Interfacial Misfit Research Articles

Thermodynamics driving the strong metal–support interaction: Titanate encapsulation of supported Pd nanocrystals

The strong metal--support interaction (SMSI) is the encapsulation of a supported metal particle by an oxide layer that diffuses from the substrate. This process is usually described as being driven by a reduction in the surface energy of the metal particle and has a significant influence on the catalytic activity of the metal. Here, epitaxial Pd nanocrystals grown in ultrahigh vacuum on $\mathrm{SrTi}{\mathrm{O}}_{3}(001)$ and anatase $\mathrm{Ti}{\mathrm{O}}_{2}(001)$ substrates are studied by scanning tunneling microscopy. At annealing temperatures above \ensuremath{\sim}600 \textordmasculine{}C, the Pd crystals can become encapsulated by a $\mathrm{Ti}{\mathrm{O}}_{x}$ monolayer originating from the substrates. For both bare and encapsulated Pd crystals, their height-to-width ratio increases with the crystal height as a mechanism to partially release their interfacial misfit strain with the substrate. However, the rate of this increase is lower for encapsulated crystals, indicating that during the SMSI process the interface between the particle and the oxide is modified to form a lower energy interfacial structure which also results in less strain in the encapsulated particle. The SMSI is found to preferentially occur on larger crystals, driven by the reduction in their elastic strain energy, which scales with the crystal volume. Compared with the traditional view of SMSI our results provide a more complete description of the encapsulation process.

The Isostructural Substitution‐Induced Growth Mechanism of Rutile TiO2 Electron Transport Layer and the Dominant Distribution for Efficient Carbon‐Based Perovskite Solar Cells

Rutile TiO2 (R‐TiO2) produced by chemical bath deposition (CBD) is widely considered as the desired electron transport layer (ETL) for perovskite solar cells (PSCs). However, the understanding of the growth mechanism of R‐TiO2 ETL and its general regular pattern affecting power conversion efficiency (PCE) is underappreciated. Herein, the growth mechanism of TiO2 on fluorine‐doped SnO2 substrate (FTO) is demonstrated and it is revealed that pure R‐TiO2, rather than a rutile/anatase mixed crystal, is formed under an Sn–Ti isostructural substitution effect. The similarity of lattice parameters and phase structure between FTO and R‐TiO2 can reduce interface misfit and nucleation barrier, thus boosting heterogeneous nucleation and growth of R‐TiO2 simultaneously. Based on the key growth conditions of the R‐TiO2 ETL, the dominant distribution of PCE for hole transport layer (HTL)‐free carbon‐based planar perovskite solar cells is illustrated and discussed, and a champion efficiency of 14.0% is achieved.

Interaction between the edge dislocation dipole pair and interfacial misfit dislocation network in Ni-based single crystal superalloys

Understanding the intrinsic strengthening mechanism is of great significance for microstructural design of Ni-based single crystal superalloys. In this paper, from an atomistic perspective, the interacting mechanism between edge dislocation dipole pair and interfacial misfit dislocation network has been elaborated. It is shown that a network of interfacial misfit dislocations can effectively impede the movement of matrix dislocations, accommodate and pile up the edge dislocation dipole pairs in Ni matrix. Furthermore, we have systematically elucidated the influence of loading rates on the stimulating period of edge dislocation dipole pairs and stiffness of Ni/Ni3Al substrate. These findings provide a better understanding of the interfacial strengthening mechanism of Ni-based single crystal superalloys.

Interface structures and dislocation nucleation of Cu/graphene interface via molecular dynamic simulations

Molecular dynamic simulations have been performed to investigate the effects of Cu {111}/graphene interface structures on the initial dislocation nucleation behavior in Cu/graphene layered composites. The characteristics of interfacial structures, including four possible types of stacking structures, interfacial misfit dislocations and interfacial energy distribution, have been studied based on geometrical analysis Thompson tetrahedron, disregistry analysis, and excess potential energy. In addition, interfacial structures are transformed by rotating the graphene layer with various angles, which further changing the morphology of the interface. After relaxation, the equilibrium state of the interface consists of a hexagon unit region arranging in periodicity, which also depicts the periodic energy distribution both on the Cu and graphene side. Under uniaxial X and Y directions loading, the evolution of interface patterns provides a non-Schmid factor for initial interfacial dislocation nucleation which prefers to locate the sites of higher potential energy area. Moreover, the rotation of the graphene layer changes the interfacial structures by changing the atoms mismatch on the Cu/graphene interface, which consequently influences the nucleation conditions including sites, morphology and slip system as well. This work provides an understanding of the Cu/graphene interface-dominated dislocation nucleation.

