Interfacial Oxide Layer Research Articles

Investigation of ferro-resistive switching mechanisms in TiN/Hf0.5Zr0.5O2/WOx/W ferroelectric tunnel junctions with the interface layer effect

This study presents an in-depth analysis of ferro-resistive switching (FRS) behaviors in a TiN/Hf0.5Zr0.5O2(HZO)/WOx/W ferroelectric tunnel junction (FTJ) device, with a particular focus on the role of the tungsten oxide (WOx) interface layer (IL). Structural examinations confirm the presence of the WOx IL, which significantly influences the FRS properties of the device. Electrical measurements indicate the devices exhibit stable and reproducible FRS characteristics with an ON/OFF ratio of 9.7, predominantly attributed to the tunneling electro-resistance (TER) effect driven by the ferroelectric polarization. Comprehensive numerical simulations, incorporating the nucleation-limited switching model and Simmons tunneling mechanism, provide detailed insights into how the WOx IL and the trapped charges at the HZO/WOx interface affect polarization switching mechanisms and the electronic potential barrier profile. These findings underscore the importance of interface effects in HfO2-based FTJs and advance the understanding of the TER mechanism in multilayer ferroelectric systems.

Enhanced Electro‐Resistance and Tunable Asymmetric Depolarization Behavior in Hf0.5Zr0.5O2 Ferroelectric Tunnel Junction by Bottom Oxide Interfacial Layer

AbstractElectro‐resistance (ER) plays a crucial role in the application of hafnia‐based ferroelectric tunnel junctions (FTJs), pivotal devices widely acknowledge for their potential in non‐volatile memory and neuromorphic networks. Leveraging atomic layer deposition (ALD) enhances the flexibility in fabricating bilayer FTJs by combining a ferroelectric layer with another oxide layer. Introducing additional layers is necessary to achieve a sufficient storage window for implementing intriguing functions, albeit at the risk of increased depolarization field strength. Hence, selecting a suitable inserted layer becomes paramount. In this study, a novel strategy to enhance the performance of Ge‐based Hf0.5Zr0.5O2 FTJs is presented by incorporating bottom interfacial layers (ILs) with distinct band energy characteristics. The optimized FTJs exhibit significantly improved endurance, lower coercive voltage, and enhanced retention properties. Notably, an intriguing asymmetric retention behavior driven by the imprint field (Eimp) is observed, which can be mitigated by integrating TiO2 ILs. Most importantly, an effective method to manipulate depolarization behavior in hafnia‐based devices through ILs is introduced, leading to enhanced non‐volatility and synaptic behavior in FTJs.

Dynamic behaviors of interfacial oxides and elements during the ultrasonic-assisted diffusion bonding of 6063Al alloys

Efficiently breaking the oxide layer and rapidly diffusing of elements at low-temperature has been a longstanding goal in the diffusion bonding (DB) of Al alloys. To break the interfacial oxide layers and accelerate atomic diffusion, ultrasound energy was introduced during the DB of 6063Al. A full Zn–Al eutectoid joint was manufactured via a pure Zn interlayer at 360 °C in atmospheric by an ultrasonic-assisted diffusion bonding (U-DB) at only an ultrasonic vibration of10 min. During U-DB, brittle cracks were formed in the interfacial oxide layers due to high strain rate induced by ultrasonic action. Zn diffused into Al alloy through the brittle cracks in oxide layers via “subcutaneous diffusion,” forming a Zn–Al eutectoid diffusion region between the Al alloy and oxide layer. The oxide fragments irregularly migrated to the center of the joint due to Kirkendall effect and ultrasonic action, finally dispersed in the bonded metal. The bonded metal finally transformed as a full Zn–Al eutectoid phase after consuming interlayer. The shear strength of the Zn–Al eutectoid joint reached 82.6 MPa. The Zn–Al mutual diffusion coefficient of U-DB at 360 °C was ∼0.6 μm2/s, which was about 20 times higher than the thermal diffusion coefficient under same temperature condition. Additionally, the mechanism of ultrasonic-assisted diffusion based on the strain-driven diffusion mode was discussed in detail.

Development and Characterization of N2O-Plasma Oxide Layers for High-Temperature p-Type Passivating Contacts in Silicon Solar Cells.

