Intrinsic Noise Parameters Research Articles

Direct Deembedding of Noise Factors for On-Wafer Noise Measurement

This paper extends the noise theory of linear networks to enable direct deembedding of noise factors for an active device surrounded by a passive four-port. It solves the problem of noise factor deembedding, when there are feedback paths between the output and input of a device-under-test. It also leads to a new approach to obtain intrinsic noise parameters for on-wafer noise measurements by performing deembedding first and optimization last. Verification of the noise factor deembedding algorithm is performed using idealized data, and the evaluation of the new noise parameter deembedding approach is conducted using the experimental data of the n-type MOSFETs fabricated in 28- and 90-nm CMOS technology from United Microelectronics Corporation.

An analytical approach to the HEMT noise wave model parameter determination

This paper presents an analytical approach to determination of the noise wave model parameters for a high electron-mobility transistor working under different temperature and frequency conditions. The presented approach is composed of two steps and provides more efficient determination of these parameters than in the case of optimization procedures commonly applied for that purpose in circuit simulators. The first step is extraction of the noise parameters of transistor intrinsic circuit from the measured noise parameters of whole transistor using an analytical noise de-embedding procedure. The second step is calculation of the noise wave model parameters from the de-embedded intrinsic noise parameters using existing formulas. The accuracy of the presented approach is validated in a wide frequency and temperature range by comparison of the transistor noise parameters simulated for the determined noise wave model parameters with the measured noise parameters.

Transistor Modeling: Robust Small-Signal Equivalent Circuit Extraction in Various HEMT Technologies

Small-signal equivalent circuit (SSEC) models prove indispensable to a broad range of activities, ranging from the understanding of device physics, the analysis of device performance, the characterization and comparison of fabrication processes, the bottom-up construction of large-signal models, the extraction of intrinsic noise parameters, and the design of monolithic microwave integrated circuits (MMICs). Because the SSEC model links the physical structure of the device to its circuit behavior, it allows analysis of the microwave performance as a function of the device geometry. A physically representative model can therefore be used for frequencies extending beyond those of the measurement setup. One must keep in mind that a model is only a physical approximation of a given device, and the more we demand of a model, the more likely we are to expose its various shortcomings. For example, one can stress the limits of a model by extending its frequency range or by applying it to dissimilar technologies; experience shows that with newer material systems, models tend to provide poorer fits to the measured data. In the course of our work, we specifically investigated differences brought about by different materials for devices implemented with a given mask set.

Monte Carlo study of the noise performance of isolated-gate InAs/AlSb HEMTs

In this work, the extrinsic dynamic behavior and noise performance of a 225 nm isolated-gate InAs/AlSb high electron mobility transistor (HEMT) have been studied by means of Monte Carlo simulations. A very good agreement with experimental results has been achieved for fT. Discrepancies between experimental and simulated fmax have been observed and attributed to the experimental frequency dispersion of gd and Cds. The simulations of the intrinsic and extrinsic noise parameters indicate an excellent performance for this device (Fmin = 0.3 dB at 10 GHz) even if we confirm that the presence of the native oxide under the gate induces a significant decrease in fT and fmax of around 20%, together with an increase of noise figure and noise resistance.

An accurate and efficient high frequency noise simulation technique for deep submicron MOSFETs

Based on an active transmission line concept and two-dimensional (2-D) device simulations, an accurate and computationally efficient simulation technique for high frequency noise performance of MOSFETs is demonstrated. Using a Langevin stochastic source term model and small-signal equivalent circuit of the MOSFET, three intrinsic noise parameters (/spl gamma/, /spl delta/, and c) for the drain noise and induced gate noise are calculated. Validity and error analysis for the simulation are discussed by comparing the simulation results with theoretical results as well as measured data.

The variation of short‐gate‐length gaas mesfet intrinsic noise parameters with BIAS

AbstractThe use of intrinsic noise parameters P, R, and C to describe the noise mechanisms present in short‐gate‐length GaAs MESFETs is well established. These parameters are, however, bias dependent, and as yet no analytic solution is available that can accurately predict this dependency. Here results are presented that show the evolution of these parameters with drain current for three practical devices.

Accurate noise characterization of short gate length GaAs mesfets and hemts for use in low‐noise optical receivers

AbstractAccurate noise characterization of MESFETs and HEMTs is required for the design of high‐frequency optical receivers. Here we consider a technique that extracts the intrinsic noise parameters P, R, C from measured noise data. Novel analytic expressions are presented as well as results that prove the validity of the technique. © 1993 John Wiley & sons, Inc.

Determining intrinsic noise parameters of 0.25 μm gate pseudomorphic HEMT

An accurate equivalent circuit of a pseudomorphic HEMT (PM-HEMT) has been used, together with physically realistic values for the intrinsic PM-HEMT noise parameters (P, R and C, to estimate the extrinsic noise parameters (minimum noise figure, optimum noise impedance, etc.) of a 0.25 μm gate PM-HEMT. It is demonstrated that good agreement with experiment can be obtained for the minimum noise figure, optimum noise impedance, and also noise resistance, over the frequency range 6–18 GHz.