AbstractThe reaction of silane with H atomsmagnified imagewas studied behind reflected shock waves at temperatures between 998 K and 1273 K and pressures around 1.5 bar. The thermal decomposition of a few ppm ethyl iodide (C2H5I) was used as a well known H‐atom source. The atomic resonance absorption spectroscopy (ARAS) was applied for time resolved and simultaneous measurements of H‐ and Si‐atom concentrations. The presence of an excess of SiH4 causes a fast consumption of H atoms according to reaction (R 5). The signals obtained were kinetically evaluated by computer simulations based on a simplified reaction mechanism. The rate coefficient for reaction (R 5) was found to be:
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