Abstract
Effects of ultrasonic vibrations were investigated on InxGa1-xSb mixed crystals grown by the Czochralski method. During the growth, ultrasonic vibrations were introduced into the melt through the carbon crucible. InxGa1-xSb (0<x<0.07) was grown in the single crystalline state to a fair thickness with the introduction of ultrasonic vibrations, but no single crystals were obtained without vibrations. The growth thickness in the single crystalline state was increased with an increase of the output power of ultrasonic vibrations introduced.
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