Optical and structural investigation of a 10 μm InAs/GaSb type-II superlattice on GaAs

We report on a 10 μm InAs/GaSb type-II superlattice (T2SL) grown by molecular beam epitaxy on a GaAs substrate using an interfacial misfit (IMF) array and investigate the optical and structural properties in comparison with a T2SL grown on a GaSb substrate. The reference T2SL on GaSb is of high structural quality as evidenced in the high-resolution x-ray diffraction (HRXRD) measurement. The full width at half maximum (FWHM) of the HRXRD peak of the T2SL on GaAs is 5 times larger than that on GaSb. The long-wave infrared (LWIR) emission spectra were analyzed, and the observed transitions were in good agreement with the calculated emission energies. The photoluminescence (PL) intensity maxima (Imax) of ∼10 μm at 77 K is significantly reduced by a factor of 8.5 on the GaAs substrate. The peak fitting analysis of the PL profile indicates the formation of sub-monolayer features at the interfaces. PL mapping highlights the non-uniformity of the T2SL on GaAs which corroborates with Nomarski imaging, suggesting an increase in defect density.

A novel tetragonal precipitate with multiple orientations in Mg–La alloy: An atomic scale investigation using HAADF–STEM

During the process of precipitation in aged magnesium rare earth (Mg–RE) alloys, the subsequent structural transformation of the β″ precipitate is still controversial. In this study, the sequential precipitates of the β″ were investigated in Mg–3.0 wt% La binary alloys by atomic resolution high-angle annular dark-field scanning transmission electron microscopy (HAADF–STEM). Distinguished from the β′, the β″ precipitate in Mg–La alloy is transformed preferentially into a La-rich FCC structure with the two crystallographic orientations to α-Mg matrix, and then evolved into a hitherto unreported tetragonal phase. It is confirmed that the crystal structure of tetragonal precipitate has a symmetry of space group I4/mmm and lattice parameters of a = 0.426 nm and c = 1.080 nm. Meanwhile, there exist three categories of orientation relationships (Type-І, Type-П and Type-Ш) between the tetragonal precipitate and α-Mg matrix in the microstructure. Based on it, the tetragonal precipitate exhibits three typical precipitation morphologies, which are elucidated reasonably according to the interfacial misfit degree. The aim of this study is to provide some efficient subsequent precipitation strengthening phases of β″ precipitate.

TiN/γ-Fe interface orientation relationship and formation mechanism of TiN precipitates in Mn18Cr2 steel

A Mn18Cr2 steel containing TiN precipitates was fabricated by vacuum induction melting. The morphology of TiN precipitates and the interface orientation relationship between TiN and γ-Fe were characterized by means of SEM, TEM and SAED, and the formation mechanism of TiN precipitates in Mn18Cr2 steel was clarified. Results show that the TiN precipitates are more likely to exhibit a cubic-shaped morphology and form both within the grain and at the grain boundary of γ-Fe. The interface orientation relationship between TiN and γ-Fe is determined as follows: \({(100)_{{\rm{TiN}}}}//{(1\bar 11)_{{\rm{\gamma}} - {\rm{Fe}}}},\,\,{[0\bar 11]_{{\rm{TiN}}}}//{[\bar 112]_{{\rm{\gamma}} - {\rm{Fe}}}}\). Because of the smallest interfacial misfit, the secondary close-packed lane {100} of TiN preferentially combines with the close-packed plane {111} of γ-Fe during the precipitation in order to minimize the interface energy. After nucleation, the TiN precipitates exhibit cubic appearance due to the fact that the TiN has a FCC structure with rock salt type structure. This study provides reference for the material design of the austenitic high-manganese steels with excellent yield strength.

Numerical investigation on threading dislocation bending with InAs/GaAs quantum dots* *Project supported by the National Natural Science Foundation of China (Grant Nos. 61874148, 61974141, and 61674020), the Beijing Natural Science Foundation, China (Grant No. 4192043), the National Key Research and Development Program of China (Grant No. 2018YFB2200104), the Fund from the Beijing Municipal Science & Technology Commission, China (Grant No.

