The influence of ultrasonic vibrations on striations in InSb, GaAs and Bi-Sb alloy single crystals grown by a modified Czochralski method was investigated. Ultrasonic vibrations at frequencies of 0.15, 0.25, 0.6, 1.2, 2.5, 5 or 10 MHz were introduced into the melt parallel to the pulling axis. The introduction of ultrasonic vibrations at a frequency up to 5 MHz eliminates the striations in GaAs and Bi-Sb alloy single crystals growing with constant diameter. It was found that for Bi-Sb alloy single crystals of constant diameter growth, after ‘processing’ of the melt with ultrasonic vibrations, the striations do not reappear until after 2 h. The effectiveness of the influence of the ultrasonic vibrations on the decrease of growth striations in InSb, GaAs and Bi-Sb alloy growing crystals was estimated with the help of the calculation of the sound absorption coefficient.