Interfacial Thermal Transport Research Articles

Interfacial Thermal Transport and Electrical Performances of Supercapacitors with Graphene/Carbon Nanotube Composite Electrodes

Interfacial Thermal Transport and Electrical Performances of Supercapacitors with Graphene/Carbon Nanotube Composite Electrodes

Molecular dynamics study of thermal transport across diamond/cubic boron nitride interfaces

The thermal transport properties at the interface of diamond and cubic boron nitride (c-BN) heterostructures significantly influence heat dissipation in high-power electronic and optoelectronic devices. However, a fundamental understanding of the various parameters modulating the interfacial thermal conductance is still lacking. In this work, we employ non-equilibrium molecular dynamics (NEMD) simulations to systematically investigate the effects of system size, temperature, and defect density on the interfacial thermal conductance across diamond/c-BN interfaces. The results indicate a positive correlation between system length and interface thermal conductance when below the phonon mean free path threshold, attributable to ballistic phonon transport regimes in smaller domains. Additionally, we observe an incremental enhancement in interface thermal conductance with increasing temperature, stemmed from intensified phonon-phonon interactions and reduced boundary scattering of thermal energy carriers. The introduction of vacancy and twinning defects is found to hinder interfacial thermal transport due to heightened phonon scattering processes that impede phononic transmission. The interatomic interactions and lattice dynamics are analyzed to provide insights into the underlying thermal transport physics at the atomistic scale. By tuning the system length from 4 to 16 nm, temperature from 300 to 500 K, and defect density from 0 to 0.4%, we achieve tunable control of the interfacial thermal conductance. Our study elucidates the multiscale mechanisms governing thermal transport across diamond/c-BN and provides potential pathways to actively tailor interfacial thermal properties through structural and temperature engineering. The fundamental understandings are valuable for optimizing heat dissipation and enabling thermal management solutions in next-generation power electronics leveraging these materials.

Enhancing interfacial thermal transport efficiently in diamond/graphene heterostructure by involving vacancy defects

The enhancement of interfacial thermal conductance is critical to the efficient heat dissipation in micro- and nano- devices. The introduction of defects is a special method to improve the interfacial thermal conductance. For diamond/graphene heterostructure, the effects of defects in graphene and diamond on interfacial thermal conductance are investigated by molecular dynamics simulation. The increasing of defects in graphene causes the interfacial thermal conductance decreasing first and then increasing. The interfacial thermal conductance will remarkably rise with the increasing of the radius and number of vacancy defects in diamond. The thermal transport process at the interface experiences three stages according to the overlap energy of diamond and graphene. The mechanism of vacancy defect effectively enhancing interfacial thermal conductance is explained by interfacial modes of phonon density of states. The progress made so far could provide a special idea and guidance for improving heat dissipation for micro- and nano-devices.

Heat transfer characteristics of solid-liquid interface on nanostructure surface under external electric field

With the size of high-performance electronic device decreasing (down to nanoscale), and the accompanying heat dissipation becomes a big problem due to its extremely high heat generation density. To tackle the ever-demanding heat dissipation requirement, intensive work has been done to develop techniques for chip-level cooling. Among the techniques reported in the literature, liquid cooling appears to be a good candidate for cooling high-performance electronic devices. However, when the device size is reduced to the sub-micro or nanometer level, the thermal resistance on the solid-liquid interface cannot be ignored in the heat transfer process. Usually, the interfacial thermal transport can be enhanced by using nanostructures on the solid surface because of the confinement effect of the fluid molecules filling up the nano-grooves and the increase of the solid-liquid interfacial contact area. However, in the case of weak interfacial couplings, the fluid molecules cannot enter into the nano-grooves and the interfacial thermal transport is suppressed. In the present work, the heat transfer system between two parallel metal plates filled with deionized water is investigated by molecular dynamics simulation. Electronic charges are applied to the upper plate and lower plate to create a uniform electric field that is perpendicular to the surface, and three types of nanostructures with varying size are arranged on the lower plate. It is found that the wetting state at the solid-liquid interface can change from Cassie state into Wenzel state with strength of the electric field increasing. Owing to the transition from the dewetting state to wetting state (from Wenzel to Cassie wetting state), the Kapitza length can be degraded and the solid-liquid interfacial heat transfer can be enhanced. The mechanism of the enhancing hart transfer is discussed based on the calculation of the number density distribution of the water molecules between the two plates. When the charge is further increased, electrofreezing appears, and a solid hydrogen bonding network is formed in the system, resulting in the thermal conductivity increasing to 1.2 W/(m·K) while the thermal conductivity remains almost constant when the electric charge continues to increase.

