Abstract
Rutile TiO2 (R‐TiO2) produced by chemical bath deposition (CBD) is widely considered as the desired electron transport layer (ETL) for perovskite solar cells (PSCs). However, the understanding of the growth mechanism of R‐TiO2 ETL and its general regular pattern affecting power conversion efficiency (PCE) is underappreciated. Herein, the growth mechanism of TiO2 on fluorine‐doped SnO2 substrate (FTO) is demonstrated and it is revealed that pure R‐TiO2, rather than a rutile/anatase mixed crystal, is formed under an Sn–Ti isostructural substitution effect. The similarity of lattice parameters and phase structure between FTO and R‐TiO2 can reduce interface misfit and nucleation barrier, thus boosting heterogeneous nucleation and growth of R‐TiO2 simultaneously. Based on the key growth conditions of the R‐TiO2 ETL, the dominant distribution of PCE for hole transport layer (HTL)‐free carbon‐based planar perovskite solar cells is illustrated and discussed, and a champion efficiency of 14.0% is achieved.
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