. Room temperature photoluminescence measurements indicate that the UV peak (381 nm) is due to the shallow acceptors LiZn in the p-type ZnO:(Li,N) films. The band gap of the ZnO:(Li,N) films has a red-shift after p-type doping.
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