Molecular dynamics study of interfacial thermal transport properties of graphene/GaN heterostructure

The performance of interfacial thermal transport in heterostructure determines the reliability of micro- and nano-scale device. In this study, a molecular dynamics method is used to investigate the interfacial thermal transport properties of graphene/GaN sandwich heterostructure. The effects of temperature, defect, and size on the interface thermal conductance at the heterostructure are analyzed. It is found that the interface thermal conductance increases with temperature rising; at 1100 K, the interface thermal conductance of the 3-layer graphene heterostructure is increased by 61%. This increase is mainly attributed to the enhanced lattice vibrations at higher temperature, which excites more out-of-plane phonons. The presence of minor vacancy defects in GaN leads interface thermal conductance to increase, reaching a maximum value of 0.0357 GW/(m<sup>2</sup>·K) at a defect rate of 20%. This enhancement is believed to be due to additional thermal transport pathways created by the defects. However, as the defect rate increases further, the interface thermal conductance begins to decrease, which is thought to be due to interfacial coupling strength decreasing. With the number of GaN layers increasing from 8 to 24, the interface thermal conductance decreases, the change is attributed to the decrease of the number of phonons participating in the thermal transport across the interface. Conversely, with the number of graphene layers increasing from 2 to 6, the interface thermal conductance initially increases and then decreases. This behavior is related to initial improvements of phonon matching and coupling strength, followed by the increase in phonon scattering and localization. The results of this study provide a theoretical basis for regulating the interfacial thermal transport in microelectronic devices.

Regulating interfacial thermal conductance with commensurate-incommensurate transitions at atomic-scale silicon/silicon interfaces.

Interfacial thermal conductance (ITC) between two contact surfaces is an important factor in accurately measuring energy transfer and heat dissipation at the interface; however, it is still not fully resolved how to more effectively modulate the ITC and unravel the related inner mechanisms. In this study, the contribution of commensurability and normal load to ITC at the atomic-scale silicon/silicon interface is disclosed. The results manifest that the ITC gradually reduces with the transition from commensurability to incommensurability. This is because the reduced force constant at the incommensurate interface decreases the transmittance of phonons, leading to the suppression of high-frequency phonon excitation and a red shift in the phonon spectrum, thereby weakening the ITC. We further discovered that increasing the normal loads can significantly enhance the ITC in both contact states, and the reason is that the interlayer distance decreases with increasing normal loads, which strengthens the interfacial potential and force constant, consequently resulting in greater heat transfer efficiency. This paper reveals that interfacial thermal transport can be regulated by applying normal loads and changing the interfacial contact states.

Interface thermal conductance and phonon thermal transport characteristics of diamond/carbon nanotube interface

<sec>Diamond, an ultra-wide band gap semiconductor material, is an ideal material for high-power, high-frequency, high-temperature, and low-power loss electronic devices. However, high-frequency and high-power working environment leads to ultra-high local hot spots. Thermal interface material (TIM) is urgently needed to improve interface heat dissipation. Carbon nanotube (CNT), a brand-new generation of TIM, has ultra-high thermal conductivity (6000 W/(m·K)) and is expected to solve the heat dissipation problem of diamond semiconductor.</sec><sec>Based on this, we first propose to combine diamond and CNT to improve the performance and stability of semiconductor device, reduce packaging size, and achieve miniaturized design of devices. Here we use reverse non-equilibrium molecular dynamics (RNEMD) method to study the thermal transport characteristics and interface thermal conductance (ITC) at the diamond/CNT interface. The results reveal that increasing CNT layers enhances the overall vibration density of states (VDOS) of CNT and shifts the peak value towards the low frequency band, which is more conducive to interface heat transfer. Alternatively, the enhancement of the phonon overlap energy strengthens the coupling vibration of phonon and thus improving the efficiency of the interfacial heat transfer. Moreover, in a certain range, the increase of system temperature and CNT length-to-diameter ratio can raise the cutoff frequency of the VDOS of diamond and CNT near the interface and the peak value of the low frequency band. This further improves the coupling vibration of phonon on both sides. Finally, by orthogonal test simulation, the optimal value of ITC is determined to be 2.65 GW/(m<sup>2</sup>·K) when the temperature, chirality, layers and length are 900 K, (6, 6), 6 layers and 5 nm respectively. This result greatly exceeds the current ITC of general semiconductors/metal. Compared with general composite materials, diamond/CNT composite material has great potential to enhance heat dissipation. Furthermore, according to P-value test, the number of layers has an extremely significant influence on interfacial thermal transport, while the influence of length, temperature and diameter decrease in turn.</sec><sec>This work provides insights into optimizing heat transport at diamond/carbon nanotube interface and will be beneficial for device thermal management and chip material design.</sec>

Mechanical regulation to interfacial thermal transport in GaN/diamond heterostructures for thermal switch.