Full-area passivating contacts based on SiOx/poly-Si stacks are key for the new generation of industrial silicon solar cells substituting the passivated emitter and rear cell (PERC) technology. Demonstrating a potential efficiency increase of 1 to 2% compared to PERC, the utilization of n-type wafers with an n-type contact at the back and a p-type diffused boron emitter has become the industry standard in 2024. In this work, variations of this technology are explored, considering p-type passivating contacts on p-type Si wafers formed via a rapid thermal processing (RTP) step. These contacts could be useful in conjunction with n-type contacts for realizing solar cells with passivating contacts on both sides. Here, a particular focus is set on investigating the influence of the applied thermal treatment on the interfacial silicon oxide (SiOx) layer. Thin SiOx layers formed via ultraviolet (UV)-O3 exposure are compared with layers obtained through a plasma treatment with nitrous oxide (N2O). This process is performed in the same plasma enhanced chemical vapor deposition (PECVD) chamber used to grow the Si-based passivating layer, resulting in a streamlined process flow. For both oxide types, the influence of the RTP thermal budget on passivation quality and contact resistivity is investigated. Whereas the UV-O3 oxide shows a pronounced degradation when using high thermal budget annealing (T > 860 °C), the N2O-plasma oxide exhibits instead an excellent passivation quality under these conditions. Simultaneously, the contact resistivity achieved with the N2O-plasma oxide layer is comparable to that yielded by UV-O3-grown oxides. To unravel the mechanisms behind the improved performance obtained with the N2O-plasma oxide at high thermal budget, characterization by high-resolution (scanning) transmission electron microscopy (HR-(S)TEM), X-ray reflectometry (XRR) and X-ray photoelectron spectroscopy (XPS) is conducted on layer stacks featuring both N2O and UV-O3 oxides after RTP. A breakup of the UV-O3 oxide at high thermal budget is observed, whereas the N2O oxide is found to maintain its structural integrity along the interface. Furthermore, chemical analysis reveals that the N2O oxide is richer in oxygen and contains a higher amount of nitrogen compared to the UV-O3 oxide. These distinguishing characteristics can be directly linked to the enhanced stability exhibited by the N2O oxide under higher annealing temperatures and extended dwell times.

Tunnel oxide passivating contact enabled by polysilicon on ultra-thin SiO2 for advanced silicon radiation detectors

Conventional silicon junction detectors encounter significant carrier recombination within the heavily doped p+ and n+ layers, as well as beneath the metal contact regions, creating the so-called “dead layers”, especially on the detector side. In this study, we present the tunnel oxide passivating contact with doped polysilicon on oxide, which demonstrates exceptional surface passivation and carrier selectivity. The key innovation lies in an ultra-thin (~ 1.5 nm) interfacial oxide layer that facilitates efficient majority carrier transportation via tunneling while effectively block minority carriers. Remarkably low saturation current densities, ranging from 5 to 10 fA/cm2 even with the metal contact, underscore the superiority of both n-type and p-type tunnel oxide passivating contacts. In contrast, conventional p–n junction or high-low junction exhibit saturation current densities ranging from 10 to 90 fA/cm2 in the studied p+ and n+ layers with surface passivation schemes due to Auger recombination and surface recombination, and 1000–6000 fA/cm2 with metal contacts due to intense metal-induced recombination at the interface. These findings indicate the potential and superiority of implementing n-type tunnel oxide passivating contact on the detector side and p-type contact on the back side for advanced silicon radiation detectors. This approach would enable thorough collection of generated charge carriers along the track of incident ionizing radiation particles, leading to improved energy resolution and reduced noise levels.

Improvement of the Ferroelectric Response of La-Doped Hafnium Zirconium Oxide Employing Tungsten Oxide Interfacial Layer with Back-End-of-Line Compatibility.

In this work, the impact of a tungsten oxide (WO3) seed and capping layer for ferroelectric La-doped (Hf, Zr)O2 (La:HZO) based capacitors, designed with back-end-of-line (BEOL) compatibility, is systematically investigated. The WO3 capping layer supplies oxygen to the La:HZO layer throughout the fabrication process and during device cycling. This facilitates the annihilation of oxygen vacancies (Vo) within the La:HZO layer, thereby stabilizing its ferroelectric orthorhombic phase and resulting in an increase of the remanent polarization (Pr) value in the capacitor. Moreover, the effectiveness of the WO3 capping layer depends on the seed layer of the HZO film, suggesting that proper combination of the seed and capping layers should be employed to maximize the ferroelectric response. Finally, a TiN/TiO2 seed layer/La:HZO/WO3 capping layer/TiN capacitor is successfully fabricated and optimized by a complete set of atomic layer deposition (ALD) processes, achieving a superior 2Pr value and endurance value of more than 109 cycles at an electric field of 2.5 MV/cm. The WO3 capping layer is anticipated to offer a viable solution for doped HZO capacitors with reduced thickness, addressing the challenge of elevated Vo levels that favor the tetragonal phase and result in low 2Pr values.

