Abstract
An accurate equivalent circuit of a pseudomorphic HEMT (PM-HEMT) has been used, together with physically realistic values for the intrinsic PM-HEMT noise parameters (P, R and C, to estimate the extrinsic noise parameters (minimum noise figure, optimum noise impedance, etc.) of a 0.25 μm gate PM-HEMT. It is demonstrated that good agreement with experiment can be obtained for the minimum noise figure, optimum noise impedance, and also noise resistance, over the frequency range 6–18 GHz.
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