Gallium nitride offers an ideal material platform for next-generation high-power electronics devices, which enable a spectrum of applications. The thermal management of the ever-growing power density has become a major bottleneck in the performance, reliability, and lifetime of the devices. GaN/diamond heterostructures are usually adopted to facilitate heat dissipation, given the extraordinary thermal conduction properties of diamonds. However, thermal transport is limited by the interfacial conductance at the material interface between GaN and diamond, which is associated with significant mechanical stress at the atomic level. In this work, we investigate the effect of mechanical strain perpendicular to the GaN/diamond interface on the interfacial thermal conductance of heterostructures using full-atom non-equilibrium molecular dynamics simulations. We found that the heterostructure exhibits severe mechanical stress at the interface in the absence of loading, which is due to lattice mismatch. Upon tensile/compressive loading, the interfacial stress is more pronounced, and the strain is not identical across the interface owing to the contrasting elastic moduli of GaN and diamond. In addition, the interfacial thermal conductance can be notably enhanced and suppressed by tensile and compressive strains, respectively, leading to a 400% variation in thermal conductance. More detailed analyses reveal that the change in interfacial thermal conductance is related to the surface roughness and interfacial bonding strength, as described by a generalized relationship. Moreover, phonon analyses suggest that the unequal mechanical deformation under compressive strain in GaN and diamond induces different frequency shifts in the phonon spectra, leading to an enhancement in phonon overlapping energy, which promotes phonon transport at the interface and elevates the thermal conductance and vice versa for tensile strain. The effect of strain on interface thermal conductance was investigated at various temperatures. Based on the mechanical tunability of thermal conductance, we propose a conceptual design for a mechanical thermal switch that regulates thermal conductance with excellent sensitivity and high responsiveness. This study offers a fundamental understanding of how mechanical strain can adjust interface thermal conductance in GaN/diamond heterostructures with respect to mechanical stress, deformation, and phonon properties. These results and findings lay the theoretical foundation for designing thermal management devices in a strain environment and shed light on developing intelligent thermal devices by leveraging the interplay between mechanics and thermal transport.

Microstructural Welding Engineering of Carbon Nanotube/Polydimethylsiloxane Nanocomposites with Improved Interfacial Thermal Transport

AbstractCarbon nanotube (CNT) reinforced polymer nanocomposites with high thermal conductivity show a promising prospect in thermal management of next‐generation electronic devices due to their excellent mechanical adaptability, outstanding processability, and superior flexibility. However, interfacial thermal resistance between individual CNT significantly hinders the further improvement in thermal conductivity of CNT‐reinforced nanocomposites. Herein, an interfacial welding strategy is reported to construct graphitic structure welded CNT (GS‐w‐CNT) networks. Notably, the obtained GS‐w‐CNT/polydimethylsiloxane (PDMS) nanocomposite with a GS loading of 4.75 wt% preserves a high thermal conductivity of 5.58 W m−1 K−1 with a 410% enhancement as compared to a pure CNT/PDMS nanocomposite. Molecular dynamics simulations are utilized to elucidate the effect of interfacial welding on the heat transfer behavior, revealing that the GS welding degree plays an important role in reducing both phonon scattering in the GS‐w‐CNT structure and interfacial thermal resistance at the interfaces between CNT. The unique welding strategy provides a new route to optimize the thermal transport performance in filler reinforced polymer nanocomposites, promoting their applications in next‐generation microelectronic devices.