Substrate dilution and interface structures of tungsten coating deposited by double-glow plasma surface alloying on stainless steel substrate

W-coating layers with varying thicknesses up to 10 μm were deposited by double-glow plasma surface alloying (DGPSA) on finely polished stainless steel (SS304L) substrates to investigate the influence of the substrate on both the W-coating and interface structures. The examination revealed substrate dilution and the presence of oxide crystallites, predominantly FeWO4 and WO2, at the interface between W and SS304L. These observations correlated with the occurrence of cracking and peeling-off of the W-coating. Both Cr and Ni showed decreased distribution in the interface layer compared to their distribution in the W-coating and SS304L substrate. In comparison, Fe demonstrated a more noticeable compositional gradient, decreasing monotonically from SS304L across the interface to the W-coating. The depth distribution of O indicated that its inclusions were influenced not only by DGPSA deposition but also by post-deposition ion-beam milling. Additionally, the presence of spherical particles directly on the substrate's surface provided evidence for surface alloying reactions, while the columnar grains within the interface oxide layer were associated with the texture features of the W-coating, as confirmed by X-ray diffraction and pole-figure measurements. These findings offer valuable insights into the surface alloying process facilitated by DGPSA and its potential for developing W-coatings tailored for plasma-facing applications.

Microstructure and properties of oxide-reinforced FeCrAl matrix alloy manufactured by selective laser melting

In this work, nano-Y2O3 dispersed FeCrAl powders (NYD-Fe) were used to produce oxide dispersion strengthened (ODS) alloy by selective laser melting (SLM), and their microstructures and properties were investigated in detail by the kinds of characterization techniques. The results indicate that the Y2O3 particles adhered to the surface of FeCrAl powder absorb more laser, thus increasing the laser energy demand. High quality ODS deposits can be obtained at 600 mm/s and 180 W parameters. The ODS samples deposited by SLM exhibit coarse columnar grains with [001] texture. The Ti-rich nanoparticles and core-shell structured nanoparticles (Y- and O-rich core surrounded by a Ti-rich shell) are observed in ODS alloys. The precipitation formation of core-shell structured nanoparticles involves ball milling amorphization and dissolution reprecipitation. The ODS-180 alloy exhibits a higher ductility compared to FeCrAl-180 alloy, which is caused by the cellular structure with high density dislocations and the nano-sized precipitates inhibit the dislocation motion. The wear rate of the ODS-180 alloy is 51% lower than that of FeCrAl-180 alloy, which is mainly ascribed to the hardness and interface oxide layer resulting from its specific microstructural features.

Heterogeneously integrated InGaP/Si waveguides for nonlinear photonics

The heterogeneous integration of III-V semiconductors with the Silicon platform enables the merging of photon sources with Silicon electronics while allowing the use of Silicon mature processing techniques. However, the inherent sufficient quality of III-Vs’ native oxides made imperative the use of deposited interfacial oxide layers or adhesives to permit the bonding. Here we present a novel approach enabling the heterogeneous integration of structured III-V semiconductors on silicates via molecular bonding at 150 °C, much below the CMOS degradation temperature, is presented. The transfer of 235 nm thick and 2 mm long InGaP waveguides with widths of 4.65, 2.6 and 1.22 μm on 4 μm thick Si thermal oxide, with optional SX AR-N 8200.18 cladding, has been experimentally verified. Post-processing of the 1.20 and 0.60 μm input/output tappers has allowed the implementation of double-inverse tapers. The minimal processing requirements and the compatibility with transferring non-cladded structures of the presented technique are demonstrated. The quality of the transferred waveguides bonding interface and their viability for non-linear optics applications has been tested by means of the surface contribution to the optical non-linearity via modal phase-matched second-harmonic generation.