The threading dislocations (TDs) in GaAs/Si epitaxial layers due to the lattice mismatch seriously degrade the performance of the lasers grown on silicon. The insertion of InAs quantum dots (QDs) acting as dislocation filters is a pretty good alternative to solving this problem. In this paper, a finite element method (FEM) is proposed to calculate the critical condition for InAs/GaAs QDs bending TDs into interfacial misfit dislocations (MDs). Making a comparison of elastic strain energy between the two isolated systems, a reasonable result is obtained. The effect of the cap layer thickness and the base width of QDs on TD bending are studied, and the results show that the bending area ratio of single QD (the bending area divided by the area of the QD base) is evidently affected by the two factors. Moreover, we present a method to evaluate the bending capability of single-layer QDs and multi-layer QDs. For the QD with 24-nm base width and 5-nm cap layer thickness, taking the QD density of 1011 cm−2 into account, the bending area ratio of single-layer QDs (the area of bending TD divided by the area of QD layer) is about 38.71%. With inserting five-layer InAs QDs, the TD density decreases by 91.35%. The results offer the guidelines for designing the QD dislocation filters and provide an important step towards realizing the photonic integration circuits on silicon.

Interface Structures and Dislocation Nucleation of Cu/graphene Incoherent Interface Via Molecular Dynamic Simulations

Molecular dynamic simulations have been performed to investigate the effects of Cu {111}/graphene interface structures on the initial dislocation nucleation behavior in Cu/graphene layered composites. The characteristics of interfacial structures, including four possible types of stacking structures, interfacial misfit dislocations and interfacial energy distribution, have been studied based on geometrical analysis Thompson tetrahedron, disregistry analysis and excess potential energy. In addition, interfacial structures are transformed by rotating the graphene layer with various angles, which further changing the morphology of the interface. After relaxation, the equilibrium state of the interface consists of a hexagon unit region arranging in periodicity, which also depicts the periodic energy distribution both on the Cu and graphene side. Under uniaxial X and Y directions loading, the evolution of interface patterns provides a non-Schmid factor for initial interfacial dislocation nucleation which prefer to locate the sites of higher potential energy area. Moreover, the rotation of graphene layer changes the interfacial structures by changing the atoms mismatch on the Cu/graphene interface, which consequently influences the nucleation conditions including sites, morphology and slip system as well. This work provides an understanding on the Cu/graphene interface-dominated dislocation nucleation.

Lattice dislocation induced misfit dislocation evolution in semi-coherent {111} bimetal interfaces

The study of dislocation plasticity mediated by semi-coherent interfaces can aid in the design of certain heterostructured materials, such as nanolaminates. The evolution of interface misfit patterns under complex stress fields arising from dislocation pileups can influence local dislocation/interface interactions, including effects of multiple incoming dislocations. This work utilizes the Concurrent Atomistic-Continuum modeling framework to probe the evolution of misfit structures at semi-coherent Ni/Cu and Cu/Ag interfaces impinged by dislocation pileups generated via nanoindentation. A continuum microrotation metric is computed at various stages of the indentation process and used to visualize the evolution of the interface misfit dislocation pattern. The stress state from approaching dislocations induces mixed contraction and expansion of misfit dislocation structures at the interface. A lower number of misfit nodes per unit interface area coincides with greater localized deformation with regard to atoms near misfit nodes for Ni/Cu. The decreased misfit node spacing for Cu/Ag alternatively distributes the restructuring associated with plastic deformation over a larger percentage of atoms at the interface. Interface sliding facilitated by misfit dislocation motion is found to facilitate deformation extending into the bulk lattices centered on misfit nodes. The depth of penetration of those fields is found to be greater for Ni/Cu than for Cu/Ag. The study of dislocation plasticity mediated by semi-coherent interfaces can aid in the design of certain heterostructured materials, such as nanolaminates. The evolution of interface misfit patterns under complex stress fields arising from dislocation pileups can influence local dislocation/interface interactions, including effects of multiple incoming dislocations. This work utilizes the Concurrent Atomistic-Continuum modeling framework to probe the evolution of misfit structures at semi-coherent Ni/Cu and Cu/Ag interfaces impinged by dislocation pileups generated via nanoindentation. A continuum microrotation metric is computed at various stages of the indentation process and used to visualize the evolution of the interface misfit dislocation pattern. The stress state from approaching dislocations induces mixed contraction and expansion of misfit dislocation structures at the interface. A lower number of misfit nodes per unit interface area coincides with greater localized deformation with regard to atoms near misfit nodes for Ni/Cu. The decreased misfit node spacing for Cu/Ag alternatively distributes the restructuring associated with plastic deformation over a larger percentage of atoms at the interface. Interface sliding facilitated by misfit dislocation motion is found to facilitate deformation extending into the bulk lattices centered on misfit nodes. The depth of penetration of those fields is found to be greater for Ni/Cu than for Cu/Ag.