Modulation of localized phonon thermal transport at GaN/AlxGa1-xN heterointerface: Polar surface, doping, and compressive Strain

The phonon transport processes within a few atomic layers near heterointerfaces play a crucial role in thermoelectric applications such as nitride-based high electron mobility transistors (HEMTs) and light-emitting diodes (LEDs). However, a systematic investigation of their localized transport characteristics remains unexplored. This article employs the Interfacial Phonons method based on first-principles calculations to extract interface phonon information for GaN/AlxGa1-xN heterostructures. Molecular dynamics simulations are utilized to compare the phonon behaviors between Ga-face and N-face GaN-based heterointerfaces. The research extensively investigates the dependence of interfacial thermal transport on the concentration of Al atoms under ordered substitutional doping and the strength of uniaxial compressive strain. The research revealed that both Ga-face and N-face GaN/AlxGa1-xN heterointerfaces exhibit phonon branch drift. The differences in charge distribution at the polar surfaces lead to varying degrees of Brillouin zone distortion. The vibrational modes of the atoms at the N-face GaN interface are more compact and localized than those of Ga-face GaN, resulting in a stronger degree of localization for the optical phonon branches. When varying the doping concentration of Al atoms, some phonon branches at the GaN interface appear outside the band structure of the intrinsic bulk and surface states, exhibiting strong localized characteristics. The introduction of Al atoms at the heterointerface induces additional phonon scattering, and the lattice vibration mismatch between Al and Ga atoms results in a non-uniform residual stress field at the interface, further enhancing phonon-interface scattering. Moderate compressive strain-induced lattice distortion promotes the overlapping of phonon modes at the interface, allowing some localized phonons to serve as interface transport modes. This optimization enhances phonon transport at the heterointerface. This research provides valuable insights into a comprehensive understanding of interfacial thermal transport in GaN-based semiconductors. Moreover, it offers useful theoretical guidance for thermal management through the manipulation of phonon wave properties.

Enhanced interfacial thermal conductance in functionalized boron nitride/polylactic acid nanocomposites: A molecular dynamics study

The relatively low thermal conductivity of biodegradable polylactic acid (PLA) has limited its applications in various fields. To address this issue, the incorporation of nanofillers, such as boron nitride nanosheets (BNNSs), has emerged as an effective method to enhance PLA's thermal properties. However, the thermal conduction of polymer-based nanocomposites is strongly influenced by interfacial thermal resistance. In this study, we investigate the impact of pristine and surface-treated BNNSs on the thermal behavior of PLA using molecular dynamics simulations. To enhance interfacial interactions and reduce chain mobility during heat transfer, we chemically modify the surface of BNNSs by introducing three different functional groups (NH2, OH, and COOH) with varying polarities. Our findings suggest that oxygen-containing groups, namely –OH and –COOH, exhibit stronger interfacial interactions compared to the other cases. We also systematically apply different percentages of these functional groups (i.e., 2.5, 5, and 7.5 %) and observe that a higher number of functional groups leads to a greater improvement in interfacial thermal transport, attributed to the enhanced phonon coupling effect. To complete the discussion, we thoroughly study the influence of random and agglomerated patterns of functional groups distribution.

Reducing interfacial thermal resistance between polyethylene oxide-based solid-state polymer electrolyte and lithium anode by using IVA group two-dimensional materials: A molecular dynamics study

Solid-state lithium-ion batteries, as a new generation of high energy density electrochemical energy storage devices, need to meet more stringent thermal management standards. In this work, the interfacial thermal transport phenomena between a polyethylene oxide based solid electrolyte and a lithium anode in solid-state lithium-ion batteries was investigated by using a non-equilibrium molecular dynamics simulation method. To reveal the internal heat transport mechanism of the batteries at the microscopic level and to enhance the heat dissipation in them, IVA group two-dimensional monolayer materials such as graphene, silicene, and germanene were inserted at the interface and the interfacial thermal resistances were calculated to compared with the pristine interface. It was found that interfacial interactions were enhanced and the lattice vibrations were coupled by inserting the monolayer materials. Also, compared to the pristine interface, the interfacial thermal resistance was reduced by 83.89 %, 76.05 % and 55.99 %, respectively. Thus, this work provides valuable insights into the thermal transport between electrodes and electrolytes in solid-state lithium-ion batteries, and provides methodological references for improving the heat dissipation and thermal management efficiency inside the batteries.