Effect of microstructure and micromechanics on wear/wear-corrosion mechanism of laser-repaired Ni-WC coating

Repairing drilling tools with laser cladding technology becomes a meaningful way to reduce costs and increase efficiency. The relationship between the wear/wear corrosion mechanism and micromechanics of laser-repaired Ni-WC coating was investigated. It is found that the received Ni-WC coating is mainly composed of γ-Ni, WC, W2C, and a small amount of CrC and MoC. In dry environment, the surface fatigue crack gradually propagates and develops along the surface as the load increases, forming a peeling phenomenon on the surface. Conversely, the water film was formed as lubrication to reducing the formation of peeling in wet environment. It is found that the wear and damage of the laser-repaired Ni-WC coating in wet environment is lower than that in dry environment. The effect of water film and water cooling on wear of the laser-repaired Ni-WC coating is higher than that of corrosion. In addition, a thin oxide interfacial layer is found under dry sliding at the boundary of WC particle with the maximum width of about 3 μm, leading to low microhardness (H) / elastic modulus (E) of the oxide interfacial layer, which weakens the wear resistance of WC particles in laser-repaired Ni-WC coating.

Double-sided semitransparent titania photoelectrode with enhanced light harvesting

In this work, unique semitransparent electrodes were prepared by the anodization of titanium layers (540 nm thick) initially deposited on the both sides of glass substrates employing indium-tin oxide interface layers serving as a current collector for the induced photocurrent. The anodization strategy used in this study enables fabrication of semitransparent titanium dioxide nanotube arrays with either aligned or spaced architecture on the two sides of the planar substrate. This study aims to perform a detailed investigation of this novel photoelectrode system (crystal structure, morphology and optical properties) to reveal their photoelectrochemical features. It was found that the photoelectrode exhibits enhanced photocurrent density about 1.9 times higher (4.6 μAcm−2 at +0.5 V) for aligned nanotubes compared to a substrate overgrown symmetrically by separated nanotubes (2.4 μAcm−2 at +0.5 V). This can be effectively explained by the higher tube density in the case of aligned nanostructures, which provide more channels for charge percolation. In addition, both the high donor concentration (6.4 × 1020 cm−3) together with the low charge transfer resistance of the semitransparent electrode of the aligned nanotubes make the material promising for application in photoelectrochemical systems and smart light management.

Harnessing Van der Waals CrPS4 and Surface Oxides for Nonmonotonic Preset Field Induced Exchange Bias in Fe3GeTe2.

Two-dimensional van der Waals (vdW) heterostructures are an attractive platform for studying exchange bias due to their defect-free and atomically flat interfaces. Chromium thiophosphate (CrPS4), an antiferromagnetic material, possesses uncompensated magnetic spins in a single layer, rendering it a promising candidate for exploring exchange bias phenomena. Recent findings have highlighted that naturally oxidized vdW ferromagnetic Fe3GeTe2 exhibits exchange bias, attributed to the antiferromagnetic coupling of its ultrathin surface oxide layer (O-FGT) with the underlying unoxidized Fe3GeTe2. Anomalous Hall measurements are employed to scrutinize the exchange bias within the CrPS4/(O-FGT)/Fe3GeTe2 heterostructure. This analysis takes into account the contributions from both the perfectly uncompensated interfacial CrPS4 layer and the interfacial oxide layer. Intriguingly, a distinct and nonmonotonic exchange bias trend is observed as a function of temperature below 140 K. The occurrence of exchange bias induced by a "preset field" implies that the prevailing phase in the polycrystalline surface oxide is ferrimagnetic Fe3O4. Moreover, the exchange bias induced by the ferrimagnetic Fe3O4 is significantly modulated by the presence of the van der Waals antiferromagnetic CrPS4 layer, forming a heterostructure, along with additional iron oxide phases within the oxide layer. These findings underscore the intricate and complex nature of exchange bias in van der Waals heterostructures, highlighting their potential for tailored manipulation and control.