Growth of InAs0.32Sb0.68 on GaAs using a thin GaInSb buffer and strain superlattice layers

We report on the growth of an InAs0.32Sb0.68 layer on (001) GaAs substrates. The lattice mismatch strain between the InAs0.32Sb0.68 layer and the GaAs substrate was accommodated using a thin 50–100 nm Ga0.35In0.65Sb buffer with interfacial misfit (IMF) dislocations. The epitaxial structures were characterized using transmission electron microscopy and x-ray diffraction analysis. The threading dislocation density in the InAs0.32Sb0.68 layer was reduced successfully to ∼1 × 108 cm−2 using the combination of a Ga0.35In0.65Sb IMF buffer and InSb/Ga0.35In0.65Sb superlattice layers. Compared to GaSb/GaAs and InSb/GaAs interfaces, a significantly higher threading dislocation density (>1011 cm−2) was observed at the Ga0.35In0.65Sb/GaAs interface. Detailed analysis suggests that high threading dislocation density in the Ga0.35In0.65Sb IMF buffer could be due to the non-uniform microscopic distribution of indium and gallium atoms. This work is beneficial to the scientific community in the growth of the InAs0.32Sb0.68 material as it provides a novel approach to prepare a platform for the growth of the InAs0.32Sb0.68 material, which does not have a suitable lattice-matched substrate, on the widely available GaAs substrate.

A comparative study on heterogeneous nucleation and mechanical properties of the fcc-Al/L12-Al3M (M = Sc, Ti, V, Y, Zr, Nb) interface from first-principles calculations.

In this work, we report a comparative study of the interfacial properties of fcc-Al/L12-Al3M (M = Sc, Ti, V, Y, Zr, Nb) from first-principles calculations. It is found that the fcc-Al(111)/L12-Al3Nb(111) interface is energetically favorable because of its negative interfacial energy (-0.225 J m-2), whereas the interfacial energies of the other five interfaces are positive. Despite their thermodynamically unfavorable characteristics, the stabilities of the formed interfaces are ranked in the order fcc-Al(111)/L12-Al3Nb(111) > fcc-Al(111)/L12-Al3Ti(111) > fcc-Al(111)/L12-Al3Zr(111) > fcc-Al(111)/L12-Al3Sc(111) > fcc-Al(111)/L12-Al3V(111) > fcc-Al(111)/L12-Al3Y(111). Moreover, the computed generalized stacking fault energy curves revealed that the (111)[11-2] slip system is preferred over the (111)[10-1] slip system under external stresses for all six interfaces. Based on the Rice ratio criterion, the interface slips also energetically favor the generation of stacking faults instead of cleavage for these interface systems; this finding implied that these interfaces did not greatly influence the plastic deformation behavior of aluminum. Furthermore, the derived bulk elastic properties indicate that fcc-Al, L12-Al3Nb, and L12-Al3V tend to present ductile behavior, while L12-Al3Zr, L12-Al3Ti, L12-Al3Y, and L12-Al3Sc are found to be brittle compounds. Nevertheless, all of these intermetallics can strengthen the aluminum matrix without losing much plasticity to provide a higher elastic modulus than aluminum along with the ductile interface nature of fcc-Al(111)/L12-A13M(111).