The effect of binding energy on optimizing the interfacial thermal transport in metal-MoS2-dielectric nanostructures

The development of MoS2-based devices presents a significant challenge due to the poor interfacial thermal transport of metal-MoS2-dielectric structures, which results in severe thermal dissipation issues. This work aims to investigate the effects of various strategies, including modifying metal electrodes, adjusting the number of MoS2 layers, and incorporating van der Waals heterostructures, on the enhancement of interface thermal conductance (ITC) of metal-MoS2-dielectric structures. The time-domain thermoreflectance method was applied to characterize the ITC and experimental results demonstrate that the effect of regulating metal electrodes depends on the binding energy between the metal-MoS2 interfaces, which is a matter of controversy due to the large dispersion of published results. Furthermore, the increase in the number of MoS2 layers does not necessarily lead to the enhancement of the ITC of metal-MoS2-dielectric structures, as this is a comprehensive reflection of the number of layers' influence on both thermal conductance of MoS2 itself and the ITC between MoS2 and the surrounding materials. The results from the heterostructures of hBN-MoS2 and Gr-MoS2 were then systematically compared, and the results indicate the potential of Gr-MoS2 heterostructures in augmenting ITC. In addition, the nonequilibrium molecular dynamics simulation was effectively employed to gain deeper insights into the effect of binding energy on optimizing the ITC of metal-heterostructures-dielectric nanostructures. Finally, the effectiveness of these strategies in enhancing thermal properties was discussed through an analysis of interfacial binding energy. This finding provides a valuable direction for enhancing the thermal management of MoS2-based devices.

Phonon non-equilibrium effects on interface thermal resistance between graphene and substrates

Accurate measurement and deep understanding of interfacial thermal transport through interfaces where two-dimensional (2D) materials are involved are crucial for efficient thermal management in nanodevices. However, there is still a large discrepancy in the measurement on the interfacial thermal resistance (ITR) at interfaces between 2D materials and substrates. In this study, two kinds of molecular dynamics techniques are utilized to investigate the ITR of graphene/silicon interfaces under steady-state and transient conditions. Our results indicate that, in both conditions, phonon non-equilibrium phenomena could lead to an overestimation of the interfacial thermal resistance. In the steady state, the overestimation of ITR arises from an exaggerated interfacial temperature difference when using specific vibrational modes as indicators of the sample temperature. In the transient regime, it is attributed to the extended thermal relaxation time of flexural acoustic modes in graphene caused by weak phonon coupling when recording the temperature evolution to extract the ITR. These findings provide a comprehensive understanding of thermal transport across the graphene/silicon interface, aiding in the optimization of graphene-based nanodevices. The study also underlines the necessity of considering the specific experimental setup and physical processes involved when interpreting ITR data obtained from measurements.

Thermal transport across TiO2-H2O interface involving water dissociation: Ab initio-assisted deep potential molecular dynamics.

Water dissociation on TiO2 surfaces has been known for decades and holds great potential in various applications, many of which require a proper understanding of thermal transport across the TiO2-H2O interface. Molecular dynamics (MD) simulations play an important role in characterizing complex systems' interfacial thermal transport properties. Nevertheless, due to the imprecision of empirical force field potentials, the interfacial thermal transport mechanism involving water dissociation remains to be determined. To cope with this, a deep potential (DP) model is formulated through the utilization of abinitio datasets. This model successfully simulates interfacial thermal transport accompanied by water dissociation on the TiO2 surfaces. The trained DP achieves a total energy accuracy of ∼238.8meV and a force accuracy of ∼197.05 meV/Å. The DPMD simulations show that water dissociation induces the formation of hydrogen bonding networks and molecular bridges. Structural modifications further affect interfacial thermal transport. The interfacial thermal conductance estimated by DP is ∼8.54 × 109 W/m2K, smaller than ∼13.17 × 109 W/m2K by empirical potentials. The vibrational density of states (VDOS) quantifies the differences between the DP model and empirical potentials. Notably, the VDOS disparity between the adsorbed hydrogen atoms and normal hydrogen atoms demonstrates the influence of water dissociation on heat transfer processes. This work aims to understand the effect of water dissociation on thermal transport at the TiO2-H2O interface. The findings will provide valuable guidance for the thermal management of photocatalytic devices.