Uncovering the mechanism of the LME susceptibility for the galvanized and electrogalvanized DP 1180 steels

Zn-based coatings generally protect dual-phase (DP) 1180 advanced high-strength steel in automobiles from corrosion. However, liquid metal embrittlement (LME) tends to occur in Zn-coated DP 1180 steel during resistance spot welding. In this study, the LME phenomena of the galvanized (GI) and electrogalvanized (EG) DP 1180 steels were compared based on the LME susceptibility evaluation standard. For DP 1180 steel coated with GI, the maximum length of the LME crack was approximately 121.2 μm at the shoulder of the welding spot. In contrast, for the specimen coated with EG, the maximum length of the LME crack was 792.6 μm at the center of the welding spot. Owing to the different galvanizing processes, the microstructure differed during annealing, thereby influencing the occurrence of the LME. Furthermore, the microstructural observations indicated that the protection of the interfacial oxide layer in the GI specimen could prevent the formation of the LME to some extent. Therefore, the presence of the interfacial oxide layer could account for the different LME susceptibilities of the GI and EG DP 1180 steels.

SEM Electron-Beam-Induced Ultrathin Carbon Deposition Layer on Cu Substrate: Improved Dry Oxidation Protection Performance than CVD Single Layer Graphene.

An amorphous carbon deposition layer (CDL) with nanoscale thickness induced by scanning electron microscope (SEM) electron beam is studied as a carbon-based protective layer on copper (Cu). CDL is prepared by inducing the deposition of pollutants or hydrocarbons in the cavity of SEM through electron beam irradiation (EBI). Wrinkles and cracks will not form and the interfacial spacing of CDL/Cu is smaller than Graphene/Cu (Gr/Cu). The thickness and coverage of the interfacial oxide layer of CDL/Cu are all smaller than that of the Gr/Cu after the same oxidation conditions. Characterization of Raman mapping also demonstrates that CDL shows better oxidation inhibition effects than graphene. The structure of CDL is determined to be C = C and C = O, CH3- and C-O can be loaded vertically on CDL. Density functional theory (DFT) is employed for demonstrating the smaller interfacial gap of CDL/Cu, less wrinkles and cracks and larger adsorbing energy of water/oxygen compared with Gr/Cu. Molecular dynamic (MD) simulation also indicates that the diffusion of water or oxygen into CDL/Cu is more difficult and the oxidation of Cu covered by CDL is well suppressed. This work provides a new approach for the study of carbon-based antioxidant materials on Cu.

Current status and challenges for hole-selective poly-silicon based passivating contacts

Doped polysilicon (poly-Si) passivating contacts have emerged as a key technology for the next generation of silicon solar cells in mass production, owing to their excellent performance and high compatibility with the existing passivated emitter and rear cell technology. However, the current solar cell architecture based on a rear-side electron-selective (n+) poly-Si contact is also approaching its practical limit (∼26%) in mass production. The full potential of doped poly-Si passivating contacts can only be realized through incorporation of both electron-selective and hole-selective (p+) poly-Si contacts. While studies of both p+ and n+ poly-Si contacts commenced simultaneously, significant performance differences have arisen. Phosphorus-doped poly-Si contacts consistently outperform boron-doped counterparts, displaying typically lower recombination current density (J0) values (1–5fA/cm2 vs 7–15fA/cm2). This discrepancy can be attributed to inadequate optimization of p+ poly-Si contacts and fundamental limitations related to boron doping. The poorer passivation of p+ poly-Si contacts can be at least partly attributed to boron segregation into the interfacial oxide layers, compromising the interfacial oxide integrity and reducing the chemical passivation effectiveness. This review critically examines the progress of p+ poly-Si contacts characterized by cell efficiency and J0 values, delves into existing challenges, identifies potential solutions, and explores some potential solar cell architectures to enhance efficiency by incorporating p+ poly-Si contacts.

Tribocorrosion and Mechanical Properties of Nanotubes Grown on Ti–35Nb Alloy by Anodization

Abstract In this study, we evaluated the tribocorrosion and mechanical properties of nanotubes grown on a Ti–35Nb alloy. The nanotube arrays, approximately 2.0 µm thick, were formed through controlled anodization and annealing, composed of Ti and Nb oxides. The compact oxide film at the nanotube/substrate interface provided corrosion resistance, lubricating properties in worn tracks, and improved wear resistance. The nanotubes exhibited a lower coefficient of friction, hardness, and elastic modulus compared to untreated Ti–35Nb. The crystalline structure of the nanotubes and the oxide interface layer enhanced adhesion, preventing plastic deformation and improving tribocorrosion resistance.