A transmission electron microscopy study of dislocation propagation and filtering in highly mismatched GaSb/GaAs heteroepitaxy

Monolithic integration of lattice-mismatched semiconductor materials opens up access to a wide range of bandgaps and new device functionalities. However, it is inevitably accompanied by defect formation. A thorough analysis of how these defects propagate and interact with interfaces is critical to understanding their effects on device parameters. Here, we present a comprehensive study of dislocation networks in the GaSb/GaAs heteroepitaxial system using transmission electron microscopy (TEM). Specifically, the sample analyzed is a GaSb film grown on GaAs using dislocation–reduction strategies such as interfacial misfit array formation and introduction of a dislocation filtering layer. Using various TEM techniques, it is shown that such an analysis can reveal important information on the dislocation behavior including filtering mechanism, types of dislocation reactions, and other interactions with interfaces. A novel method that enables plan-view imaging of deeply embedded interfaces using TEM and a demonstration of independent imaging of different dislocation types are also presented. While clearly effective in characterizing dislocation behavior in GaSb/GaAs, we believe that the methods outlined in this article can be extended to study other heteroepitaxial material systems.

On the Study of Dislocation Density in MBE GaSb-Based Structures

The results of the study on threading dislocation density (TDD) in homo- and heteroepitaxial GaSb-based structures (metamorphic layers, material grown by applying interfacial misfit array (IMF) and complex structures) deposited using molecular beam epitaxy are presented. Three measurement techniques were considered: high-resolution x-ray diffraction (HRXRD), etch pit density (EPD), and counting tapers on images obtained using atomic force microscopy (AFM). Additionally, high-resolution transmission electron microscopy (HRTEM) was used for selected samples. The density of dislocations determined using these methods varied, e.g., for IMF-GaSb/GaAs sample, were 6.5 × 108 cm−2, 2.2 × 106 cm−2, and 4.1 × 107 cm−2 obtained using the HRXRD, EPD, and AFM techniques, respectively. Thus, the value of TDD should be provided together with information about the measurement method. Nevertheless, the absolute value of TDD is not as essential as the credibility of the technique used for optimizing material growth. By testing material groups with known parameters, we established which techniques can be used for examining the dislocation density in GaSb-based structures.

Influence of Abutment Fabrication Method on 3D Fit at the Implant-Abutment Connection.

To three-dimensionally evaluate the internal fit at the implant-abutment interface of abutments fabricated with different workflows using a combination of the silicone replica technique and microcomputed tomography (μCT). Thirty abutments were fabricated to restore internal-connection implants and were divided into three groups according to fabrication method: (1) full digital (abutment machined using CAD/CAM system); (2) Ti-Base (prefabricated standard Ti-Base abutments); and (3) UCLA (UCLA-type abutments) (n = 10/group). Linear and volume measurements were performed to assess the internal misfit using a silicone replica of the implant-abutment interface misfit area, which was three-dimensionally reconstructed after μCT. The internal discrepancies in three different regions of interest (Gapsuperior, Gapmarginal, and Gapcenter) were assessed. Data were statistically evaluated using ANOVA and Tukey test (P < .05). Ti-Base and UCLA abutments presented significantly lower misfit volume (0.49 mm3, 95% CI: ± 0.045 mm3 and 0.48 mm3, 95% CI: ± 0.045 mm3, respectively) and mean internal gap (25.20 μm, 95% CI: ± 3.14 μm and 27.97 μm, 95% CI: ± 3.14 μm, respectively) than the full digital group (0.70 mm3, 95% CI: ± 0.045 mm3; 34.90 μm, 95% CI: ± 3.14 μm) (P < .001), but did not differ from each other (P = .825). While Gapcenter was significantly higher in the full digital group (P < .001), Gapsuperior and Gapmarginal did not demonstrate significant differences among groups. All regions were statistically similar within groups, except for Gapcenter in the full digital group, which exhibited higher mean values compared to the other regions (P = .000). The 3D measurements for quantification of internal discrepancy were strongly associated with the 2D measurements. Ti-Base and UCLA abutments exhibited better internal fit at the implant-abutment interfaces compared to a fully digitalized workflow (CAD/CAM custom abutments).

New insight into prismatic-type face-centered cubic zirconium phase in pure zirconium

Distinctive thermal-induced prismatic-type face-centered cubic zirconium phases (named γ phase) were firstly reported in pure zirconium. Atomic insight was provided into the α/γ interface and structure of interfacial misfit dislocations. Furthermore, we proposed the formation mechanism of this γ phase. Our results revealed that the semi-coherent interface contributes to periodic extra half-plane on the γ side and the volume expansion is 19.8% due to the α → γ phase transformation. More importantly, the α → γ phase transformation involved expansion and shuffle displacement.