Sustainable epoxy composites with high thermal conductivity using poly(lipoic acid) modified liquid metal as crosslinkers

With the increasing demand for electronics integration and the increasing accumulation of e-waste, thermal management materials combing high conductivity and sustainability is highly desired. Herein, bio-based recyclable epoxy composites with significantly improved thermal conductivity were prepared by utilizing poly(lipoic acid) modified liquid metal (LM) as the crosslinkers. The strong interactions between poly(lipoic acid) and LM enable the formation of a poly(lipoic acid) shell layer coating on the LM droplet core, which facilitates the dispersion of LM droplets as well as interfacial thermal transport in the composites. As a result, the composite with only 25 vol% LM exhibits a thermal conductivity of 0.82 W/(m·K), which is higher than those of the previous studies with randomly filled LM at the same loading. In addition, attributed to the existence of dual dynamic bonds (disulfide bonds and β-hydroxyl ester bonds), the composites are reprocessable and their thermal conductivities are maintained after reprocessing. Moreover, the composites can be degraded under mild reducing conditions. This work presents a novel approach for the preparation of high-performance thermal management materials featuring recyclability and degradability.

Implications of Interfacial Thermal Transport on the Self-Heating of GaN-on-SiC High Electron Mobility Transistors

Implications of Interfacial Thermal Transport on the Self-Heating of GaN-on-SiC High Electron Mobility Transistors

Boltzmann transport equation simulation of phonon transport across GaN/AlN interface

The miniaturization of devices makes interfacial resistance to heat dissipation more and more obvious. Therefore, it is important to study interfacial thermal transport systematically. A modified higher harmonic inelastic model is proposed to describe the inelastic scattering at the interface. Combined with this interface model, the thermal transport of interface structures is studied by the Boltzmann transport equation. The results show that the introduction of inelastic scattering enhances the heat flux contribution of low-frequency phonons, changes the phonon distribution near the interface, and enhances the phonon non-equilibrium. This demonstrates the importance of inelastic interfacial scattering in simulations. By analyzing the phonon distribution, it is found that temperature and thickness affect the interfacial heat transport through the redistribution of phonons. The redistribution has the opposite effect on the contribution of inelastic scattering. By studying ballistic phonons in the interface structure, it is found that the ballistic phonons are mainly concentrated in the low-frequency region. Due to the longer mean free path, the phonons with frequencies below 2.5 THz are more likely to maintain a ballistic transport state. Similar to nanoscale hotspots, strong quasi-ballistic transport hinders heat diffusion. The energy fraction of ballistic phonons increases by 49%, and the local effective thermal conductivity drops by 52%. This work studied the mechanism of interfacial thermal transport, and will be useful for future interface simulation.

Grafted Alkene Chains: Triggers for Defeating Contact Thermal Resistance in Composite Elastomers.

The pursuit of enhancing the heat transfer performance of composite elastomers as the thermal interface materials (TIMs) is a compelling and timely endeavor, given the formidable challenges posed by interfacial thermal transport in the domains of energy science, electronic technology, etc. Despite the efficacy of phase change materials (PCMs) in enhancing composite elastomers' interfacial compatibility, thereby reducing contact thermal resistance for heat transfer improvement, their leakage post-transition has impeded the widespread adoption of this approach. Herein, a strategy is proposed for developing a solid-solid phase change composite elastomer by grafting alkene chains onto the crosslink network to eliminate the possibility of leakage. A series characterization suggest that the resulting material possesses a self-adjusting interfacial compatibility feature to help reduce contact thermal resistance for heat transfer facilitating. The investigations on adhesion strength and surface energy reveal that the presence of amorphous grafted alkane chains at the interface facilitates easier absorption onto the contacting solid surface, enhancing intermolecular interactions at the interface to promote across-boundary heat transfer. By integrating these findings with the thermal performance evaluation of composite elastomers using a real test vehicle, valuable insights are gained for the design of composite elastomers, establishing their suitability as TIMs in relevant fields.

Effect of Twist Angle on Interfacial Thermal Transport in Two-Dimensional Bilayers.

Advances in two-dimensional (2D) devices require innovative approaches for manipulating transport properties. Analogous to the electrical and optical responses, it has been predicted that thermal transport across 2D materials can have a similar strong twist-angle dependence. Here, we report experimental evidence deviating from this understanding. In contrast to the large tunability in electrical transport, we measured an unexpected weak twist-angle dependence of interfacial thermal transport in MoS2 bilayers, which is consistent with theoretical calculations. More notably, we confirmed the existence of distinct regimes with weak and strong twist-angle dependencies for thermal transport, where, for example, a much stronger change with twist angles is expected for graphene bilayers. With atomic simulations, the distinct twist-angle effects on different 2D materials are explained by the suppression of long-wavelength phonons via the moiré superlattice. These findings elucidate the unique feature of 2D thermal transport and enable a new design space for engineering thermal devices.