Design and implementation of an efficient hybrid system for electricity production

The interfacial layer in a Schottky barrier solar cell plays an important role in determining the short circuit current, open circuit voltage, fill factor and efficiency of the cell. In this paper, we studied the effects of interfacial oxide layer thickness, interface state density and Ф0 (the level above the valence band to which surface states are filled in isolated semiconductor) on the open circuit voltage and efficiency of the SnO2/SiO2/Si (N) solar cells. From our analysis, we have found that the efficiency of the cell increases at first with the interfacial oxide layer thickness δ, and after acquiring a maximum value falls with a further increase of δ. We have optimized the interfacial layer thickness for maximum efficiency. The solar cell current–voltage characteristics under illumination are also computed for different values of insulator thickness δ. The results obtained by numerical simulation using Matlab programs are presented and discussed. The SnO2/SiO2/Si (N) solar cells, in which the interfacial oxide layer thickness is optimized to 21 A°, have an average open circuit voltage of 0.62 V and a short circuit current of 36 mA/cm². The calculated conversion efficiency of the cells can be as high as 17.5 %.

The influence of crack and interface oxidation on dwell fatigue crack propagation behavior of the nickel-base superalloy ATI A718Plus

The crack propagation properties are an important and often limiting factor for the commercial application of superalloys in aerospace applications where the oxidation ahead of the crack tip plays an important role. Previous research on the Ni-base superalloy A718Plus revealed that the orientation and the volume fraction of the high temperature grain boundary phases δ and η have a major influence on the dwell fatigue crack propagation rate at 650 °C in ambient air but not in vacuum. In this work, the effect of internal oxidation at the η/δ–matrix interface and its effect on dwell fatigue crack propagation and mechanical properties are examined by advanced microscopic methods and micro-cantilever testing. During crack propagation, the crack tip is exposed to air where a Nb-rich oxide layer forms and embrittles the η/δ–matrix interface causing the cracks to deflect and propagate along the oxidized interfaces. Micro-cantilever tests on the oxidized interface show that these oxide layers also significantly reduce the local strength and fracture toughness of the material. This proves that interfacial oxide layers are the underlying reason for the reduction of the dwell fatigue crack growth resistance at 650 °C, particularly in microstructures whose η/δ–matrix interfaces are oriented parallel to the crack growth direction.Graphical

Refractive index and thickness analysis of planar interfaces by prism coupling technique

Since 2022, various foundries are offering the manufacture of integrated photonic structures for the visible spectrum. As this technology continues to enter the market, there will be an increasing demand for accurate optical and dimensional characterization of these structures. To meet this demand, we have developed a highly precise optical characterization system based on the prism coupling technique, also known as m-lines spectroscopy, to investigate the optical properties of hydrogenated amorphous silicon nitride planar waveguides deposited by plasma-enhanced chemical vapor deposition. In this work, by combining visible spectroscopy with the prism coupling technique to excite modes that propagate resonantly in the waveguide via frustrated total internal reflection, using either parallel or perpendicularly polarized light beams, we were able to analyze the waveguide properties of silicon nitride thin films with an interfacial oxide layer. Furthermore, through numerical simulation of the bilayer structure, we calculate the waveguide’s refractive index and thickness, and determine the characteristics of the interfaces in terms of refractive index and thickness.

Diffusion bonding of RAFM steels: Evolution of interfacial oxide layer with pressure and microstructure and mechanical property after post bonding heat treatment

The effect of increasing the bonding pressure from 10 to 20 MPa (5 MPa interval) at 1050?C for 60 minutes on the diffusion bonded joint of reduced activation ferritic/martensitic (RAFM) steel was investigated. The results indicate that the quality of the bond improves accordingly with increasing bonding pressure. The oxide layer at the bonding interface underwent an evolution process from continuous to discontinuous and ultimately disappeared with the increase of bonding pressure. The optimal joint was achieved in this work at the pressure of 20 MPa. Considering the research of reliability of joints in engineering applications, the optimum joint was subjected to post-bonding heat treatment (PBHT) of 750?C for 90 minutes. The diffusion bonded sample subjected to PBHT exibits microstructural features and tensile properties similar to those of the base metal. It is noteworthy that the tensile fracture does not occur at the bonding interface, but in the base metal far away from the interface. This work can provide a feasible method for the removal of oxides at the diffusion bonding interface of RAFM steel and also contribute to the establishment and optimization of diffusion bonding processes, thereby improving the quality of the diffusion bonding joint.