Rotational and translational domains of beta precipitate in aged binary Mg−Ce alloys

The structural evolution from β1 (Mg3Ce) to β (Mg12Ce) precipitates, which takes place at the over-aged stage of binary Mg−Ce alloys, are investigated by high-angle annular dark-field scanning transmission electron microscopy. The structural transformation mainly occurs in the {111}β1 crystallographic planes, where the newly formed β lattices exhibit two categories of domain structures, namely rotational and translational domains. The rotational domain is composed of three β domains (βRA, βRB and βRC), which are related by a 120° rotation with respect to each other around the 〈111〉β1 axis of their β1 parent phase. The {111}β1 crystallographic planes can provide four sets of sublattices with the same orientation for an initial nucleation of β lattice. It leads to the formation of four translational β domains (βTA, βTB, βTC and βTD), among which any two differ by a vector of 1/6〈112〉β1. We deduce theoretically that there exist twenty-four β domains during this transition. However, considering the interfacial misfit, only one-third of domains can grow up and eventually forms β ribbon. Furthermore, a majority of β ribbons overlap partially β1 plate, which is beneficial to relax interfacial strain among β, β1 and α-Mg matrix (α/β/β1). The configuration of multiple β domains can effectively regulate interfacial misfit of α/β and β/β1, which are responsible for enhancing the hardness and strength of Mg−Ce alloy. Additionally, this study aims to provide some clues to improve the over-aged performance of magnesium alloys by constructing β domains and optimizing the α/β/β1 interface.

Ultra high hole mobility in Ge films grown directly on Si (1 0 0) through interface modulation

We have demonstrated an effective method to achieve ultra high mobility in the Ge films grown directly on Si (100) using molecular beam epitaxy (MBE). The Hall effect measurements revealed that the unintentionally doped Ge films have a hole mobility up to 1252 cm2/V·s at room temperature and 3855 cm2/V·s at 80 K. A proper combination of low temperature epitaxy and high temperature post annealing provides the opportunity on defect reduction and interface modulation. The periodic 90° interfacial misfit (IMF) array formed at the Ge/Si interface is believed to contribute to a preferential strain relieve at the interface and the ultra high mobility.

Analysis of preliminary local hardening close to the ferrite–martensite interface in dual-phase steel by a combination of finite element simulation and nanoindentation test

This study investigated the local preliminary hardening of ferrite near ferrite–martensite interfaces in dual-phase (DP) steel. Geometrically necessary dislocations (GNDs), generated in the case of interfacial misfit between different phases, may cause preliminary hardening around such interfaces. Firstly, finite-element simulations of nanoindentations were conducted using an ideal cylindrical DP model without preliminary hardening around the ferrite–martensite interface. The simulations indicated gradually decreasing nano-hardness with increasing distance from the ferrite–martensite interface. Second, nano-hardness measurements of ferrite near the ferrite–martensite interface were performed for laboratory-made DP steel containing 10 vol.% martensite. The measurements were consistent with the simulation without preliminary hardening around the interface. That is, interfacial preliminary hardening of ferrite was not indicated by our measurements. The GND density, which has been reported to cause preliminary hardening around the interface, supported this result. The density on ferrite was increased around the interface, but the area was very small compared with the nanoindentation size. We conclude that another hardening mechanism, e.g., GND accumulation under a high strain gradient around the interface, acts as a microstructural local strengthening factor in DP steel deformation.

Vertically Aligned Single-Crystalline CoFe2O4 Nanobrush Architectures with High Magnetization and Tailored Magnetic Anisotropy.

Micrometer-tall vertically aligned single-crystalline CoFe2O4 nanobrush architectures with extraordinarily large aspect ratio have been achieved by the precise control of a kinetic and thermodynamic non-equilibrium pulsed laser epitaxy process. Direct observations by scanning transmission electron microscopy reveal that the nanobrush crystal is mostly defect-free by nature, and epitaxially connected to the substrate through a continuous 2D interface layer. In contrast, periodic dislocations and lattice defects such as anti-phase boundaries and twin boundaries are frequently observed in the 2D interface layer, suggesting that interface misfit strain relaxation under a non-equilibrium growth condition plays a critical role in the self-assembly of such artificial architectures. Magnetic property measurements have found that the nanobrushes exhibit a saturation magnetization value of 6.16 μB/f.u., which is much higher than the bulk value. The discovery not only enables insights into an effective route for fabricating unconventional high-quality nanostructures, but also demonstrates a novel magnetic architecture with potential applications in nanomagnetic devices.